Vishay General Semiconductor - Diodes Division SMBJ110AHE3_A/H
- Part No.:
- SMBJ110AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ110AHE3_A/H.pdf
- Description:
- TVS DIODE 110VWM 177VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ110AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 110 V stand-off voltage (VWM), 122–135 V breakdown voltage (VBR) at 1 mA, 177 V maximum clamping voltage (VC) at 3.4 A peak pulse current (IPPM), and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in industrial motor drives, telecom power supplies, and automotive ECUs.
For engineers reviewing the SMBJ110AHE3_A/H datasheet, SMBJ110AHE3_A/H pinout, SMBJ110AHE3_A/H application, or SMBJ110AHE3_A/H equivalent, key selection criteria include clamping performance under 3.4 A surge, unidirectional polarity with cathode band marking, AEC-Q101 qualification status, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VBR (122–135 V), it avalanches to divert transient energy away from downstream circuitry. Its low incremental surge resistance and fast response time (<1 ns) ensure effective suppression of ESD, lightning-induced surges, and inductive switching spikes.
The device is rated for 150 °C maximum junction temperature, exhibits 0.107 %/°C temperature coefficient of VBR, and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. Its unidirectional configuration requires correct cathode orientation during PCB layout to avoid forward conduction during normal operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 110 V - maximum continuous reverse operating voltage before clamping initiates |
| VBR (min/max) | 122 V / 135 V at 1 mA - guaranteed avalanche onset range defining protection threshold |
| VC @ IPPM | 177 V at 3.4 A - clamped voltage seen by protected circuit during full-rated 600 W transient |
| PPPM | 600 W - peak pulse power handling with 10/1000 µs waveform, enabling IEC 61000-4-5 Level 4 compliance |
| ID @ VWM | 1.0 µA - ultra-low leakage ensures minimal standby power loss in high-impedance circuits |
| RθJA | 100 °C/W - thermal resistance dictates derating above 25 °C ambient; limits sustained power dissipation |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002. Cathode identified by a single band at one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / reverse voltage reference node | Connected to lower-potential side (e.g., GND or return path); defines polarity for unidirectional operation |
| Cathode | Avalanche conduction terminal / clamping output | Marked with band; connected to protected line (e.g., 110 V rail); conducts surge current to anode during overvoltage |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power | Enables protection against severe transients like ISO 7637-2 Pulse 5a (load dump) in 12 V/24 V automotive systems |
| AEC-Q101 qualified | Validated for automotive under-hood environments including 1000-hour HTOL, -55 °C to +150 °C cycling, and ESD ≥ 8 kV HBM |
| Low clamping ratio (VC/VBR ≈ 1.41) | Minimizes stress on downstream MOSFETs or ICs during clamping - critical for 150 V-rated components |
| MSL Level 1 moisture sensitivity | Allows unlimited floor life and standard reflow without baking, reducing manufacturing overhead |
| Glass passivated junction | Ensures stable VBR over lifetime and immunity to humidity-induced parameter drift in industrial enclosures |
Applications
| Industrial Motor Drives | Telecom Power Supplies |
|---|---|
|
Use Scenario: Protection of IGBT gate drivers and DC bus sensing circuits against switching-induced voltage spikes. IC Role / Device Role / Timing Role: Shunt TVS placed across gate-source or bus-to-ground to clamp transients below MOSFET/IGBT breakdown limits. Use Value: Prevents false triggering or catastrophic failure during 100–500 V/µs dV/dt events common in PWM inverters. |
Use Scenario: Input-stage surge suppression on 48 V telecom rectifier outputs exposed to lightning-induced surges. IC Role / Device Role / Timing Role: Primary clamping device on secondary-side DC output, upstream of POL converters and monitoring ICs. Use Value: Limits transient overshoot to ≤177 V, preserving 200 V-rated electrolytic capacitors and PMICs. |
| Automotive Body Control Modules | Industrial PLC I/O Modules |
|
Use Scenario: CAN FD transceiver power rail protection in BCMs subjected to load dump per ISO 16750-2. IC Role / Device Role / Timing Role: Unidirectional TVS on 5 V or 12 V supply feeding CAN PHY, triggered only during overvoltage. Use Value: Survives 35 V/100 ms load dump pulses while maintaining <1 µA leakage to avoid battery drain. |
Use Scenario: Analog input protection on 0–10 V sensor interfaces in factory automation PLCs. IC Role / Device Role / Timing Role: Low-capacitance shunt protector on signal line referenced to system ground, minimizing signal distortion. Use Value: Clamps ESD events (IEC 61000-4-2 ±8 kV contact) without affecting 12-bit ADC accuracy due to stable VBR. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110AHM3_A/H | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification | No functional difference; selected where halogen-free materials are mandated by OEM environmental policy | Direct material substitution when halogen-free compliance is required; same footprint and thermal behavior |
| SMCJ110AHE3_A/H | Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package with 1500 W PPPM rating | Higher power handling enables use in higher-energy surge environments (e.g., outdoor telecom cabinets) | Choose when 600 W is insufficient and board space allows SMC footprint; not drop-in due to larger pad layout |
Compared with SMBJ110AHE3_A/H, SMBJ110AHM3_A/H offers identical protection performance with halogen-free construction, while SMCJ110AHE3_A/H provides 2.5× higher surge power at the cost of increased PCB area and thermal mass.
Availability
SMBJ110AHE3_A/H is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive body control modules requiring stable component supply with AEC-Q101 assurance and SMT manufacturability.
Supply support for SMBJ110AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability and application-specific validation.
The SMBJ series targets high-reliability transient suppression in automotive, industrial, and telecom infrastructure, engineered for robustness under repetitive surge stress and extended temperature operation.
FAQ
What is the clamping voltage of SMBJ110AHE3_A/H at its rated peak pulse current?
The SMBJ110AHE3_A/H has a maximum clamping voltage (VC) of 177 V at its rated peak pulse current (IPPM) of 3.4 A, measured using the standard 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during a full 600 W transient event, ensuring downstream components rated for ≥200 V remain within safe operating limits. The SMBJ110AHE3_A/H maintains this clamping performance across its qualified temperature range.
Is SMBJ110AHE3_A/H suitable for automotive applications?
Yes, SMBJ110AHE3_A/H is AEC-Q101 qualified, meaning it has passed rigorous stress tests including high-temperature operating life, temperature cycling, and ESD per JESD22-A114. It is explicitly designated for automotive use via the "HE3" suffix and is deployed in body control modules, infotainment power rails, and ADAS sensor interfaces where 110 V standoff and 177 V clamping meet ISO 16750-2 load dump requirements. The SMBJ110AHE3_A/H meets MSL Level 1 for lead-free reflow compatibility.
How does the unidirectional configuration of SMBJ110AHE3_A/H affect circuit design?
The SMBJ110AHE3_A/H is unidirectional, meaning it conducts only in reverse bias above VBR and behaves as a high-impedance open circuit under forward bias. Its cathode must be oriented toward the protected line (e.g., 110 V rail), with anode tied to reference potential (e.g., ground). This prevents unintended conduction during normal operation and ensures precise clamping action only during overvoltage events. Incorrect polarity would render the SMBJ110AHE3_A/H ineffective for surge suppression.
What is the thermal resistance and how does it impact SMBJ110AHE3_A/H layout?
The SMBJ110AHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on minimum recommended 0.2" × 0.2" copper pads per terminal. This value dictates derating: at 75 °C ambient, its usable power drops to ~2.5 W. To maintain reliability, PCB layout must provide adequate copper area and avoid thermal isolation; doubling pad size reduces RθJA by ~20 %. The SMBJ110AHE3_A/H's RθJL of 20 °C/W supports efficient heat transfer to PCB traces.
Does SMBJ110AHE3_A/H have any special handling or packaging requirements?
SMBJ110AHE3_A/H is rated MSL Level 1 per J-STD-020, meaning it has unlimited floor life and withstands standard lead-free reflow profiles (peak 260 °C) without pre-baking. It ships in 7" tape-and-reel (750 units/reel) with code "H", and its matte tin-plated leads comply with J-STD-002 for solderability. No special ESD handling beyond standard static-safe practices is required, as the SMBJ110AHE3_A/H is not ESD-sensitive in its packaged form.
SMBJ110AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 122V
- Voltage - Clamping (Max) @ Ipp:
- 177V
- Current - Peak Pulse (10/1000µs):
- 3.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ110AHE3_A/H FAQ
1.How can I place an order for SMBJ110AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ110AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ110AHE3_A/H reliable?
The price and inventory of SMBJ110AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ110AHE3_A/H is usually 5 days.
3.What payment methods are accepted for SMBJ110AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ110AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ110AHE3_A/H?
SMBJ110AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ110AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ110AHE3_A/H?
For technical support, including SMBJ110AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ110AHE3_A/H requirements.
6.How does Aetrix verify that SMBJ110AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All SMBJ110AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ110AHE3_A/H meets industry standards.
7.What is the process for return or replacement of SMBJ110AHE3_A/H?
All SMBJ110AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ110AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ110AHE3_A/H part is unused and in its original packaging.
Return procedure for SMBJ110AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ110AHE3_A/H Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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