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Vishay General Semiconductor - Diodes Division SMBJ110AHM3_A/H
- Part No.:
- SMBJ110AHM3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ110AHM3_A/H.pdf
- Description:
- TVS DIODE 110VWM 177VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,045
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Product details
Overview
SMBJ110AHM3_A/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 110 V stand-off voltage (VWM), 177 V maximum clamping voltage (VC) at 3.4 A peak pulse current (IPPM), 600 W peak pulse power (10/1000 µs), and operates across -55 °C to +150 °C junction temperature range - used for protecting MOSFETs, ICs, and sensor interfaces in industrial power supplies.
For engineers reviewing the SMBJ110AHM3_A/H datasheet, SMBJ110AHM3_A/H pinout, SMBJ110AHM3_A/H application, or SMBJ110AHM3_A/H equivalent, key selection criteria include clamping performance under 10/1000 µs surge, unidirectional polarity with cathode band marking, thermal resistance (RθJA = 100 °C/W), AEC-Q101 qualification status, and halogen-free RoHS compliance per HM3 suffix.
Technical Context
This TVS diode operates as a voltage-clamping protection device triggered by reverse-biased avalanche breakdown above its stand-off voltage. Its glass-passivated junction ensures stable breakdown characteristics and low leakage (<1.0 µA at VWM), while the SMB package supports automated placement and meets MSL Level 1 reflow requirements (peak 260 °C).
The device delivers 600 W peak pulse power handling with 10/1000 µs waveform, exhibits 0.107 %/°C temperature coefficient of VBR, and maintains clamping voltage ≤177 V at IPPM = 3.4 A - enabling robust transient suppression in DC power rails and low-speed signal paths without forward conduction during normal operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 110 V - Maximum continuous reverse operating voltage before clamping begins; defines safe working margin for 12 V–48 V DC systems. |
| VBR min/max | 122 V / 135 V at 1 mA - Verified breakdown threshold ensures predictable turn-on behavior under ESD or lightning-induced surges. |
| VC @ IPPM | 177 V at 3.4 A - Clamping voltage limits downstream component stress during 600 W transient events. |
| PPPM | 600 W (10/1000 µs) - Sustains high-energy transients common in motor drives and relay switching circuits. |
| IFSM | 100 A (8.3 ms half-sine) - Withstands repetitive inrush or fault currents without degradation. |
| TJ max | +150 °C - Enables use in under-hood automotive and high-temperature industrial environments. |
| RθJA | 100 °C/W - Requires minimum 0.2" × 0.2" copper pad per terminal for thermal management in PCB layout. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, matte tin-plated leads. Cathode identified by molded band on case.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse surge return path | Connected to system ground or low-side reference; completes clamping loop during transient events. |
| Cathode | Avalanche breakdown node / High-side clamp connection | Connected to protected line (e.g., 110 V rail); initiates conduction when voltage exceeds VWM. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables protection against IEC 61000-4-5 Level 4 surges (4 kV/2 Ω) on 110 V lines without derating. |
| 177 V clamping voltage at 3.4 A | Limits voltage overshoot to <1.6× VWM, preserving margin for 150 V-rated downstream components. |
| AEC-Q101 qualified (HM3 suffix) | Validated for automotive power electronics including body control modules and ADAS sensor power rails. |
| MSL Level 1, 260 °C peak reflow | Supports standard lead-free SMT assembly without moisture sensitivity concerns or baking requirements. |
| Low incremental surge resistance | Minimizes VC rise under high di/dt events, improving clamping consistency across surge repetition. |
Applications
| Industrial Motor Drives | Automotive Body Control Modules |
|---|---|
|
Use Scenario: Suppresses inductive kickback from 24 V solenoid valves and relay coils in PLC I/O modules. IC Role / Device Role / Timing Role: Unidirectional TVS placed between 24 V supply rail and ground to clamp transients up to ±1 kV. Use Value: Prevents latch-up or gate oxide damage in driver ICs by limiting rail voltage to ≤177 V during 600 W surges. |
Use Scenario: Protects LIN bus transceivers and microcontroller GPIOs from load dump and jump-start events. IC Role / Device Role / Timing Role: Standoff-rated TVS on 12 V input rail upstream of LDO regulators in BCM power distribution. Use Value: Maintains functional safety integrity by ensuring clamping occurs within 1 ns, faster than MCU reset timeout windows. |
| Telecom Power Rectification | Consumer Appliance SMPS Inputs |
|
Use Scenario: Shields bridge rectifier outputs and PFC controller inputs from AC line surges in base station PSUs. IC Role / Device Role / Timing Role: Secondary-side TVS on 110 V DC bus after rectification, coordinated with primary MOVs. Use Value: Reduces need for oversized bulk capacitors by absorbing residual energy not handled by front-end filtering. |
Use Scenario: Guards AC-DC adapter primary-side snubber circuits and optocoupler feedback paths in washing machine controllers. IC Role / Device Role / Timing Role: Unidirectional clamp on isolated 12 V bias rail feeding MCU and display drivers. Use Value: Eliminates field returns due to ESD-induced brownout resets by maintaining regulated rail stability during 8 kV contact discharge. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110AHE3_A/H | RoHS-compliant but not halogen-free; same electrical specs and AEC-Q101 qualification. | Preferred for commercial-grade industrial designs where halogen content is unrestricted. | Select when cost optimization is prioritized over halogen-free compliance without sacrificing automotive qualification. |
| SMCJ110A-HM3 | Same VWM/VC but in larger SMC (DO-214AB) package; higher IPPM (6.2 A) and PPPM (1500 W). | Suitable for higher-energy surge environments (e.g., outdoor telecom cabinets) requiring >600 W margin. | Choose when board space allows larger footprint and system-level surge testing exceeds IEC 61000-4-5 Level 4. |
Compared with SMBJ110AHM3_A/H, SMBJ110AHE3_A/H offers identical protection performance at lower material cost, while SMCJ110A-HM3 trades compact SMB size for 2.5× higher pulse power - making the original optimal for space-constrained AEC-Q101 designs needing exact 600 W capability.
Availability
SMBJ110AHM3_A/H is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, telecom power rectification, and consumer appliance SMPS inputs requiring stable component supply and halogen-free compliance.
Supply support for SMBJ110AHM3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and automotive-grade validation.
The SMBJ series is engineered for high-reliability transient suppression in harsh environments, targeting automotive, industrial, and telecom applications where consistent clamping and long-term stability are critical.
FAQ
What is the clamping voltage of SMBJ110AHM3_A/H at its rated peak pulse current?
The SMBJ110AHM3_A/H has a maximum clamping voltage (VC) of 177 V at its specified peak pulse current (IPPM) of 3.4 A using the 10/1000 µs waveform. This value is measured under standardized test conditions with 0.2" × 0.2" copper pads and confirms the device's ability to limit transient overvoltage to a predictable level during surge events. The SMBJ110AHM3_A/H maintains this clamping performance across its full operating temperature range.
Is SMBJ110AHM3_A/H qualified for automotive applications?
Yes, SMBJ110AHM3_A/H is AEC-Q101 qualified, as indicated by the "HM3" suffix denoting halogen-free, RoHS-compliant, and automotive-grade construction. It is validated for use in body control modules, lighting systems, and power distribution units where reliability under thermal cycling, vibration, and extended temperature operation (-55 °C to +150 °C) is required. The SMBJ110AHM3_A/H meets all stress tests defined in the AEC-Q101 standard for discrete semiconductors.
How does the SMBJ110AHM3_A/H differ from bidirectional TVS diodes like SMBJ110CA?
The SMBJ110AHM3_A/H is unidirectional and features a cathode band marking, intended for DC line protection where polarity is fixed. In contrast, SMBJ110CA is bidirectional with no polarity marking and symmetric clamping in both directions - suited for AC signal lines or differential buses. The SMBJ110AHM3_A/H provides lower leakage (<1.0 µA at VWM) and higher surge current rating in the forward direction, while SMBJ110CA exhibits matched VBR in both polarities but higher reverse leakage.
What is the thermal resistance of SMBJ110AHM3_A/H, and how does it affect PCB layout?
The SMBJ110AHM3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on minimum recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value requires adequate copper area and thermal vias for sustained power dissipation; exceeding 5.0 W continuous power without additional heatsinking risks junction temperature exceeding 150 °C. Proper layout directly impacts the SMBJ110AHM3_A/H's ability to survive repetitive surge events.
Can SMBJ110AHM3_A/H be used in place of SMBJ100A or SMBJ120A?
No - SMBJ110AHM3_A/H is not a direct substitute for SMBJ100A (VWM = 100 V) or SMBJ120A (VWM = 120 V), as each part is optimized for distinct standoff voltage windows. Using SMBJ110AHM3_A/H where VWM = 100 V is required may cause premature clamping during normal operation; conversely, substituting SMBJ100A in a 110 V system risks failure during nominal voltage excursions. The SMBJ110AHM3_A/H must be selected based on precise system VWM and VBR matching.
SMBJ110AHM3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 122V
- Voltage - Clamping (Max) @ Ipp:
- 177V
- Current - Peak Pulse (10/1000µs):
- 3.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ110AHM3_A/H FAQ
1.How can I place an order for SMBJ110AHM3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ110AHM3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ110AHM3_A/H reliable?
The price and inventory of SMBJ110AHM3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ110AHM3_A/H is usually 5 days.
3.What payment methods are accepted for SMBJ110AHM3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ110AHM3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ110AHM3_A/H?
SMBJ110AHM3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ110AHM3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ110AHM3_A/H?
For technical support, including SMBJ110AHM3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ110AHM3_A/H requirements.
6.How does Aetrix verify that SMBJ110AHM3_A/H is sourced from the original manufacturer or authorized distributors?
All SMBJ110AHM3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ110AHM3_A/H meets industry standards.
7.What is the process for return or replacement of SMBJ110AHM3_A/H?
All SMBJ110AHM3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ110AHM3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ110AHM3_A/H part is unused and in its original packaging.
Return procedure for SMBJ110AHM3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ110AHM3_A/H Tags
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DESD3V3E1BL-7B
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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