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Vishay General Semiconductor - Diodes Division SMBJ110AHM3_A/I
- Part No.:
- SMBJ110AHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ110AHM3_A/I.pdf
- Description:
- TVS DIODE 110VWM 177VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:7,879
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Product details
Overview
SMBJ110AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features 110 V stand-off voltage (VWM), 122–135 V breakdown voltage (VBR) at 1 mA, 177 V maximum clamping voltage (VC) at 3.4 A peak pulse current (IPPM), and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in industrial motor drives, telecom power supplies, and automotive body control modules.
For engineers reviewing the SMBJ110AHM3_A/I datasheet, SMBJ110AHM3_A/I pinout, SMBJ110AHM3_A/I application, or SMBJ110AHM3_A/I equivalent, this page delivers verified electrical parameters, thermal derating behavior, AEC-Q101 qualification status, clamping performance under surge conditions, and direct replacement guidance for high-reliability board-level ESD and lightning surge protection.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, leveraging glass-passivated silicon junction technology to deliver sub-nanosecond response time and low incremental surge resistance. Its 177 V clamping voltage at 3.4 A IPPM ensures reliable suppression of transients exceeding IEC 61000-4-5 Level 4 (4 kV surge) on 110 V DC systems.
The device is halogen-free, RoHS-compliant, and qualified to AEC-Q101 for automotive use - confirmed by HM3 suffix and revision code "A/I". Thermal resistance is RθJA = 100 °C/W (typ.) and RθJL = 20 °C/W (typ.), enabling stable operation up to TJ = 150 °C with appropriate PCB copper pad layout (0.2" × 0.2" per terminal).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 110 V - maximum continuous reverse operating voltage before significant leakage; sets upper limit for protected line voltage. |
| VBR (min/max) | 122 V / 135 V at IT = 1 mA - guaranteed avalanche initiation range; defines minimum overvoltage threshold for clamping action. |
| VC @ IPPM | 177 V at 3.4 A - clamped voltage during 10/1000 µs surge; determines maximum stress imposed on downstream ICs. |
| PPPM | 600 W - peak pulse power handling with 10/1000 µs waveform; supports repeated surge events at 0.01% duty cycle. |
| ID @ VWM | 1.0 µA - reverse leakage at rated stand-off voltage; ensures minimal power loss and noise coupling in standby. |
| TJ max. | +150 °C - maximum junction temperature; enables deployment in under-hood automotive and industrial environments. |
| Package | SMB (DO-214AA) - standardized surface-mount outline with cathode band marking; compatible with automated pick-and-place. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads, MSL Level 1 (J-STD-020), 260 °C reflow peak. Cathode indicated by band; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts surge current to ground when voltage exceeds VBR. |
| Anode (unbanded end) | Reference node | Typically tied to system ground or lower-potential rail; completes clamping path during overvoltage event. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including BCM, infotainment power rails, and sensor interfaces per stress test requirements. |
| 600 W peak pulse power | Withstands IEC 61000-4-5 4 kV surge (10/1000 µs) without degradation when mounted on 5 mm × 5 mm copper pads. |
| Halogen-free & RoHS-compliant | HM3 suffix confirms compliance with JEDEC J-STD-20 and EU RoHS Directive 2011/65/EU, including lead-free solder compatibility. |
| Low clamping ratio (VC/VBR ≈ 1.39) | Ensures tight voltage margin between breakdown and clamping - critical for protecting 120 V-rated components. |
| MSL Level 1 moisture sensitivity | Enables standard SMT reflow without baking; supports high-yield manufacturing in automated assembly lines. |
Applications
| Industrial Motor Drives | Telecom Power Supplies |
|---|---|
|
Use Scenario: Protection of 110 V DC bus against switching transients from IGBT gate drivers and contactor bounce. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed across input capacitor to limit voltage overshoot during load dump or regenerative braking. Use Value: Limits transient excursions to ≤177 V, preventing damage to 200 V-rated electrolytic capacitors and PMICs. |
Use Scenario: Surge suppression on -48 V DC telecom rectifier outputs exposed to lightning-induced surges on long-line feeds. IC Role / Device Role / Timing Role: Standoff-rated TVS connected between output rail and chassis ground to shunt common-mode energy. Use Value: Clamps 4 kV IEC 61000-4-5 surges within 1 ns, maintaining output regulation and avoiding brownout resets. |
| Automotive Body Control Modules | Industrial PLC I/O Modules |
|
Use Scenario: Input protection for LIN bus transceivers and power window motor drivers subjected to ISO 7637-2 Pulse 1/2a/5a. IC Role / Device Role / Timing Role: Unidirectional clamp on 12 V supply rail upstream of LDO regulators and microcontrollers. Use Value: Survives 100 A/50 ms load dump pulses while holding rail voltage below 180 V - preserving MCU reset integrity. |
Use Scenario: Field-side protection of 24 V digital input channels receiving signals from proximity sensors and limit switches. IC Role / Device Role / Timing Role: TVS placed between input terminal and common reference to absorb inductive kickback and ESD events. Use Value: Limits induced voltage spikes to <177 V, preventing latch-up in optocoupler input stages and FPGA I/O banks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110AHE3_A/I | Same electrical specs, but RoHS-compliant without halogen-free certification; E3 suffix instead of HM3. | Lacks halogen-free compliance documentation required for some automotive Tier 1 programs. | Select SMBJ110AHM3_A/I when halogen-free material declaration (e.g., IEC 61249-2-21) is contractually mandated. |
| SMCJ110A-HM3_A/I | Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package; 1500 W PPPM rating vs. 600 W. | Higher power handling supports longer surge durations (e.g., ISO 16750-2 load dump), but requires larger PCB area. | Choose SMBJ110AHM3_A/I where space-constrained layouts preclude SMC footprint, and 600 W suffices for target threat level. |
Compared with SMBJ110AHE3_A/I, SMBJ110AHM3_A/I adds halogen-free assurance without sacrificing performance; versus SMCJ110A-HM3_A/I, it trades 2.5× peak power for 40% smaller board area - ideal for compact 110 V DC protection where surge repetition is low-duty-cycle.
Availability
SMBJ110AHM3_A/I is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive body control modules requiring stable component supply with full traceability and lifecycle management.
Supply support for SMBJ110AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The SMBJ series targets board-level transient protection in harsh environments - engineered for fast response, repeatable clamping, and qualification to automotive and industrial standards including AEC-Q101 and IEC 61000-4-5.
FAQ
What is the clamping voltage of SMBJ110AHM3_A/I at its rated peak pulse current?
The SMBJ110AHM3_A/I has a maximum clamping voltage (VC) of 177 V at 3.4 A peak pulse current (IPPM) under 10/1000 µs waveform conditions. This value is measured with the device mounted on 0.2" × 0.2" copper pads per terminal and represents the upper voltage limit imposed on protected circuitry during surge events. The SMBJ110AHM3_A/I maintains this clamping performance across its specified operating temperature range.
Is SMBJ110AHM3_A/I qualified for automotive applications?
Yes, SMBJ110AHM3_A/I is AEC-Q101 qualified, as confirmed by the HM3 suffix and revision code "A/I" in its ordering designation. It meets stress test requirements for temperature cycling, humidity bias, mechanical shock, and surge immunity applicable to automotive electronic control units. The SMBJ110AHM3_A/I is commonly used in body control modules, lighting drivers, and power distribution units where automotive-grade reliability is mandatory.
What does the "HM3" suffix mean in SMBJ110AHM3_A/I?
The "HM3" suffix in SMBJ110AHM3_A/I indicates halogen-free, RoHS-compliant construction meeting JEDEC J-STD-20 and IEC 61249-2-21 material requirements. It distinguishes the part from E3 (RoHS only) and HE3/HM3 variants with AEC-Q101 qualification. The "A/I" revision code denotes specific wafer lot and assembly traceability - critical for automotive PPAP documentation and failure analysis traceability for the SMBJ110AHM3_A/I.
How does SMBJ110AHM3_A/I compare to bidirectional TVS diodes like SMBJ110CA?
SMBJ110AHM3_A/I is unidirectional and intended for DC line protection where polarity is fixed; SMBJ110CA is bidirectional and suited for AC or floating signal lines. The SMBJ110AHM3_A/I exhibits forward voltage drop (~3.5 V at 50 A) and asymmetric conduction, whereas SMBJ110CA clamps equally in both directions with no forward conduction path. For 110 V DC rails, SMBJ110AHM3_A/I provides lower leakage and tighter clamping than its bidirectional counterpart.
What is the thermal resistance of SMBJ110AHM3_A/I, and how does it affect layout design?
The SMBJ110AHM3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W and junction-to-lead (RθJL) of 20 °C/W. To maintain TJ ≤ 150 °C under 5.0 W steady-state dissipation, PCB layout must include ≥0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal with internal thermal vias. The SMBJ110AHM3_A/I's thermal performance directly impacts surge repetition rate capability and long-term reliability in high-temperature enclosures.
SMBJ110AHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 122V
- Voltage - Clamping (Max) @ Ipp:
- 177V
- Current - Peak Pulse (10/1000µs):
- 3.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ110AHM3_A/I FAQ
1.How can I place an order for SMBJ110AHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ110AHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ110AHM3_A/I reliable?
The price and inventory of SMBJ110AHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ110AHM3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ110AHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ110AHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ110AHM3_A/I?
SMBJ110AHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ110AHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ110AHM3_A/I?
For technical support, including SMBJ110AHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ110AHM3_A/I requirements.
6.How does Aetrix verify that SMBJ110AHM3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ110AHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ110AHM3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ110AHM3_A/I?
All SMBJ110AHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ110AHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ110AHM3_A/I part is unused and in its original packaging.
Return procedure for SMBJ110AHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ110AHM3_A/I Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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