Vishay General Semiconductor - Diodes Division SMBJ110AHM3_B/H
- Part No.:
- SMBJ110AHM3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ110AHM3_B/H.pdf
- Description:
- 600W,110V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:2,069
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Product details
Overview
SMBJ110AHM3_B/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode designed for robust overvoltage protection of sensitive electronics. It features a 110 V standoff voltage (VWM), 122–135 V breakdown range (VBR at 1 mA), 177 V maximum clamping voltage (VC) at 3.4 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in power supply rails and I/O lines of industrial motor drives.
For engineers reviewing the SMBJ110AHM3_B/H datasheet, SMBJ110AHM3_B/H pinout, SMBJ110AHM3_B/H application, or SMBJ110AHM3_B/H equivalent, this device is selected for high-reliability DC bus surge suppression where fast response (<1 ps), low clamping ratio (VC/VBR ≈ 1.45), and AEC-Q101-qualified halogen-free construction are required.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds its specified VBR range (122–135 V). Its glass-passivated junction ensures stable breakdown characteristics and low leakage (<1.0 µA at VWM = 110 V), while the SMB (DO-214AA) package enables automated placement and meets MSL Level 1 reflow requirements (260 °C peak).
Thermal performance is defined by RθJA = 100 °C/W (typ.) and RθJL = 20 °C/W (typ.), supporting operation up to +150 °C junction temperature. The device sustains 100 A non-repetitive forward surge (8.3 ms half-sine) and exhibits a VBR temperature coefficient of +0.107 %/°C - critical for thermal stability in high-ambient environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 110 V - Maximum continuous reverse operating voltage before significant leakage begins; defines safe DC rail margin. |
| VBR (Breakdown Voltage) | 122–135 V at 1 mA - Confirmed avalanche initiation range; ensures predictable turn-on during transients. |
| VC (Clamping Voltage) | 177 V at IPPM = 3.4 A (10/1000 µs) - Limits downstream voltage stress during surge events. |
| PPPM (Peak Pulse Power) | 600 W - Sustains standardized lightning/surge energy without failure under JEDEC test conditions. |
| IPPM (Peak Pulse Current) | 3.4 A - Maximum transient current handled at rated clamping voltage; derived from VC and PPPM. |
| TJmax | +150 °C - Enables use in under-hood automotive and industrial enclosures without derating. |
| Package | SMB (DO-214AA) - Surface-mount footprint (5.21 × 4.06 mm) compatible with standard SMT assembly and IPC-7351B land patterns. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads; polarity indicated by cathode band on unidirectional devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference | Connected to lower-potential side (e.g., ground or return path); defines conduction direction in unidirectional mode. |
| Cathode | Avalanche clamping node / Surge sink | Connected to protected line (e.g., 110 V DC bus); absorbs transient energy into ground path during overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables compliance with IEC 61000-4-5 Level 4 (4 kV surge) on 110 V lines with minimal layout area. |
| AEC-Q101 qualified & halogen-free (HM3 suffix) | Validated for automotive powertrain and body electronics; supports RoHS and JESD201 Class 2 whisker resistance. |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes voltage overshoot across protected ICs, reducing risk of gate oxide damage in MOSFET drivers. |
| 100 °C/W junction-to-ambient thermal resistance | Allows direct PCB copper pad mounting (0.2" × 0.2") without heatsinks in <5 W average dissipation scenarios. |
| Glass passivated junction | Ensures long-term parameter stability and low leakage drift over 10+ year field life in humid industrial environments. |
Applications
| Industrial Motor Drive DC Bus Protection | Automotive HVAC Blower Control Module |
|---|---|
|
Use Scenario: Suppresses switching spikes and load dump transients on 110 V nominal DC bus feeding BLDC motor inverters. IC Role / Device Role / Timing Role: Unidirectional TVS placed between bus (+) and chassis ground to clamp surges within 1 ps. Use Value: Limits voltage excursion to ≤177 V, protecting 200 V-rated IGBT gate drivers and current sense amplifiers. |
Use Scenario: Guards microcontroller I/O and MOSFET gate drive lines against battery reversal and alternator load dump in HVAC actuators. IC Role / Device Role / Timing Role: Standoff-rated TVS on 12 V auxiliary rail, activated only during >110 V transients (e.g., jump-start events). Use Value: Prevents latch-up in 3.3 V MCU peripherals by clamping induced coupling from high-current motor windings. |
| Telecom Power Shelf Input Stage | Renewable Energy Charge Controller |
|
Use Scenario: Installed at input of -48 V telecom rectifier modules to absorb lightning-induced common-mode surges on distribution lines. IC Role / Device Role / Timing Role: Unidirectional clamp referenced to system ground, absorbing differential-mode energy via low-inductance layout. Use Value: Maintains <1 µA leakage at -48 V, avoiding false trips in redundant power monitoring circuits. |
Use Scenario: Protects MPPT controller inputs from solar panel string voltage surges during rapid cloud-clear transitions or lightning proximity. IC Role / Device Role / Timing Role: Front-end TVS on PV+ line, sized for 110 V nominal open-circuit voltage with 25 % safety margin. Use Value: Withstands 100 A surge (8.3 ms) without degradation, ensuring reliability across 20-year PV system lifetime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110AHE3_B/H | RoHS-compliant but not halogen-free; lacks JESD201 Class 2 whisker resistance certification. | Suitable for commercial-grade industrial equipment where automotive qualification is not mandated. | Select when cost sensitivity outweighs halogen-free requirement and AEC-Q101 is unnecessary. |
| SMBJ110A-M3/5B | Same electrical specs; packaged in 13" tape-and-reel (3200 pcs) vs. 7" reel (750 pcs); no AEC-Q101 qualification. | Preferred for high-volume consumer electronics manufacturing with extended reel logistics. | Choose for non-automotive volume production requiring larger reel quantities and standard RoHS compliance. |
Compared with SMBJ110AHM3_B/H, the HE3 variant trades halogen-free construction and automotive qualification for lower unit cost, while the M3/5B offers higher reel quantity but omits AEC-Q101 - making SMBJ110AHM3_B/H the sole option meeting both halogen-free and automotive reliability requirements in SMB package.
Availability
SMBJ110AHM3_B/H is available at Aetrix Electronics and suitable for industrial motor drives, automotive HVAC modules, telecom power shelves, and renewable energy charge controllers requiring stable component supply and long-term lifecycle support.
Supply support for SMBJ110AHM3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability and application-specific validation.
The SMBJ series targets high-energy transient suppression in harsh environments - engineered for automotive, industrial, and telecom systems where consistent clamping performance and AEC-Q101 compliance are mandatory.
FAQ
What is the clamping voltage of SMBJ110AHM3_B/H at its rated peak pulse current?
The SMBJ110AHM3_B/H has a maximum clamping voltage (VC) of 177 V at a peak pulse current (IPPM) of 3.4 A with a 10/1000 µs waveform. This value is measured per JEDEC standards and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ110AHM3_B/H maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C).
Is SMBJ110AHM3_B/H qualified for automotive applications?
Yes, SMBJ110AHM3_B/H is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HM3" (halogen-free, RoHS-compliant, and AEC-Q101 qualified). This qualification covers stress tests including high-temperature reverse bias, temperature cycling, and mechanical shock - validating SMBJ110AHM3_B/H for under-hood and body electronics where reliability is mission-critical.
What does the "HM3" suffix indicate in SMBJ110AHM3_B/H?
The "HM3" suffix in SMBJ110AHM3_B/H denotes halogen-free, RoHS-compliant construction with AEC-Q101 qualification. It distinguishes this variant from E3 (RoHS only) and HE3 (RoHS + AEC-Q101, but not halogen-free). The HM3 grade also meets JESD201 Class 2 whisker resistance and UL 94 V-0 flammability standards - essential for automotive and industrial safety certifications.
Can SMBJ110AHM3_B/H be used in bidirectional configurations?
No, SMBJ110AHM3_B/H is a unidirectional TVS diode, as indicated by the "A" suffix and cathode band marking. Bidirectional variants use the "CA" suffix (e.g., SMBJ110CA). Using SMBJ110AHM3_B/H in bidirectional applications would result in forward conduction during negative transients, potentially damaging the device or failing to protect the circuit.
What is the thermal resistance of SMBJ110AHM3_B/H from junction to ambient?
The typical junction-to-ambient thermal resistance (RθJA) of SMBJ110AHM3_B/H is 100 °C/W when mounted on the recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes still air conditions and is critical for calculating steady-state temperature rise under continuous power dissipation - though SMBJ110AHM3_B/H is primarily rated for transient, not continuous, power handling.
SMBJ110AHM3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 122V
- Voltage - Clamping (Max) @ Ipp:
- 177V
- Current - Peak Pulse (10/1000µs):
- 3.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ110AHM3_B/H FAQ
1.How can I place an order for SMBJ110AHM3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ110AHM3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ110AHM3_B/H reliable?
The price and inventory of SMBJ110AHM3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ110AHM3_B/H is usually 5 days.
3.What payment methods are accepted for SMBJ110AHM3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ110AHM3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ110AHM3_B/H?
SMBJ110AHM3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ110AHM3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ110AHM3_B/H?
For technical support, including SMBJ110AHM3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ110AHM3_B/H requirements.
6.How does Aetrix verify that SMBJ110AHM3_B/H is sourced from the original manufacturer or authorized distributors?
All SMBJ110AHM3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ110AHM3_B/H meets industry standards.
7.What is the process for return or replacement of SMBJ110AHM3_B/H?
All SMBJ110AHM3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ110AHM3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ110AHM3_B/H part is unused and in its original packaging.
Return procedure for SMBJ110AHM3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ110AHM3_B/H Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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