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Vishay General Semiconductor - Diodes Division SMBJ110C-E3/52
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- Part No.:
- SMBJ110C-E3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ110C-E3/52.pdf
- Description:
- TVS DIODE 110VWM 196VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:6,794
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Product details
Overview
SMBJ110C-E3/52 from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 110 V stand-off voltage (VWM), 122–135 V breakdown voltage (VBR) at 1 mA, 177 V maximum clamping voltage (VC) at 3.4 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform.
For engineers reviewing the SMBJ110C-E3/52 datasheet, SMBJ110C-E3/52 pinout, SMBJ110C-E3/52 application, or SMBJ110C-E3/52 equivalent, this device is selected for high-energy surge suppression in industrial power supplies, automotive ECUs, and telecom interface circuits where fast response (<1 ns), low clamping ratio, and AEC-Q101 qualification (via HE3 variant) are critical design requirements.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (>1 µA leakage at 110 V), then rapidly avalanches below 135 V to divert transient energy away from downstream ICs. Its glass-passivated junction ensures stable breakdown characteristics and long-term reliability under repetitive surges.
The SMBJ110C-E3/52 is rated for 150 °C maximum junction temperature, exhibits 0.107 %/°C temperature coefficient of VBR, and achieves thermal resistance of 100 °C/W (junction-to-ambient) on standard 0.2" × 0.2" copper pads - enabling predictable derating above 25 °C ambient per Figure 2 in the datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 110 V - Maximum continuous reverse operating voltage before significant leakage; defines safe DC rail margin. |
| VBR (min/max) | 122 V / 135 V at 1 mA - Confirmed avalanche onset range; ensures reliable triggering above system nominal voltage. |
| VC @ IPPM | 177 V at 3.4 A - Clamped voltage during 10/1000 µs surge; determines maximum stress on protected ICs. |
| PPPM | 600 W - Peak pulse power handling capability; supports IEC 61000-4-5 Level 4 (4 kV) surge testing. |
| IPPM | 3.4 A - Peak pulse current corresponding to VC; used to size PCB trace width and grounding paths. |
| TJ max. | 150 °C - Maximum junction temperature; sets thermal design limits for enclosure airflow and board layout. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard pad layout; required for thermal derating calculations. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band; polarity-critical for unidirectional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lowest potential node; completes clamping path during transient events. |
| Cathode | High-side surge input terminal | Connected to protected line (e.g., 110 V rail); avalanche conduction occurs from cathode to anode. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables compliance with IEC 61000-4-5 surge immunity standards up to 4 kV in industrial environments. |
| 177 V clamping voltage at 3.4 A | Limits voltage overshoot across protected MOSFETs or regulators during lightning-induced transients. |
| Glass passivated junction | Ensures stable VBR tolerance and low parameter drift over 10+ years of field operation. |
| MSL Level 1 (260 °C reflow) | Supports lead-free SMT assembly without moisture sensitivity concerns or baking requirements. |
| RoHS-compliant, commercial grade (E3 suffix) | Meets EU RoHS Directive 2011/65/EU; suitable for consumer, industrial, and telecom end equipment. |
Applications
| Industrial Power Supply Protection | Automotive Body Control Module (BCM) |
|---|---|
|
Use Scenario: Protecting 110 V DC input stage of programmable logic controller (PLC) power module against load dump and inductive switching spikes. IC Role / Device Role / Timing Role: Shunt-type transient suppressor placed directly across input terminals, clamping surges within nanoseconds. Use Value: Prevents latch-up or gate oxide damage in upstream buck controllers by limiting transient voltage to ≤177 V. |
Use Scenario: Safeguarding LIN bus transceiver supply rail in BCM against battery voltage transients during jump-start or alternator load dump. IC Role / Device Role / Timing Role: Unidirectional TVS connected between VCC and GND, triggered only during positive overvoltage events. Use Value: Maintains transceiver functionality during 12 V system surges up to 35 V, meeting ISO 7637-2 Pulse 5a requirements. |
| Telecom Remote Radio Unit (RRU) | Renewable Energy Inverter DC Link |
|
Use Scenario: Guarding Ethernet PHY power pins in outdoor RRU enclosures exposed to lightning-induced surges on PoE or auxiliary DC feeds. IC Role / Device Role / Timing Role: Primary-level TVS on 12 V/24 V bias rails, coordinated with secondary MOVs and gas discharge tubes. Use Value: Reduces failure rate of PHY ICs by limiting surge energy dissipation to <10 mJ per event via fast sub-ns response. |
Use Scenario: Protecting gate driver ICs on 110 V DC link of solar microinverter against switching-induced voltage spikes from IGBT turn-off. IC Role / Device Role / Timing Role: Localized clamping device mounted adjacent to driver IC supply pins to minimize loop inductance. Use Value: Suppresses ringing and overshoot exceeding 135 V, preventing false triggering or destruction of level-shift circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110A-E3/52 | Unidirectional, identical VWM/VBR/VC specs; same SMB package and RoHS compliance. | No functional difference; "A" and "C" suffixes both denote unidirectional variants per Vishay ordering nomenclature. | Select SMBJ110A-E3/52 if legacy BOM references "A" suffix; electrically interchangeable with SMBJ110C-E3/52. |
| SMCJ110A-E3/52 | Same electrical specs but in larger SMC (DO-214AB) package; 1500 W PPPM, higher IPPM (7.9 A), lower RθJA (50 °C/W). | Better thermal performance and surge margin; requires larger PCB footprint and different pad layout. | Choose SMCJ110A-E3/52 when higher surge endurance or extended thermal headroom is required; not drop-in compatible. |
Compared with SMBJ110C-E3/52, SMBJ110A-E3/52 offers identical protection performance in the same footprint, while SMCJ110A-E3/52 trades board space for 2.5× higher pulse power and improved thermal management - critical for high-reliability or high-cycle-count deployments.
Availability
SMBJ110C-E3/52 is available at Aetrix Electronics and suitable for industrial power supplies, automotive body control modules, and telecom remote radio units requiring stable component supply, consistent RoHS compliance, and verified surge performance across production lots.
Supply support for SMBJ110C-E3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in harsh environments - targeting industrial automation, automotive electronics, and communications infrastructure where robustness and repeatable clamping behavior are non-negotiable.
FAQ
What is the clamping voltage of SMBJ110C-E3/52 at its rated peak pulse current?
The SMBJ110C-E3/52 has a maximum clamping voltage (VC) of 177 V at its specified peak pulse current (IPPM) of 3.4 A under a 10/1000 µs waveform. This value is measured per Figure 1 and Table on page 2 of Vishay document 88392 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ110C-E3/52 maintains this clamping performance across its full operating temperature range.
Is SMBJ110C-E3/52 suitable for automotive applications?
The SMBJ110C-E3/52 is RoHS-compliant and qualified to commercial temperature grade (−55 °C to +150 °C), but it is not AEC-Q101 qualified in the E3 suffix configuration. For automotive use, engineers should select the SMBJ110CHE3 variant (HE3 suffix), which carries AEC-Q101 qualification and is explicitly listed in Vishay's automotive ordering codes. The SMBJ110C-E3/52 itself is intended for industrial and telecom applications.
How does the SMBJ110C-E3/52 differ from bidirectional variants like SMBJ110CA-E3/52?
The SMBJ110C-E3/52 is unidirectional, meaning it conducts only during positive overvoltage events relative to its cathode terminal, whereas SMBJ110CA-E3/52 is bidirectional and protects against surges of either polarity. Bidirectional types exhibit symmetric VBR in both directions and lack polarity marking. The SMBJ110C-E3/52 is appropriate for DC rails with defined ground reference, while SMBJ110CA-E3/52 suits AC-coupled or floating signal lines.
What is the thermal resistance and how does it affect SMBJ110C-E3/52 layout?
The SMBJ110C-E3/52 has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes minimum recommended pad layout per Vishay's mechanical drawing. To maintain safe junction temperatures under repetitive surges, PCB layout must provide adequate copper area and avoid thermal isolation - undersized traces or insufficient thermal vias will cause premature thermal derating and reduced surge endurance for the SMBJ110C-E3/52.
Can SMBJ110C-E3/52 be used in parallel for higher surge current handling?
No - SMBJ110C-E3/52 devices should not be paralleled due to manufacturing tolerances in VBR (122–135 V), which cause uneven current sharing and potential thermal runaway. Vishay does not recommend paralleling SMBJ series TVS diodes. For higher surge ratings, select a single device with greater PPPM such as SMCJ110A-E3/52 (1500 W), or implement staged protection with upstream MOVs and downstream TVS like SMBJ110C-E3/52.
SMBJ110C-E3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 122V
- Voltage - Clamping (Max) @ Ipp:
- 196V
- Current - Peak Pulse (10/1000µs):
- 3.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ110C-E3/52 FAQ
1.How can I place an order for SMBJ110C-E3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ110C-E3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ110C-E3/52 reliable?
The price and inventory of SMBJ110C-E3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ110C-E3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ110C-E3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ110C-E3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ110C-E3/52?
SMBJ110C-E3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ110C-E3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ110C-E3/52?
For technical support, including SMBJ110C-E3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ110C-E3/52 requirements.
6.How does Aetrix verify that SMBJ110C-E3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ110C-E3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ110C-E3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ110C-E3/52?
All SMBJ110C-E3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ110C-E3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ110C-E3/52 part is unused and in its original packaging.
Return procedure for SMBJ110C-E3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ110C-E3/52 Tags
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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