Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ110C-E3/5B

Part No.:
SMBJ110C-E3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ110C-E3/5B.pdf
Description:
TVS DIODE 110VWM 196VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,476

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ110C-E3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 110 V stand-off voltage (VWM), 122–135 V breakdown voltage (VBR) at 1 mA, 177 A peak pulse current (IPPM) under 10/1000 µs waveform, and clamps transients to ≤177 V at rated surge. It is deployed on power rails and signal lines in industrial motor drives to protect MOSFET gate drivers from inductive switching spikes.

For engineers reviewing the SMBJ110C-E3/5B datasheet, SMBJ110C-E3/5B pinout, SMBJ110C-E3/5B application, or SMBJ110C-E3/5B equivalent, key selection criteria include clamping voltage vs. protected device's absolute maximum rating, thermal resistance (RθJA = 100 °C/W), unidirectional polarity marking, RoHS-compliant matte tin plating, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.

Technical Context

This TVS diode operates as a voltage-clamping device triggered by transient overvoltages exceeding its reverse stand-off voltage (110 V). Its silicon avalanche junction responds in <1 ps to suppress ESD, lightning-induced surges, and inductive kickback while maintaining low leakage (<1.0 µA at VWM). The device sustains 600 W peak pulse power (10/1000 µs) and handles 100 A non-repetitive forward surge (8.3 ms half-sine).

Thermally, it relies on PCB copper pad area for heat dissipation-rated RθJA = 100 °C/W assumes 0.2" × 0.2" (5.0 mm × 5.0 mm) pads per terminal. Its glass-passivated chip junction and MSL Level 1 moisture sensitivity enable lead-free reflow up to 260 °C without popcorn effect.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 110 V - Maximum continuous reverse operating voltage before clamping begins; sets upper limit for normal circuit operation.
VBR min/max 122 V / 135 V at IT = 1 mA - Confirmed breakdown range ensures reliable triggering above VWM with margin against tolerance drift.
VC @ IPPM ≤177 V at 177 A (10/1000 µs) - Clamping voltage defines worst-case stress imposed on downstream ICs during surge events.
PPPM 600 W - Peak pulse power handling capacity determines survivability against standardized lightning/surge waveforms.
IFSM 100 A - Single half-sine surge rating (8.3 ms) supports protection of power-stage components during fault conditions.
RθJA 100 °C/W - Thermal resistance value used to calculate junction temperature rise under sustained power dissipation (e.g., 5.0 W PD).
Leakage ID ≤1.0 µA at 110 V - Low reverse leakage minimizes standby power loss and avoids false triggering in high-impedance circuits.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band on body; anode is unmarked end.

Pin/Terminal Circuit Role Design Meaning
Cathode (banded end) Transient current sink node Connected to protected line; conducts surge current to ground when Vreverse > VBR.
Anode (unbanded end) Reference/return path Typically tied to system ground or lower-potential rail; completes clamping path during overvoltage event.

Key Features

Feature Design Value
600 W peak pulse power (10/1000 µs) Enables compliance with IEC 61000-4-5 Level 3 (1 kV surge) on 24 V/48 V industrial bus lines with appropriate series impedance.
Clamping ratio VC/VBR ≈ 1.39 Indicates efficient avalanche energy absorption-lower ratio reduces stress on downstream MOSFETs or controllers.
MSL Level 1, peak reflow 260 °C Supports single-pass lead-free reflow without preconditioning or baking, reducing manufacturing complexity and cost.
RoHS-compliant, halogen-free option available Meets EU RoHS Directive 2011/65/EU and JEDEC J-STD-20E requirements for environmentally constrained applications.
100 A IFSM (8.3 ms) Provides margin for short-circuit protection in DC motor drive outputs where back-EMF and stall currents coexist.

Applications

Industrial Motor Drives Telecom Power Supplies

Use Scenario: Protection of gate driver ICs and bootstrap FETs against inductive voltage spikes during IGBT/MOSFET switching in servo amplifiers.

IC Role / Device Role / Timing Role: Unidirectional clamping element placed between gate driver output and power FET source, activated within picoseconds of overvoltage onset.

Use Value: Limits gate-source voltage to ≤177 V, preventing oxide breakdown in 200 V-rated gate drivers while sustaining repeated 600 W surges.

Use Scenario: Input-stage surge suppression on -48 V telecom rectifier outputs exposed to lightning-induced transients on central office distribution lines.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on DC input rail upstream of DC/DC converters and PMICs.

Use Value: Clamps 10/1000 µs surges to ≤177 V while maintaining <1.0 µA leakage at nominal -48 V, avoiding false trips in low-power monitoring circuits.

Automotive Body Control Modules Industrial Sensor Signal Conditioning

Use Scenario: Protection of LIN bus transceivers and microcontroller I/O pins from load-dump and jump-start transients in 12 V vehicle subsystems.

IC Role / Device Role / Timing Role: Unidirectional TVS connected between LIN line and chassis ground, referenced to battery potential.

Use Value: Withstands ISO 16750-2 Pulse 5a (load dump, 35 V/400 ms) via thermal mass and clamps fast spikes (ISO 7637-2 Pulse 1/2) to safe levels for 3.3 V logic interfaces.

Use Scenario: Shielding analog front-end op-amps and ADC inputs in factory-floor pressure/temperature sensors from ESD and cable discharge events.

IC Role / Device Role / Timing Role: Low-capacitance (<100 pF) unidirectional clamp on differential sensor lines (e.g., 4–20 mA loop or RS-485).

Use Value: Adds <1.0 µA leakage at 110 V bias but introduces negligible signal distortion-critical for sub-mV-level precision measurements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ110A-E3/5B Identical electrical specs and package; differs only in part suffix convention-"A" denotes unidirectional, "C" is legacy alternate marking for same device. No functional difference; both rated for same VWM, VBR, and IPPM. Used interchangeably in Vishay's ordering matrix. Select SMBJ110C-E3/5B when matching legacy BOMs referencing "C" suffix; otherwise SMBJ110A-E3/5B is functionally identical and more commonly stocked.
SMCJ110A-E3/57T Same VWM/VBR but in larger SMC (DO-214AB) package; higher PPPM = 1500 W, lower RθJA = 40 °C/W, and IPPM = 442 A. Better suited for high-energy surges (e.g., outdoor AC mains interfaces); requires larger PCB footprint and different pad layout. Choose SMCJ110A-E3/57T only when 600 W is insufficient and board space allows SMC footprint; SMBJ110C-E3/5B remains optimal for space-constrained 24–48 V DC systems.

Compared with SMBJ110A-E3/5B, SMBJ110C-E3/5B offers identical protection performance in the same SMB package, while SMCJ110A-E3/57T delivers 2.5× higher surge capacity at the cost of 2.5× larger board area-making SMBJ110C-E3/5B the preferred choice for compact industrial and telecom DC power rails.

Availability

SMBJ110C-E3/5B is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive body control modules requiring stable component supply, RoHS compliance, and AEC-Q101-qualified alternatives.

Supply support for SMBJ110C-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and automotive qualification.

The SMBJ series is engineered for high-reliability transient suppression in harsh environments-targeting industrial automation, telecom infrastructure, and automotive electronics where robustness against ESD, lightning, and inductive switching is critical.

FAQ

What is the clamping voltage of SMBJ110C-E3/5B at its rated peak pulse current?

The SMBJ110C-E3/5B clamps to a maximum of 177 V when subjected to its rated 177 A peak pulse current (10/1000 µs waveform). This value is measured per IEC 61000-4-5 test conditions and defines the upper voltage stress imposed on protected circuitry during surge events. The clamping voltage is guaranteed across temperature and lifetime, ensuring consistent protection behavior in SMBJ110C-E3/5B deployments.

Is SMBJ110C-E3/5B suitable for bidirectional signal line protection?

No, SMBJ110C-E3/5B is a unidirectional TVS diode-its cathode band indicates polarity, and it conducts only in reverse breakdown. For bidirectional protection (e.g., RS-485, USB, or AC lines), use the CA-suffixed variant SMBJ110CA-E3/5B. Using SMBJ110C-E3/5B on bidirectional signals risks forward conduction and failure during negative transients. Always verify polarity alignment in the schematic before placing SMBJ110C-E3/5B.

What is the maximum printed circuit board copper pad size recommended for SMBJ110C-E3/5B thermal performance?

Vishay specifies thermal ratings for SMBJ110C-E3/5B assuming 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. Larger pads improve heat dissipation but do not change the rated RθJA = 100 °C/W unless validated per JEDEC standards. Exceeding this pad size may reduce thermal resistance slightly, but SMBJ110C-E3/5B's 5.0 W power dissipation limit remains governed by ambient temperature and airflow-not pad area alone.

Does SMBJ110C-E3/5B meet AEC-Q101 for automotive use?

The base SMBJ110C-E3/5B is commercial-grade and RoHS-compliant but not AEC-Q101 qualified. For automotive applications, Vishay offers the AEC-Q101-qualified variant SMBJ110CHE3_B/I (with HE3 suffix), which undergoes additional stress testing including temperature cycling, HTRB, and ESD. SMBJ110C-E3/5B may be used in non-safety-critical automotive subsystems only after full system-level validation-but SMBJ110CHE3_B/I is required for certified designs.

How does the leakage current of SMBJ110C-E3/5B affect low-power sensor circuits?

SMBJ110C-E3/5B exhibits ≤1.0 µA reverse leakage at its 110 V stand-off voltage, making it suitable for high-impedance sensor nodes where leakage could shift bias points or increase quiescent current. In 3.3 V or 5 V analog signal paths, this leakage is negligible-less than typical op-amp input bias currents. However, in ultra-low-power IoT sensors drawing <10 µA sleep current, parallel placement of SMBJ110C-E3/5B must account for cumulative leakage across multiple protection devices in the BOM.

SMBJ110C-E3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
110V
Voltage - Breakdown (Min):
122V
Voltage - Clamping (Max) @ Ipp:
196V
Current - Peak Pulse (10/1000µs):
3.1A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ110C-E3/5B FAQ

1.How can I place an order for SMBJ110C-E3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ110C-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ110C-E3/5B reliable?

The price and inventory of SMBJ110C-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ110C-E3/5B is usually 5 days.

3.What payment methods are accepted for SMBJ110C-E3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ110C-E3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ110C-E3/5B?

SMBJ110C-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ110C-E3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ110C-E3/5B?

For technical support, including SMBJ110C-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ110C-E3/5B requirements.

6.How does Aetrix verify that SMBJ110C-E3/5B is sourced from the original manufacturer or authorized distributors?

All SMBJ110C-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ110C-E3/5B meets industry standards.

7.What is the process for return or replacement of SMBJ110C-E3/5B?

All SMBJ110C-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ110C-E3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ110C-E3/5B part is unused and in its original packaging.

Return procedure for SMBJ110C-E3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ110C-E3/5B Tags

  • SMBJ110C-E3/5B
  • SMBJ110C-E3/5B PDF
  • SMBJ110C-E3/5B Datasheet
  • SMBJ110C-E3/5B Specifications
  • SMBJ110C-E3/5B Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ110C-E3/5B
  • Buy SMBJ110C-E3/5B
  • SMBJ110C-E3/5B Price
  • SMBJ110C-E3/5B Distributor
  • SMBJ110C-E3/5B Supplier
  • SMBJ110C-E3/5B Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER