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Vishay General Semiconductor - Diodes Division SMBJ110D-M3/I
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- Part No.:
- SMBJ110D-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ110D-M3/I.pdf
- Description:
- TVS DIODE 110VWM 174VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:2,725
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Product details
Overview
SMBJ110D-M3/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 110 V stand-off voltage (VWM), 124–133 V breakdown voltage (VBR) at 1 mA, 174 V maximum clamping voltage (VC) at 3.45 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - deployed on power rails and signal lines in industrial motor drives and telecom interface circuits.
For engineers reviewing the SMBJ110D-M3/I datasheet, SMBJ110D-M3/I pinout, SMBJ110D-M3/I application, or SMBJ110D-M3/I equivalent, key selection criteria include verified clamping performance under repetitive surge stress, thermal resistance (RθJA = 125 °C/W on minimum pad layout), unidirectional polarity marking, and M3 suffix compliance with JESD 201 Class 2 whisker testing and RoHS/halogen-free requirements.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VBR, it avalanches to divert surge current away from downstream ICs or MOSFETs. Its low incremental surge resistance ensures stable clamping during fast transients, and its ±3.5 % VBR tolerance enables precise coordination with system overvoltage thresholds.
Designed for automated SMT placement, the device meets MSL Level 1 per J-STD-020 with 260 °C lead-free reflow peak, and its matte tin-plated terminals comply with J-STD-002 and JESD 22-B102 solderability standards - critical for high-yield manufacturing in automotive and industrial control modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 110 V - maximum continuous reverse operating voltage before clamping initiates |
| VBR min/max | 124 V / 133 V at 1 mA - tight ±3.5 % tolerance ensures predictable turn-on across production lots |
| VC @ IPPM | 174 V at 3.45 A - clamping voltage limits protected circuit stress during 10/1000 μs surges |
| PPPM | 600 W - peak pulse power handling capability per standard 10/1000 μs waveform |
| ID @ VWM | 0.5 μA - ultra-low leakage preserves signal integrity and battery life in always-on systems |
| TJ max | +150 °C - junction temperature limit enabling operation in high-ambient industrial environments |
| RθJA | 125 °C/W - thermal resistance on minimum recommended PCB pad layout dictates derating above 25 °C |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, unidirectional configuration with cathode band marking on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lowest potential node; current flows from cathode to anode during clamping |
| Cathode | High-side surge input terminal | Marked with band; connects to protected line (e.g., 110 V rail or RS-485 bus); absorbs positive transients |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables accurate coordination with system overvoltage thresholds without margin stacking |
| 600 W PPPM (10/1000 μs) | Handles IEC 61000-4-5 Level 4 surges (4 kV line-to-earth) with margin in compact SMB footprint |
| M3 suffix compliance | Guarantees halogen-free, RoHS-compliant materials and JESD 201 Class 2 whisker resistance for long-term reliability |
| MSL Level 1 rating | Supports single-reflow assembly without dry-pack or baking, reducing manufacturing cost and complexity |
| Low ID (0.5 μA @ 110 V) | Minimizes standby power loss in high-impedance sensor interfaces and battery-backed systems |
Applications
| Industrial Motor Drives | Telecom Interface Protection |
|---|---|
Use Scenario: Protecting gate drivers and feedback sensors from switching-induced transients in 3-phase inverters. IC Role / Device Role / Timing Role: Shunt TVS placed across DC bus or gate drive supply rails to clamp voltage spikes exceeding 110 V. Use Value: Prevents MOSFET avalanche failure and ADC offset drift by limiting clamped voltage to ≤174 V during 3.45 A surges. | Use Scenario: Safeguarding RS-485 transceivers against lightning-induced surges on outdoor data lines. IC Role / Device Role / Timing Role: Unidirectional TVS connected between differential pair and ground to suppress common-mode transients. Use Value: Maintains signal integrity under IEC 61000-4-5 surge tests due to fast response and low clamping ratio (VC/VWM = 1.58). |
| Power Supply Input Stage | Automotive Body Control Modules |
Use Scenario: Secondary overvoltage protection after primary MOV or fuse in 110 V AC/DC front-end designs. IC Role / Device Role / Timing Role: Final-clamp device on DC output rail to protect downstream regulators and microcontrollers. Use Value: Provides precise 110 V standoff with minimal leakage (0.5 μA), avoiding false triggering while ensuring fail-safe shutdown. | Use Scenario: Protecting LIN bus transceivers and sensor inputs from load-dump and jump-start events. IC Role / Device Role / Timing Role: Unidirectional TVS on 12 V supply line to absorb 120 V/100 ms load-dump pulses. Use Value: Withstands repeated 600 W surges without degradation, validated per ISO 7637-2 Pulse 5a requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110A-M3/I | Bidirectional variant; symmetric clamping in both polarities; same VWM (110 V), VC (174 V), and PPPM (600 W) | Required where AC-coupled or floating signal lines need protection against bipolar transients (e.g., Ethernet PHY) | Select SMBJ110A-M3/I only if bidirectional clamping is mandated; SMBJ110D-M3/I is optimal for DC rails with defined polarity. |
| SMCJ110DHE3_A/H | Larger SMC (DO-214AB) package; higher RθJA (90 °C/W vs. 125 °C/W); identical electrical specs but 1.5× higher thermal mass | Better suited for high-repetition-rate surges where sustained power dissipation exceeds SMBJ's 1.0 W at TA = 25 °C | Choose SMCJ110DHE3_A/H when thermal budget demands lower junction temperature rise under frequent surge events. |
Compared with SMBJ110A-M3/I and SMCJ110DHE3_A/H, the SMBJ110D-M3/I offers the smallest footprint for unidirectional 110 V protection, optimized for space-constrained PCBs where polarity is fixed and surge repetition is infrequent.
Availability
SMBJ110D-M3/I is available at Aetrix Electronics and suitable for industrial motor drives, telecom interface protection, and automotive body control modules requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SMBJ110D-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability and application-specific performance.
The SMBJ series is engineered for high-energy transient suppression in harsh environments - targeting industrial automation, telecom infrastructure, and automotive subsystems where precision clamping and long-term stability are critical.
FAQ
What is the clamping voltage of SMBJ110D-M3/I at its rated peak pulse current?
The SMBJ110D-M3/I has a maximum clamping voltage (VC) of 174 V at its rated peak pulse current (IPPM) of 3.45 A, measured using the standard 10/1000 μs waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is confirmed in Vishay's official datasheet revision 09-Jan-2024 (Document Number: 87606). The SMBJ110D-M3/I maintains this clamping performance across its qualified operating temperature range.
Does SMBJ110D-M3/I support lead-free reflow soldering?
Yes, SMBJ110D-M3/I is qualified for lead-free reflow soldering with a maximum peak temperature of 260 °C, meeting MSL Level 1 per J-STD-020. Its matte tin-plated terminals comply with J-STD-002 and JESD 22-B102 solderability standards. The M3 suffix confirms halogen-free, RoHS-compliant construction - essential for modern electronics manufacturing. This qualification applies directly to the SMBJ110D-M3/I part number as shipped in 13" tape-and-reel packaging.
How does the VBR tolerance of SMBJ110D-M3/I impact system-level surge coordination?
The SMBJ110D-M3/I features a tight ±3.5 % breakdown voltage (VBR) tolerance (124–133 V at 1 mA), enabling precise coordination with upstream fuses, downstream IC absolute maximum ratings, and other protection stages. This narrow spread avoids overdesign margin stacking and ensures consistent clamping onset across production units. For example, in a 110 V DC power rail, this tolerance guarantees clamping initiates no later than 133 V - well below typical 150 V MOSFET drain-source breakdown limits. The SMBJ110D-M3/I datasheet explicitly specifies this tolerance for the D-suffix unidirectional family.
Can SMBJ110D-M3/I be used in bidirectional signal line protection?
No, SMBJ110D-M3/I is a unidirectional TVS diode and must not be used on AC-coupled or floating bidirectional signal lines such as RS-485 or CAN without external biasing. Its cathode-band marking indicates polarity-sensitive operation: it clamps only positive transients relative to the anode. For true bidirectional protection, Vishay specifies the SMBJ110CD-M3/I variant (with CD suffix), which provides symmetrical clamping in both directions. Using SMBJ110D-M3/I in place of a bidirectional device risks unprotected negative transients and potential system damage.
What is the thermal resistance of SMBJ110D-M3/I on standard PCB layout?
The SMBJ110D-M3/I has a typical junction-to-ambient thermal resistance (RθJA) of 125 °C/W when mounted on the minimum recommended PCB pad layout, as specified in Vishay's datasheet. This value governs power derating: at ambient temperatures above 25 °C, its 1.0 W steady-state power dissipation must be linearly reduced. For instance, at 75 °C ambient, maximum allowable PD drops to 0.6 W. This RθJA is measured per JEDEC standards and applies specifically to the SMBJ110D-M3/I in its native SMB (DO-214AA) package with standard copper foil patterns.
SMBJ110D-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 124V
- Voltage - Clamping (Max) @ Ipp:
- 174V
- Current - Peak Pulse (10/1000µs):
- 3.45A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ110D-M3/I FAQ
1.How can I place an order for SMBJ110D-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ110D-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ110D-M3/I reliable?
The price and inventory of SMBJ110D-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ110D-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ110D-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ110D-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ110D-M3/I?
SMBJ110D-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ110D-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ110D-M3/I?
For technical support, including SMBJ110D-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ110D-M3/I requirements.
6.How does Aetrix verify that SMBJ110D-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ110D-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ110D-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ110D-M3/I?
All SMBJ110D-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ110D-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ110D-M3/I part is unused and in its original packaging.
Return procedure for SMBJ110D-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ110D-M3/I Tags
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DESD3V3E1BL-7B
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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