Vishay General Semiconductor - Diodes Division SMBJ110-E3/52
- Part No.:
- SMBJ110-E3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ110-E3/52.pdf
- Description:
- TVS DIODE 110VWM 196VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:5,436
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Product details
Overview
SMBJ110-E3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed to protect sensitive electronics against voltage transients induced by inductive load switching and lightning surges. It features a 110 V stand-off voltage (VWM), 122–135 V breakdown voltage (VBR) at 1 mA, 177 V maximum clamping voltage (VC) at 3.4 A peak pulse current, and 600 W peak pulse power rating with a 10/1000 µs waveform.
For engineers reviewing the SMBJ110-E3/52 datasheet, SMBJ110-E3/52 pinout, SMBJ110-E3/52 application, or SMBJ110-E3/52 equivalent, this device is selected for robust overvoltage protection on DC power rails and signal lines in industrial motor drives, telecom power supplies, and automotive ECUs where fast response (<1 ps), low clamping ratio, and AEC-Q101-compliant reliability are required.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (>1 MΩ at VWM), but triggers into low-impedance conduction when transient voltage exceeds VBR, limiting downstream voltage to ≤177 V at 3.4 A. Its glass-passivated junction ensures stable leakage performance and long-term reliability across -55 °C to +150 °C operating temperature range.
The device uses a single P-N junction structure optimized for fast avalanche response and low incremental surge resistance (Rdyn ≈ 18 Ω derived from ΔVC/ΔIPPM). It meets J-STD-020 MSL Level 1 and is RoHS-compliant with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 110 V - Maximum continuous reverse working voltage before clamping begins; defines safe operating margin for 120 VDC systems. |
| VBR (min/max) | 122 V / 135 V at 1 mA - Confirmed breakdown threshold range; ensures predictable turn-on without premature triggering. |
| VC @ IPPM | 177 V at 3.4 A - Clamping voltage during 10/1000 µs surge; limits stress on downstream ICs to <180 V. |
| PPPM | 600 W - Peak pulse power handling capability; supports repetitive 0.01% duty cycle surges per JEDEC standards. |
| IPPM | 3.4 A - Peak pulse current corresponding to VC; enables coordination with upstream fuses or current limiters. |
| TJ max | +150 °C - Maximum junction temperature; allows operation in high-ambient environments like engine compartments. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard 0.2" × 0.2" copper pads; informs PCB thermal design. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with cathode band marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); terminals are matte tin-plated for lead-free soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during forward conduction | Connected to system ground or low-side return path; defines polarity for unidirectional clamping. |
| Cathode | Current exit terminal during reverse-biased clamping | Connected to protected line (e.g., 110 V rail); band-marked end indicates cathode per JEDEC DO-214AA convention. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables robust protection against IEC 61000-4-5 Level 4 surges (4 kV/2 Ω) on 110 V lines without derating. |
| 177 V clamping voltage at 3.4 A | Provides 1.6× overvoltage margin above VWM, ensuring MOSFETs and controllers remain within safe SOA limits. |
| Glass passivated junction | Delivers stable leakage (<1 µA at VWM) and long-term reliability under thermal cycling and humidity stress. |
| MSL Level 1, 260 °C reflow compatible | Supports standard SMT assembly without moisture sensitivity concerns or baking requirements. |
| RoHS-compliant, commercial grade (E3 suffix) | Meets global environmental regulations while maintaining cost-effective supply for non-automotive applications. |
Applications
| Industrial Motor Drives | Telecom Power Supplies |
|---|---|
|
Use Scenario: Protection of 110 V DC bus against switching transients from IGBT gate drivers and contactor coil de-energization. IC Role / Device Role / Timing Role: Shunt clamping device placed directly across DC input terminals to clamp spikes before they reach DC-DC converters. Use Value: Limits transient voltage to ≤177 V, preventing damage to 200 V-rated electrolytic capacitors and controller ICs. |
Use Scenario: Overvoltage suppression on -48 V or +110 V telecom rectifier outputs exposed to lightning-induced surges on outdoor plant wiring. IC Role / Device Role / Timing Role: Primary front-end TVS on power entry board, coordinated with gas discharge tubes for staged protection. Use Value: Responds in <1 ps to divert >3 A surge current, maintaining output regulation during transient events. |
| Automotive Body Control Modules | Industrial PLC I/O Modules |
|
Use Scenario: Protection of LIN bus power rails and microcontroller VDD inputs in BCMs subjected to load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional clamp on 12 V/24 V auxiliary rails feeding CAN/LIN transceivers and sensors. Use Value: Withstands 150 °C ambient and provides repeatable clamping after 1000+ surge cycles per AEC-Q101 stress testing. |
Use Scenario: Input protection for analog current loop (4–20 mA) and digital discrete input channels exposed to field wiring transients. IC Role / Device Role / Timing Role: Point-of-entry TVS on terminal block side of isolation barrier, before optocouplers or ADC front-ends. Use Value: Low leakage (<1 µA) prevents signal offset errors; 110 V VWM accommodates 100 VAC-derived DC supplies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110A-M3/52 | Halogen-free, RoHS-compliant variant with identical electrical specs and SMB package. | No difference in circuit function or layout; selected only when halogen-free compliance is mandated. | Choose for green manufacturing programs requiring halogen-free materials without performance trade-offs. |
| SMCJ110A-E3/52 | Same VWM/VC but in larger SMC (DO-214AB) package; 1500 W PPPM, higher IPPM (7.7 A). | Requires larger PCB footprint; used where higher surge energy (e.g., IEC 61000-4-5 Level 5) must be absorbed. | Select when system-level surge testing requires >600 W capability; not drop-in due to different pad layout and thermal mass. |
Compared with SMBJ110A-M3/52, SMBJ110-E3/52 offers identical protection performance with standard RoHS compliance; compared with SMCJ110A-E3/52, it trades surge capacity for compactness-ideal for space-constrained 110 V DC protection where 600 W suffices.
Availability
SMBJ110-E3/52 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive body control modules requiring stable component supply, consistent parametric performance, and full traceability from Vishay's authorized distribution channel.
Supply support for SMBJ110-E3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is part of Vishay's TRANSZORB® TVS portfolio, engineered for fast-response overvoltage protection in harsh environments including automotive, industrial, and telecom infrastructure.
FAQ
What is the maximum clamping voltage of SMBJ110-E3/52 under surge conditions?
The SMBJ110-E3/52 has a maximum clamping voltage (VC) of 177 V at 3.4 A peak pulse current with a 10/1000 µs waveform. This value is measured per IEC 61000-4-5 test conditions and defines the upper voltage limit imposed on protected circuits during transient events. The SMBJ110-E3/52 maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C) and after repeated surge exposure.
Is SMBJ110-E3/52 suitable for automotive applications?
SMBJ110-E3/52 is rated for commercial-grade use and is RoHS-compliant but not AEC-Q101 qualified. For automotive applications requiring qualification, the equivalent SMBJ110HE3/52 (AEC-Q101 qualified, RoHS-compliant) should be selected. The SMBJ110-E3/52 may be used in non-safety-critical automotive subsystems where qualification is not mandated, but its datasheet does not include AEC-Q101 stress test data or automotive-grade screening.
What is the thermal resistance of SMBJ110-E3/52, and how does it affect PCB layout?
The SMBJ110-E3/52 has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes minimal copper area; increasing pad size or adding thermal vias reduces RθJA. For reliable operation at full 600 W surge rating, PCB layout must provide adequate copper area and avoid thermal bottlenecks-especially important in enclosed industrial enclosures where ambient temperatures exceed 70 °C.
How does SMBJ110-E3/52 differ from bidirectional variants like SMBJ110CA?
The SMBJ110-E3/52 is unidirectional and features a cathode band marking; it conducts only in reverse bias for clamping and blocks forward current. In contrast, SMBJ110CA is bidirectional with no polarity marking and clamps symmetrically in both directions. SMBJ110-E3/52 is used on DC rails where polarity is fixed (e.g., +110 V to GND), while SMBJ110CA suits AC-coupled or differential signal lines. Their VWM, VBR, and VC values differ accordingly-SMBJ110CA has lower VWM (≈77 V) due to dual-junction architecture.
What is the leakage current specification for SMBJ110-E3/52 at its rated stand-off voltage?
At its 110 V stand-off voltage (VWM), the SMBJ110-E3/52 exhibits a maximum reverse leakage current (ID) of 1.0 µA at 25 °C. This low leakage ensures minimal power loss and avoids interference with high-impedance sensing circuits or battery-powered systems. Leakage increases with temperature but remains below 10 µA up to 125 °C, as confirmed in Vishay's thermal derating curves.
SMBJ110-E3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 122V
- Voltage - Clamping (Max) @ Ipp:
- 196V
- Current - Peak Pulse (10/1000µs):
- 3.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ110-E3/52 FAQ
1.How can I place an order for SMBJ110-E3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ110-E3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ110-E3/52 reliable?
The price and inventory of SMBJ110-E3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ110-E3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ110-E3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ110-E3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ110-E3/52?
SMBJ110-E3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ110-E3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ110-E3/52?
For technical support, including SMBJ110-E3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ110-E3/52 requirements.
6.How does Aetrix verify that SMBJ110-E3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ110-E3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ110-E3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ110-E3/52?
All SMBJ110-E3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ110-E3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ110-E3/52 part is unused and in its original packaging.
Return procedure for SMBJ110-E3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ110-E3/52 Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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D5V0L1B2WS-7
Diodes Incorporated
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