Vishay General Semiconductor - Diodes Division SMBJ11AHE3/52
- Part No.:
- SMBJ11AHE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ11AHE3/52.pdf
- Description:
- TVS DIODE 11VWM 18.2VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:6,347
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ11AHE3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping inductive switching transients and lightning-induced surges on power and signal lines. It features 11 V standoff voltage (VWM), 12.2–13.5 V breakdown range (VBR at 1 mA), 18.2 V maximum clamping voltage (VC) at 33 A peak pulse current, and 600 W peak pulse power (10/1000 µs waveform). It is widely deployed for protecting MOSFET gates, microcontroller I/O pins, and sensor interfaces in industrial motor drives.
For engineers reviewing the SMBJ11AHE3/52 datasheet, SMBJ11AHE3/52 pinout, SMBJ11AHE3/52 application, or SMBJ11AHE3/52 equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature limit (TJ = 150 °C), and compliance with UL 497B surge protector classification.
Technical Context
This TVS diode operates as a voltage-clamping protection device in series with sensitive downstream circuitry. Its glass-passivated silicon junction enables sub-nanosecond response to transient overvoltages, while its low incremental surge resistance ensures minimal voltage overshoot during high-current events. The device is rated for repetitive 600 W pulses at 0.01% duty cycle and supports 100 A non-repetitive forward surge current (8.3 ms half-sine).
Thermal performance is defined by RθJA = 100 °C/W (on 0.2" × 0.2" copper pads) and RθJL = 20 °C/W, enabling reliable operation up to TJ = 150 °C. The cathode band marking identifies polarity, and the matte tin-plated leads meet J-STD-002 solderability standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 11 V - Maximum continuous reverse operating voltage before conduction begins; defines safe operating margin below clamping threshold. |
| VBR (min/max) | 12.2 V / 13.5 V at 1 mA - Breakdown voltage range where device transitions from high-impedance to low-impedance clamping state. |
| VC @ IPPM | 18.2 V at 33 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on protected IC or MOSFET. |
| PPPM | 600 W - Peak pulse power handling capability; defines energy absorption capacity per transient event. |
| IFSM | 100 A - Non-repetitive forward surge current rating (8.3 ms half-sine); critical for inductive load switch-off protection. |
| TJ max. | 150 °C - Maximum junction temperature; sets thermal derating boundary for sustained power dissipation. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard 5 mm × 5 mm copper pads; used to calculate temperature rise under DC bias. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads. Cathode identified by black band on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during forward conduction | Connected to ground or low-side return path in unidirectional TVS configuration; carries full surge current during clamping. |
| Cathode | Current exit terminal during forward conduction; marked with band | Connected to protected line (e.g., 12 V rail or sensor output); defines polarity-sensitive placement on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JEDEC standards. |
| 600 W peak pulse power (10/1000 µs) | Enables robust protection against ISO 7637-2 Pulse 1/2a/5a and IEC 61000-4-5 Level 4 surges without external heatsinking. |
| Low clamping ratio (VC/VBR ≈ 1.42) | Minimizes overvoltage stress on downstream components-critical for 3.3 V or 5 V logic-level interfaces. |
| MSL Level 1 (260 °C reflow) | Supports lead-free SMT assembly without moisture sensitivity concerns or baking requirements. |
| Glass passivated junction | Ensures stable leakage current (<5 µA at VWM) and long-term parameter stability under humidity and thermal stress. |
Applications
| Industrial Motor Drives | Automotive Body Control Modules |
|---|---|
|
Use Scenario: Protection of gate drivers and current-sense amplifiers against back-EMF spikes during MOSFET turn-off in BLDC inverters. IC Role / Device Role / Timing Role: Unidirectional clamping element placed between gate driver output and MOSFET gate, absorbing <100 ns transients. Use Value: Prevents gate oxide rupture and false triggering by limiting VGS excursion to ≤18.2 V during 33 A surge events. |
Use Scenario: Surge suppression on LIN bus lines and door module sensor inputs exposed to load dump and jump-start conditions. IC Role / Device Role / Timing Role: Standoff-clamp TVS connected between LIN signal line and chassis ground, responding within <1 ns to transients. Use Value: Maintains signal integrity under ISO 16750-2 load dump (up to 35 V, 100 ms) and meets AEC-Q101 automotive qualification. |
| Industrial PLC I/O Modules | Consumer Appliance Control Boards |
|
Use Scenario: Input protection for 24 V digital input channels receiving signals from proximity sensors and limit switches. IC Role / Device Role / Timing Role: Primary overvoltage clamp on field-side input traces, placed upstream of optocoupler or Schmitt trigger input stage. Use Value: Limits transient voltage to 18.2 V, ensuring compatibility with 24 V-rated interface ICs and preventing latch-up in microcontrollers. |
Use Scenario: Protection of MCU GPIOs and display backlight drivers in washing machine control boards subject to relay contact bounce and pump motor noise. IC Role / Device Role / Timing Role: Localized TVS on 5 V supply rail and I²C bus lines, mounted adjacent to connector entry points. Use Value: Suppresses 600 W transients induced by brushed motor commutation without affecting 5 V rail regulation or I²C timing margins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ11AHM3/52 | Halogen-free variant with identical electrical specs and AEC-Q101 qualification; same SMB package and pinout. | No functional difference; selected when halogen-free compliance is required per IPC-1752 or OEM environmental mandates. | Direct material substitution where RoHS + halogen-free certification is mandatory; no layout or validation changes needed. |
| SMCJ11AHE3/52 | Same VWM, VBR, and VC, but in larger SMC (DO-214AB) package with 1500 W PPPM rating and lower RθJA (50 °C/W). | Higher power handling and better thermal performance; suited for higher-energy surge environments (e.g., outdoor equipment). | Choose when system-level surge testing exceeds 600 W or board layout allows larger footprint; requires PCB pad revision. |
Compared with SMBJ11AHM3/52, SMBJ11AHE3/52 offers identical protection performance with standard RoHS compliance but excludes halogen-free certification; compared with SMCJ11AHE3/52, it provides compact size and cost efficiency at the expense of lower surge energy capacity and higher thermal resistance.
Availability
SMBJ11AHE3/52 is available at Aetrix Electronics and suitable for industrial motor drives, automotive body electronics, and consumer appliance control boards requiring stable component supply, AEC-Q101 qualification, and surface-mount surge protection with 600 W capability.
Supply support for SMBJ11AHE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and power MOSFETs with emphasis on reliability, precision, and application-specific optimization.
The SMBJ series was developed to deliver standardized, high-reliability transient suppression in compact surface-mount packages for automotive, industrial, and computing applications demanding AEC-Q101 qualification and UL 497B recognition.
FAQ
What is the clamping voltage of SMBJ11AHE3/52 at its rated peak pulse current?
The SMBJ11AHE3/52 has a maximum clamping voltage (VC) of 18.2 V when subjected to its rated peak pulse current of 33 A under the standard 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ11AHE3/52 maintains this clamping performance across its specified operating temperature range and is validated per AEC-Q101 stress tests.
Is SMBJ11AHE3/52 suitable for bidirectional transient protection?
No, SMBJ11AHE3/52 is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. For bidirectional protection, Vishay specifies the "CA" suffix (e.g., SMBJ11CA). Using SMBJ11AHE3/52 in a bidirectional configuration would result in forward conduction during negative transients, potentially damaging the device or failing to protect the circuit. The SMBJ11AHE3/52 must be oriented with cathode toward the protected line and anode to ground.
Does SMBJ11AHE3/52 require derating at elevated ambient temperatures?
Yes, SMBJ11AHE3/52 must be derated above TA = 25 °C per Figure 2 in the datasheet. Its peak pulse power (PPPM) decreases linearly with rising junction temperature, reaching ~50% of 600 W at TJ ≈ 100 °C. Derating is calculated using RθJA = 100 °C/W and the actual copper pad area; for designs operating near 150 °C junction limit, thermal simulation or empirical testing is recommended to confirm margin.
What does the "HE3" suffix indicate in SMBJ11AHE3/52?
"HE3" denotes a RoHS-compliant, AEC-Q101 qualified version of the SMBJ11A device. The "H" indicates AEC-Q101 qualification, "E3" confirms RoHS compliance (lead-free, bromine-free), and "/52" specifies packaging in 7" tape-and-reel with 750 units per reel. This suffix distinguishes it from commercial-grade variants like SMBJ11A-E3/52 (RoHS only) or SMBJ11AHM3/52 (halogen-free + AEC-Q101).
Can SMBJ11AHE3/52 be used in place of SMAJ11A in an existing design?
No-SMBJ11AHE3/52 uses the SMB (DO-214AA) package, while SMAJ11A uses the smaller SMA (DO-214AC) package. Though both share identical electrical ratings, the SMB package has larger terminals, higher surge current capability, and different pad layout requirements. Substituting SMBJ11AHE3/52 for SMAJ11A requires PCB land pattern revision and may affect board space and thermal profile. The SMBJ11AHE3/52 is not a drop-in replacement for SMAJ11A.
SMBJ11AHE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 33A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ11AHE3/52 FAQ
1.How can I place an order for SMBJ11AHE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ11AHE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ11AHE3/52 reliable?
The price and inventory of SMBJ11AHE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ11AHE3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ11AHE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ11AHE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ11AHE3/52?
SMBJ11AHE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ11AHE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ11AHE3/52?
For technical support, including SMBJ11AHE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ11AHE3/52 requirements.
6.How does Aetrix verify that SMBJ11AHE3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ11AHE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ11AHE3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ11AHE3/52?
All SMBJ11AHE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ11AHE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ11AHE3/52 part is unused and in its original packaging.
Return procedure for SMBJ11AHE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ11AHE3/52 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)