Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ11AHE3_A/H

Part No.:
SMBJ11AHE3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ11AHE3_A/H.pdf
Description:
TVS DIODE 11VWM 18.2VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,795

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ11AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode designed for robust overvoltage protection in power and signal lines. It features a 11 V stand-off voltage (VWM), 12.2–13.5 V breakdown voltage (VBR) at 1 mA, 18.2 V maximum clamping voltage (VC) at 33 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive power supplies, industrial sensor interfaces, and DC input protection circuits.

For engineers reviewing the SMBJ11AHE3_A/H datasheet, SMBJ11AHE3_A/H pinout, SMBJ11AHE3_A/H application, or SMBJ11AHE3_A/H equivalent, this device is selected for high-reliability transient suppression where AEC-Q101 qualification, low clamping ratio, and stable thermal performance up to 150 °C junction temperature are required.

Technical Context

This TVS diode operates as a unidirectional clamping device with cathode-band polarity marking, optimized for fast response (<1 ns) to ESD and surge events per IEC 61000-4-2/4-5. Its glass-passivated junction ensures stable leakage (<5 µA at VWM) and low incremental surge resistance, enabling precise voltage limiting during repetitive transients.

The SMBJ11AHE3_A/H is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), supports 5.0 W steady-state power dissipation at 50 °C ambient, and exhibits a +0.080 %/°C temperature coefficient of VBR - critical for predictable clamping behavior across automotive (-40 to +125 °C ambient) and industrial operating ranges.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 11 V - Maximum continuous reverse operating voltage before clamping initiates; defines safe DC bias margin for protected circuitry.
VBR (min/max) 12.2 V / 13.5 V at 1 mA - Verified breakdown threshold range ensuring reliable turn-on without premature conduction.
VC @ IPPM 18.2 V at 33 A - Clamped voltage under 10/1000 µs surge; determines maximum stress imposed on downstream ICs or MOSFETs.
PPPM 600 W - Peak pulse power handling capability; enables protection against lightning-induced surges and inductive switching spikes.
ID @ VWM ≤5.0 µA - Ultra-low reverse leakage at stand-off voltage; preserves efficiency in battery-powered or high-impedance sensor nodes.
TJ max. +150 °C - Maximum junction temperature rating; supports operation in under-hood automotive and enclosed industrial environments.
Package SMB (DO-214AA) - Standardized surface-mount outline with 5.59 mm × 4.06 mm footprint and 2.20 mm height; compatible with automated pick-and-place.

Pinout & Package

Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; polarity indicated by cathode band on unidirectional devices.

Pin/Terminal Circuit Role Design Meaning
Anode Current entry terminal in forward bias Connected to lower-potential side (e.g., GND or return path); forms clamping path when cathode is at higher potential.
Cathode Current exit terminal in forward bias; marked with band Connected to protected line (e.g., 12 V rail or signal trace); conducts surge current to ground during overvoltage event.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, humidity testing, and surge endurance - suitable for engine control units and ADAS power rails.
600 W peak pulse power (10/1000 µs) Withstands high-energy transients common in 12 V/24 V vehicle systems and industrial motor drives without degradation.
Low clamping ratio (VC/VBR ≈ 1.42) Minimizes voltage overshoot during clamping - protects sensitive gate oxides in MOSFETs and I/O pins in microcontrollers.
MSL Level 1 (260 °C reflow) Enables single-pass lead-free reflow assembly without moisture-related delamination or popcorn failure.
Glass passivated junction Ensures long-term stability of VBR and leakage parameters under thermal stress and humidity exposure.

Applications

Automotive Power Rail Protection Industrial Sensor Signal Line Protection

Use Scenario: 12 V battery-fed ECUs exposed to load dump (ISO 7637-2 Pulse 5a) and alternator ripple.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp transients above 13.5 V.

Use Value: Limits peak rail voltage to ≤18.2 V during 33 A surge, preventing damage to 16 V-rated LDOs and CAN transceivers.

Use Scenario: Analog output lines from pressure/temperature sensors in factory automation PLC modules.

IC Role / Device Role / Timing Role: TVS mounted at connector interface to shunt ESD (IEC 61000-4-2 ±8 kV contact) away from ADC front-end.

Use Value: Sub-5 µA leakage avoids measurement offset; 18.2 V clamping prevents latch-up in 3.3 V/5 V signal conditioning op-amps.

DC Input Protection for PoE PDs Motor Drive Gate Driver Protection

Use Scenario: Primary-side input of IEEE 802.3af/at powered devices subjected to cable discharge events.

IC Role / Device Role / Timing Role: Standoff-rated TVS on PSE-facing input to absorb induced surges before DC-DC controller.

Use Value: 11 V VWM allows full utilization of 57 V PoE nominal range while clamping transients before they reach primary FETs.

Use Scenario: High-side gate drive supply (e.g., bootstrap node) in BLDC inverters subject to Miller-induced spikes.

IC Role / Device Role / Timing Role: TVS connected between gate driver VDD and COM to clamp negative-going transients during switching.

Use Value: Fast <1 ns response prevents false turn-on of high-side MOSFETs; 150 °C TJ rating matches gate driver thermal environment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ11AHM3_A/H Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. No functional difference; selected when halogen-free material compliance is mandated by OEM or regional regulations. Direct material substitution where halogen content restrictions apply; same PCB layout and thermal profile.
1.5SMC11A Same VWM (11 V) and VC (18.2 V), but in larger SMC (DO-214AB) package; 1.5 kW PPPM rating vs. 600 W. Higher surge capacity suits infrequent high-energy events (e.g., outdoor telecom equipment), but requires larger board area. Choose when higher single-pulse energy tolerance is needed and board space permits SMC footprint.

Compared with SMBJ11AHM3_A/H, the SMBJ11AHE3_A/H offers identical protection performance with standard RoHS compliance; versus 1.5SMC11A, it trades peak power headroom for compact SMB footprint - optimizing for space-constrained automotive and portable industrial designs.

Availability

SMBJ11AHE3_A/H is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and PoE-powered device design requiring stable component supply and AEC-Q101 assurance.

Supply support for SMBJ11AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and automotive qualification.

The SMBJ series was developed specifically for high-volume, high-reliability transient suppression in automotive and industrial power systems - balancing clamping performance, thermal robustness, and automated assembly compatibility.

FAQ

What is the maximum clamping voltage of SMBJ11AHE3_A/H under a 10/1000 µs surge?

The SMBJ11AHE3_A/H has a maximum clamping voltage (VC) of 18.2 V when subjected to its rated peak pulse current of 33 A with a 10/1000 µs waveform. This value is measured per standard test conditions (TA = 25 °C) and defines the upper voltage limit imposed on protected circuitry during transient events - critical for ensuring compatibility with 16 V-rated downstream components. The SMBJ11AHE3_A/H maintains this clamping performance across its qualified operating temperature range.

Is SMBJ11AHE3_A/H suitable for automotive applications?

Yes, SMBJ11AHE3_A/H is AEC-Q101 qualified and explicitly designated for automotive use with ordering code suffix HE3. It meets requirements for temperature cycling, mechanical shock, and surge endurance relevant to engine control, body electronics, and ADAS subsystems. Its 150 °C maximum junction temperature, MSL Level 1 reflow rating, and verified performance under ISO 7637-2 load dump conditions make SMBJ11AHE3_A/H appropriate for under-hood and cabin-mounted ECUs.

How does the leakage current of SMBJ11AHE3_A/H compare at its 11 V stand-off voltage?

At its 11 V stand-off voltage (VWM), the SMBJ11AHE3_A/H exhibits a maximum reverse leakage current (ID) of 5.0 µA at 25 °C - confirmed per Vishay's Electrical Characteristics table. This ultra-low leakage preserves power integrity in always-on circuits and avoids loading high-impedance sensor outputs. Leakage remains within specification across the full -55 °C to +125 °C ambient range, supporting reliable operation in battery-backed and low-power industrial nodes using SMBJ11AHE3_A/H.

What package type does SMBJ11AHE3_A/H use, and what are its key mechanical dimensions?

SMBJ11AHE3_A/H uses the SMB (DO-214AA) surface-mount package: 5.59 mm × 4.06 mm body length/width, 2.20 mm maximum height, with 0.086 inch (2.18 mm) minimum cathode-to-anode lead spacing. The package features matte tin-plated leads compliant with J-STD-002 solderability standards and meets UL 94 V-0 flammability rating. Its compact size enables high-density placement in space-constrained layouts typical of modern automotive and industrial PCBs using SMBJ11AHE3_A/H.

Does SMBJ11AHE3_A/H have bidirectional capability?

No, SMBJ11AHE3_A/H is a unidirectional transient voltage suppressor, as indicated by the "A" suffix and cathode-band marking. It conducts only when the cathode is positive relative to the anode - ideal for DC rail protection where polarity is fixed. For bidirectional protection (e.g., AC lines or differential signals), Vishay offers the SMBJ11CA variant; SMBJ11AHE3_A/H must not be substituted in such applications without circuit redesign to accommodate polarity-sensitive clamping behavior.

SMBJ11AHE3_A/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
11V
Voltage - Breakdown (Min):
12.2V
Voltage - Clamping (Max) @ Ipp:
18.2V
Current - Peak Pulse (10/1000µs):
33A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ11AHE3_A/H FAQ

1.How can I place an order for SMBJ11AHE3_A/H through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ11AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ11AHE3_A/H reliable?

The price and inventory of SMBJ11AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ11AHE3_A/H is usually 5 days.

3.What payment methods are accepted for SMBJ11AHE3_A/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ11AHE3_A/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ11AHE3_A/H?

SMBJ11AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ11AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ11AHE3_A/H?

For technical support, including SMBJ11AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ11AHE3_A/H requirements.

6.How does Aetrix verify that SMBJ11AHE3_A/H is sourced from the original manufacturer or authorized distributors?

All SMBJ11AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ11AHE3_A/H meets industry standards.

7.What is the process for return or replacement of SMBJ11AHE3_A/H?

All SMBJ11AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ11AHE3_A/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ11AHE3_A/H part is unused and in its original packaging.

Return procedure for SMBJ11AHE3_A/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ11AHE3_A/H Tags

  • SMBJ11AHE3_A/H
  • SMBJ11AHE3_A/H PDF
  • SMBJ11AHE3_A/H Datasheet
  • SMBJ11AHE3_A/H Specifications
  • SMBJ11AHE3_A/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ11AHE3_A/H
  • Buy SMBJ11AHE3_A/H
  • SMBJ11AHE3_A/H Price
  • SMBJ11AHE3_A/H Distributor
  • SMBJ11AHE3_A/H Supplier
  • SMBJ11AHE3_A/H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER