Vishay General Semiconductor - Diodes Division SMBJ11AHE3_B/I
- Part No.:
- SMBJ11AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ11AHE3_B/I.pdf
- Description:
- 600W,11V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:5,827
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ11AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 11 V stand-off voltage (VWM), 12.2–13.5 V breakdown voltage (VBR) at 1 mA, and clamps transients to ≤18.2 V at 33 A peak pulse current (IPPM) under 10/1000 µs waveform - deployed on power rails and signal lines in industrial sensor interfaces.
For engineers reviewing the SMBJ11AHE3_B/I datasheet, SMBJ11AHE3_B/I pinout, SMBJ11AHE3_B/I application, or SMBJ11AHE3_B/I equivalent, this AEC-Q101 qualified TVS offers verified 600 W peak pulse power, low clamping ratio (VC/VBR ≈ 1.43), and MSL Level 1 moisture sensitivity - critical for automotive-grade ESD and load-dump protection design validation.
Technical Context
This unidirectional TVS operates as a voltage-clamping device triggered by reverse-biased avalanche breakdown. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low incremental surge resistance, enabling fast response (<1 ns) to ESD and lightning-induced transients. The device is rated for 100 A non-repetitive forward surge (IFSM, 8.3 ms half-sine) and supports continuous power dissipation of 5.0 W at TA = 50 °C.
Thermal performance is defined by RθJA = 100 °C/W (typ.) on standard 0.2" × 0.2" copper pads, with maximum junction temperature of +150 °C. Polarity is marked by a cathode band; it is not bidirectional - no CA suffix - and requires correct orientation in series with protected circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 11 V - Maximum continuous reverse operating voltage before leakage exceeds 5 µA; sets upper limit for normal circuit operation. |
| VBR (min/max) | 12.2 V / 13.5 V at IT = 1 mA - Confirmed avalanche onset range; defines minimum clamping threshold under transient stress. |
| VC @ IPPM | ≤18.2 V at 33 A (10/1000 µs) - Measured clamping voltage; determines worst-case voltage seen by downstream ICs during surge. |
| PPPM | 600 W - Peak pulse power handling capability; validates protection against IEC 61000-4-5 Level 4 surges (4 kV/2 Ω). |
| IFSM | 100 A - Single half-sine surge rating (8.3 ms); supports load-dump immunity in 12 V automotive systems. |
| TJ max | +150 °C - Maximum junction temperature; enables reliable operation in under-hood or industrial enclosures. |
| Package | SMB (DO-214AA) - Surface-mount outline with 5.59 mm × 4.06 mm footprint; compatible with automated pick-and-place and reflow. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads, MSL Level 1 (peak reflow 260 °C), UL 94 V-0 rated compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / low-side connection | Connected to ground or lower-potential rail; reverse-biased during clamping event. |
| Cathode | Reverse-biased terminal / high-side connection | Marked by band; connected to protected line (e.g., 12 V supply or CAN_H); conducts avalanche current during overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units and body electronics per stress test requirements. |
| 600 W peak pulse power (10/1000 µs) | Withstands IEC 61000-4-5 surge events up to 4 kV without degradation when mounted per recommended pad layout. |
| Low clamping ratio (VC/VBR ≈ 1.43) | Minimizes overvoltage stress on downstream MOSFETs or microcontrollers during transient suppression. |
| Glass passivated junction | Ensures long-term stability of VBR and low leakage (<5 µA at VWM) across temperature and lifetime. |
| MSL Level 1, 260 °C peak reflow | Enables single-pass lead-free reflow assembly without preconditioning or baking. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump transients (ISO 7637-2 Pulse 5a). IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between power input and bulk capacitor. Use Value: Limits voltage to ≤18.2 V during 33 A surge, preventing damage to LDOs and MCU power domains. |
Use Scenario: Shielding analog output lines (e.g., 4–20 mA transmitter) from ESD and inductive switching noise. IC Role / Device Role / Timing Role: Low-capacitance TVS connected from signal line to ground, preserving bandwidth. Use Value: Clamps ±15 kV contact ESD (IEC 61000-4-2) with sub-nanosecond response, avoiding signal distortion. |
| Telecom DC Power Input Protection | Consumer Device USB Port Surge Suppression |
|
Use Scenario: Safeguarding PoE-powered network switches against induced surges on 48 V DC input rails. IC Role / Device Role / Timing Role: Primary overvoltage clamp upstream of DC-DC converter input stage. Use Value: Absorbs 600 W pulses without thermal runaway, maintaining system uptime during lightning-induced grid disturbances. |
Use Scenario: Adding secondary-level surge protection to USB VBUS lines in portable audio devices. IC Role / Device Role / Timing Role: Secondary TVS after primary fuse and common-mode choke, targeting fast transients. Use Value: Provides <18.2 V clamping at 33 A while meeting USB-IF ESD immunity requirements (±15 kV air, ±8 kV contact). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ11AHM3_B/I | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. | No functional difference; selected where halogen-free compliance is mandated by OEM or regional regulation. | Direct material substitution when halogen-free bill-of-materials is required. |
| SMBJ11A-E3/5B | Same electrical characteristics but commercial-grade (non-AEC-Q101), packaged in 13" tape (3200 pcs). | Lacks automotive qualification; suitable for industrial or consumer applications with lower reliability requirements. | Cost-optimized alternative for non-automotive designs where AEC-Q101 is not mandatory. |
Compared with SMBJ11AHE3_B/I, the HM3 variant adds halogen-free compliance without altering performance, while the E3/5B version trades automotive qualification for lower cost and broader commercial availability - enabling tiered sourcing based on end-equipment certification needs.
Availability
SMBJ11AHE3_B/I is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and telecom power input protection requiring stable component supply and AEC-Q101 traceability.
Supply support for SMBJ11AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability and automotive-grade qualification.
The SMBJ series was engineered for high-energy transient suppression in harsh environments, targeting ISO 7637-2 and IEC 61000-4-5 compliant systems across automotive, industrial, and infrastructure markets.
FAQ
What is the clamping voltage of SMBJ11AHE3_B/I at its rated peak pulse current?
The SMBJ11AHE3_B/I clamps to a maximum of 18.2 V at its rated peak pulse current of 33 A under the standardized 10/1000 µs waveform. This value is measured per JEDEC test conditions and reflects worst-case voltage exposure for protected circuitry during surge events - a key parameter for validating margin against downstream IC absolute maximum ratings.
Is SMBJ11AHE3_B/I suitable for bidirectional signal line protection?
No, SMBJ11AHE3_B/I is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. For bidirectional protection (e.g., RS-485, CAN bus), the SMBJ11CA variant must be used. Using SMBJ11AHE3_B/I on AC-coupled or symmetrical signal lines risks forward conduction and improper clamping behavior.
Does SMBJ11AHE3_B/I meet automotive qualification standards?
Yes, SMBJ11AHE3_B/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in datasheet revision 09-Jan-2024. This qualification covers stress tests including HTGB, HTRB, and temperature cycling, making it suitable for under-hood and chassis-mounted automotive modules.
What is the maximum reverse leakage current for SMBJ11AHE3_B/I at its stand-off voltage?
At VWM = 11 V and TA = 25 °C, the SMBJ11AHE3_B/I exhibits a maximum reverse leakage current (ID) of 5.0 µA. This low leakage ensures minimal power loss in always-on circuits and avoids false triggering in high-impedance sensing nodes - critical for battery-powered sensor applications.
Can SMBJ11AHE3_B/I be used in lead-free reflow processes?
Yes, SMBJ11AHE3_B/I is rated for MSL Level 1 per J-STD-020 and supports peak reflow temperatures up to 260 °C, fully compatible with standard lead-free soldering profiles. No pre-baking is required, and its matte tin-plated leads comply with J-STD-002 and JESD 22-B102 solderability standards.
SMBJ11AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 33A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ11AHE3_B/I FAQ
1.How can I place an order for SMBJ11AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ11AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ11AHE3_B/I reliable?
The price and inventory of SMBJ11AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ11AHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ11AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ11AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ11AHE3_B/I?
SMBJ11AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ11AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ11AHE3_B/I?
For technical support, including SMBJ11AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ11AHE3_B/I requirements.
6.How does Aetrix verify that SMBJ11AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ11AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ11AHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ11AHE3_B/I?
All SMBJ11AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ11AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ11AHE3_B/I part is unused and in its original packaging.
Return procedure for SMBJ11AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ11AHE3_B/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

