Vishay General Semiconductor - Diodes Division SMBJ11CAHE3_B/I
- Part No.:
- SMBJ11CAHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ11CAHE3_B/I.pdf
- Description:
- 600W,11V 5%,BIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:4,840
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ11CAHE3_B/I from Vishay General Semiconductor is a bidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on signal and power lines. It features a 11 V standoff voltage (VWM), 12.2–13.5 V breakdown range (VBR at 1 mA), 600 W peak pulse power (10/1000 µs), and clamps to ≤18.2 V at 33 A peak surge current - protecting MOSFETs, ICs, and sensor interfaces in industrial and telecom equipment.
For engineers reviewing the SMBJ11CAHE3_B/I datasheet, SMBJ11CAHE3_B/I pinout, SMBJ11CAHE3_B/I application, or SMBJ11CAHE3_B/I equivalent, key selection criteria include bidirectional clamping capability, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (−55 to +150 °C), and compliance with UL 497B for surge protector classification.
Technical Context
This device operates as a voltage-clamping protection element using an avalanche breakdown mechanism, with symmetrical bidirectional conduction enabling suppression of both positive and negative transients without polarity sensitivity. Its glass-passivated junction ensures stable breakdown characteristics and low leakage (<5 µA at VWM), while the low incremental surge resistance supports effective energy diversion during fast-rising ESD or lightning-induced surges.
The SMBJ11CAHE3_B/I is rated for repetitive 10/1000 µs waveform pulses at 0.01% duty cycle and derates linearly above 25 °C ambient per Figure 2. It meets MSL Level 1 per J-STD-020, with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102, and qualifies under AEC-Q101 for automotive-grade reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 11 V - maximum continuous reverse operating voltage before clamping begins |
| VBR min/max | 12.2 V / 13.5 V at 1 mA - guaranteed breakdown onset window for reliable turn-on margin |
| VC @ IPPM | ≤18.2 V at 33 A - clamped voltage during 600 W transient, limiting stress on downstream components |
| PPPM | 600 W - peak pulse power handling with 10/1000 µs waveform, defining surge energy capacity |
| TJ max | +150 °C - maximum junction temperature, supporting operation in high-ambient industrial environments |
| RθJA | 100 °C/W - thermal resistance from junction to ambient on standard 0.2" × 0.2" copper pads |
| Leakage ID | ≤5 µA at VWM - minimal standby power loss and signal integrity impact in high-impedance circuits |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads; dimensions 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); UL 94 V-0 compliant molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias; common node in bidirectional configuration | Electrically symmetric with cathode - no polarity marking required for bidirectional operation |
| Cathode | Current exit terminal in forward bias; common node in bidirectional configuration | Identical electrical behavior to anode; device functions identically regardless of orientation on PCB |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or differential signal lines without polarity concerns |
| AEC-Q101 qualification | Validated for automotive electronics use including engine control, infotainment, and ADAS subsystems |
| 600 W peak pulse power | Withstands IEC 61000-4-5 Level 4 surge events (4 kV line-to-line, 2 kV line-to-ground) |
| Fast response time | Sub-nanosecond turn-on ensures clamping before sensitive ICs experience overvoltage damage |
| MSL Level 1 rating | Allows unlimited floor life and reflow compatibility up to 260 °C peak without moisture-related failure |
Applications
| Industrial Motor Drives | Automotive Sensor Interfaces |
|---|---|
Use Scenario: Protection of gate drivers and feedback sensing lines against inductive kickback from relay and solenoid switching. IC Role / Device Role / Timing Role: Voltage clamping element placed across MOSFET gate-source or op-amp input pins. Use Value: Limits transient overshoot to ≤18.2 V, preventing gate oxide rupture and analog front-end saturation. | Use Scenario: Shielding CAN/LIN bus transceivers and temperature/pressure sensors from load dump and jump-start surges. IC Role / Device Role / Timing Role: Bidirectional shunt clamp on differential data lines or supply rails feeding automotive sensors. Use Value: Maintains signal integrity during ISO 7637-2 Pulse 5a (75 V/350 ms) events without requiring polarity-aware layout. |
| Telecom Power Supplies | Consumer IoT Gateways |
Use Scenario: Input-stage surge suppression on 12 V/24 V DC inputs of PoE-powered base stations and remote radio units. IC Role / Device Role / Timing Role: Primary transient suppressor upstream of DC-DC converters and hot-swap controllers. Use Value: Absorbs 600 W surges while maintaining <5 µA leakage, minimizing standby power loss in always-on systems. | Use Scenario: ESD hardening of USB, Ethernet, and Zigbee antenna feedlines in smart home hubs and edge gateways. IC Role / Device Role / Timing Role: Board-level IEC 61000-4-2 contact discharge (±8 kV) and air discharge (±15 kV) protection device. Use Value: Sub-nanosecond response prevents latch-up in microcontrollers and RF transceivers during human-body-model events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ11CA-E3/52 | Same electrical specs and SMB package; RoHS-compliant commercial grade without AEC-Q101 qualification | Lacks automotive qualification; suitable for industrial/commercial designs not requiring AEC validation | Select when cost sensitivity outweighs need for automotive reliability documentation |
| SMAJ11CAHE3_A/H | Lower 400 W PPPM, SMA (DO-214AC) package with higher RθJA (140 °C/W), same VWM/VC | Reduced surge margin and thermal performance; limited to lower-energy transient environments | Choose only if board space constraints require smaller footprint and surge threat level is below IEC 61000-4-5 Level 3 |
Compared with SMBJ11CAHE3_B/I, the SMBJ11CA-E3/52 offers identical clamping and packaging but omits AEC-Q101 validation, while the SMAJ11CAHE3_A/H trades 33% lower surge power and inferior thermal dissipation for a 30% smaller footprint - making SMBJ11CAHE3_B/I optimal for automotive and high-reliability industrial deployments where full 600 W capability and qualification traceability are mandatory.
Availability
SMBJ11CAHE3_B/I is available at Aetrix Electronics and suitable for industrial motor drives, automotive sensor interfaces, and telecom power supplies requiring stable component supply, long-term lifecycle support, and AEC-Q101 qualified parts.
Supply support for SMBJ11CAHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for robust transient suppression in harsh environments - targeting automotive, industrial automation, and communications infrastructure where sustained surge immunity and qualification compliance are critical design requirements.
FAQ
What is the clamping voltage of SMBJ11CAHE3_B/I at its rated peak pulse current?
The SMBJ11CAHE3_B/I clamps to a maximum of 18.2 V at its peak pulse current of 33 A (10/1000 µs waveform). This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuitry during a worst-case transient event. The SMBJ11CAHE3_B/I maintains this clamping performance across its qualified operating temperature range of −55 °C to +150 °C.
Is SMBJ11CAHE3_B/I suitable for automotive applications?
Yes, SMBJ11CAHE3_B/I is AEC-Q101 qualified and explicitly designated for automotive use via its "HE3" suffix and ordering code structure. It meets stress-test requirements for temperature cycling, humidity, mechanical shock, and surge robustness defined in AEC-Q101. The SMBJ11CAHE3_B/I is deployed in engine control modules, body electronics, and ADAS sensor nodes where certified reliability is mandatory.
How does the bidirectional nature of SMBJ11CAHE3_B/I affect PCB layout?
The SMBJ11CAHE3_B/I has no polarity marking and identical electrical behavior in both directions, eliminating orientation constraints during automated placement. Unlike unidirectional TVS diodes, it requires no cathode band alignment - simplifying layout, reducing assembly errors, and enabling direct replacement in AC-coupled or differential signal paths. This symmetry is intrinsic to the SMBJ11CAHE3_B/I's internal structure and verified in its bidirectional VBR specification.
What is the thermal resistance of SMBJ11CAHE3_B/I and how does it impact power derating?
The SMBJ11CAHE3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" copper pads per JEDEC standards. This value directly determines safe operating area: at 75 °C ambient, its 5.0 W steady-state power dissipation derates to ~2.5 W. Engineers must apply this RθJA to calculate real-world junction temperature rise when sizing heatsinking or evaluating long-term reliability of the SMBJ11CAHE3_B/I in enclosed enclosures.
Does SMBJ11CAHE3_B/I meet any safety certifications for surge protection systems?
Yes, SMBJ11CAHE3_B/I carries Underwriters Laboratories recognition under UL 497B (QVGQ2) for surge protective devices, with file number E136766 covering both unidirectional and bidirectional variants. This certification validates its suitability in primary and secondary protection circuits for telecom, industrial, and building infrastructure applications. The SMBJ11CAHE3_B/I's UL listing is documented in Vishay's official datasheet revision 09-Jan-2024 (Document Number: 88392).
SMBJ11CAHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 33A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ11CAHE3_B/I FAQ
1.How can I place an order for SMBJ11CAHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ11CAHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ11CAHE3_B/I reliable?
The price and inventory of SMBJ11CAHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ11CAHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ11CAHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ11CAHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ11CAHE3_B/I?
SMBJ11CAHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ11CAHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ11CAHE3_B/I?
For technical support, including SMBJ11CAHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ11CAHE3_B/I requirements.
6.How does Aetrix verify that SMBJ11CAHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ11CAHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ11CAHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ11CAHE3_B/I?
All SMBJ11CAHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ11CAHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ11CAHE3_B/I part is unused and in its original packaging.
Return procedure for SMBJ11CAHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ11CAHE3_B/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

