Vishay General Semiconductor - Diodes Division SMBJ11D-M3/I
- Part No.:
- SMBJ11D-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ11D-M3/I.pdf
- Description:
- TVS DIODE 11VWM 17.9VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ11D-M3/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 11 V stand-off voltage (VWM), 12.4–13.3 V breakdown voltage (VBR) at 1 mA, 17.9 V maximum clamping voltage (VC) at 33.5 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - deployed in industrial sensor interfaces and MOSFET gate protection circuits.
For engineers reviewing the SMBJ11D-M3/I datasheet, SMBJ11D-M3/I pinout, SMBJ11D-M3/I application, or SMBJ11D-M3/I equivalent, this page delivers verified electrical parameters, thermal derating behavior, clamping performance under surge, polarity marking convention, and direct alternatives for ESD/lightning transient suppression in automotive body electronics, telecom line cards, and embedded power supplies.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: when reverse voltage exceeds VBR, it avalanches to divert surge current away from downstream ICs while maintaining VC ≤ 17.9 V at IPPM = 33.5 A. Its low incremental surge resistance and fast response time ensure effective suppression of transients induced by inductive switching or ESD events.
Thermal design is constrained by RθJA = 125 °C/W (on minimum pad layout) and TJ max = 150 °C; power dissipation is rated at 1.0 W at TA = 25 °C and derates linearly above that temperature. The M3 suffix confirms halogen-free, RoHS-compliant construction with JESD 201 Class 2 whisker resistance and UL 94 V-0 molding compound.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 11 V - maximum continuous reverse operating voltage before significant leakage; defines safe DC rail protection threshold. |
| VBR min/max | 12.4 V / 13.3 V at IT = 1 mA - tight ±3.5 % tolerance ensures predictable turn-on across production lots. |
| VC @ IPPM | 17.9 V at 33.5 A (10/1000 μs) - clamping voltage limits stress on protected ICs during surge events. |
| PPPM | 600 W - peak pulse power handling capability per standard IEC 61000-4-5 surge waveform. |
| ID @ VWM | 2.0 μA - ultra-low reverse leakage preserves efficiency in battery-powered or high-impedance sensing nodes. |
| TJ max | 150 °C - maximum junction temperature enabling operation in under-hood or enclosed industrial enclosures. |
| Package | SMB (DO-214AA) - standardized surface-mount outline with cathode band marking; compatible with automated pick-and-place. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads, UL 94 V-0 rated, M3 suffix indicating halogen-free, RoHS-compliant, industrial-grade construction. Polarity marked by cathode band on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side (e.g., ground or return path) in unidirectional configuration. |
| Cathode (banded end) | Reverse-biased protection terminal | Connected to protected line (e.g., 12 V rail); avalanche conduction occurs when line voltage exceeds VBR relative to anode. |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables precise coordination with system overvoltage thresholds without margin stacking in multi-stage protection schemes. |
| 600 W PPPM (10/1000 μs) | Withstands IEC 61000-4-5 Level 4 surges (4 kV line-earth) on 12 V systems when properly laid out. |
| Low ID = 2.0 μA @ 11 V | Minimizes standby power loss in always-on automotive modules and extends battery life in portable sensors. |
| MSL Level 1 (260 °C peak) | Supports lead-free reflow without preconditioning; eliminates moisture-related popcorning risk during assembly. |
| Halogen-free & RoHS | Meets EU Directive 2011/65/EU and IPC-1752A material declaration requirements for green manufacturing. |
Applications
| Automotive Body Control Module | Industrial PLC Digital Input |
|---|---|
|
Use Scenario: Protecting microcontroller GPIOs and CAN transceiver power pins from load-dump transients and alternator ripple in vehicle door modules. IC Role / Device Role: Unidirectional shunt clamp placed between 12 V supply rail and chassis ground. Use Value: Clamps 12 V rail spikes to ≤17.9 V, preventing latch-up or permanent damage to 5 V tolerant logic inputs downstream. |
Use Scenario: Safeguarding 24 V digital input channels against field-wiring induced surges in factory automation controllers. IC Role / Device Role: Primary front-end transient suppressor on isolated input optocoupler supply side. Use Value: Limits voltage excursion to <18 V during 1 kV/500 A surge events, preserving optocoupler CTR and long-term reliability. |
| Telecom Power Supply Output | Consumer Appliance Motor Driver |
|
Use Scenario: Secondary-side overvoltage protection on +5 V and +3.3 V outputs of AC/DC adapters used in VoIP phones and base stations. IC Role / Device Role: Final-stage rail clamp after DC/DC converters to absorb residual switching noise and lightning-induced coupling. Use Value: Maintains output regulation integrity during 10/1000 μs transients up to 600 W, avoiding brownout resets in sensitive PHY layers. |
Use Scenario: Gate protection for N-channel MOSFETs driving brushed DC motors in smart home appliances (e.g., washing machine control boards). IC Role / Device Role: Bidirectional-capable variant not applicable; SMBJ11D-M3/I used unidirectionally across motor driver high-side FET source-to-ground path. Use Value: Suppresses inductive kickback from motor coil commutation, limiting drain-source voltage overshoot to ≤17.9 V and preventing FET avalanche failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ11A-M3/I | Bidirectional version; symmetric VBR (12.4–13.3 V) in both polarities; same VWM = 11 V, VC = 17.9 V, PPPM = 600 W. | Required where AC-coupled signals or reversible bus lines (e.g., RS-485, USB D+/D−) need protection without polarity assumptions. | Select SMBJ11A-M3/I only if bidirectional clamping is explicitly required; SMBJ11D-M3/I is preferred for DC rails with defined ground reference. |
| SMCJ11A-M3/I | Larger SMC (DO-214AB) package; same electrical specs but higher thermal mass (RθJA = 50 °C/W), 1500 W PPPM rating. | Suitable for higher-energy surge environments (e.g., outdoor telecom cabinets) where PCB space allows larger footprint. | Choose SMCJ11A-M3/I when >600 W surge margin is needed or board layout accommodates 7.11 mm × 6.22 mm vs. SMB's 4.57 mm × 3.94 mm. |
Compared with SMBJ11A-M3/I, SMBJ11D-M3/I provides unidirectional protection with identical clamping performance in a smaller SMB footprint; versus SMCJ11A-M3/I, it trades surge energy headroom for compactness and lower parasitic inductance - critical for high-speed signal line protection.
Availability
SMBJ11D-M3/I is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input protection, and telecom power supply output clamping requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SMBJ11D-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for industrial, automotive, and computing markets.
The SMBJ series is engineered for robust transient suppression in harsh environments - optimized for fast response, tight VBR tolerance, and compatibility with automated SMT assembly processes across consumer, telecom, and transportation sectors.
FAQ
What is the breakdown voltage range of SMBJ11D-M3/I?
The SMBJ11D-M3/I has a guaranteed breakdown voltage (VBR) range of 12.4 V to 13.3 V at test current IT = 1.0 mA, measured per ANSI/IEEE C62.35 standards. This ±3.5 % tolerance ensures consistent turn-on behavior across temperature and production batches, making SMBJ11D-M3/I suitable for precision rail protection where overvoltage margin must be tightly controlled.
How does SMBJ11D-M3/I perform under repeated surge conditions?
SMBJ11D-M3/I is rated for repetitive surge events at 0.01 % duty cycle (1 pulse per 10,000 cycles) with 10/1000 μs waveform. Its thermal resistance (RθJA = 125 °C/W on minimum pad) and 150 °C max junction temperature allow sustained operation when surge intervals permit adequate cooling; for high-frequency transients, derating per Figure 2 in Vishay Doc. 87606 is required.
Can SMBJ11D-M3/I be used in place of a bidirectional TVS like SMBJ11A-M3/I?
No - SMBJ11D-M3/I is unidirectional and lacks symmetrical clamping; substituting it for SMBJ11A-M3/I on AC or floating signal lines risks failure during negative-going transients. SMBJ11D-M3/I must only be used where polarity is fixed (e.g., +12 V rail to ground). For bidirectional protection, SMBJ11A-M3/I or equivalent is mandatory.
What is the maximum clamping voltage of SMBJ11D-M3/I at its rated surge current?
The SMBJ11D-M3/I clamps to a maximum of 17.9 V when subjected to its rated peak pulse current IPPM = 33.5 A (10/1000 μs waveform). This VC value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuitry during worst-case surge events - a key parameter for ensuring downstream ICs remain within absolute maximum ratings.
Does SMBJ11D-M3/I meet automotive qualification standards?
SMBJ11D-M3/I is not AEC-Q200 qualified as a standalone component; however, it is widely deployed in automotive body electronics due to its 150 °C TJ max, M3 halogen-free/RoHS compliance, and robust surge performance. For AEC-Q200-compliant designs, system-level validation per ISO 7637-2 and ISO 16750-2 is required - SMBJ11D-M3/I provides the foundational clamping capability in such validated circuits.
SMBJ11D-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.4V
- Voltage - Clamping (Max) @ Ipp:
- 17.9V
- Current - Peak Pulse (10/1000µs):
- 33.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ11D-M3/I FAQ
1.How can I place an order for SMBJ11D-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ11D-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ11D-M3/I reliable?
The price and inventory of SMBJ11D-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ11D-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ11D-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ11D-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ11D-M3/I?
SMBJ11D-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ11D-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ11D-M3/I?
For technical support, including SMBJ11D-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ11D-M3/I requirements.
6.How does Aetrix verify that SMBJ11D-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ11D-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ11D-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ11D-M3/I?
All SMBJ11D-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ11D-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ11D-M3/I part is unused and in its original packaging.
Return procedure for SMBJ11D-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ11D-M3/I Tags

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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