My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ11HE3/52
;;2.jpg)
- Part No.:
- SMBJ11HE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ11HE3/52.pdf
- Description:
- TVS DIODE 11VWM 20.1VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:8,030
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ11HE3/52 from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 11 V stand-off voltage (VWM), 12.2–13.5 V breakdown voltage (VBR) at 1 mA, 18.2 V maximum clamping voltage (VC) at 33 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial motor drives.
For engineers reviewing the SMBJ11HE3/52 datasheet, SMBJ11HE3/52 pinout, SMBJ11HE3/52 application, or SMBJ11HE3/52 equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a clamping device that remains high-impedance below VWM (11 V) and rapidly transitions to low-impedance conduction above VBR (min. 12.2 V) to limit transient overvoltage. Its glass-passivated junction ensures stable breakdown characteristics and fast response time (<1 ns), critical for suppressing ESD and inductive switching spikes.
The SMBJ11HE3/52 is rated for 600 W peak pulse power (10/1000 µs), supports 100 A non-repetitive forward surge current (8.3 ms half-sine), and exhibits a temperature coefficient of VBR at +0.080 %/°C - enabling predictable performance across -55 °C to +150 °C operating range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 11 V - maximum continuous reverse voltage before significant leakage; defines safe operating margin for 12 V rail protection. |
| VBR (Breakdown Voltage) | 12.2–13.5 V at 1 mA - precise threshold where clamping initiates; ensures reliable turn-on before downstream IC damage. |
| VC (Clamping Voltage) | 18.2 V at IPPM = 33 A - maximum voltage seen by protected circuit during 600 W transient; limits stress on 20 V-rated components. |
| PPPM (Peak Pulse Power) | 600 W (10/1000 µs) - energy-handling capability for common lightning/surge waveforms per IEC 61000-4-5. |
| ID (Reverse Leakage) | 5.0 µA max at VWM - negligible standby current; avoids loading low-power sensor bias networks. |
| TJ max | +150 °C - enables use in under-hood automotive and high-temperature industrial enclosures without derating. |
| AEC-Q101 Qualified | Yes - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD22. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, MSL Level 1 (260 °C reflow peak), UL 94 V-0 molding compound. Cathode indicated by band on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during forward conduction | Connected to lower-potential side (e.g., GND or return path); enables unidirectional clamping from cathode to anode. |
| Cathode | Current exit terminal during reverse-biased clamping | Connected to protected line (e.g., 12 V supply or signal trace); conducts surge current to ground when V > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Handles industry-standard surge events without degradation; supports repeated transients at 0.01% duty cycle. |
| Glass passivated chip junction | Ensures stable VBR tolerance and long-term reliability under thermal cycling and humidity exposure. |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive applications including engine control units and ADAS sensor interfaces. |
| Low profile SMB package | 0.220" × 0.155" footprint enables dense PCB layouts while maintaining thermal performance on 5 mm × 5 mm copper pads. |
| Fast response time (<1 ns) | Clamps transients before sensitive CMOS inputs reach destructive voltage levels. |
Applications
| Automotive Body Control Module | Industrial PLC Digital Input Protection |
|---|---|
Use Scenario: Protecting microcontroller GPIOs and CAN transceiver power rails from load dump and alternator ripple in vehicle body electronics. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between 12 V supply and ground, triggered only during positive overvoltage events. Use Value: Limits voltage to ≤18.2 V during 35 V/100 ms load dump, preventing latch-up or oxide breakdown in 20 V-tolerant MCUs. |
Use Scenario: Safeguarding 24 V digital input channels against field-wiring induced surges and relay coil flyback in factory automation controllers. IC Role / Device Role / Timing Role: Standoff clamp on input front-end, conducting transient energy to chassis ground before optocoupler input stage. Use Value: Maintains <5 µA leakage at 24 V nominal, avoiding false triggering while clamping 600 W spikes within 1 ns. |
| Consumer Appliance Motor Drive Board | Telecom Power Supply EMI Filter Stage |
Use Scenario: Suppressing inductive kickback from brushed DC motor commutation on embedded appliance control boards. IC Role / Device Role / Timing Role: Parallel-connected TVS across motor terminals, shunting flyback energy away from H-bridge MOSFETs. Use Value: Withstands 100 A 8.3 ms surge (IFSM), preventing gate oxide failure and ensuring >100,000-cycle motor reliability. |
Use Scenario: Secondary-side transient suppression on isolated DC/DC converter outputs feeding sensitive RF modules. IC Role / Device Role / Timing Role: Final-stage protector after LC filter, clamping residual ringing and coupling noise on 5–12 V output rails. Use Value: 18.2 V VC ensures downstream LDOs and PLLs remain within absolute maximum ratings during conducted EFT bursts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ11A-E3/52 | Commercial-grade (non-AEC-Q101), same VWM/VBR/VC/PPPM specs, identical SMB package. | Lacks automotive qualification; suitable for consumer/industrial designs without automotive lifecycle requirements. | Select when AEC-Q101 is not mandated and cost optimization is prioritized. |
| SAC11H | Same 11 V VWM but higher 20 V VC at 33 A; 400 W PPPM rating; TO-277 package (3-pin, anode-cathode-anode). | Higher clamping voltage reduces protection margin; TO-277 requires different layout and has higher RθJA (125 °C/W). | Choose only if board space allows TO-277 and system can tolerate 20 V clamping during surge. |
Compared with SMBJ11A-E3/52, the SMBJ11HE3/52 adds AEC-Q101 qualification without sacrificing electrical performance; versus SAC11H, it delivers lower clamping voltage and superior thermal resistance in a standard SMB footprint - making it optimal for automotive and high-reliability industrial designs.
Availability
SMBJ11HE3/52 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input stages, appliance motor drive protection, and telecom power supply filtering requiring stable component supply and AEC-Q101 compliance.
Supply support for SMBJ11HE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific validation.
The SMBJ series is engineered for robust transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where repeatable clamping performance and AEC-Q101 compliance are mandatory.
FAQ
What is the clamping voltage of SMBJ11HE3/52 at its rated peak pulse current?
The SMBJ11HE3/52 has a maximum clamping voltage (VC) of 18.2 V at 33 A peak pulse current (IPPM), measured with a 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuits during surge events and is confirmed in the Vishay datasheet Document Number 88392, page 2.
Is SMBJ11HE3/52 suitable for automotive applications?
Yes, SMBJ11HE3/52 is AEC-Q101 qualified, as indicated by the "HE3" suffix. It undergoes rigorous stress testing including temperature cycling, high-temperature reverse bias, and ESD per JESD22, making it appropriate for under-hood and body-control module applications where reliability is critical.
What is the package type and mounting specification for SMBJ11HE3/52?
SMBJ11HE3/52 uses the SMB (DO-214AA) surface-mount package with matte tin-plated leads. It meets MSL Level 1 per J-STD-020, supports lead-free reflow up to 260 °C peak, and is optimized for automated placement on PCBs with minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal.
How does SMBJ11HE3/52 differ from bidirectional TVS diodes like SMBJ11CA?
SMBJ11HE3/52 is unidirectional and features a cathode band for polarity identification, conducting only during positive overvoltage relative to ground. In contrast, SMBJ11CA is bidirectional with symmetrical clamping in both directions and no polarity marking - making SMBJ11HE3/52 ideal for DC supply rail protection where reverse conduction must be blocked.
What is the maximum operating junction temperature for SMBJ11HE3/52?
The SMBJ11HE3/52 has a maximum junction temperature (TJ max) of +150 °C, allowing operation in high-ambient environments such as engine compartments or enclosed industrial drives. Derating begins above 25 °C ambient per Figure 2 in the datasheet, with RθJA = 100 °C/W typical.
SMBJ11HE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 20.1V
- Current - Peak Pulse (10/1000µs):
- 29.9A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ11HE3/52 FAQ
1.How can I place an order for SMBJ11HE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ11HE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ11HE3/52 reliable?
The price and inventory of SMBJ11HE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ11HE3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ11HE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ11HE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ11HE3/52?
SMBJ11HE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ11HE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ11HE3/52?
For technical support, including SMBJ11HE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ11HE3/52 requirements.
6.How does Aetrix verify that SMBJ11HE3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ11HE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ11HE3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ11HE3/52?
All SMBJ11HE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ11HE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ11HE3/52 part is unused and in its original packaging.
Return procedure for SMBJ11HE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ11HE3/52 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
