Vishay General Semiconductor - Diodes Division SMBJ120A-E3/52
- Part No.:
- SMBJ120A-E3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ120A-E3/52.pdf
- Description:
- TVS DIODE 120VWM 193VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ120A-E3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 120 V stand-off voltage (VWM), 133–147 V breakdown voltage (VBR) at 1 mA, 193 V maximum clamping voltage (VC) at 3.1 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.
For engineers reviewing the SMBJ120A-E3/52 datasheet, SMBJ120A-E3/52 pinout, SMBJ120A-E3/52 application, or SMBJ120A-E3/52 equivalent, this device is selected for robust overvoltage protection where fast response (<1 ps), low clamping ratio (VC/VBR ≈ 1.45), and AEC-Q101 qualification readiness are critical in 120 V DC bus and telecom line protection designs.
Technical Context
This unidirectional TVS operates as a reverse-biased avalanche diode, triggering when reverse voltage exceeds VBR (133–147 V) to clamp transients within nanoseconds. Its glass-passivated junction ensures stable breakdown and low leakage (<1.0 µA at VWM = 120 V), while the 20 °C/W junction-to-lead thermal resistance supports reliable surge dissipation under repetitive 0.01% duty cycle conditions.
The device complies with IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT), and IEC 61000-4-5 (surge) immunity standards when applied with proper PCB layout. Its MSL Level 1 rating (260 °C peak reflow) and matte tin-plated leads meet J-STD-002 solderability requirements for automated SMT assembly.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 120 V - Maximum continuous reverse operating voltage before conduction begins; defines safe operating margin for 120 V DC systems. |
| VBR @ IT = 1 mA | 133–147 V - Verified breakdown range ensuring consistent turn-on across production lots; guarantees clamping starts above system nominal voltage. |
| VC @ IPPM = 3.1 A | 193 V - Clamped voltage during 10/1000 µs surge; limits downstream stress to ≤193 V under 600 W transient event. |
| PPPM | 600 W - Peak pulse power handling per single 10/1000 µs waveform; enables protection against lightning-induced surges in telecom and industrial equipment. |
| IPPM | 3.1 A - Peak surge current capability at rated clamping voltage; determines minimum trace width and PCB copper pad sizing (0.2" × 0.2") required. |
| RθJL | 20 °C/W - Junction-to-lead thermal resistance; supports sustained operation up to TJ = 150 °C with minimal heatsinking in SMB footprint. |
| TJ max. | 150 °C - Maximum junction temperature; allows deployment in high-ambient environments such as enclosed power converters and motor drives. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, cathode-indicated by band marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); RoHS-compliant matte tin-plated leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference | Connected to lower-potential side (e.g., ground or return path); defines polarity-sensitive placement in unidirectional configuration. |
| Cathode | Avalanche conduction terminal | Banded end; connected to protected line (e.g., 120 V rail); conducts surge current to ground when VREV > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables single-device protection against IEC 61000-4-5 Level 4 surges (4 kV line-earth) without external series impedance. |
| 193 V clamping voltage at 3.1 A | Clamping ratio of 1.45 (VC/VBRmin) ensures tight voltage limiting for 120 V systems with <73 V overhead margin. |
| Low incremental surge resistance | Minimizes VC rise under high di/dt events; maintains predictable clamping performance across surge repetition rates. |
| MSL Level 1, 260 °C peak reflow | Supports lead-free reflow without popcorn cracking or delamination; eliminates pre-bake requirement in standard SMT lines. |
| Glass passivated junction | Ensures long-term stability of VBR and leakage current over temperature and life; critical for automotive and industrial field reliability. |
Applications
| Industrial Power Supply Protection | Telecom Line Interface Protection |
|---|---|
Use Scenario: Protecting 120 V DC output rails in switch-mode power supplies against load dump and inductive switching transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between output rail and chassis ground to clamp positive-going surges before they reach downstream regulators and controllers. Use Value: Limits transient voltage to ≤193 V, preventing latch-up or gate oxide damage in 200 V-rated MOSFETs and PMICs on the same rail. |
Use Scenario: Shielding RS-485/RS-422 data lines in base station remote radio units exposed to induced lightning surges. IC Role / Device Role / Timing Role: Paired TVS array (one per line) referenced to local ground, absorbing common-mode surges coupled onto differential pairs. Use Value: Maintains signal integrity by clamping transients within 1 ns, preserving <100 Mbps data rates without bit errors or receiver saturation. |
| MOSFET Gate Driver Protection | Sensor Signal Conditioning Input Protection |
Use Scenario: Safeguarding high-side gate drivers in motor control inverters subjected to shoot-through-induced voltage spikes. IC Role / Device Role / Timing Role: TVS mounted directly at driver IC output pin to shunt gate-source overvoltage before it exceeds ±20 V absolute maximum rating. Use Value: Prevents gate oxide rupture in 650 V SiC MOSFETs by limiting VGS excursion to <±15 V during 100 ns spikes. |
Use Scenario: Protecting analog front-end inputs of pressure/temperature sensors in HVAC control panels from ESD and relay coil flyback. IC Role / Device Role / Timing Role: Low-capacitance TVS (CJ < 100 pF at 0 V) placed before op-amp input to avoid bandwidth degradation. Use Value: Adds <0.5 ns propagation delay while suppressing ±8 kV contact ESD per IEC 61000-4-2 without distorting mV-level sensor signals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ120CA-E3/52 | Bidirectional variant; symmetric VBR = 133–147 V in both polarities; no cathode marking. | Required for AC-coupled or floating signal lines where polarity reversal occurs (e.g., Ethernet PHY interfaces). | Select SMBJ120CA-E3/52 only when bidirectional clamping is mandated; not interchangeable without circuit review. |
| SMCJ120A-E3/52 | Larger SMC (DO-214AB) package; same VWM/VBR, but higher IPPM = 12.3 A and PPPM = 1500 W. | Suitable for higher-energy surge environments (e.g., outdoor PoE injectors) where 600 W is insufficient. | Choose SMCJ120A-E3/52 when board space permits and surge energy exceeds SMBJ120A-E3/52 derating limits. |
Compared with SMBJ120CA-E3/52 and SMCJ120A-E3/52, the SMBJ120A-E3/52 offers optimal balance of compact SMB footprint, 600 W surge rating, and unidirectional precision for 120 V DC protection - making it preferred for space-constrained industrial SMPS and telecom line cards where polarity is fixed and energy levels are moderate.
Availability
SMBJ120A-E3/52 is available at Aetrix Electronics and suitable for industrial power supplies, telecom line interfaces, MOSFET gate driver circuits, and sensor signal conditioning requiring stable component supply and RoHS-compliant sourcing.
Supply support for SMBJ120A-E3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and manufacturability.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for high-reliability transient suppression in automotive, industrial, and communications infrastructure - delivering repeatable clamping performance under harsh electrical stress.
FAQ
What is the maximum clamping voltage of SMBJ120A-E3/52 under a 10/1000 µs surge?
The SMBJ120A-E3/52 has a maximum clamping voltage (VC) of 193 V when subjected to its rated peak pulse current of 3.1 A using the standardized 10/1000 µs waveform. This value is measured per IEC 61000-4-5 test conditions and reflects worst-case clamping performance across temperature and process variation - critical for verifying downstream component voltage margins in 120 V systems.
Is SMBJ120A-E3/52 RoHS-compliant and halogen-free?
Yes, SMBJ120A-E3/52 carries the "E3" suffix, indicating full RoHS compliance per EU Directive 2011/65/EU and exemption 7a. It is not halogen-free; for halogen-free compliance, the "M3" variant (SMBJ120A-M3/52) must be selected. Both variants meet JESD201 Class 2 whisker resistance and UL 94 V-0 flammability requirements.
Can SMBJ120A-E3/52 be used in automotive applications?
SMBJ120A-E3/52 itself is commercial-grade; however, the AEC-Q101 qualified version is designated SMBJ120AHE3_X (e.g., SMBJ120AHE3_B). The "HE3" suffix confirms qualification to AEC-Q101 stress tests including HTGB, HTRB, and temperature cycling - essential for under-hood and infotainment power rail protection where extended lifetime and zero defect rates are mandatory.
What is the thermal resistance from junction to ambient for SMBJ120A-E3/52?
The typical junction-to-ambient thermal resistance (RθJA) of SMBJ120A-E3/52 is 100 °C/W when mounted on the recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes still air and no additional heatsinking; for continuous power dissipation, derating curves in Figure 2 of the datasheet must be applied above 25 °C ambient.
How does the leakage current of SMBJ120A-E3/52 compare at its 120 V stand-off voltage?
At VWM = 120 V and TA = 25 °C, SMBJ120A-E3/52 exhibits a maximum reverse leakage current (ID) of 1.0 µA. This ultra-low leakage ensures negligible standby power loss in always-on 120 V monitoring circuits and prevents false triggering in high-impedance sensor bias networks - a key advantage over older TVS families with >5 µA leakage.
SMBJ120A-E3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 120V
- Voltage - Breakdown (Min):
- 133V
- Voltage - Clamping (Max) @ Ipp:
- 193V
- Current - Peak Pulse (10/1000µs):
- 3.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ120A-E3/52 FAQ
1.How can I place an order for SMBJ120A-E3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ120A-E3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ120A-E3/52 reliable?
The price and inventory of SMBJ120A-E3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ120A-E3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ120A-E3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ120A-E3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ120A-E3/52?
SMBJ120A-E3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ120A-E3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ120A-E3/52?
For technical support, including SMBJ120A-E3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ120A-E3/52 requirements.
6.How does Aetrix verify that SMBJ120A-E3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ120A-E3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ120A-E3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ120A-E3/52?
All SMBJ120A-E3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ120A-E3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ120A-E3/52 part is unused and in its original packaging.
Return procedure for SMBJ120A-E3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ120A-E3/52 Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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