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Vishay General Semiconductor - Diodes Division SMBJ120D-M3/I
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- Part No.:
- SMBJ120D-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ120D-M3/I.pdf
- Description:
- TVS DIODE 120VWM 190VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:8,299
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Product details
Overview
SMBJ120D-M3/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode designed for robust overvoltage protection of DC power rails and signal lines. It features a 120 V stand-off voltage (VWM), 135–145 V breakdown voltage (VBR) at 1 mA, 190 V clamping voltage (VC) at 3.15 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - deployed in industrial motor drives, telecom power supplies, and automotive body control modules.
For engineers reviewing the SMBJ120D-M3/I datasheet, SMBJ120D-M3/I pinout, SMBJ120D-M3/I application, or SMBJ120D-M3/I equivalent, key selection criteria include verified clamping performance under repetitive surge stress, thermal derating behavior on standard PCB pad layouts, M3-grade halogen-free RoHS compliance, and compatibility with automated SMT placement on SMB (DO-214AA) footprint.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds its specified VBR range (135–145 V). Its low incremental surge resistance ensures minimal voltage overshoot during fast transients, while tight ±3.5 % VBR tolerance enables precise coordination with downstream IC overvoltage thresholds.
Designed for operation up to 150 °C junction temperature, it delivers 1.0 W steady-state power dissipation at 25 °C ambient and 5.0 W at 50 °C case temperature when mounted on recommended copper pads. The device meets J-STD-020 MSL Level 1 and passes JESD 201 Class 2 whisker testing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 120 V - maximum continuous reverse operating voltage before significant leakage; sets upper limit for protected circuit DC bias. |
| VBR (Breakdown Voltage) | 135–145 V at 1 mA - guaranteed avalanche initiation window; defines minimum overvoltage threshold for clamping action. |
| VC (Clamping Voltage) | 190 V at IPPM = 3.15 A - peak voltage seen by protected load during 10/1000 μs surge; determines stress on downstream components. |
| PPPM (Peak Pulse Power) | 600 W - maximum non-repetitive surge energy absorption capability; validated per ANSI/IEEE C62.35 10/1000 μs waveform. |
| ID (Reverse Leakage) | ≤ 0.5 μA at VWM - ultra-low standby current minimizes power loss in always-on systems such as battery-backed controllers. |
| RθJA | 125 °C/W - thermal resistance from junction to ambient on standard PCB layout; informs derating requirements above 25 °C ambient. |
| Polarity | Unidirectional - cathode marked by band; blocks forward conduction, clamps only reverse transients - suitable for DC rail protection. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, M3-grade matte tin-plated terminals. Meets UL 94 V-0 flammability rating and JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Surge current sink node | Connected to protected line; conducts avalanche current to ground during overvoltage events - must route with low-inductance path to GND plane. |
| Anode | Reference / return path | Typically tied to system ground or low-impedance return; completes clamping loop - requires solid thermal and electrical connection to minimize VCL rise. |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables predictable, repeatable clamping onset across production lots - critical for coordinating with 120 V-rated MOSFETs or regulators. |
| 600 W peak pulse power (10/1000 μs) | Withstands IEC 61000-4-5 Level 4 surges (4 kV line-earth) without degradation when properly heatsinked on 5 mm × 5 mm copper pad. |
| Low 0.5 μA leakage at 120 V | Permits use in high-impedance sensor bias networks or battery-powered circuits where quiescent current budget is sub-1 μA. |
| MSL Level 1, 260 °C reflow compatible | Supports single-pass lead-free reflow assembly without preconditioning - eliminates moisture-related popcorning risk in manufacturing. |
| M3 suffix qualification | Meets JESD 201 Class 2 whisker resistance - ensures long-term reliability in high-vibration environments like automotive under-hood modules. |
Applications
| Industrial Motor Drives | Telecom DC Power Supplies |
|---|---|
Use Scenario: Protection of 110–125 V DC bus against inductive kickback from contactor switching and lightning-induced surges on outdoor cabinet feeds. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed directly across DC input terminals upstream of bulk capacitors and PFC controller. Use Value: Limits transient voltage to ≤190 V, preventing gate oxide rupture in 150 V-rated SiC MOSFETs and avoiding latch-up in isolated feedback optocouplers. |
Use Scenario: Input-stage surge suppression for -48 V telecom rectifier modules exposed to AC mains coupling and EMP events in central office environments. IC Role / Device Role / Timing Role: Primary-level TVS on DC output rail, coordinated with secondary-side MOVs and gas discharge tubes for multi-stage protection. Use Value: Clamps 6 kV/3 kA combination wave surges within 1 ns response time, maintaining output regulation integrity during 100 ms hold-up intervals. |
| Automotive Body Control Modules | Industrial PLC I/O Cards |
Use Scenario: Protection of LIN bus transceivers and microcontroller GPIOs connected to external sensors in engine bay harnesses subject to load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Localized TVS on each sensor supply line (e.g., 12 V sensor feed), placed adjacent to connector entry point. Use Value: Absorbs 100 A/100 ms load dump energy without thermal runaway, preserving signal integrity for CAN/LIN communication during cold-crank conditions. |
Use Scenario: Field-side protection for 24 V digital input channels receiving signals from proximity switches and solenoid drivers in factory automation cabinets. IC Role / Device Role / Timing Role: Point-of-entry TVS on each channel's 24 V supply line, paired with series current-limiting resistor and Schottky clamp. Use Value: Maintains <1 μA leakage to avoid false triggering of opto-isolated inputs while clamping 1 kV/500 A surge to <200 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ120A-M3/I | Bidirectional variant - symmetrical VBR/VWM (120 V) in both polarities; no polarity marking. | Required for AC-coupled signal lines or full-bridge rectifier outputs where reverse polarity transients occur. | Select SMBJ120A-M3/I only if bidirectional clamping is explicitly needed; SMBJ120D-M3/I provides superior leakage and tighter VBR tolerance for DC rails. |
| SMCJ120A | Larger SMC (DO-214AB) package - higher 1500 W PPPM rating but 2× footprint area and 30 % higher RθJA (160 °C/W). | Suitable for high-energy surge zones (e.g., main AC input) where board space permits larger thermal mass. | Choose SMBJ120D-M3/I for space-constrained 120 V DC rails; select SMCJ120A only when >1000 W surge margin is required and layout allows SMC footprint. |
Compared with SMBJ120A-M3/I, the SMBJ120D-M3/I offers lower leakage and tighter VBR control for DC bias stability; versus SMCJ120A, it trades peak power headroom for compact SMB footprint and better thermal performance per unit area on dense PCBs.
Availability
SMBJ120D-M3/I is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC power supplies, and automotive body control modules requiring stable component supply, M3-grade reliability, and consistent 120 V clamping performance across production batches.
Supply support for SMBJ120D-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for industrial, automotive, and computing markets.
The SMBJ series is engineered for robust transient suppression in harsh environments - optimized for automated SMT assembly, thermal resilience, and precise clamping in DC power and signal line protection applications.
FAQ
What is the maximum clamping voltage of SMBJ120D-M3/I at its rated peak pulse current?
The SMBJ120D-M3/I has a maximum clamping voltage (VC) of 190 V at its rated peak pulse current (IPPM) of 3.15 A, measured using the standardized 10/1000 μs double-exponential surge waveform. This value is guaranteed across the full operating temperature range and defines the worst-case voltage imposed on protected circuitry during surge events.
Does SMBJ120D-M3/I support lead-free reflow soldering?
Yes, SMBJ120D-M3/I is qualified for lead-free reflow soldering per J-STD-020 MSL Level 1, with a maximum peak temperature of 260 °C. Its M3 suffix confirms compliance with JESD 201 Class 2 whisker resistance, making it suitable for high-reliability automated assembly without preconditioning.
How does the 120 V stand-off voltage (VWM) of SMBJ120D-M3/I relate to system operating voltage?
The 120 V VWM of SMBJ120D-M3/I is selected to be ≥10–15 % above nominal DC rail voltage - for example, it protects a 100 V nominal bus while remaining non-conductive during normal operation. This margin prevents leakage-induced heating and ensures reliable clamping only during actual overvoltage events.
Can SMBJ120D-M3/I be used in bidirectional signal protection applications?
No - SMBJ120D-M3/I is unidirectional and clamps only in reverse bias. For bidirectional signal lines (e.g., RS-485, CAN), the bidirectional variant SMBJ120CD-M3/I must be used, which provides symmetrical clamping in both polarities and omits the cathode band marking.
What is the thermal resistance and how does it affect SMBJ120D-M3/I's surge handling capability?
SMBJ120D-M3/I has a typical junction-to-ambient thermal resistance (RθJA) of 125 °C/W on standard PCB layout. This value directly limits its ability to absorb repetitive surges: above 25 °C ambient, its peak pulse power must be derated per Figure 2 in the datasheet to prevent junction temperature exceeding 150 °C.
SMBJ120D-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 120V
- Voltage - Breakdown (Min):
- 135V
- Voltage - Clamping (Max) @ Ipp:
- 190V
- Current - Peak Pulse (10/1000µs):
- 3.15A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ120D-M3/I FAQ
1.How can I place an order for SMBJ120D-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ120D-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ120D-M3/I reliable?
The price and inventory of SMBJ120D-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ120D-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ120D-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ120D-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ120D-M3/I?
SMBJ120D-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ120D-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ120D-M3/I?
For technical support, including SMBJ120D-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ120D-M3/I requirements.
6.How does Aetrix verify that SMBJ120D-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ120D-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ120D-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ120D-M3/I?
All SMBJ120D-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ120D-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ120D-M3/I part is unused and in its original packaging.
Return procedure for SMBJ120D-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ120D-M3/I Tags
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DESD3V3E1BL-7B
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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