Vishay General Semiconductor - Diodes Division SMBJ120-E3/52
- Part No.:
- SMBJ120-E3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ120-E3/52.pdf
- Description:
- TVS DIODE 120VWM 214VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:5,673
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ120-E3/52 from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode designed for robust overvoltage protection in power rails and signal lines. It features a 120 V standoff voltage (VWM), 133–147 V breakdown range (VBR at 1 mA), 193 A peak pulse current (IPPM) under 10/1000 µs waveform, and clamps transients to ≤193 V at rated surge. It is deployed in industrial motor drives to safeguard MOSFET gate drivers against inductive switching spikes.
For engineers reviewing the SMBJ120-E3/52 datasheet, SMBJ120-E3/52 pinout, SMBJ120-E3/52 application, or SMBJ120-E3/52 equivalent, key selection criteria include verified clamping voltage at rated IPPM, thermal resistance (RθJA = 100 °C/W), unidirectional polarity with cathode band marking, and RoHS-compliant SMB (DO-214AA) packaging suitable for automated SMT assembly.
Technical Context
This TVS diode operates as a voltage-clamping device triggered by transient overvoltages exceeding its reverse standoff threshold. Its silicon avalanche junction delivers sub-nanosecond response time and low dynamic impedance during surge events, enabling effective suppression of ESD, lightning-induced surges, and inductive kickback.
The SMBJ120-E3/52 is rated for 600 W peak pulse power (10/1000 µs), 5.0 W steady-state power dissipation at 50 °C, and supports operating junction temperatures from –55 °C to +150 °C. Its unidirectional configuration requires correct anode–cathode orientation relative to protected circuit polarity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 120 V - Maximum continuous reverse voltage before significant leakage; defines upper limit of normal operating rail. |
| VBR (Breakdown Voltage) | 133–147 V at 1 mA - Confirmed avalanche initiation range; ensures reliable triggering above system nominal voltage. |
| VC (Clamping Voltage) | ≤193 V at IPPM = 193 A - Measured maximum voltage seen by protected circuit during full-rated surge event. |
| PPPM (Peak Pulse Power) | 600 W (10/1000 µs) - Surge energy handling capacity; validates suitability for IEC 61000-4-5 Level 3/4 threats. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard 0.2" × 0.2" copper pads; informs board-level thermal design. |
| Package | SMB (DO-214AA) - Surface-mount outline with 5.59 mm max length, 4.06 mm max width, and matte tin-plated leads. |
| Polarity | Unidirectional - Cathode denoted by band; blocks forward conduction until avalanche threshold exceeded in reverse bias. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, two-terminal device with molded epoxy case meeting UL 94 V-0. Cathode identified by molded band; no polarity marking on bidirectional variants.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or lower-potential node; completes current path during clamping. |
| Cathode | High-side connection point | Connected to protected line (e.g., 120 V rail); band-marked terminal accepts transient surge into device. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Validates robustness against high-energy transients per IEC 61000-4-5, including indirect lightning surges. |
| Clamping voltage ≤193 V at 193 A | Ensures downstream components (e.g., MOSFETs, controllers) remain below absolute maximum ratings during surge. |
| MSL Level 1 (260 °C reflow) | Supports lead-free soldering without moisture-related popcorning; eliminates pre-bake requirement for SMT lines. |
| Glass passivated junction | Enhances long-term reliability and stability of breakdown characteristics across temperature and lifetime stress. |
| RoHS-compliant, commercial grade (E3 suffix) | Meets environmental compliance for global commercial electronics; excludes halogenated flame retardants. |
Applications
| Industrial Motor Drives | Telecom Power Supplies |
|---|---|
|
Use Scenario: Protection of gate driver ICs and bootstrap circuits against voltage spikes from IGBT/MOSFET switching in 3-phase inverters. IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between gate driver output and power switch gate. Use Value: Limits gate-source voltage to ≤193 V during 193 A surge, preventing gate oxide rupture and ensuring functional safety compliance. |
Use Scenario: Input-stage surge suppression on 48 V DC telecom rectifier outputs feeding base station control boards. IC Role / Device Role / Timing Role: Primary overvoltage clamp on secondary-side distribution rail upstream of POL converters. Use Value: Clamps induced surges from AC line coupling or hot-swap events to safe levels before reaching sensitive PMICs and FPGAs. |
| Automotive Body Control Modules | Industrial PLC I/O Cards |
|
Use Scenario: Protection of LIN bus transceivers and microcontroller GPIOs against load dump and jump-start transients. IC Role / Device Role / Timing Role: Secondary-level TVS on 12 V supply rail feeding communication ICs. Use Value: Withstands 600 W pulses while maintaining VWM = 120 V margin above 14 V nominal, meeting ISO 7637-2 Pulse 5a requirements. |
Use Scenario: Analog input channel protection on 24 V-powered sensor interface cards exposed to field wiring transients. IC Role / Device Role / Timing Role: Point-of-entry clamping device on signal conditioning front-end before ADC driver stage. Use Value: Limits transient overshoot to <193 V, preserving 24 V signal integrity and preventing latch-up in op-amps and precision references. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ120A-M3/52 | Halogen-free, RoHS-compliant variant; identical electrical specs and SMB package. | No functional difference; selected where halogen-free material compliance is mandated (e.g., EU public infrastructure). | Direct substitution when halogen-free bill-of-materials is required; same layout and thermal performance. |
| SMCJ120A-E3/52 | Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package; RθJA = 50 °C/W vs. 100 °C/W. | Higher power derating capability and improved thermal margin; suited for high-ambient or high-duty-cycle surge environments. | Preferred where board space allows and thermal headroom is critical; requires PCB footprint change. |
Compared with SMBJ120-E3/52, the M3 variant offers identical protection performance with halogen-free construction, while the SMCJ120A-E3/52 provides superior thermal management at the cost of larger footprint-enabling higher sustained surge resilience in thermally constrained designs.
Availability
SMBJ120-E3/52 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive body control modules requiring stable component supply with full traceability and commercial-grade reliability.
Supply support for SMBJ120-E3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability and application-specific optimization.
The SMBJ series targets surface-mount transient suppression in space-constrained, high-reliability systems-designed to replace older axial-leaded TVS devices while maintaining compatibility with automated SMT lines and IPC Class 3 assembly standards.
FAQ
What is the clamping voltage of SMBJ120-E3/52 at its rated peak pulse current?
The SMBJ120-E3/52 has a maximum clamping voltage (VC) of 193 V when subjected to its rated peak pulse current (IPPM) of 193 A under the standardized 10/1000 µs waveform. This value is measured at the device terminals and defines the highest voltage imposed on the protected circuit during full-rated surge conditions, ensuring downstream components remain within safe operating limits.
Is SMBJ120-E3/52 suitable for automotive applications?
The SMBJ120-E3/52 is a commercial-grade part (E3 suffix) and not AEC-Q101 qualified. For automotive use, Vishay specifies the HE3 variant (e.g., SMBJ120AHE3_B/H), which undergoes stress testing per AEC-Q101. The SMBJ120-E3/52 may be used in non-safety-critical aftermarket or industrial vehicle systems, but OEM automotive designs require the HE3 or HM3 qualified versions.
What does the "-E3/52" suffix indicate in SMBJ120-E3/52?
The "E3" denotes RoHS-compliant, commercial-grade construction with matte tin-plated leads; "/52" specifies packaging in 7-inch plastic tape-and-reel format with 750 units per reel. This ordering code confirms compliance with JEDEC J-STD-020 MSL Level 1 and JESD 201 Class 2 whisker resistance, making SMBJ120-E3/52 compatible with standard lead-free reflow processes.
How does SMBJ120-E3/52 differ from bidirectional TVS diodes like SMBJ120CA?
The SMBJ120-E3/52 is unidirectional and conducts only in reverse breakdown, requiring correct polarity placement with cathode toward the protected line. In contrast, SMBJ120CA is bidirectional and symmetrical-offering identical clamping in both directions, ideal for AC lines or differential buses. The SMBJ120-E3/52 provides lower leakage and tighter VBR tolerance in DC applications where polarity is fixed.
What is the thermal resistance and maximum junction temperature of SMBJ120-E3/52?
The SMBJ120-E3/52 has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" copper pads per JEDEC standards, and a maximum operating junction temperature (TJ max.) of +150 °C. These values define its power derating curve above 25 °C ambient and confirm suitability for enclosed industrial enclosures with moderate airflow.
SMBJ120-E3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 120V
- Voltage - Breakdown (Min):
- 133V
- Voltage - Clamping (Max) @ Ipp:
- 214V
- Current - Peak Pulse (10/1000µs):
- 2.8A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ120-E3/52 FAQ
1.How can I place an order for SMBJ120-E3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ120-E3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ120-E3/52 reliable?
The price and inventory of SMBJ120-E3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ120-E3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ120-E3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ120-E3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ120-E3/52?
SMBJ120-E3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ120-E3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ120-E3/52?
For technical support, including SMBJ120-E3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ120-E3/52 requirements.
6.How does Aetrix verify that SMBJ120-E3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ120-E3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ120-E3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ120-E3/52?
All SMBJ120-E3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ120-E3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ120-E3/52 part is unused and in its original packaging.
Return procedure for SMBJ120-E3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ120-E3/52 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)