Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ120HE3/5B

Part No.:
SMBJ120HE3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ120HE3/5B.pdf
Description:
TVS DIODE 120VWM 214VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,943

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ120HE3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode designed for robust overvoltage protection in power rails and signal lines. It features a 120 V standoff voltage (VWM), 133–147 V breakdown range (VBR) at 1 mA, 193 A peak pulse current (IPPM) under 10/1000 µs waveform, and clamps transients to ≤193 V at rated surge. It is used to protect MOSFETs, ICs, and sensor interfaces in industrial motor drives and telecom power supplies.

For engineers reviewing the SMBJ120HE3/5B datasheet, SMBJ120HE3/5B pinout, SMBJ120HE3/5B application, or SMBJ120HE3/5B equivalent, key selection criteria include its AEC-Q101 qualification status, 600 W peak pulse power rating, low clamping ratio (VC/VBR ≈ 1.45), and SMB (DO-214AA) package compatibility with automated SMT assembly.

Technical Context

This TVS diode operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds its specified breakdown threshold. Its glass-passivated junction ensures stable leakage performance and fast response (<1 ns), while the low incremental surge resistance (≈0.3 Ω derived from VC/IPPM) enables effective energy diversion during ESD or lightning-induced surges.

The device is rated for 150 °C maximum junction temperature and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. Its 100 °C/W junction-to-ambient thermal resistance requires appropriate PCB copper pad area (0.2" × 0.2") for sustained 5.0 W power dissipation.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 120 V - Maximum continuous reverse operating voltage before conduction begins; defines safe working margin below breakdown.
VBR min/max 133 V / 147 V at 1 mA - Confirmed breakdown range ensuring predictable turn-on across production lot and temperature.
VC @ IPPM 193 V at 193 A - Clamping voltage under full-rated 10/1000 µs surge; determines maximum stress imposed on protected circuitry.
PPPM 600 W - Peak pulse power handling capability; validates suitability for IEC 61000-4-5 Level 4 (4 kV) surge testing.
ID @ VWM 1.0 µA - Reverse leakage at standoff voltage; low value minimizes standby power loss and avoids false triggering.
TJ max 150 °C - Maximum junction temperature; supports operation in high-ambient environments like enclosed industrial enclosures.
Package SMB (DO-214AA) - Standardized surface-mount outline with 2.2 mm profile; compatible with JEDEC-standard pick-and-place and reflow profiles.

Pinout & Package

Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads; cathode indicated by band marking on one end.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal Connected to lower-potential side (e.g., ground or return path); conducts during forward-biased surge events (e.g., reverse polarity protection).
Cathode Reverse-biased clamping terminal Connected to protected line (e.g., +120 V rail); avalanche conduction initiates here when transient exceeds VBR.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - suitable for under-hood and infotainment power rails.
600 W peak pulse power Withstands 10/1000 µs surges up to 193 A without degradation - meets IEC 61000-4-5 surge immunity requirements for industrial equipment.
Low clamping ratio (VC/VBR ≈ 1.45) Minimizes overvoltage overshoot during clamping - reduces stress on downstream MOSFET gate oxides and IC input structures.
MSL Level 1 moisture sensitivity Enables standard SMT reflow without baking - eliminates pre-conditioning steps and supports just-in-time manufacturing flow.
Glass passivated junction Ensures stable leakage and breakdown characteristics over time and temperature - critical for long-life deployments in telecom infrastructure.

Applications

Industrial Motor Drives Telecom Power Supplies

Use Scenario: Protection of IGBT gate drivers and DC bus sensing circuits against switching-induced transients.

IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed across gate-source or supply-rail inputs to limit voltage excursions.

Use Value: Prevents gate oxide rupture and false triggering by clamping spikes to ≤193 V while maintaining 120 V system operating margin.

Use Scenario: Input-stage surge suppression on -48 V or +54 V telecom rectifier outputs exposed to lightning-induced surges.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on secondary-side DC distribution lines feeding PoE controllers and line cards.

Use Value: Absorbs 600 W surge energy without failure, preserving downstream DC-DC converter integrity and meeting GR-1089-CORE compliance.

Automotive Body Control Modules Industrial Sensor Interfaces

Use Scenario: Protection of LIN/CAN transceiver power pins and microcontroller I/O against load dump and jump-start transients.

IC Role / Device Role / Timing Role: Unidirectional TVS on 12 V supply rail upstream of LDO regulators feeding MCU peripherals.

Use Value: AEC-Q101 qualification ensures survivability through 12 V battery system transients up to ISO 7637-2 Pulse 5a (110 V, 400 ms).

Use Scenario: Shielding analog front-ends of pressure/temperature sensors in factory automation PLC modules from EFT and ESD coupling.

IC Role / Device Role / Timing Role: Low-leakage (1.0 µA) TVS on 24 V sensor excitation lines and differential signal pairs.

Use Value: Maintains signal integrity with negligible offset error while suppressing 4 kV contact ESD per IEC 61000-4-2.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ120A-E3/5B Commercial-grade (non-AEC-Q101); identical electrical specs and SMB package. Lacks automotive qualification; not approved for use in safety-critical vehicle subsystems. Select when cost-sensitive industrial or consumer designs do not require automotive reliability validation.
SMCJ120AHE3/5B Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package; 1500 W PPPM rating. Higher surge capacity suits higher-energy threat environments (e.g., outdoor telecom cabinets). Choose when system-level surge testing exceeds 600 W or board layout allows larger footprint for enhanced margin.

Compared with SMBJ120HE3/5B, SMBJ120A-E3/5B offers identical protection performance at lower cost but no automotive qualification, while SMCJ120AHE3/5B delivers 2.5× higher surge energy handling in a physically larger package - enabling design flexibility across reliability tiers and threat levels.

Availability

SMBJ120HE3/5B is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive body control modules requiring stable component supply with AEC-Q101 assurance and consistent SMB package form factor.

Supply support for SMBJ120HE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.

The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered for high-energy transient suppression in harsh environments - targeting industrial, automotive, and telecom infrastructure where robustness and qualification compliance are mandatory.

FAQ

What is the maximum clamping voltage of SMBJ120HE3/5B under rated surge conditions?

The SMBJ120HE3/5B clamps to a maximum of 193 V when subjected to its rated 193 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured at the device terminals and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring downstream components remain within their absolute maximum ratings.

Is SMBJ120HE3/5B suitable for automotive applications?

Yes, SMBJ120HE3/5B is AEC-Q101 qualified, meaning it has passed rigorous stress tests including temperature cycling, high-temperature reverse bias, and ESD - making it suitable for automotive body control modules, infotainment power rails, and other non-safety-critical vehicle systems. Its HE3 suffix explicitly denotes this qualification level.

What does the "5B" in SMBJ120HE3/5B indicate?

The "5B" suffix in SMBJ120HE3/5B specifies the packaging configuration: 13-inch diameter plastic tape and reel, with a base quantity of 3200 units per reel. This format is optimized for high-volume SMT assembly lines and ensures consistent feed reliability in automated placement equipment.

How does SMBJ120HE3/5B differ from bidirectional TVS diodes like SMBJ120CA?

SMBJ120HE3/5B is unidirectional and functions only in reverse-bias clamping mode, with polarity marked by a cathode band. In contrast, SMBJ120CA is bidirectional and suppresses transients in both directions - making it suitable for AC lines or differential data signals. The unidirectional SMBJ120HE3/5B offers lower leakage and tighter VBR tolerance for DC rail protection.

What PCB layout considerations apply to SMBJ120HE3/5B for optimal thermal performance?

For reliable 5.0 W steady-state power dissipation, SMBJ120HE3/5B must be mounted on minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, per Vishay's recommended pad layout. Reduced copper area increases junction temperature and derates surge capability - especially critical in enclosed industrial enclosures operating near 100 °C ambient.

SMBJ120HE3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
120V
Voltage - Breakdown (Min):
133V
Voltage - Clamping (Max) @ Ipp:
214V
Current - Peak Pulse (10/1000µs):
2.8A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ120HE3/5B FAQ

1.How can I place an order for SMBJ120HE3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ120HE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ120HE3/5B reliable?

The price and inventory of SMBJ120HE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ120HE3/5B is usually 5 days.

3.What payment methods are accepted for SMBJ120HE3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ120HE3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ120HE3/5B?

SMBJ120HE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ120HE3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ120HE3/5B?

For technical support, including SMBJ120HE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ120HE3/5B requirements.

6.How does Aetrix verify that SMBJ120HE3/5B is sourced from the original manufacturer or authorized distributors?

All SMBJ120HE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ120HE3/5B meets industry standards.

7.What is the process for return or replacement of SMBJ120HE3/5B?

All SMBJ120HE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ120HE3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ120HE3/5B part is unused and in its original packaging.

Return procedure for SMBJ120HE3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ120HE3/5B Tags

  • SMBJ120HE3/5B
  • SMBJ120HE3/5B PDF
  • SMBJ120HE3/5B Datasheet
  • SMBJ120HE3/5B Specifications
  • SMBJ120HE3/5B Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ120HE3/5B
  • Buy SMBJ120HE3/5B
  • SMBJ120HE3/5B Price
  • SMBJ120HE3/5B Distributor
  • SMBJ120HE3/5B Supplier
  • SMBJ120HE3/5B Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER