Vishay General Semiconductor - Diodes Division SMBJ12AHE3/5B
- Part No.:
- SMBJ12AHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ12AHE3/5B.pdf
- Description:
- TVS DIODE 12VWM 19.9VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ12AHE3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping inductive switching transients and ESD events on power rails and signal lines. It features 12 V stand-off voltage (VWM), 13.3–14.7 V breakdown voltage (VBR) at 1 mA, 19.9 V maximum clamping voltage (VC) at 30.2 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 μs waveform). It is AEC-Q101 qualified and used in automotive power supply protection.
For engineers reviewing the SMBJ12AHE3/5B datasheet, SMBJ12AHE3/5B pinout, SMBJ12AHE3/5B application, or SMBJ12AHE3/5B equivalent, key selection criteria include clamping voltage margin relative to protected IC VDD, surge current capability under IEC 61000-4-5 Level 3/4, thermal derating above 25 °C, and AEC-Q101 qualification status for automotive deployment.
Technical Context
This TVS operates as a unidirectional avalanche diode with cathode-banded polarity, activated when reverse voltage exceeds its breakdown threshold. Its low incremental surge resistance ensures minimal voltage overshoot during fast transients, and its glass-passivated junction enables stable performance across temperature and life cycles.
The device complies with IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT), and IEC 61000-4-5 (surge) immunity standards when applied with proper PCB layout-specifically using minimum 5.0 mm × 5.0 mm copper pads per terminal and minimizing trace inductance between protected node and TVS cathode/anode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12 V - Maximum continuous reverse operating voltage before significant leakage; sets upper limit for protected rail voltage. |
| VBR (min/max) | 13.3 V / 14.7 V at IT = 1 mA - Confirmed breakdown range defining turn-on threshold; ensures reliable triggering above VWM. |
| VC @ IPPM | 19.9 V at 30.2 A (10/1000 μs) - Clamped voltage seen by downstream circuit during worst-case surge; must stay below IC absolute max rating. |
| PPPM | 600 W - Peak transient energy absorption capacity; validates compliance with IEC 61000-4-5 Level 3 (1 kV/2 kV line-earth). |
| ID @ VWM | 5.0 μA max - Reverse leakage at stand-off voltage; low value minimizes standby power loss in battery-powered systems. |
| TJ max | +150 °C - Maximum junction temperature; supports operation in under-hood automotive environments with proper thermal design. |
| Package | SMB (DO-214AA) - Standardized surface-mount outline with 2.20 mm lead spacing; compatible with automated pick-and-place and reflow. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads, MSL Level 1 (260 °C peak reflow), RoHS-compliant and AEC-Q101 qualified. Cathode identified by band marking on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or low-impedance return path; forms current loop during clamping event. |
| Cathode | High-side connection point | Connected to protected line (e.g., 12 V rail); conducts avalanche current when overvoltage occurs. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD stress-enables use in engine control units and ADAS power supplies. |
| 600 W peak pulse power (10/1000 μs) | Supports robust protection against ISO 7637-2 Pulse 1/2a/3a and IEC 61000-4-5 surges without degradation over rated lifetime. |
| 19.9 V clamping voltage at 30.2 A | Provides ≥2.1 V margin below typical 22 V absolute maximum rating of 12 V automotive microcontrollers and CAN transceivers. |
| Glass-passivated junction | Ensures stable VBR and low leakage over 15-year service life in high-humidity and thermal-cycling environments. |
| MSL Level 1 moisture sensitivity | Permits unlimited floor life and standard reflow profile (J-STD-020), eliminating bake requirements prior to assembly. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Clamp |
|---|---|
Use Scenario: 12 V battery-supplied ECUs exposed to load dump (ISO 7637-2 Pulse 5a) and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VBAT input and chassis ground to clamp transients before LDO or DC/DC converter. Use Value: Limits peak voltage to 19.9 V, preventing latch-up or gate oxide damage in downstream PMICs and microcontrollers. |
Use Scenario: Analog output lines (e.g., 4–20 mA current loop) in factory automation sensors subjected to ESD and cable discharge. IC Role / Device Role / Timing Role: TVS mounted at connector interface to shunt fast transients (<1 ns rise time) before signal conditioning amplifier. Use Value: Sub-20 ns response time and 19.9 V clamping protect precision op-amps with ±15 V supply rails from destructive overvoltage. |
| Telecom DC Power Input Protection | Consumer USB Port Surge Suppression |
Use Scenario: -48 V telecom rectifier outputs feeding backplane distribution, vulnerable to lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS installed on -48 V rail with cathode tied to -48 V and anode to ground reference. Use Value: Withstands repetitive 600 W pulses at 0.01% duty cycle, enabling long-term reliability in central office equipment. |
Use Scenario: VBUS line in USB 2.0 host ports exposed to human-body-model ESD (±8 kV contact) during plug insertion. IC Role / Device Role / Timing Role: TVS placed directly at USB Type-A receptacle, cathode to VBUS, anode to GND, with <1 nH layout inductance. Use Value: 5.0 μA max leakage at 12 V ensures no impact on USB suspend current budget; 19.9 V clamping protects USB controller VDDIO. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ12AHM3/5B | Halogen-free variant with identical electrical specs and AEC-Q101 qualification; same SMB package and pinout. | No functional difference; selected where halogen-free compliance is mandated by OEM environmental policy. | Direct material substitution when halogen-free bill-of-materials is required; no redesign needed. |
| SMCJ12AHE3/5B | Same VWM/VBR/VC specs but in larger SMC (DO-214AB) package; higher thermal mass (RθJA = 50 °C/W vs. 100 °C/W). | Better sustained surge handling in high-temperature enclosures (>85 °C ambient); requires larger PCB footprint. | Choose when thermal derating at elevated ambient or repeated surge exposure demands lower junction temperature rise. |
Compared with SMBJ12AHE3/5B, SMBJ12AHM3/5B offers identical protection performance with halogen-free construction, while SMCJ12AHE3/5B trades smaller footprint for superior thermal dissipation-making it preferable in thermally constrained but space-tolerant designs.
Availability
SMBJ12AHE3/5B is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, telecom power inputs, and consumer USB port protection requiring stable component supply and AEC-Q101 assurance.
Supply support for SMBJ12AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series targets board-level transient suppression in automotive, industrial, and communications systems, with design focus on fast response, repeatable clamping, and qualification to stringent automotive reliability standards.
FAQ
What is the maximum clamping voltage of SMBJ12AHE3/5B under IEC 61000-4-5 surge conditions?
The SMBJ12AHE3/5B has a maximum clamping voltage (VC) of 19.9 V at 30.2 A peak pulse current with a 10/1000 μs waveform. This value is measured per standardized test conditions and defines the highest voltage imposed on the protected circuit during a full-rated surge event. Designers must verify that this clamped level remains below the absolute maximum voltage rating of downstream ICs. The SMBJ12AHE3/5B maintains this performance across its qualified operating temperature range.
Is SMBJ12AHE3/5B suitable for protecting CAN bus lines?
No-SMBJ12AHE3/5B is not recommended for direct CAN bus line protection due to its 19.9 V clamping voltage, which exceeds the typical 5 V or 3.3 V common-mode tolerance of CAN transceivers. For CAN FD or classical CAN, lower-clamp devices such as SMAJ5.0A or dedicated bidirectional TVS arrays (e.g., D3V3F4U65-7) are appropriate. The SMBJ12AHE3/5B is intended for 12 V power rail or high-voltage analog signal protection, not data-line ESD suppression.
Does SMBJ12AHE3/5B require a heatsink for standard operation?
No external heatsink is required for SMBJ12AHE3/5B under single-event surge conditions, as its 600 W rating applies to non-repetitive pulses. However, thermal design must account for RθJA = 100 °C/W: at 5.0 W steady-state power dissipation (e.g., from leakage or frequent surges), junction temperature rise would exceed safe limits. In practice, SMBJ12AHE3/5B relies on PCB copper area (minimum 5.0 mm × 5.0 mm per pad) for transient thermal sinking-not continuous conduction cooling.
How does the HE3 suffix affect the specifications of SMBJ12AHE3/5B?
HE3 denotes RoHS-compliant construction with AEC-Q101 qualification-no change to electrical parameters, package dimensions, or pinout. The HE3 suffix confirms that SMBJ12AHE3/5B meets automotive reliability testing (including temperature cycling, HTRB, and ESD), while maintaining the same 12 V VWM, 19.9 V VC, and 600 W PPPM as non-automotive variants. It is functionally identical to SMBJ12A-E3 except for qualification scope and material compliance.
Can SMBJ12AHE3/5B be used in bidirectional configurations?
No-SMBJ12AHE3/5B is a unidirectional TVS diode, identifiable by its cathode band marking. Bidirectional operation requires the CA suffix (e.g., SMBJ12CA). Using SMBJ12AHE3/5B in reverse-biased configurations risks permanent failure during positive transients on the anode side. For AC-coupled or symmetrical surge protection, only explicitly marked bidirectional parts like SMBJ12CA should be selected.
SMBJ12AHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 19.9V
- Current - Peak Pulse (10/1000µs):
- 30.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ12AHE3/5B FAQ
1.How can I place an order for SMBJ12AHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ12AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ12AHE3/5B reliable?
The price and inventory of SMBJ12AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ12AHE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ12AHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ12AHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ12AHE3/5B?
SMBJ12AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ12AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ12AHE3/5B?
For technical support, including SMBJ12AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ12AHE3/5B requirements.
6.How does Aetrix verify that SMBJ12AHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ12AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ12AHE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ12AHE3/5B?
All SMBJ12AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ12AHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ12AHE3/5B part is unused and in its original packaging.
Return procedure for SMBJ12AHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ12AHE3/5B Tags

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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