Vishay General Semiconductor - Diodes Division SMBJ12AHE3_B/I
- Part No.:
- SMBJ12AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ12AHE3_B/I.pdf
- Description:
- 600W,12V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:2,089
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Product details
Overview
SMBJ12AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed to protect sensitive electronics against voltage transients induced by inductive load switching and lightning surges. It features a 12 V stand-off voltage (VWM), 13.3–14.7 V breakdown voltage (VBR) at 1 mA, 19.9 V maximum clamping voltage (VC) at 30.2 A peak pulse current (IPPM), and 600 W peak pulse power (PPPM) with 10/1000 µs waveform - deployed on ICs, MOSFETs, and sensor signal lines in industrial and telecom systems.
For engineers reviewing the SMBJ12AHE3_B/I datasheet, SMBJ12AHE3_B/I pinout, SMBJ12AHE3_B/I application, or SMBJ12AHE3_B/I equivalent, this device is selected for robust overvoltage protection where fast response time (<1 ns), low incremental surge resistance, and AEC-Q101 qualification (via HE3 suffix) are critical - especially in automotive-grade power rail and interface line protection.
Technical Context
This TVS diode operates as a unidirectional clamping device: reverse-biased during normal operation, it remains high-impedance until transient voltage exceeds VBR, then rapidly switches to low-impedance conduction to clamp the line at VC. Its glass-passivated junction ensures stable breakdown characteristics and long-term reliability under repetitive surge stress.
The SMBJ12AHE3_B/I is rated for 150 °C maximum junction temperature, exhibits 0.083 %/°C temperature coefficient of VBR, and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak - confirming suitability for automated SMT assembly without moisture sensitivity concerns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12 V - Maximum continuous reverse operating voltage before clamping begins; defines safe working range for protected circuit. |
| VBR (min/max) | 13.3 V / 14.7 V at 1 mA - Confirmed breakdown threshold range; ensures reliable triggering above VWM with margin. |
| VC @ IPPM | 19.9 V at 30.2 A - Clamped voltage during 600 W transient; limits downstream voltage stress to safe levels. |
| PPPM | 600 W (10/1000 µs) - Peak surge energy handling capacity; supports IEC 61000-4-5 Level 4 compliance when properly laid out. |
| ID @ VWM | 5.0 µA max - Low leakage at stand-off voltage; minimizes quiescent power loss and avoids false triggering. |
| TJ max. | +150 °C - Enables operation in under-hood automotive or high-ambient industrial environments. |
| Package | SMB (DO-214AA) - Standardized 2-pin surface-mount outline with 5.21 mm × 4.06 mm footprint and 2.20 mm height; compatible with JEDEC MS-012AC. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads; polarity indicated by cathode band on one end. Mounting requires 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal per Vishay recommended layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry (unidirectional) | Connected to ground or lower-potential node; completes clamping path during transient. |
| Cathode | Reverse-biased terminal (marked with band) | Connected to protected line; conducts only when line voltage exceeds VBR relative to anode. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units and body electronics - confirmed via HE3 suffix and Vishay documentation. |
| 600 W peak pulse power | Withstands 10/1000 µs surges up to 30.2 A without degradation - sufficient for IEC 61000-4-5 4th-level testing with proper PCB layout. |
| Glass passivated junction | Ensures stable VBR tolerance and low leakage over temperature and lifetime - critical for long-term field reliability. |
| MSL Level 1 rating | Zero floor life limitation; supports standard reflow profiles up to 260 °C peak - eliminates baking requirements pre-assembly. |
| Low clamping ratio (VC/VBR ≈ 1.42) | Minimizes overvoltage overshoot during clamping - protects 12 V logic interfaces and gate drivers more effectively than higher-ratio TVS devices. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-supplied ECUs from load dump and alternator transients. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between power rail and chassis ground. Use Value: Limits transient voltage to ≤19.9 V, preventing damage to 36 V-rated DC-DC converters and microcontrollers. |
Use Scenario: Shielding analog output lines of pressure/temperature sensors in factory automation PLCs. IC Role / Device Role / Timing Role: Point-of-entry TVS on 4–20 mA or 0–10 V signal traces near connector. Use Value: Sub-1 ns response clamps ESD and inductive kickback before reaching precision ADC front-end stages. |
| Telecom Interface Protection | Consumer Device USB/Power Port Protection |
|
Use Scenario: Safeguarding RS-485 transceivers in base station backhaul equipment exposed to lightning-induced surges. IC Role / Device Role / Timing Role: Bidirectional-capable design variant not applicable; SMBJ12AHE3_B/I used on single-ended bias rails feeding transceiver VCC. Use Value: 600 W rating handles coupled surges from adjacent data lines without thermal runaway. |
Use Scenario: Overvoltage suppression on 5 V USB VBUS lines in smart home hubs during hot-plug or adapter fault events. IC Role / Device Role / Timing Role: Primary clamping device between upstream power source and USB controller's input capacitor. Use Value: 12 V VWM aligns with 5 V system margin; 19.9 V VC prevents latch-up in USB PHY ICs rated to 20 V absolute max. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ12AHM3_B/I | Halogen-free, RoHS-compliant, AEC-Q101 qualified - identical electrical specs but different material composition. | No functional difference; selected when halogen-free compliance is mandated by OEM environmental policy. | Direct material substitution where halogen content restrictions apply; same footprint and solder profile. |
| SMBJ12A-E3/5B | Commercial-grade (non-AEC-Q101), same VWM/VBR/VC/PPPM, packaged in 13" reel (3200 pcs) - differs only in qualification and marking. | Not approved for automotive use; suitable for industrial/commercial designs without automotive qualification requirements. | Cost-optimized alternative for non-automotive applications; no layout or schematic change required. |
Compared with SMBJ12AHE3_B/I, SMBJ12AHM3_B/I offers identical performance with halogen-free construction, while SMBJ12A-E3/5B provides equal electrical protection without AEC-Q101 validation - enabling qualification-tiered sourcing across automotive and industrial programs.
Availability
SMBJ12AHE3_B/I is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and telecom infrastructure requiring stable component supply with AEC-Q101 assurance and full traceability.
Supply support for SMBJ12AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where robustness, AEC-Q101 compliance, and repeatable clamping performance are mandatory.
FAQ
What is the clamping voltage of SMBJ12AHE3_B/I under maximum rated surge current?
The SMBJ12AHE3_B/I has a maximum clamping voltage (VC) of 19.9 V at 30.2 A peak pulse current (IPPM), measured with a 10/1000 µs waveform. This value defines the upper voltage limit imposed on the protected circuit during worst-case transient events and is critical for ensuring downstream components remain within their absolute maximum ratings. The SMBJ12AHE3_B/I maintains this clamping performance across its qualified temperature range.
Is SMBJ12AHE3_B/I suitable for automotive applications?
Yes, SMBJ12AHE3_B/I is AEC-Q101 qualified, as confirmed by the "HE3" suffix and Vishay's official documentation. It is rated for operation from –55 °C to +150 °C junction temperature and meets MSL Level 1 for lead-free reflow, making it appropriate for under-hood and body-control module applications. The SMBJ12AHE3_B/I undergoes stress testing per AEC-Q101 requirements including HTRB, HTGB, and temperature cycling.
What does the "B/I" suffix mean in SMBJ12AHE3_B/I?
The "B/I" suffix in SMBJ12AHE3_B/I indicates packaging configuration: "B" denotes the revision level (Revision B per Vishay's ordering nomenclature), and "I" specifies 13-inch diameter tape-and-reel packaging containing 3200 units. This format supports high-volume SMT placement and is distinct from the "H" variant (7-inch reel, 750 units). The SMBJ12AHE3_B/I retains all electrical and qualification attributes of the base SMBJ12AHE3 part.
How does SMBJ12AHE3_B/I compare to bidirectional TVS diodes like SMBJ12CA?
SMBJ12AHE3_B/I is unidirectional and intended for DC line protection where polarity is fixed (e.g., 12 V supply rails), whereas SMBJ12CA is bidirectional and suited for AC or floating signal lines. The SMBJ12AHE3_B/I has asymmetric conduction - blocking forward current beyond VF ≈ 3.5 V - while SMBJ12CA clamps equally in both directions. Their VWM, VBR, and VC values differ accordingly; SMBJ12AHE3_B/I is not interchangeable with SMBJ12CA without circuit review.
What is the thermal resistance of SMBJ12AHE3_B/I, and how does it affect power dissipation?
The SMBJ12AHE3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on minimum recommended pad layout (0.2" × 0.2" copper pads), and 20 °C/W junction-to-lead (RθJL). At 25 °C ambient, its steady-state power dissipation (PD) is rated at 5.0 W; derating applies above 25 °C per Vishay's fig. 2. These values determine safe continuous power handling and transient thermal recovery - critical when sizing PCB copper area for repeated surge events. The SMBJ12AHE3_B/I relies on lead conduction for most heat transfer.
SMBJ12AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 19.9V
- Current - Peak Pulse (10/1000µs):
- 30.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ12AHE3_B/I FAQ
1.How can I place an order for SMBJ12AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ12AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ12AHE3_B/I reliable?
The price and inventory of SMBJ12AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ12AHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ12AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ12AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ12AHE3_B/I?
SMBJ12AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ12AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ12AHE3_B/I?
For technical support, including SMBJ12AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ12AHE3_B/I requirements.
6.How does Aetrix verify that SMBJ12AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ12AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ12AHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ12AHE3_B/I?
All SMBJ12AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ12AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ12AHE3_B/I part is unused and in its original packaging.
Return procedure for SMBJ12AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ12AHE3_B/I Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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