Vishay General Semiconductor - Diodes Division SMBJ12AHM3_B/I
- Part No.:
- SMBJ12AHM3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ12AHM3_B/I.pdf
- Description:
- 600W,12V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ12AHM3_B/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features 12 V stand-off voltage (VWM), 13.3–14.7 V breakdown voltage (VBR) at 1 mA, 19.9 V maximum clamping voltage (VC) at 30.2 A peak pulse current (IPPM), and 600 W peak pulse power (PPPM) with 10/1000 µs waveform - deployed on power rails and signal lines in industrial sensor interfaces.
For engineers reviewing the SMBJ12AHM3_B/I datasheet, SMBJ12AHM3_B/I pinout, SMBJ12AHM3_B/I application, or SMBJ12AHM3_B/I equivalent, this page delivers verified electrical specs, thermal behavior, AEC-Q101 qualification status, clamping performance under surge conditions, and direct replacement guidance for automotive and industrial circuit protection design.
Technical Context
This TVS diode operates as a unidirectional clamping device: reverse-biased during normal operation with ≤5.0 µA leakage at 12 V, then rapidly avalanches when transient voltage exceeds VBR to limit downstream voltage to ≤19.9 V. Its glass-passivated junction ensures stable breakdown and low incremental surge resistance.
Designed for automated SMT assembly, it meets J-STD-020 MSL Level 1 (peak reflow 260 °C), has matte tin-plated leads, and supports repetitive surge duty cycle of 0.01 % - enabling reliable protection in high-reliability power supply inputs and I/O ports subject to inductive switching transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12 V - maximum continuous reverse operating voltage before clamping begins; defines safe operating margin for 12 V DC systems. |
| VBR min/max | 13.3 V / 14.7 V at IT = 1 mA - guaranteed avalanche initiation window; ensures consistent turn-on across temperature and unit variation. |
| VC @ IPPM | 19.9 V at 30.2 A - clamped voltage during 10/1000 µs surge; limits stress on downstream ICs like microcontrollers or RS-485 transceivers. |
| PPPM | 600 W - peak pulse power handling per JEDEC standard; sustains single-event surges without degradation under defined waveform. |
| ID @ VWM | ≤5.0 µA - ultra-low reverse leakage at rated stand-off; minimizes standby power loss in battery-powered sensor nodes. |
| TJ max | +150 °C - maximum junction temperature; enables deployment in under-hood automotive environments and industrial enclosures. |
| RθJA | 100 °C/W - thermal resistance junction-to-ambient on standard 0.2" × 0.2" copper pads; informs PCB thermal layout requirements. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, AEC-Q101 qualified. Cathode indicated by band marking; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink node | Connected to protected line (e.g., 12 V rail); conducts surge current to ground during overvoltage events. |
| Anode (unbanded end) | Reference/ground return path | Typically tied to system ground plane; completes clamping loop with minimal inductance for fast response. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Withstands high-energy transients from relay coil switching or ESD coupling without failure. |
| AEC-Q101 qualified (HM3 suffix) | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock. |
| MSL Level 1 moisture sensitivity | Enables direct placement into reflow ovens without baking; reduces manufacturing overhead and risk of popcorning. |
| Glass passivated junction | Ensures stable VBR over lifetime and immunity to surface contamination or humidity-induced parameter drift. |
| Low clamping ratio (VC/VBR ≈ 1.42) | Delivers tight voltage limiting - critical for protecting 3.3 V or 5 V logic interfaces powered from 12 V supplies. |
Applications
| Automotive Body Control Module (BCM) | Industrial PLC Digital Input Card |
|---|---|
|
Use Scenario: Protecting 12 V supply input of BCM microcontroller against load dump and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between fused 12 V rail and LDO input. Use Value: Limits transient voltage to ≤19.9 V, preventing latch-up or gate oxide damage in downstream regulators and MCUs. |
Use Scenario: Shielding 24 V digital input optocoupler front-end from field-wiring induced surges. IC Role / Device Role / Timing Role: Standoff protection device mounted directly at connector entry point. Use Value: Clamps 1 kV/500 A surge (per IEC 61000-4-5) to safe levels within nanoseconds, preserving signal integrity. |
| Consumer Appliance Motor Drive Board | Telecom Remote Power Feeder |
|
Use Scenario: Safeguarding H-bridge gate drivers from inductive kickback during BLDC motor commutation. IC Role / Device Role / Timing Role: Localized TVS on each half-bridge high-side and low-side supply rail. Use Value: Absorbs 600 W pulses without derating, maintaining driver IC functionality during rapid PWM transitions. |
Use Scenario: Protecting PoE-powered remote equipment from lightning-induced surges on 48 V feed lines. IC Role / Device Role / Timing Role: Primary-level TVS on DC input before DC/DC converter stage. Use Value: Provides first-line defense with 19.9 V clamping, reducing stress on secondary-stage TVS and isolation components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ12AHE3_B/I | Same electrical specs and package; RoHS-compliant but not AEC-Q101 qualified (E3 vs HM3). | Approved for commercial/industrial use only; not certified for automotive under-hood deployment. | Select when AEC-Q101 is not required and cost optimization is prioritized. |
| SMAJ12A-M3 | Lower PPPM (400 W), larger VBR tolerance (13.3–15.8 V), SMA package (DO-214AC) with higher RθJA (140 °C/W). | Limited to lower-energy transients; requires larger PCB pad area for thermal management. | Choose only if footprint compatibility with SMA is mandatory and surge energy is confirmed ≤400 W. |
Compared with SMBJ12AHM3_B/I, the HE3 variant lacks automotive qualification but offers identical clamping performance for non-automotive use, while the SMAJ12A-M3 trades power handling and thermal efficiency for smaller board area - making SMBJ12AHM3_B/I optimal where AEC-Q101 compliance and 600 W surge immunity are essential.
Availability
SMBJ12AHM3_B/I is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC input protection, consumer motor drive boards, and telecom remote power feeders requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for SMBJ12AHM3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, precision, and application-specific validation.
The SMBJ series targets high-surge industrial and automotive protection, engineered to meet stringent transient immunity standards (IEC 61000-4-5, ISO 7637-2) while supporting automated SMT manufacturing and extended temperature operation.
FAQ
What is the clamping voltage of SMBJ12AHM3_B/I at its rated peak pulse current?
The SMBJ12AHM3_B/I has a maximum clamping voltage (VC) of 19.9 V at 30.2 A peak pulse current (IPPM), measured under the standard 10/1000 µs waveform. This value ensures downstream components connected to a 12 V rail remain within safe operating voltage limits during surge events. The SMBJ12AHM3_B/I achieves this with low incremental surge resistance and fast response time, typical of Vishay's glass-passivated TRANSZORB® technology.
Is SMBJ12AHM3_B/I qualified for automotive applications?
Yes, SMBJ12AHM3_B/I is AEC-Q101 qualified, as confirmed by the "HM3" suffix denoting halogen-free, RoHS-compliant, and automotive-grade construction. It undergoes rigorous stress testing including temperature cycling, high-temperature operating life, and mechanical shock - making it suitable for under-hood and chassis-mounted automotive electronics. The SMBJ12AHM3_B/I meets requirements for body control modules, lighting drivers, and infotainment power supplies.
How does the SMBJ12AHM3_B/I differ from the SMBJ12A-E3 variant?
The SMBJ12AHM3_B/I and SMBJ12A-E3 share identical electrical parameters (VWM = 12 V, VC = 19.9 V, PPPM = 600 W) and SMB package, but differ in qualification and material compliance. SMBJ12AHM3_B/I is halogen-free and AEC-Q101 qualified; SMBJ12A-E3 is RoHS-compliant but commercial-grade only (no automotive qualification). Both use matte tin-plated leads, but SMBJ12AHM3_B/I is designated for automotive OEM use where certification is mandatory.
What is the maximum reverse leakage current for SMBJ12AHM3_B/I at 12 V?
The SMBJ12AHM3_B/I exhibits a maximum reverse leakage current (ID) of 5.0 µA at its rated stand-off voltage of 12 V (VWM), tested at TA = 25 °C. This ultra-low leakage preserves battery life in always-on automotive and IoT sensor applications and avoids false triggering in high-impedance monitoring circuits. The SMBJ12AHM3_B/I maintains this specification across its full operating temperature range (−55 °C to +150 °C), supported by its glass-passivated junction structure.
Can SMBJ12AHM3_B/I be used in bidirectional protection circuits?
No, SMBJ12AHM3_B/I is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. For bidirectional protection, Vishay specifies the "CA" suffix (e.g., SMBJ12CA), which provides symmetrical clamping in both polarities. Using SMBJ12AHM3_B/I in a bidirectional configuration would result in forward conduction during negative transients, potentially damaging the device or failing to protect the circuit. Always match the SMBJ12AHM3_B/I polarity to the DC bias direction of the protected line.
SMBJ12AHM3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 19.9V
- Current - Peak Pulse (10/1000µs):
- 30.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ12AHM3_B/I FAQ
1.How can I place an order for SMBJ12AHM3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ12AHM3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ12AHM3_B/I reliable?
The price and inventory of SMBJ12AHM3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ12AHM3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ12AHM3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ12AHM3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ12AHM3_B/I?
SMBJ12AHM3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ12AHM3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ12AHM3_B/I?
For technical support, including SMBJ12AHM3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ12AHM3_B/I requirements.
6.How does Aetrix verify that SMBJ12AHM3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ12AHM3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ12AHM3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ12AHM3_B/I?
All SMBJ12AHM3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ12AHM3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ12AHM3_B/I part is unused and in its original packaging.
Return procedure for SMBJ12AHM3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ12AHM3_B/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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