Vishay General Semiconductor - Diodes Division SMBJ12CHE3/5B
- Part No.:
- SMBJ12CHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ12CHE3/5B.pdf
- Description:
- TVS DIODE 12VWM 22VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:3,750
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ12CHE3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features 12 V stand-off voltage (VWM), 19.9 V maximum clamping voltage (VC) at 30.2 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 μs waveform), making it suitable for protecting MOSFET gates and sensor I/O in industrial motor drives.
For engineers reviewing the SMBJ12CHE3/5B datasheet, SMBJ12CHE3/5B pinout, SMBJ12CHE3/5B application, or SMBJ12CHE3/5B equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and RoHS-compliant matte tin plating per J-STD-002.
Technical Context
This TVS diode operates as a voltage-clamping protection device triggered by reverse-biased avalanche breakdown above its stand-off voltage. Its glass-passivated junction ensures stable breakdown characteristics and low leakage (<5.0 μA at VWM), while the low incremental surge resistance enables rapid energy absorption during transient events.
The SMBJ12CHE3/5B is rated for 600 W peak pulse power under 10/1000 μs waveform with 0.01% duty cycle, and supports repetitive surge handling when thermally managed on recommended 5.0 mm × 5.0 mm copper pads. Its 13.3–14.7 V breakdown voltage (VBR) at 1.0 mA test current confirms tight parametric control for reliable overvoltage thresholding.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC working margin. |
| VC @ IPPM | 19.9 V - Clamped voltage seen by protected circuit at 30.2 A surge; determines downstream component stress level. |
| IPPM | 30.2 A - Peak surge current capability under 10/1000 μs waveform; validates robustness against IEC 61000-4-5 Level 4 surges. |
| PPPM | 600 W - Transient power dissipation capacity; enables single-device protection of 12 V rail without external current limiting. |
| TJ max. | +150 °C - Maximum junction temperature; supports operation in under-hood automotive and industrial ambient environments. |
| RθJA | 100 °C/W - Thermal resistance junction-to-ambient on standard PCB pad; informs minimum copper area needed for sustained surge duty. |
| Leakage @ VWM | <5.0 μA - Reverse leakage current at stand-off voltage; ensures minimal quiescent power loss in battery-powered systems. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band marking on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side (e.g., ground or return path); conducts during forward surge or bias conditions. |
| Cathode | Avalanche clamping terminal | Connected to protected line (e.g., 12 V supply or signal); initiates clamping when reverse voltage exceeds VWM. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD22 standards. |
| 600 W peak pulse power | Enables single-device protection against IEC 61000-4-5 4 kV surge (line-earth) without derating or parallel devices. |
| Glass passivated junction | Ensures stable VBR tolerance (±5%) and long-term parameter stability across thermal and humidity stress. |
| MSL Level 1 (260 °C) | Compatible with standard lead-free reflow profiles without moisture sensitivity concerns or baking requirements. |
| RoHS-compliant & halogen-free option | HE3 suffix denotes RoHS compliance; HM3 variant adds halogen-free molding compound for stringent environmental programs. |
Applications
| Industrial Motor Drives | Automotive Body Control Modules |
|---|---|
Use Scenario: Protection of gate drivers and logic inputs against inductive kickback from relay coils and solenoid loads. IC Role / Device Role / Timing Role: Unidirectional TVS placed between MOSFET gate and source to clamp negative-going transients below –0.7 V and positive spikes above 12 V. Use Value: Prevents gate oxide damage and false triggering in 12 V control circuits exposed to >100 V switching transients. |
Use Scenario: Input protection for LIN bus transceivers and microcontroller I/O pins in door module assemblies. IC Role / Device Role / Timing Role: Standoff clamping device on 12 V supply rail and bidirectional data lines to absorb load dump and ESD events. Use Value: Maintains system uptime during ISO 7637-2 Pulse 1 (–150 V/50 ms) and IEC 61000-4-2 ±8 kV contact discharge. |
| Consumer Power Adapters | Industrial Sensor Signal Conditioning |
Use Scenario: Secondary-side overvoltage suppression on 12 V output rails of AC/DC adapters powering smart home hubs. IC Role / Device Role / Timing Role: Fast-response shunt protector placed after secondary rectifier to limit transient overshoot during no-load to full-load transitions. Use Value: Limits output voltage excursion to ≤19.9 V during 600 W surge, preventing damage to downstream DC-DC converters and USB-PD controllers. |
Use Scenario: Protection of analog front-end inputs (e.g., 4–20 mA loop receivers) against field wiring surges in factory automation PLCs. IC Role / Device Role / Timing Role: Low-leakage (≤5 μA) clamping element placed before op-amp input stage to prevent saturation and latch-up. Use Value: Preserves signal integrity by clamping transients within 1 ns response time while adding <0.5 pF parasitic capacitance at 0 V bias. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ12A-E3/5B | Commercial-grade version; lacks AEC-Q101 qualification and has wider VBR tolerance (13.3–14.7 V vs. HE3's tighter spec). | Approved for non-automotive industrial use only; not validated for automotive temperature cycling or humidity testing. | Select SMBJ12A-E3/5B for cost-sensitive consumer or commercial designs where automotive qualification is unnecessary. |
| SMAJ12AHE3-A | Lower power rating (400 W), smaller SMA (DO-214AC) package, higher RθJA (140 °C/W), same VWM/VC specs. | Used where board space is constrained but surge energy is limited to ≤400 W; unsuitable for repeated 600 W events. | Choose SMAJ12AHE3-A only when footprint reduction outweighs power handling needs and thermal derating is acceptable. |
Compared with SMBJ12A-E3/5B, the SMBJ12CHE3/5B provides automotive-grade reliability and tighter parametric control; versus SMAJ12AHE3-A, it delivers 50% higher surge power handling and superior thermal performance in identical PCB layouts.
Availability
SMBJ12CHE3/5B is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, and consumer power adapters requiring stable component supply with AEC-Q101 assurance and RoHS compliance.
Supply support for SMBJ12CHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on high-reliability, high-efficiency solutions.
The SMBJ series was developed for robust transient suppression in harsh environments, targeting automotive, industrial, and telecom applications where failure immunity and long-term parameter stability are critical.
FAQ
What is the clamping voltage of SMBJ12CHE3/5B at its rated peak pulse current?
The SMBJ12CHE3/5B exhibits a maximum clamping voltage (VC) of 19.9 V when subjected to its rated peak pulse current of 30.2 A under the standard 10/1000 μs waveform. This value is measured per Figure 1 in Vishay document 88392 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ12CHE3/5B maintains this clamping performance across its specified operating temperature range.
Is SMBJ12CHE3/5B qualified for automotive applications?
Yes, SMBJ12CHE3/5B is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and footnote (1) in the thermal characteristics table. This qualification covers stress tests including temperature cycling, high-temperature reverse bias, and ESD per JESD22 standards. The SMBJ12CHE3/5B is approved for use in automotive body electronics, infotainment power supplies, and sensor interfaces where reliability under extended temperature and vibration is required.
What does the "5B" in SMBJ12CHE3/5B indicate?
The "5B" in SMBJ12CHE3/5B specifies the packaging configuration: 13-inch diameter plastic tape and reel, containing 3200 units per reel. This differs from "52", which denotes a 7-inch reel with 750 units. The "HE3" portion indicates RoHS-compliant construction with AEC-Q101 qualification, while "SMBJ12C" identifies the 12 V unidirectional TVS variant in the SMBJ family. The SMBJ12CHE3/5B thus combines automotive qualification, environmental compliance, and high-volume automated assembly readiness.
How does SMBJ12CHE3/5B differ from SMBJ12A-E3/5B?
The SMBJ12CHE3/5B differs from SMBJ12A-E3/5B primarily in qualification and parametric control: SMBJ12CHE3/5B carries AEC-Q101 qualification and tighter VBR tolerance (13.3–14.7 V), whereas SMBJ12A-E3/5B is commercial-grade with broader VBR (13.3–15.9 V per datasheet row) and no automotive validation. Both share identical SMB package, 600 W rating, and RoHS compliance, but only SMBJ12CHE3/5B is approved for automotive under-hood and chassis applications.
What is the maximum operating temperature for SMBJ12CHE3/5B?
The SMBJ12CHE3/5B has a maximum operating junction temperature (TJ) of +150 °C and a storage temperature range of –55 to +150 °C. This rating is validated per AEC-Q101 stress testing and allows deployment in high-ambient environments such as engine compartments, industrial motor enclosures, and sealed power supplies. Derating of peak pulse power applies above TA = 25 °C per Figure 2 in Vishay document 88392, and the SMBJ12CHE3/5B must be mounted on minimum recommended copper pads to sustain thermal performance.
SMBJ12CHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 22V
- Current - Peak Pulse (10/1000µs):
- 27.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ12CHE3/5B FAQ
1.How can I place an order for SMBJ12CHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ12CHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ12CHE3/5B reliable?
The price and inventory of SMBJ12CHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ12CHE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ12CHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ12CHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ12CHE3/5B?
SMBJ12CHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ12CHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ12CHE3/5B?
For technical support, including SMBJ12CHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ12CHE3/5B requirements.
6.How does Aetrix verify that SMBJ12CHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ12CHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ12CHE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ12CHE3/5B?
All SMBJ12CHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ12CHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ12CHE3/5B part is unused and in its original packaging.
Return procedure for SMBJ12CHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ12CHE3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)