Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ130CAHE3_B/H

Part No.:
SMBJ130CAHE3_B/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ130CAHE3_B/H.pdf
Description:
600W,130V 5%,BIDIR,SMB TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,787

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ130CAHE3_B/H from Vishay General Semiconductor is a bidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 130 V standoff voltage (VWM), 144–159 V breakdown range (VBR), 209 A peak pulse current (IPPM), 600 W peak pulse power (PPPM), and 2.9 μA max reverse leakage at VWM - deployed in industrial sensor interfaces and telecom line protection.

For engineers reviewing the SMBJ130CAHE3_B/H datasheet, SMBJ130CAHE3_B/H pinout, SMBJ130CAHE3_B/H application, or SMBJ130CAHE3_B/H equivalent, this page delivers verified electrical specs, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), clamping behavior under 10/1000 μs surge, and real-world use cases in bidirectional overvoltage protection circuits.

Technical Context

This bidirectional TVS operates symmetrically across both polarities, with identical VBR min/max (144 V / 159 V), VC = 209 V at IPPM, and low incremental surge resistance enabling fast clamping response (<1 ns). Its glass-passivated junction ensures stable breakdown characteristics and long-term reliability under repetitive transient stress.

The device is rated for TJ = -55 °C to +150 °C, meets MSL Level 1 per J-STD-020 (260 °C peak reflow), and is qualified to AEC-Q101 - confirming suitability for automotive electronics where transient immunity and solder-joint integrity are critical.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 130 V - maximum continuous reverse operating voltage before clamping begins
VBR (min/max) 144 V / 159 V - guaranteed breakdown voltage range at 1 mA test current, defining turn-on threshold
VC @ IPPM 209 V - clamped voltage during 209 A 10/1000 μs surge, limiting downstream IC stress
PPPM 600 W - peak transient power handling capability under standardized 10/1000 μs waveform
ID @ VWM 2.9 μA - ultra-low reverse leakage at standoff voltage, minimizing standby power loss
RθJA 100 °C/W - thermal resistance junction-to-ambient on standard 0.2" × 0.2" copper pads
AEC-Q101 Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD

Pinout & Package

Package: SMB (DO-214AA), surface-mount, bidirectional configuration with no polarity marking - symmetrical anode/cathode terminals.

Pin/Terminal Circuit Role Design Meaning
Anode Transient return path (bidirectional) Acts as cathode during positive surges and anode during negative surges - enables symmetrical clamping
Cathode Transient return path (bidirectional) Acts as anode during positive surges and cathode during negative surges - completes bidirectional conduction loop

Key Features

Feature Design Value
Bidirectional clamping Enables single-device protection of AC-coupled or floating signal lines without polarity concerns
600 W peak pulse power Handles high-energy transients from inductive switching (e.g., relay coils, solenoids) without failure
AEC-Q101 qualification Validated for automotive subsystems requiring extended temperature operation and long-term reliability
MSL Level 1 rating Supports lead-free reflow up to 260 °C without popcorn cracking or delamination
Glass-passivated junction Improves moisture resistance and reduces parameter drift over time and temperature

Applications

Industrial Sensor Interface Telecom Line Protection

Use Scenario: Protecting RS-485 transceivers and analog sensor outputs from ESD and lightning-induced surges on factory floor wiring.

IC Role / Device Role / Timing Role: Bidirectional voltage clamp placed across differential pair or supply rail to limit transient excursions.

Use Value: Clamps 209 V at 209 A, preventing damage to ±10 V tolerant transceivers while maintaining signal integrity below 130 V normal operation.

Use Scenario: Safeguarding Ethernet PHY front-end circuitry against induced surges on twisted-pair data lines in outdoor telecom cabinets.

IC Role / Device Role / Timing Role: Primary-level TVS mounted at connector entry point to shunt common-mode transients before reaching magnetics or PHY IC.

Use Value: Symmetrical 144–159 V breakdown ensures equal protection for both line polarities, eliminating need for dual unidirectional devices.

Automotive Body Control Module Power Supply Input Stage

Use Scenario: Suppressing load-dump and jump-start transients on 12 V CAN/LIN bus power rails in BCMs.

IC Role / Device Role / Timing Role: Secondary-stage TVS parallel to bulk input capacitor, activated after primary fuse or polyfuse limits energy.

Use Value: AEC-Q101 qualification guarantees operation from -40 °C to +125 °C ambient, with 209 V clamping limiting stress on downstream DC/DC controllers.

Use Scenario: Protecting AC/DC adapter secondary-side outputs and DC-DC converter inputs from cross-talk and back-EMF spikes.

IC Role / Device Role / Timing Role: Clamp placed between output rail and ground to absorb short-duration overshoots during regulation transitions.

Use Value: 2.9 μA leakage at 130 V minimizes quiescent current impact on low-power standby modes, while 600 W rating handles worst-case surge events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional TVS diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ130CA-E3/52 Commercial-grade (non-AEC-Q101), same VWM/VBR/VC/PPPM, identical SMB package Lacks automotive qualification; suitable for industrial/commercial designs without AEC requirements Select when AEC-Q101 is not mandated and cost optimization is prioritized
SAC130CA Same 130 V VWM, but SOD-123FL package (smaller footprint, lower IPPM = 170 A, PPPM = 400 W) Lower surge capacity; limited to lower-energy transients in space-constrained layouts Choose only if board area is critical and surge threat level is reduced per IEC 61000-4-5 Level 3

Compared with SMBJ130CAHE3_B/H, the E3/52 variant offers identical electrical performance without automotive qualification, while SAC130CA trades surge robustness for miniaturization - making SMBJ130CAHE3_B/H the optimal choice for AEC-compliant, high-energy transient environments.

Availability

SMBJ130CAHE3_B/H is available at Aetrix Electronics and suitable for industrial sensor interfaces, telecom line protection, automotive body control modules, and power supply input stages requiring stable component supply and AEC-Q101 assurance.

Supply support for SMBJ130CAHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.

The SMBJ series targets high-reliability transient suppression in harsh environments - engineered for automotive, industrial, and telecom systems where robustness against ESD, EFT, and surge events is non-negotiable.

FAQ

What is the clamping voltage of SMBJ130CAHE3_B/H at its rated peak pulse current?

The SMBJ130CAHE3_B/H clamps to a maximum of 209 V when subjected to its rated 209 A peak pulse current (IPPM) under the standard 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring downstream ICs remain within absolute maximum ratings.

Is SMBJ130CAHE3_B/H suitable for automotive applications?

Yes, SMBJ130CAHE3_B/H is AEC-Q101 qualified, confirming compliance with stress tests including high-temperature reverse bias, temperature cycling, and ESD. Its -55 °C to +150 °C operating junction temperature range and MSL Level 1 reflow compatibility make it appropriate for under-hood and cabin automotive modules such as body control units and infotainment power supplies.

How does the bidirectional design of SMBJ130CAHE3_B/H affect its PCB layout?

The SMBJ130CAHE3_B/H has no polarity marking and symmetrical terminals, simplifying PCB layout by eliminating orientation constraints. It can be placed across any two nodes requiring bidirectional overvoltage protection - such as differential signal pairs or floating power rails - without concern for anode/cathode alignment, reducing assembly errors and enabling automated placement on either side of a board.

What is the thermal resistance of SMBJ130CAHE3_B/H, and how does it impact power dissipation?

SMBJ130CAHE3_B/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" copper pads. This means a 5.0 W steady-state power dissipation (PD) raises the junction temperature by 500 °C above ambient - but since PD is specified at TA = 50 °C and derates above that, actual safe continuous power depends on board layout and airflow. The 600 W PPPM rating applies only to short-duration pulses, not DC loading.

Does SMBJ130CAHE3_B/H meet RoHS and halogen-free requirements?

Yes, SMBJ130CAHE3_B/H carries the "HE3" suffix, indicating it is RoHS-compliant and AEC-Q101 qualified. Per Vishay documentation, HE3 parts use matte tin-plated leads and molding compounds meeting UL 94 V-0, with no restricted substances per EU RoHS Directive 2011/65/EU. Halogen-free status is confirmed for HM3 variants, but HE3 is RoHS-compliant without explicit halogen-free certification.

SMBJ130CAHE3_B/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Bulk
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
130V
Voltage - Breakdown (Min):
144V
Voltage - Clamping (Max) @ Ipp:
209V
Current - Peak Pulse (10/1000µs):
2.9A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

SMBJ130CAHE3_B/H FAQ

1.How can I place an order for SMBJ130CAHE3_B/H through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ130CAHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ130CAHE3_B/H reliable?

The price and inventory of SMBJ130CAHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ130CAHE3_B/H is usually 5 days.

3.What payment methods are accepted for SMBJ130CAHE3_B/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ130CAHE3_B/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ130CAHE3_B/H?

SMBJ130CAHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ130CAHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ130CAHE3_B/H?

For technical support, including SMBJ130CAHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ130CAHE3_B/H requirements.

6.How does Aetrix verify that SMBJ130CAHE3_B/H is sourced from the original manufacturer or authorized distributors?

All SMBJ130CAHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ130CAHE3_B/H meets industry standards.

7.What is the process for return or replacement of SMBJ130CAHE3_B/H?

All SMBJ130CAHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ130CAHE3_B/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ130CAHE3_B/H part is unused and in its original packaging.

Return procedure for SMBJ130CAHE3_B/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ130CAHE3_B/H Tags

  • SMBJ130CAHE3_B/H
  • SMBJ130CAHE3_B/H PDF
  • SMBJ130CAHE3_B/H Datasheet
  • SMBJ130CAHE3_B/H Specifications
  • SMBJ130CAHE3_B/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ130CAHE3_B/H
  • Buy SMBJ130CAHE3_B/H
  • SMBJ130CAHE3_B/H Price
  • SMBJ130CAHE3_B/H Distributor
  • SMBJ130CAHE3_B/H Supplier
  • SMBJ130CAHE3_B/H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER