Vishay General Semiconductor - Diodes Division SMBJ13AHE3/52
- Part No.:
- SMBJ13AHE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ13AHE3/52.pdf
- Description:
- TVS DIODE 13VWM 21.5VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:4,549
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ13AHE3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features 13 V standoff voltage (VWM), 14.4–15.9 V breakdown range at 1 mA, 21.5 V maximum clamping voltage at 27.9 A peak pulse current (10/1000 µs), and 600 W peak pulse power rating - used to protect MOSFET gates, microcontroller I/O, and sensor interfaces in industrial motor drives.
For engineers reviewing the SMBJ13AHE3/52 datasheet, SMBJ13AHE3/52 pinout, SMBJ13AHE3/52 application, or SMBJ13AHE3/52 equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature limit (TJ = 150 °C), and compliance with UL 497B for telecom and automotive protection systems.
Technical Context
This TVS diode operates as a voltage-clamping device in reverse-biased configuration, triggering when transient voltage exceeds its breakdown threshold (VBR). Its glass-passivated junction ensures stable leakage performance (<1.0 µA at VWM) and fast response time (<1 ns), critical for suppressing ESD events per IEC 61000-4-2 Level 4.
The SMBJ13AHE3/52 is rated for 100 A non-repetitive forward surge current (8.3 ms half-sine), supports automated SMT placement, and meets J-STD-020 MSL Level 1 with 260 °C reflow peak - enabling use in high-reliability automotive ECUs and industrial PLCs without derating concerns below 25 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 13 V - maximum continuous reverse operating voltage before clamping begins; defines safe operating margin for 12 V rail protection. |
| VBR @ IT = 1 mA | 14.4–15.9 V - verified breakdown range ensuring reliable turn-on during transients while avoiding false triggering. |
| VC @ IPPM = 27.9 A | 21.5 V - clamped voltage under 600 W 10/1000 µs surge; limits downstream IC stress to safe levels. |
| PPPM | 600 W - peak pulse power handling capacity; supports repetitive surges at 0.01% duty cycle in motor drive snubbers. |
| IFSM | 100 A - single half-sine surge rating (8.3 ms); enables robust protection against inductive kickback in relay/valve drivers. |
| TJ max. | 150 °C - maximum junction temperature; allows operation in under-hood automotive environments with minimal heatsinking. |
| RθJA | 100 °C/W - thermal resistance junction-to-ambient on standard 0.2" × 0.2" copper pads; informs PCB layout thermal design. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Surge return path | Connected to ground or low-impedance reference; completes clamping loop during transient events. |
| Cathode | Reverse-biased clamping node | Connected to protected line (e.g., 12 V supply or sensor output); conducts only during overvoltage conditions. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control modules and body electronics - supports PPAP documentation requirements. |
| 600 W peak pulse power (10/1000 µs) | Handles high-energy lightning-induced surges per IEC 61000-4-5 Level 3 (1 kV/2 Ω) without degradation. |
| Low clamping ratio (VC/VBR ≈ 1.43) | Minimizes voltage overshoot during clamping - critical for protecting 3.3 V or 5 V logic interfaces downstream. |
| MSL Level 1, 260 °C peak reflow | Enables single-pass lead-free reflow assembly without moisture sensitivity concerns or baking requirements. |
| Glass passivated junction | Ensures stable leakage current (<1.0 µA at VWM) across temperature and lifetime - improves long-term reliability in harsh environments. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed microcontroller power inputs in vehicle body control modules from load dump and jump-start transients. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between VIN and GND, triggered within <1 ns to limit voltage to ≤21.5 V during 600 W surges. Use Value: Prevents latch-up or permanent damage to MCU power management ICs during ISO 7637-2 Pulse 5a (75 V/100 ms) events. |
Use Scenario: Shielding analog outputs of pressure sensors in factory automation systems from ESD and cable discharge events. IC Role / Device Role / Timing Role: TVS placed across sensor output and ground, absorbing ±8 kV contact ESD per IEC 61000-4-2 without affecting signal fidelity. Use Value: Maintains sub-1 mV baseline noise and avoids calibration drift caused by transient-induced junction heating. |
| Telecom Line Interface Protection | MOSFET Gate Driver Protection |
|
Use Scenario: Safeguarding RS-485 transceiver data lines in outdoor base station equipment exposed to induced lightning surges. IC Role / Device Role / Timing Role: Paired unidirectional TVS devices (SMBJ13AHE3/52 + SMBJ13CAHE3/52) clamp differential and common-mode transients on A/B lines. Use Value: Enables compliance with Telcordia GR-1089-CORE Zone 3 surge immunity (10/700 µs, 1 kV) without signal distortion. |
Use Scenario: Protecting high-side N-channel MOSFET gate drivers in BLDC motor inverters from Miller-induced voltage spikes during switching transitions. IC Role / Device Role / Timing Role: Connected between gate and source terminals to clamp dv/dt-induced overshoot exceeding VGS(max). Use Value: Eliminates gate oxide breakdown risk while preserving <10 ns switching speed due to low junction capacitance (~300 pF). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ13AHM3/52 | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. | No functional difference; selected where halogen-free materials are mandated by OEM environmental policy. | Choose SMBJ13AHM3/52 when compliance with IPC-1752A Class 2 or EU Directive 2015/863 is required. |
| SMAJ13AHE3/A | Lower 400 W PPPM, SMA package (smaller footprint, higher RθJA = 140 °C/W), same VWM/VC ratings. | Not suitable for 600 W surge environments; limited to lower-energy I/O line protection in space-constrained consumer devices. | Select SMAJ13AHE3/A only if board area is critical and surge threat level is ≤400 W (e.g., USB port ESD only). |
Compared with SMBJ13AHE3/52, SMBJ13AHM3/52 offers identical protection performance with halogen-free construction, while SMAJ13AHE3/A trades 33 % lower surge capacity and reduced thermal margin for 30 % smaller PCB area - making SMBJ13AHE3/52 the optimal choice for automotive and industrial 600 W surge zones.
Availability
SMBJ13AHE3/52 is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface hardening, telecom line surge suppression, and MOSFET gate driver safeguarding requiring stable component supply across extended production lifecycles.
Supply support for SMBJ13AHE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SMBJ series was developed specifically for robust, surface-mount transient suppression in AEC-Q101-compliant automotive subsystems and high-noise industrial environments - emphasizing clamping precision, surge endurance, and process consistency.
FAQ
What is the maximum clamping voltage of SMBJ13AHE3/52 under a 10/1000 µs surge?
The SMBJ13AHE3/52 has a maximum clamping voltage (VC) of 21.5 V at 27.9 A peak pulse current (IPPM) under the standardized 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and guarantees that protected circuitry sees no more than 21.5 V during worst-case surge events - essential for safeguarding 24 V-tolerant logic interfaces and power management ICs. The SMBJ13AHE3/52 maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C).
Is SMBJ13AHE3/52 qualified for automotive applications?
Yes, SMBJ13AHE3/52 is AEC-Q101 qualified, as confirmed by Vishay's official documentation and ordering code suffix "HE3". This qualification covers stress testing for high-temperature operating life, temperature cycling, humidity bias, and mechanical shock - validating its suitability for under-hood and chassis-mounted automotive electronics such as body control modules, lighting drivers, and ADAS sensor interfaces. The SMBJ13AHE3/52 meets all requirements for PPAP Level 3 submission in Tier 1 automotive supply chains.
What is the standoff voltage (VWM) of SMBJ13AHE3/52, and how does it relate to system voltage?
The standoff voltage (VWM) of SMBJ13AHE3/52 is 13 V - the maximum DC or continuous reverse voltage the device can withstand without entering breakdown. This rating is intentionally set ~8 % above nominal 12 V systems to accommodate normal ripple, tolerance, and cold-crank dips while ensuring reliable clamping only during transients. Using SMBJ13AHE3/52 on a 12 V rail provides sufficient margin against false triggering while maintaining fast response to >14.4 V surges. The SMBJ13AHE3/52 datasheet specifies VWM with 1.0 µA maximum leakage at this voltage.
Does SMBJ13AHE3/52 have bidirectional capability?
No, SMBJ13AHE3/52 is strictly unidirectional - indicated by the "A" suffix and cathode band marking. It conducts only in reverse breakdown mode and must be installed with cathode toward the protected line. For bidirectional protection (e.g., AC signal lines or differential buses), the equivalent part is SMBJ13CAHE3/52, which uses a "CA" suffix and exhibits symmetrical clamping in both polarities. The SMBJ13AHE3/52 datasheet explicitly states polarity as "unidirectional" and references cathode identification - confirming no inherent bidirectional functionality.
What is the thermal resistance (RθJA) of SMBJ13AHE3/52, and how does it affect PCB layout?
The SMBJ13AHE3/52 has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal - as defined in Vishay's test condition. This value directly impacts PCB thermal design: for example, dissipating 1 W continuously requires a 100 °C temperature rise above ambient, so layout must include adequate copper area and optional thermal vias to avoid exceeding the 150 °C maximum junction temperature. The SMBJ13AHE3/52 package (SMB/DO-214AA) supports this via standardized pad dimensions shown in the mechanical drawing.
SMBJ13AHE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 13V
- Voltage - Breakdown (Min):
- 14.4V
- Voltage - Clamping (Max) @ Ipp:
- 21.5V
- Current - Peak Pulse (10/1000µs):
- 27.9A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ13AHE3/52 FAQ
1.How can I place an order for SMBJ13AHE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ13AHE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ13AHE3/52 reliable?
The price and inventory of SMBJ13AHE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ13AHE3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ13AHE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ13AHE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ13AHE3/52?
SMBJ13AHE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ13AHE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ13AHE3/52?
For technical support, including SMBJ13AHE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ13AHE3/52 requirements.
6.How does Aetrix verify that SMBJ13AHE3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ13AHE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ13AHE3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ13AHE3/52?
All SMBJ13AHE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ13AHE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ13AHE3/52 part is unused and in its original packaging.
Return procedure for SMBJ13AHE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ13AHE3/52 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)