Vishay General Semiconductor - Diodes Division SMBJ13AHE3_B/I
- Part No.:
- SMBJ13AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ13AHE3_B/I.pdf
- Description:
- 600W,13V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:6,990
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ13AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features 13 V standoff voltage (VWM), 14.4–15.9 V breakdown voltage (VBR) at 1 mA, 21.5 V maximum clamping voltage (VC) at 27.9 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 µs waveform), used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.
For engineers reviewing the SMBJ13AHE3_B/I datasheet, SMBJ13AHE3_B/I pinout, SMBJ13AHE3_B/I application, or SMBJ13AHE3_B/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), and compliance with UL 497B for telecom and automotive electronics protection.
Technical Context
This TVS diode operates as a voltage-clamping device that enters avalanche conduction when reverse voltage exceeds its breakdown threshold (VBR), limiting transient energy to safe levels across protected circuit nodes. Its glass-passivated junction ensures stable leakage performance and fast response time (<1 ns), while the low incremental surge resistance supports effective suppression of high-current transients without thermal runaway.
The SMBJ13AHE3_B/I is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), operates over -55 °C to +150 °C junction temperature range, and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. Its matte tin-plated leads comply with J-STD-002 and JESD 22-B102 solderability standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 13 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC bias margin for protected line. |
| VBR (Breakdown Voltage) | 14.4–15.9 V at 1 mA - Confirmed avalanche onset range; ensures reliable triggering above normal operating voltage. |
| VC (Clamping Voltage) | 21.5 V at IPPM = 27.9 A - Peak voltage seen by downstream circuit during 10/1000 µs surge; determines minimum IC survival margin. |
| PPPM (Peak Pulse Power) | 600 W (10/1000 µs) - Sustained transient energy handling capability; validates suitability for IEC 61000-4-5 Level 4 surges. |
| ID (Reverse Leakage) | 1.0 µA max. at VWM - Low leakage preserves signal integrity and minimizes standby power loss in high-impedance circuits. |
| TJ max. | +150 °C - Enables operation in under-hood automotive or enclosed industrial environments without derating. |
| RθJA | 100 °C/W - Thermal resistance from junction to ambient on standard 0.2" × 0.2" copper pads; informs heatsinking requirements. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with cathode band marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); matte tin-plated leads; UL 94 V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Surge return path | Connected to ground or low-impedance reference; completes clamping loop during transient events. |
| Cathode | Protected line connection / Surge input | Connected to line being protected (e.g., 12 V rail or sensor output); reverse-biased during normal operation. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity testing, and surge endurance per stress test plan. |
| Glass passivated junction | Ensures stable VBR tolerance and low leakage drift over lifetime, critical for long-term protection integrity in harsh environments. |
| 600 W peak pulse power | Supports robust immunity against IEC 61000-4-5 combination wave surges up to 4 kV (open-circuit)/2 kA (short-circuit). |
| MSL Level 1 rating | Enables standard SMT reflow without moisture sensitivity concerns; no baking required prior to assembly. |
| RoHS-compliant & halogen-free option | HE3 suffix denotes RoHS-compliant construction; HM3 variant adds halogen-free epoxy for stringent environmental compliance. |
Applications
| Automotive Body Control Module | Industrial PLC Digital Input |
|---|---|
|
Use Scenario: Protecting 12 V supply rails and LIN bus lines from load dump and inductive switching transients in BCMs. IC Role / Device Role: Unidirectional clamping TVS placed between power rail and chassis ground. Use Value: Limits transient voltage to ≤21.5 V, preventing damage to microcontrollers and CAN/LIN transceivers rated for 36 V absolute max. |
Use Scenario: Safeguarding 24 V digital input channels in programmable logic controllers exposed to relay coil flyback and field wiring surges. IC Role / Device Role: Standoff-rated TVS connected across input terminal and common reference to clamp induced spikes. Use Value: Withstands 100 A surge (8.3 ms) and maintains <1 µA leakage at 24 V, preserving input threshold accuracy and noise immunity. |
| Telecom Power Supply Output | Automotive Sensor Interface |
|
Use Scenario: Secondary-side transient suppression on +12 V or +5 V outputs of AC/DC adapters powering base station control boards. IC Role / Device Role: Fast-response TVS shunting surge energy away from downstream DC-DC converters and PMICs. Use Value: Clamps 600 W surges within nanoseconds, reducing risk of latch-up or gate oxide failure in sensitive power management ICs. |
Use Scenario: Protecting analog outputs of pressure or temperature sensors connected to engine control units via long harnesses. IC Role / Device Role: Localized TVS mounted adjacent to sensor connector to minimize inductance in clamping path. Use Value: 21.5 V clamping voltage ensures sensor output stays within ADC input range (0–5 V or 0–3.3 V) even during 2 kV EFT bursts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ13AHM3_B/I | Halogen-free epoxy variant; identical electrical specs and AEC-Q101 qualification. | No functional difference; selected where halogen-free compliance is mandated (e.g., EU automotive Tier 1). | Direct material substitution when RoHS + halogen-free requirements apply; same footprint and thermal behavior. |
| SMBJ13A-E3/5B | Commercial-grade (non-AEC-Q101), same VWM/VBR/VC/PPPM, but rated only for -55 °C to +150 °C without automotive stress validation. | Suitable for industrial or consumer applications where automotive qualification is not required. | Lower-cost alternative for non-automotive designs; verify system-level reliability testing if deployed in harsh environments. |
Compared with SMBJ13AHE3_B/I, the HM3 variant offers identical protection performance with halogen-free compliance, while the E3/5B version provides cost-efficient commercial-grade protection without AEC-Q101 validation-enabling tiered sourcing based on end-equipment qualification needs.
Availability
SMBJ13AHE3_B/I is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC inputs, and telecom power supply outputs requiring stable component supply with full AEC-Q101 traceability and RoHS compliance.
Supply support for SMBJ13AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, precision, and application-specific optimization.
The SMBJ series was developed for high-energy transient suppression in space-constrained, high-reliability applications-including automotive, industrial automation, and telecom infrastructure-where consistent clamping, low leakage, and AEC-Q101 validation are mandatory.
FAQ
What is the clamping voltage of SMBJ13AHE3_B/I at its rated peak pulse current?
The SMBJ13AHE3_B/I has a maximum clamping voltage (VC) of 21.5 V at its specified peak pulse current (IPPM) of 27.9 A under a 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during standardized surge events. The SMBJ13AHE3_B/I maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C).
Is SMBJ13AHE3_B/I qualified for automotive applications?
Yes, SMBJ13AHE3_B/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in datasheet 88392 (Revision 09-Jan-2024). This qualification covers stress tests including temperature cycling, humidity bias, and surge endurance, making SMBJ13AHE3_B/I suitable for under-hood and body electronics where automotive reliability standards apply.
What does the "_B/I" suffix indicate in SMBJ13AHE3_B/I?
The "_B/I" suffix in SMBJ13AHE3_B/I denotes packaging configuration: "B" indicates tape-and-reel packaging per Vishay's internal revision coding, and "I" specifies a 13-inch diameter reel containing 3200 units. This matches the preferred package code "I" and base quantity "3200" listed in the Ordering Information table of datasheet 88392.
How does SMBJ13AHE3_B/I differ from bidirectional variants like SMBJ13CA?
SMBJ13AHE3_B/I is unidirectional, with polarity marked by a cathode band and intended for DC line protection where reverse conduction must be blocked. In contrast, SMBJ13CA is bidirectional, symmetric in both directions, and used for AC or differential signal lines. Their VBR and VC values differ: SMBJ13AHE3_B/I has VBR = 14.4–15.9 V (unidirectional), while SMBJ13CA has VBR = 14.4–15.9 V in both directions but no defined anode/cathode polarity.
What is the thermal resistance and maximum power dissipation of SMBJ13AHE3_B/I?
SMBJ13AHE3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" copper pads, and a steady-state power dissipation (PD) rating of 5.0 W at TA = 50 °C. These values define its ability to dissipate heat during continuous leakage or repeated low-energy transients, and inform PCB layout decisions such as pad size and copper area allocation.
SMBJ13AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 13V
- Voltage - Breakdown (Min):
- 14.4V
- Voltage - Clamping (Max) @ Ipp:
- 21.5V
- Current - Peak Pulse (10/1000µs):
- 27.9A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ13AHE3_B/I FAQ
1.How can I place an order for SMBJ13AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ13AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ13AHE3_B/I reliable?
The price and inventory of SMBJ13AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ13AHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ13AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ13AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ13AHE3_B/I?
SMBJ13AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ13AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ13AHE3_B/I?
For technical support, including SMBJ13AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ13AHE3_B/I requirements.
6.How does Aetrix verify that SMBJ13AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ13AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ13AHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ13AHE3_B/I?
All SMBJ13AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ13AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ13AHE3_B/I part is unused and in its original packaging.
Return procedure for SMBJ13AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ13AHE3_B/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

