Vishay General Semiconductor - Diodes Division SMBJ13AHM3/I
- Part No.:
- SMBJ13AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ13AHM3/I.pdf
- Description:
- TVS DIODE 13VWM 21.5VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:7,475
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Product details
Overview
SMBJ13AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed to protect sensitive electronics against inductive switching transients and lightning-induced surges. It features a 13 V stand-off voltage (VWM), 21.5 V maximum clamping voltage at 27.9 A peak pulse current (10/1000 μs), and 600 W peak pulse power dissipation - deployed on signal lines of industrial sensors and MOSFET gate drivers.
For engineers reviewing the SMBJ13AHM3/I datasheet, SMBJ13AHM3/I pinout, SMBJ13AHM3/I application, or SMBJ13AHM3/I equivalent, this page delivers verified electrical specs, thermal derating behavior, AEC-Q101 qualification status, and real-world protection use cases for automotive-grade board-level surge immunity design.
Technical Context
The SMBJ13AHM3/I operates as a unidirectional avalanche diode with cathode-band polarity marking, optimized for fast response (<1 ns) to transient overvoltages while maintaining low incremental surge resistance. Its glass-passivated junction ensures stable breakdown characteristics and long-term reliability under repetitive surge stress.
Rated for -55 °C to +150 °C operating junction temperature, it uses a thermally efficient SMB package with RθJA = 100 °C/W and RθJL = 20 °C/W, enabling robust performance on standard PCB copper pads (0.2" × 0.2") without heatsinking in most industrial and automotive applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 13 V - Maximum continuous reverse working voltage before clamping begins; sets minimum system operating margin. |
| VBR (Breakdown Voltage) | 14.4 V min / 15.9 V max at 1 mA - Confirmed avalanche onset range; defines clamping threshold consistency across production lots. |
| VC (Clamping Voltage) | 21.5 V at IPPM = 27.9 A (10/1000 μs) - Peak voltage seen by protected circuit during worst-case surge; critical for IC I/O voltage tolerance. |
| PPPM (Peak Pulse Power) | 600 W - Sustained energy absorption capability per transient event; enables compliance with IEC 61000-4-5 Level 3 (1 kV/2 Ω). |
| ID (Reverse Leakage) | 1.0 μA max at VWM - Negligible standby current draw; avoids signal line loading or battery drain in always-on systems. |
| TJ max | +150 °C - Enables operation in under-hood automotive environments and high-temperature industrial enclosures. |
| AEC-Q101 Qualified | Yes - Validated for automotive electronic modules requiring zero-failure reliability under temperature cycling, humidity, and mechanical shock. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, MSL Level 1 (260 °C reflow peak). Cathode identified by molded band; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts surge current to ground when voltage exceeds VBR. |
| Anode (unbanded end) | Reference node | Typically tied to system ground or low-impedance return path; completes clamping loop during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 μs) | Supports IEC 61000-4-5 surge immunity up to 1 kV open-circuit / 0.5 kV into 2 Ω load without degradation. |
| 21.5 V clamping at 27.9 A | Protects 24 V industrial I/O circuits and 16 V automotive sensor interfaces within safe voltage margins. |
| AEC-Q101 qualified (HM3 suffix) | Validated for automotive powertrain, body control, and ADAS modules requiring zero latent defects over 15-year service life. |
| Low profile SMB package | Enables automated placement on dense PCBs and fits tight board space constraints typical in ECU and motor drive designs. |
| Glass passivated junction | Ensures stable VBR over time and temperature; eliminates parameter drift in high-humidity or thermal-cycling environments. |
Applications
| Industrial Sensor Protection | Automotive Body Control Module |
|---|---|
|
Use Scenario: Protecting analog output lines (4–20 mA) and digital I/O (CAN/LIN) of pressure/temperature sensors exposed to relay coil back-EMF and cable discharge events. IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor signal line and chassis ground to clamp transients before they reach ADC input or microcontroller GPIO. Use Value: Prevents latch-up or permanent damage to precision op-amps and SAR ADCs by limiting voltage excursion to ≤21.5 V during 27.9 A surges. |
Use Scenario: Safeguarding LIN bus transceivers and power window motor drivers against battery dump and load-dump transients in vehicle door modules. IC Role / Device Role / Timing Role: Standoff-rated TVS on VBAT-supplied rails and LIN signal paths, absorbing 600 W pulses without thermal runaway. Use Value: Maintains functional safety integrity per ISO 16750-2 by ensuring no communication interruption or component failure during 12 V system load-dump events. |
| Motor Drive Gate Protection | Power Supply Input Stage |
|
Use Scenario: Shielding high-side/low-side MOSFET gate drivers from Miller-induced spikes and shoot-through transients in BLDC inverters. IC Role / Device Role / Timing Role: Fast-response TVS mounted directly at gate driver output pins to clamp sub-10 ns ringing above 13 V. Use Value: Eliminates false turn-on and gate oxide stress by clamping gate-source voltage to ≤21.5 V, preserving FET reliability over >10⁵ switching cycles. |
Use Scenario: Front-end surge suppression on 24 V DC input rails of programmable logic controllers and industrial HMIs subjected to field wiring faults. IC Role / Device Role / Timing Role: Primary unidirectional TVS in series with fuse and common-mode choke, diverting >95 % of surge energy to ground. Use Value: Enables UL 61000-4-5 Level 4 compliance (4 kV line-to-ground) while maintaining <5 ms fault-clearing time and zero downstream component damage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ13AHE3/I | Same electrical specs but RoHS-compliant commercial grade (non-AEC-Q101); no halogen-free certification. | Lacks automotive qualification; suitable for consumer or non-safety-critical industrial equipment. | Select when AEC-Q101 is not required and cost optimization is prioritized over automotive traceability. |
| SMAJ13A-M3 | Lower PPPM (400 W), higher VC (23.2 V at 17.6 A), SMA package (smaller footprint, lower thermal mass). | Reduced surge handling margin; limited to lower-energy transients (IEC 61000-4-5 Level 2). | Choose only if board space is constrained and surge threat level is confirmed ≤400 W; verify thermal derating at TJ > 100 °C. |
Compared with SMBJ13AHM3/I, SMBJ13AHE3/I offers identical protection performance without automotive qualification, while SMAJ13A-M3 trades surge capacity and thermal robustness for smaller size - making SMBJ13AHM3/I the optimal choice for AEC-Q101-compliant, high-reliability 24 V system protection.
Availability
SMBJ13AHM3/I is available at Aetrix Electronics and suitable for industrial sensor protection, automotive body control modules, and motor drive gate protection requiring stable component supply and full AEC-Q101 traceability.
Supply support for SMBJ13AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SMBJ series was engineered specifically for board-level transient immunity in harsh environments, combining high-power surge handling with AEC-Q101 validation and compact SMB packaging for next-generation ECUs and power electronics.
FAQ
What is the clamping voltage of SMBJ13AHM3/I at its rated peak pulse current?
The SMBJ13AHM3/I has a maximum clamping voltage (VC) of 21.5 V at its rated peak pulse current (IPPM) of 27.9 A under the standard 10/1000 μs waveform. This value is measured at TA = 25 °C with devices mounted on 0.2" × 0.2" copper pads and represents the upper limit of voltage imposed on protected circuitry during worst-case surge events - critical for ensuring compatibility with 24 V system I/O tolerances.
Is SMBJ13AHM3/I qualified for automotive applications?
Yes, SMBJ13AHM3/I is AEC-Q101 qualified, as indicated by the "HM3" suffix (halogen-free, RoHS-compliant, and AEC-Q101 qualified). It has undergone rigorous stress testing including temperature cycling, humidity bias, mechanical shock, and accelerated life testing per AEC-Q101 Rev H, making it suitable for deployment in automotive body control modules, infotainment power supplies, and ADAS sensor interfaces.
What does the "HM3" suffix mean in SMBJ13AHM3/I?
The "HM3" suffix in SMBJ13AHM3/I denotes halogen-free, RoHS-compliant construction with full AEC-Q101 qualification. It distinguishes this variant from commercial-grade versions (e.g., "E3" or "M3") and confirms compliance with automotive material requirements, including JESD201 Class 2 whisker resistance and MSL Level 1 moisture sensitivity for lead-free reflow soldering up to 260 °C peak.
How does SMBJ13AHM3/I compare to bidirectional TVS diodes like SMBJ13CA?
SMBJ13AHM3/I is unidirectional and intended for DC-biased lines where polarity is fixed (e.g., VCC rails or single-ended signal paths), offering tighter leakage control (1.0 μA max) and lower forward voltage drop. In contrast, SMBJ13CA is bidirectional and suited for AC-coupled or differential lines (e.g., RS-485), but exhibits double the reverse leakage at low VWM and lacks cathode polarity marking - making SMBJ13AHM3/I preferable for precision 24 V DC protection.
What is the thermal resistance of SMBJ13AHM3/I, and how does it affect layout?
SMBJ13AHM3/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W and junction-to-lead resistance (RθJL) of 20 °C/W. To maintain TJ ≤ 150 °C under 600 W surge conditions, PCB layout must use minimum 0.2" × 0.2" copper pads per terminal per Vishay's recommended mounting pad layout - undersized traces or insufficient copper area will cause localized overheating and premature failure during repetitive surges.
SMBJ13AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 13V
- Voltage - Breakdown (Min):
- 14.4V
- Voltage - Clamping (Max) @ Ipp:
- 21.5V
- Current - Peak Pulse (10/1000µs):
- 27.9A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ13AHM3/I FAQ
1.How can I place an order for SMBJ13AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ13AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ13AHM3/I reliable?
The price and inventory of SMBJ13AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ13AHM3/I is usually 5 days.
3.What payment methods are accepted for SMBJ13AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ13AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ13AHM3/I?
SMBJ13AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ13AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ13AHM3/I?
For technical support, including SMBJ13AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ13AHM3/I requirements.
6.How does Aetrix verify that SMBJ13AHM3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ13AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ13AHM3/I meets industry standards.
7.What is the process for return or replacement of SMBJ13AHM3/I?
All SMBJ13AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ13AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ13AHM3/I part is unused and in its original packaging.
Return procedure for SMBJ13AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ13AHM3/I Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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DESD5V0U1BA-7
Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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PESD2V0Y1BSFYL
Nexperia USA Inc.

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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

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D5V0L1B2WS-7
Diodes Incorporated
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