Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ150A-E3/52

Part No.:
SMBJ150A-E3/52
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ150A-E3/52.pdf
Description:
TVS DIODE 150VWM 243VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,890

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ150A-E3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode designed for robust overvoltage protection in power rails and signal lines. It features a 150 V stand-off voltage (VWM), 167–185 V breakdown voltage (VBR) at 1 mA, 243 V maximum clamping voltage (VC) at 2.5 A peak pulse current (IPPM), and 600 W peak pulse power rating with a 10/1000 µs waveform - deployed in industrial motor drives to safeguard MOSFET gate drivers against inductive switching transients.

For engineers reviewing the SMBJ150A-E3/52 datasheet, SMBJ150A-E3/52 pinout, SMBJ150A-E3/52 application, or SMBJ150A-E3/52 equivalent, key selection criteria include clamping voltage margin relative to protected IC's absolute maximum rating, thermal derating above 25 °C ambient, unidirectional polarity alignment with DC rail topology, and SMB (DO-214AA) package compatibility with automated SMT placement and IPC Class 2 whisker-resistant soldering requirements.

Technical Context

This TVS operates as a silicon avalanche diode with glass-passivated junction, triggering conduction when reverse voltage exceeds its specified VBR range. Its low incremental surge resistance ensures minimal voltage overshoot during fast transients, while the 10/1000 µs waveform rating reflects standardized IEC 61000-4-5 surge immunity testing conditions.

The device exhibits a +0.108 %/°C temperature coefficient of VBR, enabling predictable breakdown shift across -55 °C to +150 °C operating junction range. With 100 °C/W junction-to-ambient thermal resistance and 5.0 W steady-state power dissipation capability, it relies on PCB copper pad area (0.2" × 0.2") for effective heat spreading under repetitive surge conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VWM (Stand-off Voltage) 150 V - Maximum continuous reverse voltage before significant leakage; sets upper limit for protected circuit DC bias.
VBR (Breakdown Voltage) 167–185 V at 1 mA - Confirmed avalanche initiation range; defines minimum overvoltage threshold for clamping action.
VC (Clamping Voltage) 243 V at IPPM = 2.5 A - Peak voltage seen by downstream circuit during 10/1000 µs surge; determines safe margin vs. IC absolute max rating.
PPPM (Peak Pulse Power) 600 W - Sustained energy absorption capacity per transient event; validated per IEC 61000-4-5 waveform definition.
ID (Reverse Leakage) 1.0 µA max at VWM - Ensures negligible standby current draw in high-impedance sensor or control circuits.
TJ max. +150 °C - Maximum allowable junction temperature; supports operation in enclosed industrial enclosures without forced cooling.
Package SMB (DO-214AA) - Standardized 2-pin surface-mount outline with cathode band marking; compatible with J-STD-020 MSL Level 1 reflow profile.

Pinout & Package

Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads, compliant with UL 94 V-0 flammability rating and JESD 201 Class 2 whisker resistance. Cathode indicated by band marking on body.

Pin/Terminal Circuit Role Design Meaning
Anode Low-side reference node Connected to ground or lowest potential point in protected circuit; completes conduction path during reverse-biased transient.
Cathode High-side surge input node Connected to line being protected (e.g., 150 V DC bus); carries full transient current into anode during clamping event.

Key Features

Feature Design Value
600 W peak pulse power (10/1000 µs) Enables single-event suppression of high-energy surges common in industrial motor control and power supply outputs.
243 V clamping voltage at 2.5 A Provides ≥15 % margin below typical 270 V DC-link absolute maximum ratings for IGBT/MOSFET gate drivers.
Glass passivated chip junction Ensures stable VBR and low leakage over 10+ year field life in humid or thermally cycled environments.
MSL Level 1 moisture sensitivity Allows unlimited floor life and standard reflow without baking; simplifies SMT manufacturing flow.
RoHS-compliant, commercial grade (E3 suffix) Meets EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow standards for lead-free assembly.

Applications

Industrial Motor Drives DC Power Supply Outputs

Use Scenario: Protection of IGBT gate driver ICs against voltage spikes induced by rapid turn-off of high-current motor windings.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between gate driver output and ground to clamp negative-going transients and prevent gate oxide rupture.

Use Value: Limits transient voltage to 243 V, maintaining >20 V safety margin below gate driver's -20 V absolute minimum rating.

Use Scenario: Safeguarding downstream DC-DC converter inputs connected to 150 V industrial power supplies subject to load dump events.

IC Role / Device Role / Timing Role: Standoff-rated TVS installed across input terminals to shunt surge energy before it reaches primary-side controller ICs.

Use Value: Absorbs up to 600 W of transient energy without degradation, preserving long-term reliability of isolated feedback optocouplers.

Telecom Line Cards Automotive Body Control Modules

Use Scenario: Shielding Ethernet PHY interface power pins from ESD and lightning-induced surges on outdoor telecom infrastructure.

IC Role / Device Role / Timing Role: High-VWM TVS integrated into front-end protection network to prevent latch-up in 10/100BASE-TX transceivers.

Use Value: Delivers sub-nanosecond response time and <1 µA leakage at 150 V, avoiding signal integrity impact on 100 MHz differential pairs.

Use Scenario: Protecting LIN bus transceiver power rails in body control units exposed to battery disconnect transients.

IC Role / Device Role / Timing Role: Unidirectional clamping device placed between VBAT and GND to suppress positive-going spikes up to 180 V.

Use Value: Maintains 1.0 µA max reverse leakage at 150 V, preventing excessive quiescent current drain in always-on vehicle modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
Littelfuse SMAJ150A Same VWM (150 V), slightly higher VC (246 V), identical SMB package and 600 W rating. Validated for UL 497B telecom surge compliance; less common in automotive-qualified BOMs. Select when UL recognition is prioritized over AEC-Q101 qualification; verify layout clearance for Littelfuse's slightly longer body.
ON Semiconductor 1.5SMC150A Identical electrical specs (VWM, VBR, VC, PPPM), same SMB footprint, but rated for 150 °C TJ max and MSL Level 1. Widely used in industrial automation BOMs with documented long-term supply continuity. Preferred for multi-source procurement strategies where second-source validation is required without layout change.

Compared with SMBJ150A-E3/52, SMAJ150A offers stronger UL certification leverage but lacks AEC-Q101 qualification, while 1.5SMC150A provides identical performance with broader industrial supply chain adoption - both require no PCB revision but differ in qualification scope and regional compliance documentation.

Availability

SMBJ150A-E3/52 is available at Aetrix Electronics and suitable for industrial motor drives, telecom line cards, and DC power supply outputs requiring stable component supply, RoHS-compliant packaging, and repeatable surge immunity performance across production batches.

Supply support for SMBJ150A-E3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and application-specific optimization.

The SMBJ series was engineered for high-energy transient suppression in harsh environments, targeting industrial, telecom, and transportation systems where consistent clamping behavior and long-term stability are critical.

FAQ

What is the maximum clamping voltage of SMBJ150A-E3/52 under standard test conditions?

The SMBJ150A-E3/52 has a maximum clamping voltage (VC) of 243 V when subjected to a 10/1000 µs waveform with a peak pulse current (IPPM) of 2.5 A. This value is measured at TA = 25 °C using the recommended 0.2" × 0.2" copper pad layout per Vishay Document 88392. The SMBJ150A-E3/52 maintains this clamping performance across its full operating temperature range, with minor derating above 25 °C ambient.

Does SMBJ150A-E3/52 meet automotive qualification standards?

No, SMBJ150A-E3/52 is a commercial-grade part with RoHS compliance (E3 suffix) but not AEC-Q101 qualified. For automotive applications, Vishay offers the SMBJ150AHE3 variant (HE3 suffix), which adds AEC-Q101 qualification and halogen-free construction. The SMBJ150A-E3/52 remains suitable for industrial and telecom use cases where AEC-Q101 is not mandated.

How does the temperature coefficient affect SMBJ150A-E3/52's breakdown voltage?

The SMBJ150A-E3/52 has a VBR temperature coefficient of +0.108 %/°C, meaning its breakdown voltage increases linearly with junction temperature. At 125 °C junction temperature, VBR rises approximately 10.8 % above its 25 °C value (167–185 V), reaching ~185–205 V. This positive drift ensures safer margin expansion under thermal stress, and the SMBJ150A-E3/52 remains within specification up to +150 °C TJ.

Can SMBJ150A-E3/52 be used in bidirectional protection circuits?

No, SMBJ150A-E3/52 is a unidirectional TVS diode, identifiable by its cathode band marking. Bidirectional operation requires the CA-suffixed variant (e.g., SMBJ150CA). Using SMBJ150A-E3/52 in AC or bipolar signal paths would result in forward conduction during negative half-cycles, causing failure. Always match polarity: SMBJ150A-E3/52 for DC rails with defined ground reference, SMBJ150CA for symmetrical surge protection.

What is the recommended PCB pad layout for optimal thermal performance of SMBJ150A-E3/52?

Vishay specifies a minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pad area for each terminal of SMBJ150A-E3/52 to achieve rated 600 W pulse power and 5.0 W steady-state dissipation. These pads must be directly connected to internal ground/power planes via multiple thermal vias. Deviating from this layout reduces thermal resistance and risks exceeding the 150 °C maximum junction temperature during repetitive surges. The SMBJ150A-E3/52 datasheet Figure 2 provides exact dimensional guidance.

SMBJ150A-E3/52 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
150V
Voltage - Breakdown (Min):
167V
Voltage - Clamping (Max) @ Ipp:
243V
Current - Peak Pulse (10/1000µs):
2.5A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ150A-E3/52 FAQ

1.How can I place an order for SMBJ150A-E3/52 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ150A-E3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ150A-E3/52 reliable?

The price and inventory of SMBJ150A-E3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ150A-E3/52 is usually 5 days.

3.What payment methods are accepted for SMBJ150A-E3/52?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ150A-E3/52 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ150A-E3/52?

SMBJ150A-E3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ150A-E3/52 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ150A-E3/52?

For technical support, including SMBJ150A-E3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ150A-E3/52 requirements.

6.How does Aetrix verify that SMBJ150A-E3/52 is sourced from the original manufacturer or authorized distributors?

All SMBJ150A-E3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ150A-E3/52 meets industry standards.

7.What is the process for return or replacement of SMBJ150A-E3/52?

All SMBJ150A-E3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ150A-E3/52, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ150A-E3/52 part is unused and in its original packaging.

Return procedure for SMBJ150A-E3/52:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ150A-E3/52 Tags

  • SMBJ150A-E3/52
  • SMBJ150A-E3/52 PDF
  • SMBJ150A-E3/52 Datasheet
  • SMBJ150A-E3/52 Specifications
  • SMBJ150A-E3/52 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ150A-E3/52
  • Buy SMBJ150A-E3/52
  • SMBJ150A-E3/52 Price
  • SMBJ150A-E3/52 Distributor
  • SMBJ150A-E3/52 Supplier
  • SMBJ150A-E3/52 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER