Vishay General Semiconductor - Diodes Division SMBJ150A-E3/5B
- Part No.:
- SMBJ150A-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ150A-E3/5B.pdf
- Description:
- TVS DIODE 150VWM 243VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ150A-E3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode designed for robust overvoltage protection of sensitive electronics. It features a 150 V stand-off voltage (VWM), 167–185 V breakdown voltage (VBR) at 1 mA, clamps transients to ≤243 V at 2.5 A peak pulse current (IPPM), and delivers 600 W peak pulse power (10/1000 µs waveform). It is deployed in industrial motor drives to protect IGBT gate drivers from inductive switching surges.
For engineers reviewing the SMBJ150A-E3/5B datasheet, SMBJ150A-E3/5B pinout, SMBJ150A-E3/5B application, or SMBJ150A-E3/5B equivalent, key selection criteria include clamping voltage margin relative to protected IC's absolute maximum rating, thermal resistance (RθJA = 100 °C/W), unidirectional polarity marking (cathode band), and RoHS-compliant matte tin plating per J-STD-002.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: under normal bias it presents high impedance (<1 µA leakage at 150 V), then rapidly avalanches below its 167 V minimum breakdown threshold to divert surge energy away from downstream circuitry. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low incremental surge resistance.
The device uses a single-junction avalanche structure with no internal series impedance - enabling sub-nanosecond response time and direct integration into DC power rails or signal lines without external current-limiting resistors. Its SMB (DO-214AA) package supports automated placement and meets MSL Level 1 reflow requirements (260 °C peak).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 150 V - Maximum continuous reverse operating voltage before significant leakage; sets upper limit for protected line's nominal DC rail. |
| VBR (min/max) | 167 V / 185 V at 1 mA - Confirmed breakdown range ensures reliable triggering above VWM with margin against tolerance drift. |
| VC @ IPPM | ≤243 V at 2.5 A - Clamping voltage defines worst-case overvoltage seen by protected load during 10/1000 µs surge. |
| PPPM | 600 W - Peak pulse power handling capacity determines survivability against standardized lightning/surge waveforms. |
| IFSM | 100 A - Non-repetitive forward surge rating validates robustness against accidental reverse-bias misapplication or fault currents. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance informs derating requirements on standard PCB copper pads (0.2" × 0.2"). |
| Package | SMB (DO-214AA) - Low-profile surface-mount outline with cathode band marking; compatible with JEDEC-standard pick-and-place equipment. |
Pinout & Package
Package: SMB (DO-214AA), 2-terminal surface-mount case with molded epoxy body, matte tin-plated leads, and visible cathode band indicating terminal 1 (cathode). Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Terminal 1 (banded end) | Cathode | Connected to system ground or lower-potential node; conducts avalanche current during positive transients on anode side. |
| Terminal 2 (non-banded end) | Anode | Connected to protected line (e.g., 150 V DC bus); voltage rise above VBR triggers clamping action to cathode. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Validated surge energy absorption capability for IEC 61000-4-5 Level 4 compliance in industrial environments. |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (<1 ns response), critical for protecting MOSFET/IGBT gates. |
| Glass passivated junction | Ensures long-term parameter stability and reduced leakage drift across temperature (-55 °C to +150 °C). |
| MSL Level 1 (260 °C peak) | Enables single-pass lead-free reflow without popcorn cracking or delamination risk. |
| RoHS-compliant, matte tin plating | Guarantees solderability per J-STD-002 and whisker resistance per JESD 201 Class 2. |
Applications
| Industrial Motor Drives | Telecom Power Supplies |
|---|---|
|
Use Scenario: Protection of IGBT gate driver ICs from turn-off voltage spikes induced by high-di/dt in motor windings. IC Role / Device Role / Timing Role: Shunt clamping element placed between gate and source, triggered within nanoseconds to clamp spikes below driver's 20 V absolute max rating. Use Value: Prevents cumulative gate oxide damage and catastrophic failure during repeated PWM switching cycles. |
Use Scenario: Input-stage surge suppression on -48 V DC telecom rectifier outputs exposed to lightning-induced surges on distribution lines. IC Role / Device Role / Timing Role: Primary overvoltage clamp on bulk DC bus, activated before downstream DC-DC converters experience overvoltage stress. Use Value: Maintains system uptime by absorbing 600 W surges without degradation, meeting GR-1089-CORE Level 3 requirements. |
| Automotive Body Control Modules | Industrial PLC I/O Cards |
|
Use Scenario: Protection of LIN bus transceivers connected to 12 V battery rails subject to load dump transients (ISO 16750-2). IC Role / Device Role / Timing Role: Unidirectional TVS placed between LIN line and ground, clamping negative-going transients to safe levels. Use Value: Enables AEC-Q101 qualification path when ordered as HE3 variant; maintains signal integrity during 100 V/100 ms load dump events. |
Use Scenario: Analog input channel protection on 24 V DC-powered PLC modules interfacing with field sensors in factory automation. IC Role / Device Role / Timing Role: Front-end transient suppressor on sensor signal lines, limiting voltage excursions to <243 V during ESD or inductive kick events. Use Value: Eliminates need for additional series current-limiting resistors, preserving signal-to-noise ratio and measurement accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ150A-M3/5B | Halogen-free, RoHS-compliant variant with identical electrical specs and SMB package. | No functional difference; selected where halogen-free material compliance is mandated (e.g., EU public infrastructure projects). | Choose M3/5B when halogen-free certification is required; otherwise E3/5B offers standard commercial-grade compliance. |
| SMCJ150A-E3/57 | Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package with higher IPPM (4.1 A) and PPPM (1500 W). | Used where higher surge energy (e.g., outdoor AC mains interfaces) exceeds SMBJ150A-E3/5B's 600 W rating. | Select SMCJ150A-E3/57 only if system-level surge testing requires >600 W headroom; SMBJ150A-E3/5B suffices for most board-level protection. |
Compared with SMBJ150A-M3/5B, the SMBJ150A-E3/5B provides identical protection performance with standard RoHS compliance, while SMCJ150A-E3/57 trades compact size for higher surge capacity - making SMBJ150A-E3/5B optimal for space-constrained industrial PCBs requiring certified 600 W clamping.
Availability
SMBJ150A-E3/5B is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, automotive body control modules, and PLC I/O cards requiring stable component supply, consistent RoHS compliance, and verified surge immunity.
Supply support for SMBJ150A-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and application-specific optimization.
The SMBJ series was engineered for high-reliability board-level transient suppression in harsh environments - balancing compact SMB packaging, 600 W surge capability, and tight VBR tolerances for predictable clamping behavior.
FAQ
What is the maximum clamping voltage of SMBJ150A-E3/5B at its rated peak pulse current?
The SMBJ150A-E3/5B has a maximum clamping voltage (VC) of 243 V when subjected to its specified peak pulse current of 2.5 A using the 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ150A-E3/5B maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C).
Is SMBJ150A-E3/5B suitable for bidirectional transient protection?
No, SMBJ150A-E3/5B is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. For bidirectional protection, Vishay specifies the "CA" suffix (e.g., SMBJ150CA). Using SMBJ150A-E3/5B in bidirectional applications would leave the reverse-polarity transient path unprotected. Always verify polarity designation in the ordering code before design-in.
What is the thermal resistance and how does it affect SMBJ150A-E3/5B's power derating?
The SMBJ150A-E3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" copper pads. This means each watt of sustained power dissipation raises the junction temperature by 100 °C above ambient. Since its maximum junction temperature is 150 °C, continuous power must be limited to ≤0.5 W at 100 °C ambient - confirming its role as a transient-only device, not a steady-state clamp.
Does SMBJ150A-E3/5B meet automotive qualification standards?
The base SMBJ150A-E3/5B is commercial-grade and not AEC-Q101 qualified. However, Vishay offers the automotive variant SMBJ150AHE3_B/I (with HE3 suffix), which undergoes AEC-Q101 stress testing and is marked with revision code "B". For automotive applications requiring qualification, specify the HE3 or HM3 version - the SMBJ150A-E3/5B itself is intended for industrial and telecom use.
How is polarity identified on the SMBJ150A-E3/5B package?
Polarity is marked by a distinct cathode band on the SMB (DO-214AA) package body - the banded end is Terminal 1 (cathode), and the non-banded end is Terminal 2 (anode). This marking aligns with JEDEC DO-214AA standards and is visible under standard optical inspection. Correct orientation is critical: reversing SMBJ150A-E3/5B in-circuit disables its clamping function on positive transients.
SMBJ150A-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 150V
- Voltage - Breakdown (Min):
- 167V
- Voltage - Clamping (Max) @ Ipp:
- 243V
- Current - Peak Pulse (10/1000µs):
- 2.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ150A-E3/5B FAQ
1.How can I place an order for SMBJ150A-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ150A-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ150A-E3/5B reliable?
The price and inventory of SMBJ150A-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ150A-E3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ150A-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ150A-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ150A-E3/5B?
SMBJ150A-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ150A-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ150A-E3/5B?
For technical support, including SMBJ150A-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ150A-E3/5B requirements.
6.How does Aetrix verify that SMBJ150A-E3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ150A-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ150A-E3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ150A-E3/5B?
All SMBJ150A-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ150A-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ150A-E3/5B part is unused and in its original packaging.
Return procedure for SMBJ150A-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ150A-E3/5B Tags

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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