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Vishay General Semiconductor - Diodes Division SMBJ150AHE3_B/H
- Part No.:
- SMBJ150AHE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ150AHE3_B/H.pdf
- Description:
- 600W,150V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
SMBJ150AHE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 150 V stand-off voltage (VWM), 167–185 V breakdown voltage (VBR) at 1 mA, 243 V maximum clamping voltage (VC) at 2.5 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial motor drives and telecom power supplies.
For engineers reviewing the SMBJ150AHE3_B/H datasheet, SMBJ150AHE3_B/H pinout, SMBJ150AHE3_B/H application, or SMBJ150AHE3_B/H equivalent, key selection criteria include clamping performance under 2.5 A surge, thermal resistance (RθJA = 100 °C/W), AEC-Q101 qualification status, unidirectional polarity marking, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a voltage-clamping protection device in series with sensitive downstream circuitry, conducting only when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable leakage (<1.0 µA at VWM) and fast response time (<1.0 ps), enabling suppression of ESD, lightning-induced surges, and inductive switching spikes before damage occurs.
The SMBJ150AHE3_B/H is rated for 150 °C maximum junction temperature and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. Its matte tin-plated leads comply with J-STD-002 and JESD 22-B102 solderability standards, and it is RoHS-compliant and AEC-Q101 qualified - confirming suitability for automotive power modules and industrial control units requiring long-term reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 150 V - Maximum continuous reverse operating voltage before significant conduction begins; defines safe operating margin below clamping threshold. |
| VBR (Breakdown Voltage) | 167–185 V at 1 mA - Confirmed minimum/maximum reverse breakdown range; ensures predictable turn-on across production lots and temperature. |
| VC (Clamping Voltage) | 243 V at IPPM = 2.5 A - Measured peak voltage across device during 10/1000 µs transient; determines maximum stress imposed on protected IC or MOSFET. |
| PPPM (Peak Pulse Power) | 600 W - Sustained energy absorption capability under standardized 10/1000 µs waveform; enables robust protection against IEC 61000-4-5 Level 3 surges. |
| ID (Reverse Leakage) | ≤1.0 µA at VWM - Ultra-low leakage preserves system efficiency and prevents false triggering in high-impedance sensor bias networks. |
| TJ max. | 150 °C - Maximum allowable junction temperature; supports operation in enclosed enclosures or near heat-generating components without derating. |
| RθJA | 100 °C/W - Thermal resistance from junction to ambient on standard 0.2" × 0.2" copper pads; informs PCB thermal layout requirements for sustained power dissipation. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with cathode band marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); terminals are matte tin-plated for lead-free soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference node | Connected to ground or low-side return path; establishes reference for unidirectional clamping action toward cathode. |
| Cathode | Clamping output / Surge current sink | Marked with band; connects to protected line (e.g., 150 V rail or sensor input); conducts surge current to ground during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive power electronics including body control modules and ADAS power rails where reliability under thermal cycling and vibration is mandatory. |
| 600 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 surge immunity up to 1 kV open-circuit / 0.5 kA short-circuit test levels without degradation. |
| Glass passivated junction | Ensures stable VBR tolerance and low leakage across -55 °C to +150 °C, critical for outdoor telecom equipment and industrial PLCs. |
| MSL Level 1 (260 °C peak) | Enables single-pass lead-free reflow without moisture-related popcorning, reducing manufacturing yield loss in high-volume SMT lines. |
| Low incremental surge resistance | Minimizes clamping voltage overshoot during fast-rising transients (e.g., relay coil de-energization), improving protection margin for 3.3 V or 5 V logic interfaces. |
Applications
| Industrial Motor Drives | Telecom DC Power Distribution |
|---|---|
|
Use Scenario: Protection of gate drivers and feedback sensing circuits against flyback voltage spikes from IGBT/MOSFET switching in variable-frequency drives. IC Role / Device Role / Timing Role: Unidirectional TVS clamping element placed across DC bus or gate-source nodes to limit transient overvoltage to safe levels. Use Value: Prevents cumulative gate oxide damage and latch-up in isolated gate drivers by clamping spikes to ≤243 V while maintaining <1 µA leakage at 150 V nominal rail. |
Use Scenario: Input-stage surge protection on -48 V telecom rectifier outputs feeding backplane power distribution networks. IC Role / Device Role / Timing Role: Primary overvoltage clamp on secondary-side DC output, coordinated with upstream MOVs and fuses for staged protection. Use Value: Absorbs 600 W surge energy without failure, preserving downstream DC-DC converters and FPGA power sequencing integrity during lightning-induced line surges. |
| Automotive Body Control Modules | Industrial Sensor Signal Conditioning |
|
Use Scenario: Protection of LIN bus transceivers and microcontroller I/O pins against load dump and jump-start transients in 12 V vehicle subsystems. IC Role / Device Role / Timing Role: Unidirectional TVS connected between LIN line and chassis ground, leveraging AEC-Q101 qualification for automotive-grade durability. Use Value: Clamps 12 V line transients to ≤243 V within nanoseconds, preventing permanent damage to 5 V tolerant transceiver inputs while meeting ISO 7637-2 Pulse 5a requirements. |
Use Scenario: Protection of analog front-end inputs (e.g., 4–20 mA loop receivers or RTD bridges) in factory automation sensors exposed to EMI and cable coupling. IC Role / Device Role / Timing Role: Low-leakage (≤1 µA) clamping device placed at signal entry point before instrumentation amplifier, minimizing offset error impact. Use Value: Maintains signal integrity with sub-µA leakage at 150 V common-mode offset while suppressing >1 kV ESD events per IEC 61000-4-2 Level 4 without affecting 16-bit ADC resolution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ150AHM3_B/H | Halogen-free, RoHS-compliant, AEC-Q101 qualified - identical electrical specs but different material composition. | Required where halogen-free compliance is mandated (e.g., EU public infrastructure projects or green procurement policies). | Select SMBJ150AHM3_B/H when halogen-free materials are contractually required; otherwise SMBJ150AHE3_B/H offers same protection performance at standard commercial grade. |
| SMCJ150AHE3_A/H | Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package with higher RθJA (60 °C/W) and 1500 W PPPM rating. | Better suited for higher-energy surge environments (e.g., outdoor AC/DC converters) where board space allows larger footprint. | Choose SMCJ150AHE3_A/H only if 1500 W surge handling is needed and PCB layout accommodates 7.11 mm × 6.22 mm footprint; SMBJ150AHE3_B/H remains optimal for space-constrained 150 V rail protection. |
Compared with SMBJ150AHM3_B/H, the SMBJ150AHE3_B/H offers identical clamping and thermal performance with standard RoHS compliance; compared with SMCJ150AHE3_A/H, it trades peak power headroom (600 W vs. 1500 W) for 40 % smaller PCB area and tighter placement tolerance in dense power modules.
Availability
SMBJ150AHE3_B/H is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC power distribution, automotive body control modules, and industrial sensor signal conditioning requiring stable component supply across multi-year production cycles.
Supply support for SMBJ150AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, precision, and automotive-grade qualification.
The SMBJ series was developed specifically for high-reliability transient suppression in space-constrained, high-voltage industrial and automotive applications - delivering consistent clamping performance with AEC-Q101 validation and MSL Level 1 assembly compatibility.
FAQ
What is the maximum clamping voltage of SMBJ150AHE3_B/H at its rated peak pulse current?
The SMBJ150AHE3_B/H has a maximum clamping voltage (VC) of 243 V at 2.5 A peak pulse current (IPPM) under the 10/1000 µs waveform condition. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring downstream ICs rated for ≤250 V absolute maximum survive transient exposure. The SMBJ150AHE3_B/H maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C).
Is SMBJ150AHE3_B/H suitable for automotive applications?
Yes, SMBJ150AHE3_B/H is AEC-Q101 qualified, confirming its suitability for automotive electronic systems including body control modules, infotainment power supplies, and ADAS sensor interfaces. The qualification covers stress testing for temperature cycling, humidity, mechanical shock, and surge immunity - validating reliability under real-world vehicle conditions. Its unidirectional configuration and 150 V stand-off make it appropriate for protecting 12 V and 24 V subsystems against load dump and jump-start transients, provided layout follows Vishay's recommended 5.0 mm × 5.0 mm copper pad design.
What does the "HE3" suffix indicate in SMBJ150AHE3_B/H?
The "HE3" suffix in SMBJ150AHE3_B/H denotes RoHS-compliant construction with AEC-Q101 qualification - distinguishing it from commercial-grade "E3" variants and halogen-free "HM3" versions. The "H" in the full part number specifies the preferred packaging code (7" tape-and-reel, 750 units per reel), while "B/H" indicates the revision level and reel size configuration. This suffix set confirms the device meets both environmental compliance (RoHS Directive 2011/65/EU) and automotive reliability standards without requiring material content waivers.
How does SMBJ150AHE3_B/H compare to bidirectional TVS diodes like SMBJ150CA?
SMBJ150AHE3_B/H is unidirectional and features a cathode band marking, making it suitable for DC line protection where polarity is fixed (e.g., +150 V rails). In contrast, SMBJ150CA is bidirectional with no polarity marking and symmetric clamping in both directions - ideal for AC signal lines or differential buses. The SMBJ150AHE3_B/H exhibits lower leakage (<1.0 µA at VWM) than SMBJ150CA (≤2.0 µA), and its forward voltage drop (VF ≤ 3.5 V at 50 A) enables use in crowbar-like fault detection schemes not possible with bidirectional types.
What PCB layout guidelines apply to SMBJ150AHE3_B/H for optimal thermal and surge performance?
For optimal performance, SMBJ150AHE3_B/H must be mounted on minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as specified in Vishay's datasheet Figure 6. These pads reduce thermal resistance (RθJA = 100 °C/W) and improve surge current handling by lowering inductance and spreading heat. Avoid narrow traces between the TVS and protected node - use direct, low-inductance routing to minimize voltage overshoot during fast transients. Ground plane connectivity beneath the SMB package is recommended to enhance heat dissipation and EMI suppression without compromising creepage distance requirements.
SMBJ150AHE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 150V
- Voltage - Breakdown (Min):
- 167V
- Voltage - Clamping (Max) @ Ipp:
- 243V
- Current - Peak Pulse (10/1000µs):
- 2.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ150AHE3_B/H FAQ
1.How can I place an order for SMBJ150AHE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ150AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ150AHE3_B/H reliable?
The price and inventory of SMBJ150AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ150AHE3_B/H is usually 5 days.
3.What payment methods are accepted for SMBJ150AHE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ150AHE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ150AHE3_B/H?
SMBJ150AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ150AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ150AHE3_B/H?
For technical support, including SMBJ150AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ150AHE3_B/H requirements.
6.How does Aetrix verify that SMBJ150AHE3_B/H is sourced from the original manufacturer or authorized distributors?
All SMBJ150AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ150AHE3_B/H meets industry standards.
7.What is the process for return or replacement of SMBJ150AHE3_B/H?
All SMBJ150AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ150AHE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ150AHE3_B/H part is unused and in its original packaging.
Return procedure for SMBJ150AHE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ150AHE3_B/H Tags
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