My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ150AHM3_B/H
- Part No.:
- SMBJ150AHM3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ150AHM3_B/H.pdf
- Description:
- 600W,150V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,227
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ150AHM3_B/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 150 V stand-off voltage (VWM), 167–185 V breakdown voltage (VBR) at 1 mA, 600 W peak pulse power (10/1000 µs), clamping voltage of 243 V at 2.5 A, and operates across -55 °C to +150 °C junction temperature range.
For engineers reviewing the SMBJ150AHM3_B/H datasheet, SMBJ150AHM3_B/H pinout, SMBJ150AHM3_B/H application, or SMBJ150AHM3_B/H equivalent, this part serves as a halogen-free, RoHS-compliant, AEC-Q101-qualified TVS for automotive power supply protection, industrial sensor interface surge hardening, and telecom line-level transient suppression where stable clamping and low leakage (<1 µA at VWM) are critical.
Technical Context
This unidirectional TVS diode operates by avalanche breakdown above its reverse stand-off voltage (150 V), rapidly clamping transients to ≤243 V at rated peak current. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low incremental surge resistance, enabling consistent response to repetitive 10/1000 µs surges at 0.01% duty cycle.
The device is optimized for PCB-level protection of MOSFET gates, microcontroller I/O, and DC input stages against inductive switching spikes and lightning-induced surges. Its MSL Level 1 rating and matte tin-plated leads support lead-free reflow assembly without solderability degradation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 150 V - Maximum continuous reverse operating voltage before significant leakage; defines safe DC rail protection threshold. |
| VBR min/max | 167 V / 185 V at 1 mA - Confirmed breakdown range ensuring reliable turn-on margin above VWM. |
| VC @ IPPM | 243 V at 2.5 A - Clamped voltage during 10/1000 µs surge; determines maximum stress on downstream circuitry. |
| PPPM | 600 W - Peak pulse power handling capability with standard 10/1000 µs waveform; enables IEC 61000-4-5 level 4 compliance. |
| ID @ VWM | ≤1.0 µA - Reverse leakage at rated stand-off voltage; ensures minimal standby power loss and signal integrity. |
| TJ max | +150 °C - Maximum junction temperature; supports operation in under-hood automotive and high-ambient industrial environments. |
| Package | SMB (DO-214AA) - Standardized 2-pin surface-mount outline with 5.21 mm × 4.06 mm footprint and 2.20 mm height; compatible with automated pick-and-place. |
Pinout & Package
Package: SMB (DO-214AA), unidirectional polarity with cathode band marking on one end. Matte tin-plated leads meet J-STD-002 and JESD 22-B102 solderability standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lowest potential node; completes conduction path during transient clamp event. |
| Cathode | High-side transient input terminal | Connected to protected line (e.g., 150 V DC rail); avalanche conduction initiates here when voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables single-event suppression of high-energy transients per IEC 61000-4-5 without thermal runaway. |
| AEC-Q101 qualified (HM3 suffix) | Validated for automotive powertrain and body electronics applications requiring zero-defect reliability under thermal cycling and vibration. |
| Halogen-free & RoHS-compliant | Meets EU Directive 2011/65/EU and IPC-1752A material declaration requirements for green manufacturing. |
| MSL Level 1 (260 °C peak) | Supports standard lead-free reflow profiles without moisture-related popcorning or delamination. |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes overvoltage overshoot during fast transients, reducing risk of downstream IC latch-up or gate oxide damage. |
Applications
| Automotive Power Supply Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: 12 V/24 V battery-fed ECUs exposed to load-dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and LDO input to clamp surges up to ±100 V. Use Value: Limits voltage seen by downstream regulators to ≤243 V, preventing burnout of 36 V-rated input capacitors and PMICs. |
Use Scenario: 4–20 mA current-loop sensors in factory automation subject to ESD and cable-coupled surges. IC Role / Device Role / Timing Role: TVS mounted across sensor output terminals to shunt transients before reaching analog front-end op-amps. Use Value: Maintains signal integrity with <1 µA leakage at 24 V nominal, avoiding offset drift in precision current measurement. |
| Telecom DC Feeder Line Protection | Motor Drive DC Bus Snubbing |
|
Use Scenario: Remote radio unit power feeds in 4G/5G base stations experiencing lightning-induced surges on outdoor cables. IC Role / Device Role / Timing Role: Primary TVS on +48 V DC input stage, coordinated with secondary GDT and MOV stages. Use Value: Fast 1 ns response time clamps transients before propagation into DC/DC converters, preserving system uptime. |
Use Scenario: IGBT gate driver supply rails in servo drives subjected to inductive kickback from motor commutation. IC Role / Device Role / Timing Role: TVS placed across isolated DC/DC output to protect gate drivers from reflected voltage spikes. Use Value: Withstands 100 A non-repetitive forward surge (IFSM), preventing catastrophic failure during fault conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ150AHE3_B/H | Same electrical specs but RoHS-compliant commercial-grade (non-halogen-free); no AEC-Q101 qualification. | Lacks automotive qualification; suitable for industrial/commercial designs not requiring AEC-Q101 traceability. | Select when halogen content is unrestricted and automotive qualification is unnecessary. |
| SMCJ150A-HM3 | Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package; higher thermal mass and RθJA = 40 °C/W vs. 100 °C/W. | Better power dissipation for high-duty-cycle surges; requires larger PCB area and different pad layout. | Choose when sustained surge energy exceeds SMBJ150AHM3_B/H's 600 W rating or board space permits larger footprint. |
Compared with SMBJ150AHM3_B/H, SMBJ150AHE3_B/H offers identical protection performance without halogen-free assurance or automotive qualification, while SMCJ150A-HM3 delivers superior thermal handling in a larger package-making the choice dependent on qualification needs, board area constraints, and surge repetition rate.
Availability
SMBJ150AHM3_B/H is available at Aetrix Electronics and suitable for automotive power systems, industrial sensor interfaces, and telecom DC feeder protection requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for SMBJ150AHM3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-reliability transient suppression in harsh environments-targeting automotive, industrial, and telecom applications where precise clamping, low leakage, and AEC-Q101 validation are mandatory.
FAQ
What is the maximum clamping voltage of SMBJ150AHM3_B/H at its rated peak pulse current?
The SMBJ150AHM3_B/H has a maximum clamping voltage (VC) of 243 V at its specified peak pulse current of 2.5 A using the 10/1000 µs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuitry during transient events. The SMBJ150AHM3_B/H maintains this clamping performance across its full operating temperature range.
Is SMBJ150AHM3_B/H suitable for automotive applications?
Yes, SMBJ150AHM3_B/H is AEC-Q101 qualified and manufactured with halogen-free, RoHS-compliant materials, making it suitable for automotive powertrain, body control, and infotainment systems. Its -55 °C to +150 °C operating junction temperature range, MSL Level 1 rating, and validated surge robustness align with automotive environmental and reliability requirements. The SMBJ150AHM3_B/H meets these criteria without derating.
What does the "HM3" suffix indicate in SMBJ150AHM3_B/H?
The "HM3" suffix in SMBJ150AHM3_B/H denotes halogen-free, RoHS-compliant construction with AEC-Q101 qualification. It distinguishes this variant from commercial-grade "E3" (RoHS only) and "HE3" (AEC-Q101, non-halogen-free) versions. The "B/H" indicates packaging in 7″ tape-and-reel format with 750 units per reel. The SMBJ150AHM3_B/H uses matte tin-plated leads compliant with J-STD-002.
How does SMBJ150AHM3_B/H compare to bidirectional TVS diodes like SMBJ150CA?
SMBJ150AHM3_B/H is unidirectional and intended for DC line protection where polarity is fixed, offering lower leakage (<1 µA) and tighter VBR tolerance than bidirectional variants. In contrast, SMBJ150CA provides symmetrical clamping for AC or polarity-agnostic signals but exhibits higher ID (up to 2 µA) and reduced VBR consistency. The SMBJ150AHM3_B/H is not interchangeable with SMBJ150CA without circuit redesign due to polarity dependency.
What is the thermal resistance of SMBJ150AHM3_B/H, and how does it affect power handling?
The SMBJ150AHM3_B/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2″ × 0.2″ copper pads. This limits its steady-state power dissipation to 5.0 W at TA = 50 °C. While its 600 W peak pulse rating applies only to short-duration transients (≤50 ms), sustained surge repetition requires thermal derating per Figure 2 in the datasheet. The SMBJ150AHM3_B/H relies on PCB copper area-not heatsinks-for transient thermal management.
SMBJ150AHM3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 150V
- Voltage - Breakdown (Min):
- 167V
- Voltage - Clamping (Max) @ Ipp:
- 243V
- Current - Peak Pulse (10/1000µs):
- 2.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ150AHM3_B/H FAQ
1.How can I place an order for SMBJ150AHM3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ150AHM3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ150AHM3_B/H reliable?
The price and inventory of SMBJ150AHM3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ150AHM3_B/H is usually 5 days.
3.What payment methods are accepted for SMBJ150AHM3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ150AHM3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ150AHM3_B/H?
SMBJ150AHM3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ150AHM3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ150AHM3_B/H?
For technical support, including SMBJ150AHM3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ150AHM3_B/H requirements.
6.How does Aetrix verify that SMBJ150AHM3_B/H is sourced from the original manufacturer or authorized distributors?
All SMBJ150AHM3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ150AHM3_B/H meets industry standards.
7.What is the process for return or replacement of SMBJ150AHM3_B/H?
All SMBJ150AHM3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ150AHM3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ150AHM3_B/H part is unused and in its original packaging.
Return procedure for SMBJ150AHM3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ150AHM3_B/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
