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Vishay General Semiconductor - Diodes Division SMBJ150C-E3/52

Part No.:
SMBJ150C-E3/52
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ150C-E3/52.pdf
Description:
TVS DIODE 150VWM 268VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,824

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Product details

Overview

SMBJ150C-E3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed to protect sensitive electronics against voltage transients induced by inductive load switching and lightning surges. It features a 150 V stand-off voltage (VWM), 167–185 V breakdown voltage (VBR) at 1 mA test current, 600 W peak pulse power (10/1000 µs), clamping voltage of 243 V at 2.5 A peak pulse current, and operates across -55 °C to +150 °C junction temperature range.

For engineers reviewing the SMBJ150C-E3/52 datasheet, SMBJ150C-E3/52 pinout, SMBJ150C-E3/52 application, or SMBJ150C-E3/52 equivalent, this part is selected for robust overvoltage protection on DC power rails, MOSFET gate drivers, and industrial sensor signal lines where fast response (<1 ns), low clamping ratio, and AEC-Q101-compliant reliability are required.

Technical Context

This TVS diode employs a glass-passivated silicon junction optimized for low incremental surge resistance and excellent clamping capability under repetitive 10/1000 µs transients. Its unidirectional polarity enables integration into DC-biased circuits with cathode-anode orientation defined by the band marking.

The device meets MSL Level 1 per J-STD-020, supports lead-free reflow up to 260 °C peak, and delivers 2.5 A peak pulse current (IPPM) while maintaining VC ≤ 243 V - critical for safeguarding 150 V-rated power stages and IGBT gate drivers against ISO 7637-2 pulse 1/2a/5a events.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 150 V - Maximum continuous reverse operating voltage before conduction begins; sets upper limit for protected circuit DC bias.
VBR (min/max) 167 V / 185 V at 1 mA - Confirmed breakdown threshold ensures reliable triggering above normal operating voltage with margin.
VC @ IPPM 243 V at 2.5 A - Clamped voltage during 10/1000 µs surge defines maximum stress imposed on downstream components.
PPPM 600 W - Peak pulse power handling capacity determines survivability against standardized lightning/surge waveforms.
IFSM 100 A - Non-repetitive forward surge rating supports protection during high-energy inductive turn-off events.
TJ max. +150 °C - Maximum junction temperature enables use in under-hood automotive and industrial environments.
RθJA 100 °C/W - Thermal resistance from junction to ambient informs derating requirements on standard PCB copper pads.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity marked by cathode band on one end.

Pin/Terminal Circuit Role Design Meaning
Cathode (banded end) High-side connection in unidirectional configuration Connected to protected line; conducts when transient exceeds VBR, shunting surge current to ground/anode.
Anode Low-side reference terminal Typically tied to system ground or return path; completes conduction path during overvoltage event.

Key Features

Feature Design Value
600 W peak pulse power (10/1000 µs) Enables compliance with IEC 61000-4-5 Level 4 (4 kV) surge testing on 150 V DC bus lines.
Clamping voltage ≤ 243 V at 2.5 A Provides >10% safety margin below 270 V absolute maximum rating of common 150 V-rated power MOSFETs.
Glass passivated chip junction Ensures stable VBR and low leakage (<1 µA at VWM) over lifetime and temperature cycling.
MSL Level 1, 260 °C peak reflow Supports single-pass lead-free assembly without popcorn cracking or parameter shift.
AEC-Q101 qualified option available Validated for automotive powertrain and chassis applications requiring zero-defect reliability and extended temperature operation.

Applications

Industrial Motor Drives Automotive Power Distribution Units

Use Scenario: Protection of IGBT gate driver outputs against Miller-induced voltage spikes during high-dV/dt switching.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between gate and source to clamp transient overshoot before it exceeds gate oxide breakdown.

Use Value: Limits gate-source voltage to ≤243 V, preventing irreversible damage to 20 V-rated gate oxides under 150 V bus conditions.

Use Scenario: Surge suppression on 12 V/24 V battery-fed control modules exposed to load dump and jump-start transients.

IC Role / Device Role / Timing Role: Primary front-end TVS on input rail, absorbing ISO 7637-2 Pulse 5a (75 V/350 ms) energy.

Use Value: Withstands 100 A surge current and maintains clamping below 243 V, protecting downstream DC-DC converters and microcontrollers.

Telecom Power Supplies Industrial Sensor Signal Conditioning

Use Scenario: Input-stage protection for AC/DC adapters and PoE injectors subjected to lightning-induced surges on primary side.

IC Role / Device Role / Timing Role: Unidirectional TVS across bulk capacitor input to clamp differential-mode transients before rectification.

Use Value: 600 W rating handles 10/1000 µs surges up to 4 kV; 150 V VWM avoids leakage during nominal 130–160 VDC operation.

Use Scenario: Protection of analog inputs on PLC I/O modules connected to 4–20 mA current loops in factory automation.

IC Role / Device Role / Timing Role: TVS placed across loop terminals to divert ESD and inductive kickback from solenoid actuation.

Use Value: Sub-1 ns response time prevents latch-up in op-amps; <1 µA leakage at 150 V ensures minimal impact on loop accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ150A-E3/52 Unidirectional, identical VWM/VBR/PPPM, same SMB package and pinout. No functional difference; "A" suffix denotes same unidirectional variant as "C" in Vishay's legacy naming (both refer to unidirectional). Select SMBJ150A-E3/52 if sourcing from distributors listing only "A" suffix; electrically and mechanically interchangeable.
SMCJ150A Same electrical specs but in larger SMC (DO-214AB) package; 1.5× higher thermal mass and RθJA = 40 °C/W. Better power dissipation for high-duty-cycle surges; requires larger PCB footprint and different pad layout. Choose SMCJ150A only when thermal derating or higher IPPM margin (>2.5 A) is needed; not drop-in compatible due to package size.

Compared with SMBJ150C-E3/52, SMBJ150A-E3/52 offers identical performance in the same SMB footprint, while SMCJ150A trades compactness for enhanced thermal handling - making the former ideal for space-constrained designs and the latter suitable for high-reliability industrial power rails.

Availability

SMBJ150C-E3/52 is available at Aetrix Electronics and suitable for industrial motor drives, automotive power distribution units, telecom power supplies, and industrial sensor signal conditioning requiring stable component supply and RoHS-compliant manufacturing.

Supply support for SMBJ150C-E3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.

The SMBJ series is engineered for high-speed transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where robustness against ESD, lightning, and inductive switching surges is mission-critical.

FAQ

What is the polarity configuration of SMBJ150C-E3/52?

SMBJ150C-E3/52 is a unidirectional TVS diode, with the cathode identified by a band on the SMB package body. It conducts only when the cathode is biased positively relative to the anode, making it suitable for DC-biased protection applications such as power supply inputs and gate driver circuits. The "C" suffix in Vishay's nomenclature confirms unidirectional functionality, consistent with the SMBJ150A designation.

Does SMBJ150C-E3/52 meet automotive qualification standards?

SMBJ150C-E3/52 itself is the commercial-grade RoHS-compliant version (E3 suffix). However, Vishay offers AEC-Q101-qualified variants under ordering codes like SMBJ150AHE3_B/H. While SMBJ150C-E3/52 shares identical electrical and thermal specifications, formal automotive qualification requires the HE3 or HM3 suffix. For automotive designs, specify the HE3 variant to ensure full AEC-Q101 compliance documentation and testing.

What is the maximum clamping voltage of SMBJ150C-E3/52 under surge conditions?

The maximum clamping voltage (VC) of SMBJ150C-E3/52 is 243 V, measured at a peak pulse current (IPPM) of 2.5 A using the standardized 10/1000 µs waveform. This value represents the upper voltage limit imposed on the protected circuit during a surge event and is critical for ensuring compatibility with downstream components rated for ≤250 V maximum stress.

Can SMBJ150C-E3/52 be used in bidirectional signal line protection?

No - SMBJ150C-E3/52 is strictly unidirectional and unsuitable for bidirectional AC or data-line protection. For bidirectional applications such as RS-485, CAN, or Ethernet PHY interfaces, Vishay specifies CA-suffix parts (e.g., SMBJ150CA), which feature symmetrical breakdown in both directions. Using SMBJ150C-E3/52 on bidirectional lines risks forward conduction during normal signal swings and failure to suppress negative transients.

What PCB pad layout is recommended for optimal thermal performance of SMBJ150C-E3/52?

Vishay specifies mounting SMBJ150C-E3/52 on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal to achieve the rated 600 W peak pulse power and thermal resistance (RθJA = 100 °C/W). Reducing pad area increases junction temperature rise during surge events and may cause premature thermal runaway. The recommended layout is documented in the SMB (DO-214AA) package drawing on page 5 of document 88392.

SMBJ150C-E3/52 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
150V
Voltage - Breakdown (Min):
167V
Voltage - Clamping (Max) @ Ipp:
268V
Current - Peak Pulse (10/1000µs):
2.2A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ150C-E3/52 FAQ

1.How can I place an order for SMBJ150C-E3/52 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ150C-E3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ150C-E3/52 reliable?

The price and inventory of SMBJ150C-E3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ150C-E3/52 is usually 5 days.

3.What payment methods are accepted for SMBJ150C-E3/52?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ150C-E3/52 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ150C-E3/52?

SMBJ150C-E3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ150C-E3/52 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ150C-E3/52?

For technical support, including SMBJ150C-E3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ150C-E3/52 requirements.

6.How does Aetrix verify that SMBJ150C-E3/52 is sourced from the original manufacturer or authorized distributors?

All SMBJ150C-E3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ150C-E3/52 meets industry standards.

7.What is the process for return or replacement of SMBJ150C-E3/52?

All SMBJ150C-E3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ150C-E3/52, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ150C-E3/52 part is unused and in its original packaging.

Return procedure for SMBJ150C-E3/52:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ150C-E3/52 Tags

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  • Vishay General Semiconductor - Diodes Division SMBJ150C-E3/52
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