Vishay General Semiconductor - Diodes Division SMBJ150D-M3/I
- Part No.:
- SMBJ150D-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ150D-M3/I.pdf
- Description:
- TVS DIODE 150VWM 239VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ150D-M3/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 150 V stand-off voltage (VWM), 170–182 V breakdown voltage (VBR) at 1 mA, 600 W peak pulse power (10/1000 μs), clamping voltage of 239 V at 2.53 A, and maximum reverse leakage of 0.5 μA - deployed to safeguard MOSFETs, ICs, and sensor interfaces in industrial power supplies.
For engineers reviewing the SMBJ150D-M3/I datasheet, SMBJ150D-M3/I pinout, SMBJ150D-M3/I application, or SMBJ150D-M3/I equivalent, key selection criteria include its unidirectional polarity, 150 V operating voltage rating, 239 V clamping performance under surge, thermal resistance (RθJA = 125 °C/W on minimum pad), and M3-grade halogen-free RoHS-compliant construction suitable for automated SMT assembly.
Technical Context
This TVS diode operates as a clamping-type overvoltage protector, leveraging avalanche breakdown to limit transient voltages above its VBR threshold. Its unidirectional configuration provides cathode-anode polarity with band-marked cathode termination, enabling integration into DC-biased circuits where reverse conduction must be blocked during normal operation.
The device delivers 600 W peak pulse power handling per the standardized 10/1000 μs waveform, with derating above 25 °C ambient per defined thermal curves. Junction temperature is rated up to +150 °C, and it meets J-STD-020 MSL Level 1 with 260 °C reflow peak, ensuring reliability in high-volume manufacturing environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 150 V - maximum continuous reverse operating voltage before clamping initiates |
| VBR (min/max) | 170 V / 182 V at 1 mA - tight ±3.5 % tolerance ensures predictable turn-on across production lots |
| VC @ IPPM | 239 V at 2.53 A - clamping voltage defines worst-case voltage seen by protected circuit during surge |
| PPPM | 600 W (10/1000 μs) - peak surge energy absorption capability for lightning or ESD transients |
| ID @ VWM | ≤ 0.5 μA - ultra-low leakage preserves efficiency in high-impedance or battery-powered circuits |
| Package | SMB (DO-214AA) - industry-standard 2-pin SMD outline with 5.59 mm × 3.94 mm footprint and 2.20 mm height |
| Operating TJ | -55 °C to +150 °C - supports deployment in extended-temperature industrial and automotive under-hood applications |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, molded plastic case with matte tin-plated leads compliant with J-STD-002 and JESD 22-B102; polarity indicated by cathode band on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink node | Connected to protected line; conducts avalanche current to ground during overvoltage events |
| Anode | Reference/return path | Typically tied to system ground or low-impedance return; completes clamping path during surge |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables precise coordination with downstream overvoltage thresholds without margin stacking |
| 600 W peak pulse power | Withstands IEC 61000-4-5 Level 4 surges (4 kV line-to-earth) when properly laid out |
| MSL Level 1 rating | Allows single-pass reflow without baking; compatible with standard SMT assembly lines |
| M3 suffix compliance | Halogen-free, RoHS-compliant, and passes JESD 201 Class 2 whisker test for long-term reliability |
| Low RθJM (20 °C/W) | Supports effective heat transfer to PCB copper pads, improving surge repetition capability |
Applications
| Industrial Motor Drives | Telecom Power Supplies |
|---|---|
Use Scenario: Protection of gate drivers and bus voltage sensing circuits against switching transients in variable-frequency drives. IC Role / Device Role / Timing Role: Unidirectional TVS clamping element placed across DC-link or gate-source terminals. Use Value: Limits voltage spikes to ≤239 V during IGBT turn-off, preventing gate oxide rupture and false triggering. | Use Scenario: Input-stage surge suppression on -48 V telecom rectifier outputs exposed to lightning-induced surges. IC Role / Device Role / Timing Role: Primary overvoltage clamp on secondary-side DC distribution rail before POL converters. Use Value: Absorbs 600 W transient energy without degradation, maintaining system uptime per GR-1089-CORE requirements. |
| Automotive Body Control Modules | Industrial Sensor Signal Conditioning |
Use Scenario: Protection of LIN bus transceivers and microcontroller I/O pins against load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional TVS on 12 V supply rail feeding BCM sub-circuits. Use Value: Clamps 12 V rail to <240 V during 100 ms load dump events, preserving MCU reset integrity and EEPROM data. | Use Scenario: Shielding analog front-end inputs (e.g., 4–20 mA loop receivers) from ESD and field-wiring transients. IC Role / Device Role / Timing Role: Low-leakage (≤0.5 μA) TVS placed directly at connector entry point before op-amp input. Use Value: Prevents input stage saturation during 8 kV contact ESD (IEC 61000-4-2), avoiding measurement offset or latch-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ150A-M3/I | Bidirectional variant; symmetrical VBR/VWM in both polarities (170–182 V); no cathode band marking | Required where AC-coupled or bipolar signal lines need protection (e.g., RS-485, CAN bus) | Select SMBJ150A-M3/I only if bidirectional clamping is needed; SMBJ150D-M3/I is optimal for DC rails with defined polarity. |
| SMCJ150A | Larger SMC (DO-214AB) package; higher thermal mass; RθJA = 40 °C/W vs. 125 °C/W; same VWM/VBR/PPPM specs | Better suited for high-repetition surge environments or higher ambient temperatures due to superior thermal dissipation | Choose SMCJ150A when board space allows and thermal management demands exceed SMBJ150D-M3/I's 125 °C/W limit. |
Compared with SMBJ150A-M3/I and SMCJ150A, the SMBJ150D-M3/I offers optimized cost and footprint for unidirectional DC protection, with tighter process control for VBR and lower assembly cost than SMC-packaged alternatives - ideal for space-constrained industrial and telecom designs requiring precise 150 V standoff.
Availability
SMBJ150D-M3/I is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, automotive body control modules, and sensor interface protection requiring stable component supply and full M3-compliant traceability.
Supply support for SMBJ150D-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and manufacturability.
The SMBJ series is engineered for high-energy transient suppression in harsh environments, targeting industrial, telecom, and automotive applications where consistent clamping performance and SMT compatibility are critical.
FAQ
What is the clamping voltage of SMBJ150D-M3/I and how is it measured?
The SMBJ150D-M3/I has a maximum clamping voltage (VC) of 239 V, measured at its peak pulse current (IPPM) of 2.53 A using the standardized 10/1000 μs double-exponential surge waveform. This value represents the highest voltage the device allows across its terminals during a transient event, directly protecting downstream components like MOSFETs or microcontrollers from overvoltage damage. The SMBJ150D-M3/I achieves this clamping performance while maintaining low incremental surge resistance.
Is SMBJ150D-M3/I suitable for automotive applications per AEC-Q200?
The SMBJ150D-M3/I is not AEC-Q200 qualified; it is an industrial-grade TVS diode rated for -55 °C to +150 °C junction temperature and compliant with J-STD-020 MSL Level 1. While widely used in automotive body electronics (e.g., BCMs) for load dump and ISO 7637-2 pulse protection, formal qualification requires additional stress testing. For AEC-Q200-compliant designs, engineers should verify with Vishay's qualified automotive variants or consult Aetrix for validated alternatives. SMBJ150D-M3/I remains appropriate for non-safety-critical automotive subsystems.
How does the M3 suffix affect SMBJ150D-M3/I's compliance and reliability?
The M3 suffix on SMBJ150D-M3/I indicates halogen-free, RoHS-compliant construction, adherence to Vishay's industrial-grade material specifications, and successful completion of JESD 201 Class 2 whisker testing - confirming resistance to tin whisker growth under thermal cycling and humidity stress. This makes SMBJ150D-M3/I suitable for long-life industrial deployments and high-reliability SMT assemblies where intermetallic dendrite formation could cause latent shorts. The M3 designation does not alter electrical parameters but enhances long-term field reliability.
Can SMBJ150D-M3/I replace SMBJ150A-M3/I in a design?
No - SMBJ150D-M3/I is unidirectional and cannot directly replace the bidirectional SMBJ150A-M3/I without circuit redesign. The D-suffix device conducts only in reverse bias (cathode to anode), while the A-suffix version clamps symmetrically in both directions. Substituting SMBJ150D-M3/I in an AC or bidirectional signal path (e.g., RS-485, CAN) would leave one polarity unprotected. Always verify polarity requirements and consult the SMBJ150D-M3/I datasheet's "Devices for Bidirectional Applications" section before interchange.
What PCB layout guidance applies to SMBJ150D-M3/I for optimal surge performance?
For optimal surge performance, SMBJ150D-M3/I requires minimum recommended copper pad layout per Vishay: 5.0 mm × 5.0 mm per terminal to maximize heat dissipation and reduce thermal impedance. Keep traces short and wide between the TVS and protected node, place it as close as possible to the entry point (e.g., connector), and route the ground path directly to a solid ground plane - not daisy-chained. These practices ensure the SMBJ150D-M3/I clamps transients before they propagate, maintaining its specified 239 V VC and preventing voltage overshoot due to parasitic inductance.
SMBJ150D-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 150V
- Voltage - Breakdown (Min):
- 170V
- Voltage - Clamping (Max) @ Ipp:
- 239V
- Current - Peak Pulse (10/1000µs):
- 2.53A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ150D-M3/I FAQ
1.How can I place an order for SMBJ150D-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ150D-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ150D-M3/I reliable?
The price and inventory of SMBJ150D-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ150D-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ150D-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ150D-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ150D-M3/I?
SMBJ150D-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ150D-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ150D-M3/I?
For technical support, including SMBJ150D-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ150D-M3/I requirements.
6.How does Aetrix verify that SMBJ150D-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ150D-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ150D-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ150D-M3/I?
All SMBJ150D-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ150D-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ150D-M3/I part is unused and in its original packaging.
Return procedure for SMBJ150D-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ150D-M3/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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