Vishay General Semiconductor - Diodes Division SMBJ150-E3/5B
- Part No.:
- SMBJ150-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ150-E3/5B.pdf
- Description:
- TVS DIODE 150VWM 268VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ150-E3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 150 V standoff voltage (VWM), 167–185 V breakdown range (VBR at 1 mA), 243 V maximum clamping voltage (VC) at 2.5 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in industrial motor drives to safeguard MOSFET gate drivers against inductive switching transients.
For engineers reviewing the SMBJ150-E3/5B datasheet, SMBJ150-E3/5B pinout, SMBJ150-E3/5B application, or SMBJ150-E3/5B equivalent, key selection criteria include verified clamping performance under repetitive surge conditions, thermal resistance (RθJA = 100 °C/W), RoHS-compliant matte tin terminations, and compatibility with automated SMT placement on standard PCB pad layouts per JEDEC DO-214AA footprint.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, leveraging glass-passivated silicon junction technology to deliver sub-nanosecond response time and low incremental surge resistance. Its cathode-band polarity marking enables unambiguous orientation during assembly, and it meets MSL Level 1 per J-STD-020 with 260 °C reflow peak tolerance.
The device is rated for continuous operation from –55 °C to +150 °C junction temperature, dissipates 5.0 W at 50 °C ambient on infinite heatsink, and supports 100 A non-repetitive forward surge current (8.3 ms half-sine). Its 1.0 µA max reverse leakage at VWM ensures minimal standby power loss in high-impedance protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 150 V - Maximum continuous reverse voltage before significant leakage; sets operating margin below clamping threshold. |
| VBR (Breakdown Voltage) | 167–185 V at 1 mA - Confirmed avalanche onset range; defines minimum transient voltage triggering point. |
| VC (Clamping Voltage) | 243 V at IPPM = 2.5 A - Measured peak voltage across device during 10/1000 µs surge; determines protected circuit's worst-case overvoltage exposure. |
| PPPM (Peak Pulse Power) | 600 W - Sustained energy absorption capability under standardized 10/1000 µs waveform; validates single-event surge robustness. |
| RθJA (Junction-to-Ambient) | 100 °C/W - Thermal resistance with standard 0.2" × 0.2" copper pads; informs derating requirements above 25 °C ambient. |
| IFSM (Surge Current) | 100 A - Peak forward surge rating (8.3 ms half-sine); supports protection of rectifier-fed DC rails during fault events. |
| TJ max. | +150 °C - Maximum allowable junction temperature; enables use in enclosed industrial enclosures without active cooling. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode identified by molded band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during forward conduction or clamping | Connected to protected line (e.g., VDD rail); must be routed with low-inductance trace to minimize overshoot. |
| Cathode | Current exit terminal; marked with band | Typically tied to ground or lower-potential reference; polarity critical-reverse connection disables protection. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Validated energy-handling capacity for IEC 61000-4-5 Level 4 surges without degradation. |
| Glass passivated chip junction | Ensures stable VBR and low leakage over temperature and lifetime; eliminates moisture-induced parameter drift. |
| MSL Level 1 (260 °C peak) | Enables single-reflow SMT assembly without pre-baking; reduces manufacturing complexity and cost. |
| RoHS-compliant, commercial grade (E3 suffix) | Meets EU RoHS Directive 2011/65/EU; suitable for global commercial and industrial deployments. |
| Low incremental surge resistance | Minimizes VC rise during fast-rising transients (<1 ns), improving protection margin for sensitive ICs. |
Applications
| Industrial Motor Drive Protection | Telecom DC Power Input |
|---|---|
|
Use Scenario: Suppresses inductive kickback from relay coils and H-bridge MOSFET switching in PLC output modules. IC Role / Device Role / Timing Role: Unidirectional TVS placed between 24 V DC supply rail and chassis ground to clamp transients up to ±1 kV. Use Value: Limits rail voltage excursion to ≤243 V during 2.5 A surge, preventing gate oxide rupture in downstream logic-level MOSFETs. |
Use Scenario: Protects primary-side DC-DC converter inputs in base station remote radio units exposed to lightning-induced surges. IC Role / Device Role / Timing Role: Standoff-rated TVS on 48 V input bus, coordinated with upstream MOV and fuse for staged overvoltage defense. Use Value: Clamps 10/1000 µs surges within 1 ns, maintaining <1 µA leakage at 48 V to avoid standby current penalties in always-on systems. |
| Automotive Body Control Module | Industrial Sensor Signal Conditioning |
|
Use Scenario: Shields LIN bus transceivers and microcontroller I/O pins from load-dump and jump-start transients in 12 V vehicle subsystems. IC Role / Device Role / Timing Role: Unidirectional clamp on VBAT-fed regulator input, sized to handle ISO 7637-2 Pulse 5a (12 V system). Use Value: Withstands 100 A surge (8.3 ms) without failure, enabling compliance with AEC-Q101-qualified variants (HE3 suffix) when required. |
Use Scenario: Guards analog front-end inputs of 4–20 mA current-loop sensors in factory automation against ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance TVS on differential sensor lines, selected for minimal signal distortion at 1 kHz bandwidth. Use Value: Delivers 243 V clamping at 2.5 A while adding <1 pF junction capacitance - preserving loop accuracy and noise immunity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ150A-M3/5B | Halogen-free, RoHS-compliant variant; identical electrical specs and package. | No functional difference; selected where halogen-free materials are mandated by OEM sustainability policies. | Choose M3/5B when environmental compliance requires bromine/chlorine-free molding compound. |
| SMCJ150A-E3/57T | Larger SMC (DO-214AB) package; same VWM/VC, but higher PPPM = 1500 W and RθJA = 50 °C/W. | Used where higher surge duty cycle or improved thermal dissipation is needed; requires larger PCB footprint. | Select SMCJ150A-E3/57T only if design faces >0.01% duty-cycle surges or elevated ambient temperatures (>70 °C). |
Compared with SMBJ150-E3/5B, the M3/5B alternative offers identical protection performance with halogen-free construction, while the SMCJ150A-E3/57T provides 2.5× higher pulse power handling at the cost of increased board area and thermal mass - making SMBJ150-E3/5B optimal for space-constrained, commercial-grade 600 W surge protection.
Availability
SMBJ150-E3/5B is available at Aetrix Electronics and suitable for industrial motor drives, telecom power inputs, automotive body control modules, and industrial sensor signal conditioning requiring stable component supply and full traceability.
Supply support for SMBJ150-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, precision, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in compact SMT form factors, targeting cost-sensitive yet robust protection needs across industrial, telecom, and automotive electronics.
FAQ
What is the maximum clamping voltage of SMBJ150-E3/5B at its rated peak pulse current?
The SMBJ150-E3/5B has a maximum clamping voltage (VC) of 243 V when subjected to its specified peak pulse current of 2.5 A using the 10/1000 µs waveform. This value is measured per Figure 1 in Vishay document 88392 and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring downstream components remain within their absolute maximum ratings.
Is SMBJ150-E3/5B suitable for bidirectional transient protection?
No, SMBJ150-E3/5B is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. For bidirectional protection, Vishay specifies the "CA" suffix (e.g., SMBJ150CA). Using SMBJ150-E3/5B in reverse-biased AC applications would result in forward conduction and potential failure; always verify polarity alignment in schematic and layout for SMBJ150-E3/5B.
What does the "E3/5B" suffix indicate in SMBJ150-E3/5B?
The "E3" denotes RoHS-compliant, commercial-grade construction with matte tin-plated leads, while "5B" specifies packaging in 13-inch diameter plastic tape and reel with 3200 units per reel. This ordering code confirms compliance with EU RoHS Directive 2011/65/EU and ensures compatibility with high-speed pick-and-place equipment using standard EIA-481-2 carrier tape dimensions.
How does SMBJ150-E3/5B perform under elevated ambient temperatures?
SMBJ150-E3/5B follows standard derating curves: its peak pulse power drops linearly above 25 °C ambient, with 50% capability retained at ~100 °C case temperature (per Fig. 2 in document 88392). Its RθJA of 100 °C/W means a 2.5 A surge raises junction temperature by ~250 °C above ambient - so proper copper pad area (0.2" × 0.2") and airflow are essential to maintain TJ ≤ 150 °C.
Can SMBJ150-E3/5B replace older P6KE150A in existing designs?
SMBJ150-E3/5B is not a direct drop-in replacement for through-hole P6KE150A due to differing packages (SMB vs. DO-15), thermal paths, and surge waveform ratings (10/1000 µs vs. 1.5 kW 10/1000 µs). While both share 150 V VWM, the SMBJ150-E3/5B offers lower profile, better SMT manufacturability, and tighter VBR tolerance, but requires PCB redesign and layout validation for parasitic inductance and thermal relief.
SMBJ150-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 150V
- Voltage - Breakdown (Min):
- 167V
- Voltage - Clamping (Max) @ Ipp:
- 268V
- Current - Peak Pulse (10/1000µs):
- 2.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ150-E3/5B FAQ
1.How can I place an order for SMBJ150-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ150-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ150-E3/5B reliable?
The price and inventory of SMBJ150-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ150-E3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ150-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ150-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ150-E3/5B?
SMBJ150-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ150-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ150-E3/5B?
For technical support, including SMBJ150-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ150-E3/5B requirements.
6.How does Aetrix verify that SMBJ150-E3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ150-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ150-E3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ150-E3/5B?
All SMBJ150-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ150-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ150-E3/5B part is unused and in its original packaging.
Return procedure for SMBJ150-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ150-E3/5B Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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