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Vishay General Semiconductor - Diodes Division SMBJ150HE3/5B
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- Part No.:
- SMBJ150HE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ150HE3/5B.pdf
- Description:
- TVS DIODE 150VWM 268VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:2,158
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Product details
Overview
SMBJ150HE3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode designed for robust overvoltage protection of sensitive electronics. It features a 150 V standoff voltage (VWM), 167–185 V breakdown range (VBR at 1 mA), 243 V clamping voltage (VC) at 2.5 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed on power rails and signal lines in industrial motor drives and telecom power supplies.
For engineers reviewing the SMBJ150HE3/5B datasheet, SMBJ150HE3/5B pinout, SMBJ150HE3/5B application, or SMBJ150HE3/5B equivalent, this device delivers AEC-Q101-qualified surge immunity, low incremental surge resistance, and fast sub-nanosecond response time - critical for protecting MOSFET gate drivers, DC-DC converter inputs, and RS-485 transceivers against lightning-induced transients and inductive switching spikes.
Technical Context
This TVS diode operates as a unidirectional clamping device with cathode-banded polarity, leveraging a glass-passivated silicon junction to achieve stable avalanche breakdown behavior under repetitive transient stress. Its thermal resistance (RθJA = 100 °C/W) and junction temperature limit (TJ = 150 °C) support operation in high-ambient environments when mounted on 5.0 mm × 5.0 mm copper pads per JEDEC standards.
The SMBJ150HE3/5B is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine) and exhibits ≤1.0 µA reverse leakage at VWM, enabling low-power standby compatibility. Its MSL Level 1 moisture sensitivity and matte tin-plated leads ensure compatibility with lead-free reflow processes up to 260 °C peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 150 V - maximum continuous reverse voltage before significant leakage; defines operating margin below clamping threshold |
| VBR (Breakdown Voltage) | 167–185 V at 1 mA - guaranteed avalanche initiation range; ensures predictable turn-on during overvoltage events |
| VC (Clamping Voltage) | 243 V at IPPM = 2.5 A (10/1000 µs) - peak voltage seen by protected circuit during worst-case surge |
| PPPM (Peak Pulse Power) | 600 W - energy-handling capacity for standardized 10/1000 µs transients; supports IEC 61000-4-5 Level 4 compliance |
| IFSM (Surge Current) | 100 A (8.3 ms half-sine) - withstand capability for single-event inductive kickback without degradation |
| TJmax | 150 °C - maximum junction temperature; enables use in enclosed industrial enclosures with limited airflow |
| Package | SMB (DO-214AA) - 3.94 mm × 2.13 mm footprint; compatible with automated SMT placement and standard reflow profiles |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, unidirectional configuration with cathode band marking on terminal 1. Dimensions: 4.57 mm × 2.20 mm × 2.44 mm (L × W × H); matte tin-plated leads meet J-STD-002 solderability requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Terminal 2) | Current entry point during forward conduction | Connected to ground or lower-potential rail; enables clamping action when cathode side exceeds VWM |
| Cathode (Terminal 1, banded end) | Current exit point during reverse avalanche | Connected to protected line (e.g., +12 V rail); conducts surge current to ground when transient exceeds VBR |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity bias, and surge endurance - suitable for under-hood ECUs and ADAS power modules |
| 600 W peak pulse power (10/1000 µs) | Enables protection against IEC 61000-4-5 combination wave surges up to 4 kV (open-circuit)/2 kA (short-circuit) without derating |
| Glass-passivated junction | Ensures stable VBR tolerance (±5 % typical), low leakage (<1 µA), and long-term parameter stability across 1000+ surge events |
| MSL Level 1, 260 °C peak reflow | Eliminates pre-baking requirement and supports single-pass lead-free assembly in high-volume manufacturing |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes voltage overshoot during clamping - critical for safeguarding 150 V-rated MOSFETs and GaN FETs |
Applications
| Industrial Motor Drives | Telecom Power Supplies |
|---|---|
|
Use Scenario: Protection of IGBT gate driver ICs and bootstrap circuits against Miller-induced voltage spikes during high-dV/dt switching. IC Role / Device Role / Timing Role: Unidirectional TVS placed between gate and source to clamp negative-going transients and prevent false turn-on. Use Value: Limits gate-source voltage to ≤243 V during 2.5 A surge, preserving gate oxide integrity and ensuring reliable PWM timing control. |
Use Scenario: Input-stage surge suppression on -48 V DC distribution boards in central office equipment exposed to lightning-induced surges. IC Role / Device Role / Timing Role: Primary clamping element on bulk input rail upstream of DC-DC converters and hot-swap controllers. Use Value: Clamps 600 W transients within 1 ns, maintaining downstream regulator enable timing and preventing brownout resets. |
| Automotive Body Control Modules | Industrial PLC Analog Inputs |
|
Use Scenario: Protection of LIN bus transceivers and microcontroller I/O pins against load dump and jump-start transients in 12 V systems. IC Role / Device Role / Timing Role: Standoff-rated TVS on LIN data line and VCC supply, referenced to chassis ground. Use Value: Withstands 100 A surge (8.3 ms) while holding VC ≤243 V - meets ISO 7637-2 Pulse 5a requirements without additional series impedance. |
Use Scenario: Overvoltage hardening of 4–20 mA current loop receiver inputs in factory automation sensors exposed to ESD and cable coupling. IC Role / Device Role / Timing Role: Bidirectional-capable unidirectional TVS (cathode grounded) shunting transients to common-mode ground plane. Use Value: Delivers <1 µA leakage at 150 V, preserving loop accuracy; clamps 1 kV EFT bursts to <243 V within nanoseconds. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ150A-E3/5B | Commercial-grade (non-AEC-Q101); identical electrical specs and SMB package | Lacks automotive qualification; not approved for safety-critical vehicle subsystems | Select when cost-sensitive industrial designs do not require automotive reliability validation |
| SMAJ150AHE3/A | Lower power rating (400 W vs. 600 W); SMA package (smaller footprint, higher RθJA) | Reduced surge margin; unsuitable for IEC 61000-4-5 Level 4 or repeated high-energy events | Choose only for space-constrained consumer applications with lower transient threat profiles |
Compared with SMBJ150A-E3/5B, the SMBJ150HE3/5B adds AEC-Q101 qualification without sacrificing clamping performance or package compatibility; versus SMAJ150AHE3/A, it provides 50 % higher pulse power and superior thermal dissipation in the same board area - making it the preferred choice for mission-critical industrial and automotive power interfaces.
Availability
SMBJ150HE3/5B is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, automotive body control modules, and PLC analog input protection requiring stable component supply and long-term lifecycle assurance.
Supply support for SMBJ150HE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where sustained surge immunity and AEC-Q101 compliance are mandatory.
FAQ
What is the clamping voltage of SMBJ150HE3/5B at its rated peak pulse current?
The SMBJ150HE3/5B has a maximum clamping voltage (VC) of 243 V when subjected to its specified peak pulse current of 2.5 A using the 10/1000 µs waveform. This value is measured per Figure 1 in Vishay document 88392 and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring compatibility with 200 V-rated downstream components.
Is SMBJ150HE3/5B suitable for automotive applications?
Yes, SMBJ150HE3/5B is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and footnote (1) in the thermal characteristics table. This qualification covers temperature cycling, high-temperature operating life, and surge testing - making SMBJ150HE3/5B appropriate for engine control units, body electronics, and ADAS power domains where automotive-grade reliability is required.
What does the "5B" in SMBJ150HE3/5B indicate?
The "5B" suffix denotes the packaging configuration: 13-inch diameter plastic tape and reel with a base quantity of 3200 units. This differs from "52", which indicates 7-inch reels with 750 units. Both share identical electrical and mechanical specifications; the "5B" format supports high-volume SMT assembly lines requiring extended reel run times and reduced changeover frequency for SMBJ150HE3/5B.
How does SMBJ150HE3/5B differ from bidirectional variants like SMBJ150CA?
SMBJ150HE3/5B is unidirectional with cathode-band polarity and optimized for DC rail protection, whereas SMBJ150CA is bidirectional and symmetrical - used in AC-coupled or differential signal paths. The unidirectional SMBJ150HE3/5B offers lower leakage (<1 µA at 150 V) and higher surge current capability in one polarity, while SMBJ150CA exhibits matched clamping in both directions but higher leakage at VWM.
What is the thermal resistance of SMBJ150HE3/5B, and how does it affect layout design?
The SMBJ150HE3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain TJ ≤150 °C under full 5.0 W steady-state dissipation, PCB layout must provide adequate copper area and avoid thermal bottlenecks - underscoring the need for symmetric pad geometry and optional thermal vias beneath the SMB footprint for SMBJ150HE3/5B deployments.
SMBJ150HE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 150V
- Voltage - Breakdown (Min):
- 167V
- Voltage - Clamping (Max) @ Ipp:
- 268V
- Current - Peak Pulse (10/1000µs):
- 2.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ150HE3/5B FAQ
1.How can I place an order for SMBJ150HE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ150HE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ150HE3/5B reliable?
The price and inventory of SMBJ150HE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ150HE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ150HE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ150HE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ150HE3/5B?
SMBJ150HE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ150HE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ150HE3/5B?
For technical support, including SMBJ150HE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ150HE3/5B requirements.
6.How does Aetrix verify that SMBJ150HE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ150HE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ150HE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ150HE3/5B?
All SMBJ150HE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ150HE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ150HE3/5B part is unused and in its original packaging.
Return procedure for SMBJ150HE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ150HE3/5B Tags
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