Vishay General Semiconductor - Diodes Division SMBJ15AHE3_A/H
- Part No.:
- SMBJ15AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ15AHE3_A/H.pdf
- Description:
- TVS DIODE 15VWM 24.4VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:7,733
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ15AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode designed for robust overvoltage protection of sensitive electronics. It features a 15 V stand-off voltage (VWM), 24.4 V maximum clamping voltage (VC) at 24.6 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed on power rails and signal lines in industrial motor drives, automotive body control modules, and sensor interface circuits.
For engineers reviewing the SMBJ15AHE3_A/H datasheet, SMBJ15AHE3_A/H pinout, SMBJ15AHE3_A/H application, or SMBJ15AHE3_A/H equivalent, key selection criteria include its AEC-Q101 qualification, low 0.088 %/°C temperature coefficient of breakdown voltage, 1.0 µA max reverse leakage at VWM, and compatibility with automated SMT placement on SMB (DO-214AA) footprint.
Technical Context
This TVS diode operates as a unidirectional clamping device with cathode-band polarity marking, leveraging a glass-passivated silicon junction to achieve fast response (<1 ps) and low incremental surge resistance. Its breakdown voltage range is 16.7–18.5 V at 1.0 mA test current, ensuring reliable turn-on before downstream IC damage thresholds.
The device is rated for 150 °C maximum junction temperature and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. Thermal resistance is 100 °C/W (junction-to-ambient) and 20 °C/W (junction-to-lead), supporting operation under sustained transient stress when mounted on 5.0 mm × 5.0 mm copper pads per specification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 15 V - Maximum continuous reverse operating voltage before clamping begins; defines safe working margin for 12 V nominal systems. |
| VBR min/max | 16.7 V / 18.5 V at 1.0 mA - Confirmed breakdown threshold ensures predictable activation above system rail voltage. |
| VC @ IPPM | 24.4 V at 24.6 A - Clamping voltage limits protected circuit stress during 600 W transient events. |
| IPPM | 24.6 A - Peak pulse current capability with 10/1000 µs waveform; derates linearly above 25 °C ambient. |
| Leakage ID | 1.0 µA max at 15 V - Minimal standby power loss and signal integrity impact in high-impedance interfaces. |
| TJ max | +150 °C - Enables use in under-hood automotive and industrial environments without thermal derating penalties. |
| Package | SMB (DO-214AA) - Standardized 2-pin SMT outline with 5.59 mm × 4.06 mm footprint and 2.20 mm height; compatible with IPC-7351B. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, unidirectional configuration with cathode band marking on one end. Matte tin-plated leads meet J-STD-002 solderability and JESD22-B102 whisker resistance Class 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lowest potential node; completes clamping path during positive transients on cathode side. |
| Cathode | Protected line input terminal | Connected to the line being protected (e.g., 12 V rail or sensor output); conducts during overvoltage to shunt energy to ground. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including BCM, infotainment power supplies, and ADAS sensor interfaces. |
| 600 W peak pulse power | Withstands ISO 7637-2 Pulse 1/2a/3a and IEC 61000-4-5 Level 3 surges without degradation. |
| Glass passivated junction | Ensures stable VBR over lifetime and immunity to humidity-induced parameter drift in harsh environments. |
| MSL Level 1 rating | Allows unlimited floor life and single-reflow processing at 260 °C peak without preconditioning. |
| Low clamping ratio (VC/VBR) | 1.46 typical - Minimizes voltage overshoot during clamping, critical for protecting 16 V tolerant ICs. |
Applications
| Automotive Body Control Module (BCM) | Industrial PLC Digital Input Card |
|---|---|
|
Use Scenario: Protects microcontroller GPIO and CAN transceiver power pins from load dump and inductive switching spikes in 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: Unidirectional TVS placed between 12 V supply rail and chassis ground to clamp transients up to ±100 V. Use Value: Limits clamped voltage to 24.4 V, well below 30 V absolute maximum ratings of common automotive MCUs and transceivers. |
Use Scenario: Shields 24 V DC digital input optocoupler front-end from field-wiring induced surges in factory automation cabinets. IC Role / Device Role / Timing Role: Standoff-rated TVS on input line to absorb repetitive 1 kV/500 A transients per IEC 61000-4-5. Use Value: Delivers 600 W pulse handling with <1 ns response, preventing false triggering and latch-up in isolated input stages. |
| Consumer Appliance Motor Drive Board | Medical Sensor Signal Conditioning Circuit |
|
Use Scenario: Guards gate driver IC supply pins against back-EMF from brushed DC motors in washing machines and HVAC blowers. IC Role / Device Role / Timing Role: Local clamping device adjacent to half-bridge driver ICs, referenced to low-side switch ground. Use Value: 24.4 V clamping prevents overvoltage damage to 20 V-rated gate drivers while maintaining fast recovery after surge. |
Use Scenario: Safeguards analog front-end op-amps and ADC inputs in portable patient monitors exposed to ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-leakage (1.0 µA) unidirectional TVS on differential sensor lines to preserve signal fidelity. Use Value: Sub-µA leakage avoids DC offset errors; 15 V VWM accommodates ±10 V sensor full-scale ranges with safety margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ15A-E3/52 | Commercial-grade RoHS-compliant version; no AEC-Q101 qualification; same VWM, VC, and package. | Lacks automotive qualification; suitable for consumer and industrial non-automotive designs only. | Select when AEC-Q101 is not required and cost sensitivity outweighs automotive compliance needs. |
| SMCJ15AHE3_A/H | Same electrical specs but in larger SMC (DO-214AB) package; 1500 W peak pulse power rating vs. 600 W. | Higher power handling enables use in higher-energy surge environments (e.g., AC mains input stages). | Choose when system-level surge testing exceeds 600 W requirements or board layout allows larger footprint. |
Compared with SMBJ15AHE3_A/H, SMBJ15A-E3/52 offers identical clamping performance at lower qualification cost, while SMCJ15AHE3_A/H trades PCB area for 2.5× higher surge energy absorption - both require review of layout constraints and compliance scope before substitution.
Availability
SMBJ15AHE3_A/H is available at Aetrix Electronics and suitable for automotive electronics, industrial PLCs, and medical sensor systems requiring stable component supply with long-term lifecycle support and AEC-Q101 traceability.
Supply support for SMBJ15AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific validation.
The SMBJ series is engineered for high-reliability transient suppression in automotive, industrial, and computing applications - delivering consistent clamping performance across temperature and lifetime under real-world surge stress.
FAQ
What is the clamping voltage of SMBJ15AHE3_A/H at its rated peak pulse current?
The SMBJ15AHE3_A/H has a maximum clamping voltage (VC) of 24.4 V at 24.6 A peak pulse current (IPPM) with a 10/1000 µs waveform. This value is measured per standard test conditions in the Vishay datasheet (Document Number: 88392) and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ15AHE3_A/H maintains this clamping performance across its specified operating temperature range.
Is SMBJ15AHE3_A/H suitable for automotive applications?
Yes, SMBJ15AHE3_A/H is AEC-Q101 qualified, making it suitable for automotive applications including body control modules, infotainment power supplies, and sensor interfaces. The "HE3" suffix explicitly denotes RoHS-compliant and AEC-Q101 qualified construction. Its 150 °C maximum junction temperature and MSL Level 1 rating further support use in under-hood and dashboard environments where thermal and reliability demands are stringent.
What is the package type and mounting compatibility of SMBJ15AHE3_A/H?
SMBJ15AHE3_A/H uses the SMB (DO-214AA) surface-mount package - measuring 4.57 mm × 3.94 mm with 2.20 mm height - and features matte tin-plated leads compliant with J-STD-002 solderability and JESD22-B102 whisker resistance Class 2. It is fully compatible with standard reflow profiles (peak 260 °C) and automated pick-and-place equipment, supporting high-volume manufacturing without special handling.
How does SMBJ15AHE3_A/H compare to bidirectional TVS diodes like SMBJ15CA?
SMBJ15AHE3_A/H is unidirectional and intended for DC line protection with defined polarity (cathode marked), whereas SMBJ15CA is bidirectional and used for AC or floating signal line protection. The SMBJ15AHE3_A/H has lower leakage (1.0 µA vs. 2.0 µA for SMBJ15CA at VWM) and is optimized for asymmetric voltage rails. Its clamping behavior applies only in reverse bias; forward conduction follows standard diode characteristics (VF ≤ 3.5 V at 50 A).
What is the thermal resistance and power derating behavior of SMBJ15AHE3_A/H?
SMBJ15AHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W and junction-to-lead (RθJL) of 20 °C/W when mounted on 5.0 mm × 5.0 mm copper pads. Power dissipation derates linearly above 25 °C ambient, with peak pulse power reduced per Figure 2 in the Vishay datasheet (88392). At 85 °C ambient, the 600 W rating drops to approximately 420 W for repetitive pulses.
SMBJ15AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 15V
- Voltage - Breakdown (Min):
- 16.7V
- Voltage - Clamping (Max) @ Ipp:
- 24.4V
- Current - Peak Pulse (10/1000µs):
- 24.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ15AHE3_A/H FAQ
1.How can I place an order for SMBJ15AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ15AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ15AHE3_A/H reliable?
The price and inventory of SMBJ15AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ15AHE3_A/H is usually 5 days.
3.What payment methods are accepted for SMBJ15AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ15AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ15AHE3_A/H?
SMBJ15AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ15AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ15AHE3_A/H?
For technical support, including SMBJ15AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ15AHE3_A/H requirements.
6.How does Aetrix verify that SMBJ15AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All SMBJ15AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ15AHE3_A/H meets industry standards.
7.What is the process for return or replacement of SMBJ15AHE3_A/H?
All SMBJ15AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ15AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ15AHE3_A/H part is unused and in its original packaging.
Return procedure for SMBJ15AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ15AHE3_A/H Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)