Vishay General Semiconductor - Diodes Division SMBJ15HE3/5B
- Part No.:
- SMBJ15HE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ15HE3/5B.pdf
- Description:
- TVS DIODE 15VWM 26.9VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:2,043
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ15HE3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features a 15 V standoff voltage (VWM), 16.7–18.5 V breakdown range at 1 mA, 24.4 V maximum clamping voltage at 24.6 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed for protecting MOSFET gates and sensor I/O in industrial motor drives.
For engineers reviewing the SMBJ15HE3/5B datasheet, SMBJ15HE3/5B pinout, SMBJ15HE3/5B application, or SMBJ15HE3/5B equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), low leakage (<1.0 µA at VWM), and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a voltage-clamping protection device, leveraging an avalanche breakdown mechanism to divert transient energy away from sensitive downstream circuitry. Its glass-passivated junction ensures stable breakdown characteristics and long-term reliability under repetitive surge stress.
The SMBJ15HE3/5B is rated for -55 °C to +150 °C operating junction temperature, supports 100 A non-repetitive forward surge current (8.3 ms half-sine), and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak temperature - confirming suitability for high-volume lead-free assembly processes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 15 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC bias margin for protected line. |
| VBR min/max | 16.7 V / 18.5 V at IT = 1 mA - Confirmed breakdown threshold range; ensures predictable turn-on during overvoltage events. |
| VC @ IPPM | 24.4 V at 24.6 A - Clamped voltage under 600 W 10/1000 µs surge; determines maximum stress imposed on protected IC or MOSFET. |
| IPPM | 24.6 A - Peak pulse current capability with standardized waveform; validates robustness against IEC 61000-4-5 Level 4 surges. |
| PPPM | 600 W - Peak pulse power rating; enables protection of 12–24 V systems against lightning-induced transients and inductive switching spikes. |
| ID @ VWM | <1.0 µA - Reverse leakage at standoff voltage; minimizes quiescent power loss and avoids false triggering in low-power sensor interfaces. |
| TJ max | +150 °C - Maximum junction temperature; supports operation in enclosed industrial enclosures without forced cooling. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; polarity indicated by cathode band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during forward conduction | Connected to ground or lower-potential rail in unidirectional clamp configuration; forms return path for surge current. |
| Cathode | Current exit terminal during forward conduction; marked with band | Connected to protected line (e.g., 15 V supply rail or sensor output); avalanche conduction occurs when cathode-to-anode voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance - suitable for under-hood and ADAS power rail protection. |
| 600 W peak pulse power (10/1000 µs) | Enables single-device protection against IEC 61000-4-5 Combination Wave (4 kV/2 Ω) surges on 24 V industrial buses without derating. |
| Low incremental surge resistance | Minimizes VC overshoot during fast transients, improving clamping precision and reducing stress on downstream SiC MOSFET gate drivers. |
| MSL Level 1, 260 °C peak reflow | Supports standard lead-free SMT reflow profiles without preconditioning; eliminates moisture sensitivity handling requirements. |
| Glass passivated junction | Ensures stable VBR tolerance and low leakage over 10+ years in humid environments (e.g., factory automation PLC I/O modules). |
Applications
| Industrial Motor Drive Control | Automotive Body Control Module (BCM) |
|---|---|
|
Use Scenario: Protection of gate driver ICs and bootstrap FETs against inductive kickback from BLDC motor phase switching. IC Role / Device Role / Timing Role: Unidirectional TVS placed between high-side gate and source, clamping negative-going transients below -0.7 V and positive surges up to 24.4 V. Use Value: Prevents gate oxide damage in 600 V half-bridge drivers while maintaining <1 µA leakage to avoid false turn-on during PWM dead-time. |
Use Scenario: Surge suppression on LIN bus lines and 12 V power inputs in BCM units exposed to load dump and jump-start conditions. IC Role / Device Role / Timing Role: Standoff-rated clamping device on 12 V rail and LIN TX/RX nodes, activated within <1 ns of overvoltage onset. Use Value: Maintains system uptime during ISO 7637-2 Pulse 5a (load dump) events up to 35 V/400 ms without latch-up or parametric shift. |
| Factory Automation Sensor Interface | Telecom Power Supply Input |
|
Use Scenario: ESD and surge protection for analog outputs (4–20 mA) and digital I/O (RS-485) in IP67-rated pressure/temperature transmitters. IC Role / Device Role / Timing Role: First-line transient shunt on sensor output traces, placed adjacent to connector to minimize inductance. Use Value: Passes IEC 61000-4-2 Level 4 (±15 kV air, ±8 kV contact) and IEC 61000-4-5 Level 3 (2 kV line-earth) without degradation. |
Use Scenario: Primary overvoltage clamp on AC/DC converter secondary-side 48 V output feeding PoE PSE controllers and baseband processors. IC Role / Device Role / Timing Role: Fast-response voltage limiter between DC output and downstream DC-DC regulators, absorbing energy from transformer ringing and rectifier reverse recovery. Use Value: Limits output overshoot to ≤24.4 V during 600 W surges, preventing brownout reset of 3.3 V logic rails powered via buck converters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ15A-E3/5B | Commercial-grade (non-AEC-Q101), identical electrical specs and SMB package. | Lacks automotive qualification; not approved for use in safety-critical vehicle subsystems. | Select when cost-sensitive industrial designs do not require automotive reliability validation. |
| SMAJ15AHE3/A | Lower 400 W PPPM rating, SMA (DO-214AC) package with higher RθJA (140 °C/W), same VWM/VC. | Reduced surge margin and thermal performance limits use to low-energy signal lines (e.g., USB, CAN). | Choose only for space-constrained layouts where SMB footprint is unavailable and peak surge energy is ≤400 W. |
Compared with SMBJ15A-E3/5B, the SMBJ15HE3/5B adds AEC-Q101 qualification without electrical trade-offs; versus SMAJ15AHE3/A, it delivers 50 % higher surge power handling and superior thermal dissipation in the same board area - critical for 24 V industrial power rail protection.
Availability
SMBJ15HE3/5B is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, factory automation sensors, and telecom power supplies requiring stable component supply across extended production lifecycles.
Supply support for SMBJ15HE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for demanding industrial and automotive applications.
The SMBJ series is engineered for robust transient suppression in harsh environments, targeting design-in for power rail and interface protection where AEC-Q101 compliance and 600 W surge immunity are mandatory.
FAQ
What is the clamping voltage of SMBJ15HE3/5B under a 10/1000 µs surge?
The SMBJ15HE3/5B has a maximum clamping voltage (VC) of 24.4 V at 24.6 A peak pulse current with a 10/1000 µs waveform. This value is measured per IEC 61000-4-5 test conditions and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ15HE3/5B maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C).
Is SMBJ15HE3/5B suitable for automotive applications?
Yes, SMBJ15HE3/5B is AEC-Q101 qualified, with test evidence covering HTGB, H3TRB, TC, and surge endurance per automotive reliability standards. Its RoHS-compliant construction, MSL Level 1 rating, and -55 °C to +150 °C operating range make it appropriate for under-hood and chassis-mounted modules. The SMBJ15HE3/5B is explicitly designated for automotive use in Vishay's ordering nomenclature (HE3 suffix).
How does the SMBJ15HE3/5B differ from the SMBJ15A-E3/5B?
The SMBJ15HE3/5B and SMBJ15A-E3/5B share identical electrical specifications (VWM, VBR, VC, PPPM) and SMB package dimensions, but only the HE3 version carries AEC-Q101 qualification. The "H" in HE3 denotes automotive-grade screening and traceability, while the "E3" indicates RoHS-compliant commercial termination. The SMBJ15HE3/5B is validated for automotive use cases where the SMBJ15A-E3/5B is not approved.
What is the thermal resistance of SMBJ15HE3/5B, and how does it affect layout?
The SMBJ15HE3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes minimum recommended pad layout; reducing pad area increases RθJA and risks thermal runaway during repetitive surges. For high-duty-cycle applications, designers should verify junction temperature rise using IPPM derating curves from Figure 2 in the Vishay datasheet 88392.
Can SMBJ15HE3/5B be used in bidirectional configurations?
No, SMBJ15HE3/5B is a unidirectional TVS diode, identified by the "A" suffix and cathode band marking. Bidirectional operation requires the "CA" suffix (e.g., SMBJ15CA). Using SMBJ15HE3/5B in reverse-biased configurations will result in forward conduction at ~0.7 V rather than symmetrical clamping - potentially damaging upstream circuitry. Always match device polarity to system grounding architecture.
SMBJ15HE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 15V
- Voltage - Breakdown (Min):
- 16.7V
- Voltage - Clamping (Max) @ Ipp:
- 26.9V
- Current - Peak Pulse (10/1000µs):
- 22.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ15HE3/5B FAQ
1.How can I place an order for SMBJ15HE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ15HE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ15HE3/5B reliable?
The price and inventory of SMBJ15HE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ15HE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ15HE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ15HE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ15HE3/5B?
SMBJ15HE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ15HE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ15HE3/5B?
For technical support, including SMBJ15HE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ15HE3/5B requirements.
6.How does Aetrix verify that SMBJ15HE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ15HE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ15HE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ15HE3/5B?
All SMBJ15HE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ15HE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ15HE3/5B part is unused and in its original packaging.
Return procedure for SMBJ15HE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ15HE3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)