Vishay General Semiconductor - Diodes Division SMBJ160AHE3_A/H
- Part No.:
- SMBJ160AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ160AHE3_A/H.pdf
- Description:
- TVS DIODE 160VWM 259VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ160AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 160 V stand-off voltage (VWM), 178–197 V breakdown voltage (VBR) at 1 mA, 259 V maximum clamping voltage (VC) at 2.3 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform.
For engineers reviewing the SMBJ160AHE3_A/H datasheet, SMBJ160AHE3_A/H pinout, SMBJ160AHE3_A/H application, or SMBJ160AHE3_A/H equivalent, this device is selected for high-reliability industrial power supply input protection, automotive body control module (BCM) interface surge suppression, and telecom line card transient immunity where AEC-Q101 qualification, low clamping ratio, and stable thermal performance up to +150 °C junction temperature are required.
Technical Context
This TVS diode operates as a unidirectional clamping device: under normal bias it presents high impedance (>1 µA leakage at 160 V), but triggers into low-impedance conduction when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable VBR tolerance (±5%) and fast response time (<1 ns), enabling effective suppression of ESD, lightning-induced surges, and inductive switching transients.
The SMBJ160AHE3_A/H is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), exhibits a 0.108 %/°C temperature coefficient of VBR, and achieves thermal resistance of 100 °C/W (junction-to-ambient) on standard 0.2" × 0.2" copper pads - confirming suitability for compact PCB layouts without active cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 160 V - Maximum continuous reverse operating voltage before significant leakage; defines safe DC rail protection level. |
| VBR (min/max) | 178 V / 197 V at IT = 1 mA - Confirmed breakdown range ensuring reliable triggering margin above VWM. |
| VC @ IPPM | 259 V at 2.3 A - Clamping voltage during 10/1000 µs surge; limits downstream IC stress to ≤259 V. |
| PPPM | 600 W - Peak pulse power handling capability; supports IEC 61000-4-5 Level 4 (4 kV) surge testing. |
| IFSM | 100 A - Single half-sine surge current rating (8.3 ms); validates robustness against motor or relay coil turn-off spikes. |
| TJ max | +150 °C - Maximum junction temperature; enables operation in under-hood automotive or industrial enclosures. |
| Package | SMB (DO-214AA) - Standardized surface-mount outline with cathode band marking; compatible with automated pick-and-place. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads, MSL Level 1 (JEDEC J-STD-020), RoHS-compliant and AEC-Q101 qualified. Cathode indicated by band on body; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference node | Connected to lower-potential side of protected circuit (e.g., GND or return path); defines polarity for unidirectional clamping. |
| Cathode | Clamping output / Surge current sink | Connected to higher-potential side (e.g., +160 V rail); conducts surge current to ground when VAK > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including BCM, infotainment, and ADAS sensor interfaces per stress test requirements. |
| 600 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 surge immunity up to 4 kV (line-to-ground) without degradation. |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes overvoltage overshoot during transient events, protecting sensitive 160 V-rated MOSFETs or controllers. |
| Glass passivated junction | Ensures stable VBR across temperature and lifetime, with <1 ns response time for ESD (IEC 61000-4-2) suppression. |
| MSL Level 1, 260 °C reflow compatible | Enables single-pass lead-free reflow assembly without moisture-related cracking or delamination. |
Applications
| Industrial Power Supply Input Protection | Automotive Body Control Module (BCM) Interface |
|---|---|
|
Use Scenario: Protecting 160 V DC input stage of DIN-rail power supplies against load dump and inductive kickback. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between input rail and chassis ground to shunt surge energy away from upstream rectifier and downstream DC-DC controller. Use Value: Limits transient voltage to ≤259 V, preventing damage to 200 V-rated electrolytic capacitors and SiC MOSFET gate drivers. |
Use Scenario: Safeguarding LIN bus transceivers and microcontroller I/O pins in BCMs exposed to battery voltage transients. IC Role / Device Role / Timing Role: Standoff-clamp TVS connected between LIN line and ground, triggered only during >178 V events (e.g., jump-start spikes). Use Value: Maintains signal integrity below 160 V while clamping 100 V+ surges within 1 ns, preserving LIN timing compliance. |
| Telecom Line Card Surge Suppression | Renewable Energy Inverter DC Link Protection |
|
Use Scenario: Shielding Ethernet PHY power pins and PoE injectors from induced lightning surges on outdoor cabling. IC Role / Device Role / Timing Role: Primary-level TVS on 48 V or 54 V auxiliary rails, coordinated with secondary MOVs and gas discharge tubes. Use Value: 600 W rating absorbs multi-kA surges without thermal runaway; AEC-Q101 grade ensures field reliability in uncontrolled environments. |
Use Scenario: Protecting DC link capacitors and IGBT gate drivers in solar string inverters subjected to grid fault transients. IC Role / Device Role / Timing Role: Parallel-mounted TVS on 150–170 V DC bus to clamp switching overvoltages and grid coupling spikes. Use Value: 150 °C TJ max allows direct mounting near heat-generating IGBT modules without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ160A-E3/52 | Commercial-grade (non-AEC-Q101), same VWM/VBR/VC, identical SMB package and pinout. | Approved for industrial/commercial use only; not validated for automotive temperature cycling or humidity testing. | Select when cost sensitivity outweighs automotive qualification requirements and ambient temperature remains <125 °C. |
| SMCJ160AHE3_A/H | Same electrical specs but in larger SMC (DO-214AB) package; 1500 W PPPM rating; RθJA = 40 °C/W. | Higher power handling and lower thermal resistance enable use in high-energy surge zones (e.g., AC front-end). | Choose when system-level surge tests exceed 600 W or board layout permits larger footprint for improved thermal margin. |
Compared with SMBJ160A-E3/52, the SMBJ160AHE3_A/H adds AEC-Q101 qualification for automotive deployment, while versus SMCJ160AHE3_A/H it trades 900 W extra pulse power for 40% smaller PCB area and tighter placement flexibility near sensitive nodes.
Availability
SMBJ160AHE3_A/H is available at Aetrix Electronics and suitable for industrial power supply input protection, automotive body control module (BCM) interface design, and telecom line card surge suppression requiring stable component supply, long-term lifecycle support, and AEC-Q101 traceability.
Supply support for SMBJ160AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, precision, and application-specific validation.
The SMBJ series is engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where consistent clamping performance and qualification-grade consistency are mandatory.
FAQ
What is the maximum clamping voltage of SMBJ160AHE3_A/H at its rated peak pulse current?
The SMBJ160AHE3_A/H has a maximum clamping voltage (VC) of 259 V at its specified peak pulse current (IPPM) of 2.3 A using the 10/1000 µs waveform. This value is measured under standardized test conditions per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ160AHE3_A/H maintains this clamping performance across its full operating temperature range.
Is SMBJ160AHE3_A/H suitable for automotive applications?
Yes, SMBJ160AHE3_A/H is AEC-Q101 qualified, meaning it has passed rigorous stress tests including temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing - specifically validating its use in automotive subsystems such as body control modules, lighting drivers, and infotainment power rails. The "HE3" suffix explicitly denotes this qualification, distinguishing it from commercial-grade variants like SMBJ160A-E3/52.
What does the "A" suffix indicate in SMBJ160AHE3_A/H?
The "A" in SMBJ160AHE3_A/H denotes unidirectional polarity - confirming that the device functions as a single-ended TVS diode with cathode band marking, intended for DC rail protection where surge direction is known and controlled. This contrasts with "CA" suffix parts (e.g., SMBJ160CA), which are bidirectional and used in AC-coupled or differential signal paths where polarity reversal may occur.
How does SMBJ160AHE3_A/H compare to SMAJ160AHE3_A/H in terms of power handling?
SMBJ160AHE3_A/H delivers 600 W peak pulse power (10/1000 µs), whereas SMAJ160AHE3_A/H is rated for only 400 W in the smaller SMA (DO-214AC) package. The SMB outline provides greater thermal mass and lower thermal resistance (RθJA = 100 °C/W vs. ~130 °C/W for SMAJ), making SMBJ160AHE3_A/H more robust for repeated surge exposure in high-reliability applications like industrial controls or automotive ECUs.
What is the reverse leakage current specification for SMBJ160AHE3_A/H at its stand-off voltage?
At the rated stand-off voltage (VWM) of 160 V and ambient temperature of 25 °C, the SMBJ160AHE3_A/H exhibits a maximum reverse leakage current (ID) of 1.0 µA. This low leakage ensures minimal power loss and no measurable loading on the protected 160 V DC rail during normal operation, preserving efficiency and stability in always-on systems such as telecom power supplies or automotive always-live circuits.
SMBJ160AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 160V
- Voltage - Breakdown (Min):
- 178V
- Voltage - Clamping (Max) @ Ipp:
- 259V
- Current - Peak Pulse (10/1000µs):
- 2.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ160AHE3_A/H FAQ
1.How can I place an order for SMBJ160AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ160AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ160AHE3_A/H reliable?
The price and inventory of SMBJ160AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ160AHE3_A/H is usually 5 days.
3.What payment methods are accepted for SMBJ160AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ160AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ160AHE3_A/H?
SMBJ160AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ160AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ160AHE3_A/H?
For technical support, including SMBJ160AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ160AHE3_A/H requirements.
6.How does Aetrix verify that SMBJ160AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All SMBJ160AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ160AHE3_A/H meets industry standards.
7.What is the process for return or replacement of SMBJ160AHE3_A/H?
All SMBJ160AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ160AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ160AHE3_A/H part is unused and in its original packaging.
Return procedure for SMBJ160AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ160AHE3_A/H Tags

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Diodes Incorporated

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