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Vishay General Semiconductor - Diodes Division SMBJ160AHM3_A/I
- Part No.:
- SMBJ160AHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ160AHM3_A/I.pdf
- Description:
- TVS DIODE 160VWM 259VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:5,037
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Product details
Overview
SMBJ160AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 160 V stand-off voltage (VWM), 178–197 V breakdown range (VBR at 1 mA), 259 V maximum clamping voltage (VC) at 2.3 A peak pulse current, and 600 W peak pulse power rating per 10/1000 µs waveform - deployed in industrial motor drives, telecom power supplies, and automotive body control modules.
For engineers reviewing the SMBJ160AHM3_A/I datasheet, SMBJ160AHM3_A/I pinout, SMBJ160AHM3_A/I application, or SMBJ160AHM3_A/I equivalent, key selection criteria include clamping performance under 10/1000 µs transients, thermal resistance (RθJA = 100 °C/W), AEC-Q101 qualification status, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds its specified VBR range (178–197 V). Its glass-passivated junction ensures stable breakdown characteristics and low leakage (<1.0 µA at VWM), while the low incremental surge resistance enables rapid energy absorption during ESD or lightning-induced surges.
The device is rated for 150 °C maximum junction temperature and supports repetitive surge duty cycles up to 0.01 %, with derating above 25 °C ambient per Figure 2. Its MSL Level 1 moisture sensitivity and matte tin-plated leads comply with J-STD-002 and JESD 22-B102 solderability standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 160 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC rail margin. |
| VBR (min/max) | 178 V / 197 V at 1 mA - Confirmed breakdown threshold range; ensures predictable turn-on across temperature and unit variation. |
| VC @ IPPM | 259 V at 2.3 A - Measured clamping voltage under 10/1000 µs surge; determines protected circuit's maximum transient exposure. |
| PPPM | 600 W - Peak pulse power handling capability; validates suitability for IEC 61000-4-5 Level 4 (4 kV) surge events. |
| IFSM | 100 A - Non-repetitive forward surge rating (8.3 ms half-sine); supports inrush current immunity in power supply inputs. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard 0.2" × 0.2" copper pads; informs PCB thermal design requirements. |
| TJ max | +150 °C - Maximum allowable junction temperature; enables operation in under-hood automotive and industrial enclosures. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, with matte tin-plated leads. Cathode indicated by band marking on cathode end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Surge return path | Connected to lower-potential side (e.g., GND or return rail); completes clamping loop during transient events. |
| Cathode | Reverse-biased clamping node | Connected to protected line (e.g., 160 V DC rail); avalanche conduction initiates here when VWM is exceeded. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including BCM, lighting control, and infotainment power rails. |
| 600 W peak pulse power (10/1000 µs) | Withstands IEC 61000-4-5 surge test profiles without degradation under defined mounting conditions. |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes overvoltage stress on downstream ICs such as microcontrollers or gate drivers during clamping. |
| MSL Level 1, 260 °C reflow compatible | Enables single-pass lead-free reflow assembly without preconditioning or baking. |
| Glass passivated junction | Ensures long-term stability of VBR and leakage performance across temperature and humidity stress. |
Applications
| Industrial Motor Drives | Telecom Power Supplies |
|---|---|
|
Use Scenario: Protection of 160 V DC bus against switching transients from IGBT turn-off and inductive kickback. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed across DC link capacitor to limit voltage overshoot during fault conditions. Use Value: Clamps transients to ≤259 V, preventing damage to 200 V-rated electrolytic capacitors and gate drivers. |
Use Scenario: Input-stage surge suppression on AC/DC rectified output feeding PoE injectors or base station RF modules. IC Role / Device Role / Timing Role: Primary overvoltage protector on 160 V intermediate bus, responding within <1 ns to fast-rising transients. Use Value: Absorbs 600 W pulses without failure, maintaining system uptime during lightning-induced grid disturbances. |
| Automotive Body Control Modules | Industrial Sensor Signal Conditioning |
|
Use Scenario: Protection of LIN bus transceivers and load switch FETs powered from 12 V–160 V distributed supply networks. IC Role / Device Role / Timing Role: AEC-Q101-qualified TVS on high-side power rail to suppress load dump and alternator ripple spikes. Use Value: Survives 100 A surge (8.3 ms) and maintains <1 µA leakage at 160 V, ensuring low quiescent current compliance. |
Use Scenario: Guarding analog front-end inputs of 16-bit ADCs connected to 160 V isolation amplifiers in PLC analog I/O modules. IC Role / Device Role / Timing Role: Secondary clamping element after primary MOV, limiting residual transient to sub-300 V levels. Use Value: Low capacitance (<100 pF at 0 V) avoids signal integrity degradation on 10 kHz sensor bandwidth paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ160AHE3_A/I | RoHS-compliant but not halogen-free; same electrical specs and AEC-Q101 qualification. | No difference in automotive or industrial use; differs only in material compliance (halogen content). | Select SMBJ160AHM3_A/I when halogen-free requirement applies per IPC-1752 or EU ELV Directive. |
| SMCJ160A-HM3_A/I | Same VWM, VBR, and VC, but in larger SMC (DO-214AB) package with 1500 W PPPM. | Used where higher surge energy (e.g., IEC 61000-4-5 Level 5) or improved thermal dissipation is required. | Choose SMCJ160A-HM3_A/I only if board space allows larger footprint and 1500 W rating is mandatory. |
Compared with SMBJ160AHE3_A/I, SMBJ160AHM3_A/I adds halogen-free compliance without sacrificing AEC-Q101 qualification or clamping performance; versus SMCJ160A-HM3_A/I, it trades 2.5× peak power for 30 % smaller PCB area and identical SMT process compatibility.
Availability
SMBJ160AHM3_A/I is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive body control modules requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SMBJ160AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The SMBJ series delivers standardized, high-power TVS protection in compact surface-mount packages for automotive, industrial, and telecom systems where space-constrained, high-energy transient suppression is critical.
FAQ
What is the clamping voltage of SMBJ160AHM3_A/I under a 10/1000 µs surge?
The SMBJ160AHM3_A/I exhibits a maximum clamping voltage (VC) of 259 V when subjected to its rated peak pulse current of 2.3 A under the standardized 10/1000 µs waveform. This value is measured per Figure 1 in Vishay document 88392 and defines the upper voltage limit imposed on protected circuits during surge events. The SMBJ160AHM3_A/I maintains this clamping performance across its full operating temperature range and after repeated surge exposures when mounted per recommended pad layout.
Is SMBJ160AHM3_A/I qualified for automotive applications?
Yes, SMBJ160AHM3_A/I is AEC-Q101 qualified, as confirmed in the Vishay ordering information table (page 3, footnote 1) and mechanical data section. This qualification covers stress testing for temperature cycling, humidity bias, mechanical shock, and surge robustness - making SMBJ160AHM3_A/I suitable for under-hood and cabin applications including body control modules and lighting drivers. The "HM3" suffix explicitly denotes halogen-free, RoHS-compliant, and AEC-Q101-qualified construction.
What is the standoff voltage (VWM) and why does it matter for SMBJ160AHM3_A/I?
The standoff voltage (VWM) of SMBJ160AHM3_A/I is 160 V - the maximum continuous reverse voltage the device can block without entering avalanche conduction. This parameter ensures reliable operation on 160 V DC rails while providing sufficient margin below the 178 V minimum breakdown voltage (VBR). Selecting SMBJ160AHM3_A/I with VWM = 160 V avoids false triggering during normal operation and guarantees that clamping activates only during actual overvoltage events, preserving system efficiency and longevity.
How does the SMB (DO-214AA) package of SMBJ160AHM3_A/I affect thermal performance?
The SMB (DO-214AA) package of SMBJ160AHM3_A/I delivers a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This thermal performance enables SMBJ160AHM3_A/I to sustain its 5.0 W steady-state power dissipation at 50 °C ambient and supports short-duration 600 W surges without exceeding the +150 °C maximum junction temperature. PCB layout must follow Vishay's recommended pad dimensions to achieve this RθJA value.
Can SMBJ160AHM3_A/I be used in bidirectional configurations?
No, SMBJ160AHM3_A/I is a unidirectional TVS diode, as indicated by its "A" suffix and cathode band marking. Bidirectional operation requires the "CA" suffix (e.g., SMBJ160CA). Using SMBJ160AHM3_A/I in reverse-biased configurations outside its specified unidirectional conduction path risks premature failure or undefined clamping behavior. For AC-coupled or symmetrical transient protection, select a verified bidirectional variant instead of repurposing SMBJ160AHM3_A/I.
SMBJ160AHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 160V
- Voltage - Breakdown (Min):
- 178V
- Voltage - Clamping (Max) @ Ipp:
- 259V
- Current - Peak Pulse (10/1000µs):
- 2.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ160AHM3_A/I FAQ
1.How can I place an order for SMBJ160AHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ160AHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ160AHM3_A/I reliable?
The price and inventory of SMBJ160AHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ160AHM3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ160AHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ160AHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ160AHM3_A/I?
SMBJ160AHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ160AHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ160AHM3_A/I?
For technical support, including SMBJ160AHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ160AHM3_A/I requirements.
6.How does Aetrix verify that SMBJ160AHM3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ160AHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ160AHM3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ160AHM3_A/I?
All SMBJ160AHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ160AHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ160AHM3_A/I part is unused and in its original packaging.
Return procedure for SMBJ160AHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ160AHM3_A/I Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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