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Vishay General Semiconductor - Diodes Division SMBJ160CA58HE3_A/I
- Part No.:
- SMBJ160CA58HE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ160CA58HE3_A/I.pdf
- Description:
- TVS DIODE 160VWM 259VC DO214AA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
SMBJ160CA58HE3_A/I from Vishay General Semiconductor is a bidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features 160 V standoff voltage (VWM), 93.6 V maximum clamping voltage (VC) at 6.4 A peak pulse current (IPPM), and 600 W peak pulse power (PPPM) with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor signal lines in industrial power supplies and telecom interfaces.
For engineers reviewing the SMBJ160CA58HE3_A/I datasheet, SMBJ160CA58HE3_A/I pinout, SMBJ160CA58HE3_A/I application, or SMBJ160CA58HE3_A/I equivalent, key selection criteria include bidirectional clamping capability, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This bidirectional TVS operates symmetrically across both polarities, with breakdown voltage (VBR) ranging from 178 V to 197 V at 1 mA test current and reverse leakage (ID) ≤ 1.0 µA at 160 V standoff. Its fast response time (< 1.0 ps) and low incremental surge resistance enable effective suppression of ESD, lightning-induced surges, and inductive switching transients.
The device is AEC-Q101 qualified (indicated by HE3 suffix), RoHS-compliant, and rated for junction temperatures from –55 °C to +150 °C. It meets MSL Level 1 per J-STD-020 with peak reflow temperature up to 260 °C, and uses glass-passivated chip junction construction for stable long-term reliability under repetitive surge stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 160 V - maximum continuous reverse operating voltage before clamping initiates |
| VBR min/max | 178 V / 197 V at 1 mA - ensures reliable breakdown onset within defined tolerance band |
| VC @ IPPM | 93.6 V at 6.4 A - clamping voltage during 10/1000 µs transient, limiting downstream voltage stress |
| PPPM | 600 W - peak transient energy handling capacity under standard surge waveform |
| RθJA | 100 °C/W - thermal resistance from junction to ambient, informs heatsinking requirements on PCB |
| TJ max | +150 °C - maximum allowable junction temperature for sustained operation |
| MSL Level | Level 1 - supports lead-free reflow without moisture sensitivity concerns |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, bidirectional configuration with no polarity marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H), matte tin-plated terminals solderable per J-STD-002.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry (negative half-cycle) | Conducts surge current during negative voltage excursions relative to cathode |
| Cathode | Transient current entry (positive half-cycle) | Conducts surge current during positive voltage excursions relative to anode |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal/power lines without polarity constraints |
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance |
| 600 W peak pulse rating | Supports IEC 61000-4-5 Level 4 (4 kV) surge immunity when properly laid out on PCB |
| Glass-passivated junction | Improves long-term stability of VBR and leakage under humidity and thermal stress |
| Low-profile SMB package | Reduces board space vs. SMA/SMB alternatives while maintaining 600 W rating |
Applications
| Industrial Motor Drives | Telecom Power Interfaces |
|---|---|
Use Scenario: Protection of gate drivers and DC bus sensing circuits against inductive kickback during IGBT/MOSFET switching. IC Role / Device Role / Timing Role: Bidirectional TVS clamping element placed across power rails or gate-source nodes. Use Value: Limits transient overvoltage to ≤93.6 V, preventing gate oxide rupture and false triggering in high-side switches. | Use Scenario: Surge suppression on -48 V telecom power feeds exposed to lightning-induced common-mode transients. IC Role / Device Role / Timing Role: Primary line-level TVS on input stage of DC-DC converters and hot-swap controllers. Use Value: Absorbs 600 W pulses without degradation, maintaining system uptime during outdoor cabinet surges. |
| Automotive Body Control Modules | Industrial Sensor Signal Conditioning |
Use Scenario: Protecting LIN/CAN physical layer inputs and microcontroller GPIOs from load dump and jump-start events. IC Role / Device Role / Timing Role: AEC-Q101-qualified transient suppressor on supply and data lines of BCM subassemblies. Use Value: Withstands 100 A surge (IFSM) and operates reliably from –40 °C to +125 °C ambient. | Use Scenario: Shielding analog front-ends of pressure/temperature sensors connected to long cables in factory automation. IC Role / Device Role / Timing Role: Low-capacitance bidirectional clamp on differential sensor outputs (e.g., RS-485, 4–20 mA loops). Use Value: Clamps ESD events to <94 V while adding <5 pF parasitic capacitance, preserving signal integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ160CAHE3_A/I | Same electrical specs and AEC-Q101 qualification; differs only in revision code ("58" vs blank) | No functional difference; identical layout and thermal behavior | Select when legacy BOM references non-revisioned HE3 suffix |
| SMCJ160CAHE3_A/I | Higher 1500 W PPPM rating in larger SMC (DO-214AB) package; RθJA = 40 °C/W | Requires larger PCB footprint but supports higher surge repetition rates and lower thermal rise | Choose for systems requiring >600 W single-pulse margin or extended duty-cycle operation |
Compared with SMBJ160CA58HE3_A/I, SMBJ160CAHE3_A/I offers identical performance in a functionally interchangeable form, while SMCJ160CAHE3_A/I trades compactness for higher surge robustness and improved thermal dissipation - critical for high-reliability industrial power modules.
Availability
SMBJ160CA58HE3_A/I is available at Aetrix Electronics and suitable for industrial motor drives, telecom power interfaces, automotive body control modules, and industrial sensor signal conditioning requiring stable component supply and AEC-Q101 assurance.
Supply support for SMBJ160CA58HE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for robust transient suppression in space-constrained, high-surge environments - targeting automotive, industrial, and telecom systems where failure modes must be mitigated without increasing board area.
FAQ
What does the "CA" suffix indicate in SMBJ160CA58HE3_A/I?
The "CA" suffix denotes a bidirectional configuration, meaning SMBJ160CA58HE3_A/I provides symmetrical clamping for both positive and negative voltage transients. Unlike unidirectional variants (e.g., SMBJ160A), it has no cathode marking and functions identically in either polarity - essential for protecting AC-coupled lines or floating grounds where polarity reversal may occur during surge events. This is confirmed in Vishay's documentation under "DEVICES FOR BIDIRECTION APPLICATIONS".
Is SMBJ160CA58HE3_A/I AEC-Q101 qualified?
Yes, SMBJ160CA58HE3_A/I is AEC-Q101 qualified, as indicated by the "HE3" suffix in its part number. Vishay explicitly states that base P/NHE3_X denotes RoHS-compliant and AEC-Q101 qualified versions, with "_X" representing revision codes like "A" or "B". This qualification covers stress tests including temperature cycling, high-temperature reverse bias, and surge endurance - making SMBJ160CA58HE3_A/I suitable for automotive body electronics and under-hood modules.
What is the maximum clamping voltage VC for SMBJ160CA58HE3_A/I?
The maximum clamping voltage (VC) for SMBJ160CA58HE3_A/I is 93.6 V at 6.4 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is specified in the Electrical Characteristics table on page 2 of Vishay document 88392, confirming SMBJ160CA58HE3_A/I limits transient voltage to ≤93.6 V during worst-case surge events - a critical parameter for ensuring downstream ICs remain within absolute maximum ratings.
Can SMBJ160CA58HE3_A/I replace SMBJ160A in a design?
No, SMBJ160CA58HE3_A/I cannot directly replace unidirectional SMBJ160A without circuit review. While both share the same VWM (160 V) and PPPM (600 W), SMBJ160CA58HE3_A/I is bidirectional with no polarity marking and symmetrical conduction, whereas SMBJ160A is unidirectional with a cathode band and conducts only in reverse bias. Substitution would require verifying that the application tolerates conduction during both voltage polarities - such as in AC signal paths - otherwise unintended forward conduction could disrupt operation.
What PCB pad layout is recommended for SMBJ160CA58HE3_A/I?
Vishay specifies SMBJ160CA58HE3_A/I should be mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal to achieve rated 600 W peak pulse power and thermal performance. This layout minimizes thermal resistance and ensures proper current spreading during surge events. The datasheet notes that derating applies above TA = 25 °C per Figure 2, and the device's RθJA of 100 °C/W assumes this minimum pad size - smaller pads will reduce surge capability and increase junction temperature during repeated transients.
SMBJ160CA58HE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 160V
- Voltage - Breakdown (Min):
- 178V
- Voltage - Clamping (Max) @ Ipp:
- 259V
- Current - Peak Pulse (10/1000µs):
- 2.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ160CA58HE3_A/I FAQ
1.How can I place an order for SMBJ160CA58HE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ160CA58HE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ160CA58HE3_A/I reliable?
The price and inventory of SMBJ160CA58HE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ160CA58HE3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ160CA58HE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ160CA58HE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ160CA58HE3_A/I?
SMBJ160CA58HE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ160CA58HE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ160CA58HE3_A/I?
For technical support, including SMBJ160CA58HE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ160CA58HE3_A/I requirements.
6.How does Aetrix verify that SMBJ160CA58HE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ160CA58HE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ160CA58HE3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ160CA58HE3_A/I?
All SMBJ160CA58HE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ160CA58HE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ160CA58HE3_A/I part is unused and in its original packaging.
Return procedure for SMBJ160CA58HE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ160CA58HE3_A/I Tags
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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