Vishay General Semiconductor - Diodes Division SMBJ160D-M3/I
- Part No.:
- SMBJ160D-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ160D-M3/I.pdf
- Description:
- TVS DIODE 160VWM 256VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:7,207
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ160D-M3/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, with 160 V stand-off voltage (VWM), 181–194 V breakdown voltage (VBR) at 1 mA, 2.34 A peak pulse current (IPPM), and 256 V clamping voltage (VC) under 10/1000 μs surge. It delivers 600 W peak pulse power for protecting MOSFETs and ICs against inductive switching transients in industrial motor drives.
For engineers reviewing the SMBJ160D-M3/I datasheet, SMBJ160D-M3/I pinout, SMBJ160D-M3/I application, or SMBJ160D-M3/I equivalent, key selection criteria include unidirectional polarity, ±3.5 % VBR tolerance, M3 halogen-free RoHS-compliant construction, 150 °C max junction temperature, and compatibility with automated SMT placement on minimum recommended pad layout.
Technical Context
This TVS diode operates as a clamping device in parallel with sensitive circuit nodes, entering avalanche conduction when reverse voltage exceeds VBR to limit transient energy. Its low incremental surge resistance and fast response time ensure effective suppression of 10/1000 μs waveform surges without thermal runaway under repetitive 0.01 % duty cycle conditions.
Designed for unidirectional protection, SMBJ160D-M3/I features a cathode band marking, requires no biasing, and maintains ≤0.5 μA reverse leakage at 160 V. Thermal performance is characterized by RθJA = 125 °C/W (on minimum pad) and RθJM = 20 °C/W, enabling reliable operation up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 160 V - maximum continuous reverse operating voltage before clamping begins |
| VBR min/max | 181 V / 194 V at 1 mA - tight ±3.5 % tolerance ensures predictable turn-on across production lots |
| VC @ IPPM | 256 V - clamping voltage during 2.34 A 10/1000 μs surge, defining worst-case overvoltage seen by protected device |
| PPPM | 600 W - peak surge power handling capability per single 10/1000 μs pulse |
| ID @ VWM | ≤0.5 μA - ultra-low leakage preserves signal integrity and minimizes standby power loss |
| TJ max | +150 °C - enables use in high-temperature industrial environments without derating penalties |
| RθJA | 125 °C/W - thermal resistance on minimum PCB pad layout, critical for thermal design margining |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, M3 grade (JESD 201 Class 2 whisker resistant), matte tin-plated terminals solderable per J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts surge current to ground when V > VBR |
| Anode | Reference node | Typically tied to system ground or low-impedance return path for clamping action |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables precise coordination with protected device's absolute maximum ratings without excessive voltage margin |
| 600 W PPPM (10/1000 μs) | Supports IEC 61000-4-5 Level 4 surge immunity testing in industrial equipment |
| Low 0.5 μA ID @ VWM | Minimizes loading on high-impedance sensor or communication lines during normal operation |
| MSL Level 1 (260 °C peak) | Allows standard lead-free reflow without moisture sensitivity concerns or baking requirements |
| M3 qualification | Guarantees long-term reliability in vibration-prone applications such as transportation and factory automation |
Applications
| Industrial Motor Drive Protection | Telecom Power Supply Input |
|---|---|
Use Scenario: Protecting gate drivers and bus voltage sense circuits from flyback spikes generated by IGBT/MOSFET switching in variable-frequency drives. IC Role / Device Role / Timing Role: Unidirectional TVS placed across DC bus or gate-source terminals to clamp transient overvoltages within safe limits. Use Value: Limits clamping voltage to 256 V, preventing gate oxide rupture in 600 V-class power semiconductors while surviving repeated 600 W surges. | Use Scenario: Safeguarding AC-DC front-end rectifiers and PFC controllers against lightning-induced surges on telecom central office power inputs. IC Role / Device Role / Timing Role: Primary-side surge suppression device mounted between L/N and earth ground, triggered only during overvoltage events. Use Value: Withstands 10/1000 μs surges up to 2.34 A while maintaining <0.5 μA leakage at 160 V nominal input, ensuring minimal standby loss. |
| Automotive Body Control Module | Industrial PLC Analog Input Protection |
Use Scenario: Shielding LIN bus transceivers and microcontroller I/O pins from load dump and ISO 7637-2 pulse 5a transients in 24 V vehicle systems. IC Role / Device Role / Timing Role: Unidirectional clamping diode connected between signal line and chassis ground to shunt transient energy away from IC pins. Use Value: 150 °C TJ max and M3 whisker resistance allow direct placement near hot engine bay electronics without reliability degradation. | Use Scenario: Protecting 4–20 mA current loop receivers and precision ADC front-ends from ESD and field wiring surges in factory floor instrumentation. IC Role / Device Role / Timing Role: Low-leakage TVS placed across input terminals to prevent latch-up or damage during cable hot-plug or nearby relay switching. Use Value: Tight VBR tolerance (±3.5 %) ensures consistent clamping onset across temperature, preserving measurement accuracy in 16-bit analog systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ160A-M3/I | Bidirectional variant with same VWM (160 V) but symmetric clamping in both polarities; VBR min/max = 181–194 V, VC = 256 V | Required where AC-coupled or floating signal lines need protection against both positive and negative transients | Select SMBJ160A-M3/I only if bidirectional clamping is explicitly needed; SMBJ160D-M3/I is optimal for DC-biased rails with defined polarity. |
| SMCJ160A-M3/I | Same VWM and VBR range but in larger SMC (DO-214AB) package; higher thermal mass yields RθJA = 60 °C/W and PPPM = 1500 W | Suitable for higher-energy surge environments where PCB space allows larger footprint and improved thermal dissipation | Choose SMCJ160A-M3/I when surge repetition rate or ambient temperature demands lower thermal resistance than SMBJ160D-M3/I can provide. |
Compared with SMBJ160D-M3/I, SMBJ160A-M3/I adds bidirectional capability at identical electrical specs but sacrifices unidirectional optimization, while SMCJ160A-M3/I trades compact SMB size for 2.5× higher surge power and better thermal performance-both require layout revision and are not drop-in replacements.
Availability
SMBJ160D-M3/I is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive body control modules requiring stable component supply with M3-grade reliability and halogen-free compliance.
Supply support for SMBJ160D-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and industrial-grade qualification.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for robust, high-power transient suppression in harsh environments including factory automation, energy infrastructure, and transportation systems.
FAQ
What is the breakdown voltage range of SMBJ160D-M3/I?
The SMBJ160D-M3/I has a guaranteed breakdown voltage (VBR) range of 181 V to 194 V at 1 mA test current, reflecting a tight ±3.5 % tolerance. This specification ensures consistent clamping behavior across manufacturing lots and temperature ranges, directly supporting design margining for 200 V-class protected circuits. The VBR is measured per ANSI/IEEE C62.35 standards and validated under controlled thermal conditions.
Is SMBJ160D-M3/I suitable for bidirectional transient protection?
No, SMBJ160D-M3/I is a unidirectional TVS diode, indicated by the "D" suffix and cathode band marking. It clamps only reverse-polarity transients relative to its anode-cathode orientation. For bidirectional protection, the SMBJ160A-M3/I (with "A" suffix) must be used. Using SMBJ160D-M3/I on AC or floating lines risks failure during positive-going surges due to lack of forward conduction capability.
What does the "M3" suffix signify in SMBJ160D-M3/I?
"M3" denotes Vishay's industrial-grade qualification: halogen-free molding compound, RoHS compliance, and passing JESD 201 Class 2 whisker resistance testing. This ensures long-term mechanical and electrical stability in high-vibration, high-humidity, or thermally cycled environments-critical for automotive, railway, and industrial control applications where field reliability is non-negotiable.
How much peak pulse current can SMBJ160D-M3/I handle?
SMBJ160D-M3/I handles a peak pulse current (IPPM) of 2.34 A under the standard 10/1000 μs double-exponential surge waveform. This value is derived from its 600 W peak pulse power rating and 256 V clamping voltage (IPPM = PPPM / VC). It is rated for repetitive operation at 0.01 % duty cycle, making it suitable for infrequent but high-energy transients like inductive switch-off spikes.
What is the thermal resistance of SMBJ160D-M3/I on standard PCB layout?
When mounted on the minimum recommended copper pad layout per Vishay's datasheet, SMBJ160D-M3/I exhibits a typical junction-to-ambient thermal resistance (RθJA) of 125 °C/W. This value is essential for calculating maximum allowable power dissipation at elevated ambient temperatures and confirms the device's suitability for compact industrial PCBs without dedicated heatsinking.
SMBJ160D-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 160V
- Voltage - Breakdown (Min):
- 181V
- Voltage - Clamping (Max) @ Ipp:
- 256V
- Current - Peak Pulse (10/1000µs):
- 2.34A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ160D-M3/I FAQ
1.How can I place an order for SMBJ160D-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ160D-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ160D-M3/I reliable?
The price and inventory of SMBJ160D-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ160D-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ160D-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ160D-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ160D-M3/I?
SMBJ160D-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ160D-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ160D-M3/I?
For technical support, including SMBJ160D-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ160D-M3/I requirements.
6.How does Aetrix verify that SMBJ160D-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ160D-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ160D-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ160D-M3/I?
All SMBJ160D-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ160D-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ160D-M3/I part is unused and in its original packaging.
Return procedure for SMBJ160D-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ160D-M3/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)