Vishay General Semiconductor - Diodes Division SMBJ160-E3/5B
- Part No.:
- SMBJ160-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ160-E3/5B.pdf
- Description:
- TVS DIODE 160VWM 287VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:7,971
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ160-E3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode designed for robust overvoltage protection in power rails and signal lines. It features a 160 V standoff voltage (VWM), 178–197 V breakdown range (VBR at 1 mA), 259 V clamping voltage (VC) at 2.3 A peak pulse current, and 600 W peak pulse power rating per 10/1000 µs waveform - deployed in industrial motor drives, telecom power supplies, and automotive body control modules.
For engineers reviewing the SMBJ160-E3/5B datasheet, SMBJ160-E3/5B pinout, SMBJ160-E3/5B application, or SMBJ160-E3/5B equivalent, key selection criteria include its unidirectional polarity, SMB (DO-214AA) package compatibility with automated SMT placement, AEC-Q101 qualification eligibility (via HE3 suffix), and precise clamping performance under repetitive surge conditions.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when reverse-biased voltage exceeds VBR, it avalanches into low-impedance conduction to divert surge energy away from downstream ICs or MOSFETs. Its glass-passivated junction ensures stable breakdown characteristics and long-term reliability under repeated transients.
Thermal design relies on its RθJA = 100 °C/W (typ.) and RθJL = 20 °C/W (typ.), requiring minimum 5.0 mm × 5.0 mm copper pads per terminal for rated 600 W pulse handling. It supports surge currents up to 2.3 A (10/1000 µs) while maintaining clamping below 259 V - critical for protecting 150 V-rated power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 160 V - maximum continuous reverse operating voltage before clamping begins; sets upper limit for protected circuit's nominal rail voltage. |
| VBR (min/max) | 178 V / 197 V at 1 mA - guaranteed avalanche onset window; ensures predictable turn-on margin above VWM. |
| VC @ IPPM | 259 V at 2.3 A (10/1000 µs) - maximum clamped voltage seen by protected device during worst-case surge. |
| PPPM | 600 W - peak pulse power dissipation capability; defines energy-handling capacity for transient suppression. |
| IFSM | 100 A - non-repetitive forward surge current rating (8.3 ms half-sine); validates robustness against inrush or fault currents. |
| TJ max. | +150 °C - maximum junction temperature; enables operation in under-hood or high-ambient industrial environments. |
| Package | SMB (DO-214AA) - standardized 2-pin surface-mount outline with 5.59 mm × 4.06 mm footprint and 2.20 mm height; compatible with J-STD-020 MSL Level 1 reflow. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads; cathode indicated by band marking on one end; polarity-critical for unidirectional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference node | Connected to ground or low-voltage return path; completes clamping loop during reverse transient events. |
| Cathode | Protected line input | Connected to the line being protected (e.g., 160 V DC bus); avalanche conduction occurs when cathode-to-anode voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables reliable suppression of lightning-induced surges and inductive switching spikes in 48–200 V systems without thermal runaway. |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients, improving protection margin for sensitive gate drivers and ADC front-ends. |
| Glass passivated junction | Ensures stable VBR tolerance and long-term parameter stability across temperature and lifetime stress conditions. |
| MSL Level 1 (260 °C peak) | Supports standard lead-free reflow profiles without preconditioning; eliminates moisture-related popcorning risk in high-volume SMT assembly. |
| AEC-Q101 qualification path | RoHS-compliant E3 suffix allows upgrade to HE3 variant for automotive applications requiring validated reliability (e.g., BCM, ADAS power supplies). |
Applications
| Industrial Motor Drives | Telecom Power Supplies |
|---|---|
Use Scenario: Protection of IGBT gate driver supply rails against flyback voltage spikes from inductive load switching. IC Role / Device Role / Timing Role: Shunt clamping device placed between 15 V gate supply and ground, triggered within <1 ns upon overvoltage. Use Value: Limits gate-source voltage to ≤259 V during 600 W surges, preventing IGBT destruction while maintaining driver functionality. |
Use Scenario: Input-stage surge suppression on 48 V DC-DC converter front-end exposed to telecom central office lightning transients. IC Role / Device Role / Timing Role: Primary overvoltage clamp on bulk input rail, absorbing 10/1000 µs surges before upstream filtering. Use Value: Clamps 160 V nominal rail to 259 V during 2.3 A surge, preserving downstream rectifier and controller IC integrity. |
| Automotive Body Control Modules | Consumer Appliance Power Boards |
Use Scenario: Protection of LIN bus transceivers and microcontroller I/O pins against load dump and jump-start transients. IC Role / Device Role / Timing Role: Unidirectional TVS on 12 V supply line feeding MCU peripherals; cathode tied to VCC, anode to chassis ground. Use Value: Withstands 100 A surge (8.3 ms) and clamps to 259 V, ensuring MCU reset logic remains functional after ISO 7637-2 Pulse 5a events. |
Use Scenario: Overvoltage safeguard on AC-DC adapter output rails in smart home hubs and HVAC controllers. IC Role / Device Role / Timing Role: Final-stage clamp on regulated 5–24 V outputs, guarding against capacitor failure or regulator latch-up. Use Value: Provides fail-safe shutdown margin: clamping at 259 V prevents secondary damage to USB-PD controllers and Wi-Fi SoCs rated ≤30 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ160A-M3/5B | Halogen-free, RoHS-compliant variant with identical electrical specs and SMB package; same VWM, VBR, VC, PPPM. | No functional difference; selected where halogen-free materials are mandated by OEM environmental policies. | Direct drop-in replacement if halogen-free compliance is required; no layout or validation changes needed. |
| SMCJ160A-E3/2A | Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package; higher thermal mass yields RθJA = 50 °C/W vs. 100 °C/W. | Better sustained power handling in high-temperature enclosures; requires larger PCB footprint (7.11 mm × 6.22 mm vs. 5.59 mm × 4.06 mm). | Choose when ambient temperature exceeds 85 °C or when >600 W single-pulse derating margin is critical; not pin-compatible. |
Compared with SMBJ160-E3/5B, the M3/5B variant offers identical protection performance with halogen-free construction, while the SMCJ160A-E3/2A provides superior thermal derating at the cost of board space - enabling optimized trade-offs between environmental compliance, thermal headroom, and layout density.
Availability
SMBJ160-E3/5B is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive body control modules requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SMBJ160-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series was engineered for high-energy transient suppression in compact SMT formats, targeting automotive, industrial, and telecom systems where space-constrained 600 W clamping performance is essential.
FAQ
What is the clamping voltage of SMBJ160-E3/5B at its rated peak pulse current?
The SMBJ160-E3/5B has a maximum clamping voltage (VC) of 259 V when subjected to its specified peak pulse current of 2.3 A using the 10/1000 µs waveform. This value is measured under standardized test conditions per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during surge events - a critical parameter for ensuring downstream components remain within safe operating limits.
Is SMBJ160-E3/5B suitable for automotive applications?
SMBJ160-E3/5B itself is commercial-grade, but Vishay offers the AEC-Q101 qualified variant SMBJ160AHE3_B/I (with HE3 suffix) in the same SMB package. The SMBJ160-E3/5B shares identical electrical characteristics and thermal behavior, making it a direct baseline for qualification; however, only the HE3/HM3 versions are certified for automotive use per AEC-Q101 stress testing requirements.
What does the "-E3/5B" suffix indicate in SMBJ160-E3/5B?
The "-E3" denotes RoHS-compliant, commercial-grade construction with matte tin-plated leads, while "/5B" specifies packaging in 13-inch diameter plastic tape and reel containing 3200 units. This format supports high-speed pick-and-place assembly and aligns with J-STD-002 solderability standards - confirming SMBJ160-E3/5B is optimized for automated manufacturing environments.
How does SMBJ160-E3/5B differ from bidirectional TVS diodes like SMBJ160CA?
SMBJ160-E3/5B is unidirectional and functions only under reverse bias, with polarity-sensitive mounting (cathode to protected line). In contrast, SMBJ160CA is bidirectional and symmetrical - suppressing surges of either polarity without regard to orientation. The unidirectional SMBJ160-E3/5B offers lower leakage and tighter VBR tolerance, making it preferable for DC rail protection where polarity is fixed.
What is the maximum operating temperature for SMBJ160-E3/5B?
The SMBJ160-E3/5B has a maximum junction temperature (TJ) rating of +150 °C and an operating ambient range of -55 °C to +150 °C. Its thermal resistance values (RθJA = 100 °C/W, RθJL = 20 °C/W) require adherence to Vishay's recommended 5.0 mm × 5.0 mm copper pad layout to sustain full 600 W pulse ratings - especially critical in enclosed industrial enclosures or under-hood automotive locations.
SMBJ160-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 160V
- Voltage - Breakdown (Min):
- 178V
- Voltage - Clamping (Max) @ Ipp:
- 287V
- Current - Peak Pulse (10/1000µs):
- 2.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ160-E3/5B FAQ
1.How can I place an order for SMBJ160-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ160-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ160-E3/5B reliable?
The price and inventory of SMBJ160-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ160-E3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ160-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ160-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ160-E3/5B?
SMBJ160-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ160-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ160-E3/5B?
For technical support, including SMBJ160-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ160-E3/5B requirements.
6.How does Aetrix verify that SMBJ160-E3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ160-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ160-E3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ160-E3/5B?
All SMBJ160-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ160-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ160-E3/5B part is unused and in its original packaging.
Return procedure for SMBJ160-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ160-E3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)