Vishay General Semiconductor - Diodes Division SMBJ16AHE3_A/I
- Part No.:
- SMBJ16AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ16AHE3_A/I.pdf
- Description:
- TVS DIODE 16VWM 26VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ16AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for clamping inductive switching transients and ESD events. It features a 16 V stand-off voltage (VWM), 26.0 V maximum clamping voltage (VC) at 23.1 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 μs waveform), commonly deployed to protect MOSFET gates, sensor signal lines, and microcontroller I/O in industrial motor drives.
For engineers reviewing the SMBJ16AHE3_A/I datasheet, SMBJ16AHE3_A/I pinout, SMBJ16AHE3_A/I application, or SMBJ16AHE3_A/I equivalent, key selection criteria include its AEC-Q101 qualification status, low 1.0 μA reverse leakage at VWM, 0.089 %/°C temperature coefficient of breakdown voltage, and compatibility with automated SMT placement on standard PCB pad layouts per JEDEC DO-214AA footprint.
Technical Context
This TVS diode operates as a unidirectional clamping device with cathode-banded polarity, leveraging a glass-passivated silicon junction for stable avalanche breakdown behavior. Its 17.8–19.7 V breakdown voltage range (VBR at 1.0 mA IT) ensures reliable turn-on before system-level damage thresholds are exceeded in 12 V and 15 V rail protection schemes.
The device delivers 600 W surge capability under standardized 10/1000 μs waveform conditions, with thermal resistance of 100 °C/W (junction-to-ambient) and 20 °C/W (junction-to-lead), enabling robust transient energy absorption without thermal runaway when mounted on 5.0 mm × 5.0 mm copper pads per terminal.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 16 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC working limit for 12–15 V systems. |
| VBR min/max | 17.8 V / 19.7 V - Breakdown occurs within this range at 1.0 mA test current; ensures predictable turn-on margin above VWM. |
| VC @ IPPM | 26.0 V - Clamped voltage at 23.1 A peak pulse current; limits downstream voltage stress during worst-case transients. |
| IPPM | 23.1 A - Peak surge current supported under 10/1000 μs waveform; determines survivability against lightning or inductive kick events. |
| ID @ VWM | 1.0 μA - Reverse leakage at rated stand-off voltage; low value minimizes standby power loss and avoids false triggering. |
| PPPM | 600 W - Peak pulse power rating; defines transient energy handling capacity per IEEE C62.35-compliant surge profile. |
| TJ max | +150 °C - Maximum junction temperature; supports operation in under-hood automotive and high-temperature industrial environments. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; meets UL 94 V-0 flammability rating and MSL Level 1 (peak reflow 260 °C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias; connected to protected circuit ground or low-side reference. | Provides return path during clamping; must be routed with low-inductance trace to minimize voltage overshoot. |
| Cathode | Current exit point in forward bias; marked by band on package body; connects to protected line (e.g., signal or power rail). | Defines polarity-sensitive clamping direction; reverse connection renders device non-functional for unidirectional suppression. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing-enables use in ADAS sensors and body control modules. |
| 600 W peak pulse power | Handles high-energy transients from relay coil de-energization or load dump without degradation, per 10/1000 μs waveform. |
| Glass passivated junction | Ensures stable VBR over time and temperature, with minimal parameter drift across 1000+ surge events. |
| Low incremental surge resistance | Minimizes VC rise under high di/dt conditions, improving clamping precision for fast-rising ESD pulses. |
| MSL Level 1 rating | Allows unlimited floor life and single-reflow processing at 260 °C peak, simplifying manufacturing flow for high-volume SMT lines. |
Applications
| Automotive Sensor Protection | Industrial Motor Drive I/O |
|---|---|
|
Use Scenario: Protecting analog output lines of pressure or temperature sensors in engine control units exposed to load dump and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional clamping element placed between sensor output and MCU ADC input, referenced to chassis ground. Use Value: Limits transient excursions to ≤26.0 V during 12 V system load dump events, preserving ADC integrity and preventing latch-up. |
Use Scenario: Shielding digital enable/disable signals driving gate drivers in variable-frequency AC motor inverters. IC Role / Device Role / Timing Role: Fast-response TVS on isolated logic-level control lines subject to cross-talk and inductive coupling from high-current switching nodes. Use Value: Clamps coupled spikes within 1 ns response time, maintaining clean logic thresholds and avoiding false gate triggering. |
| Consumer Power Adapter Interface | Telecom Line Card Surge Protection |
|
Use Scenario: Safeguarding USB-C CC and VCONN lines in portable device chargers subjected to human-body-model ESD events. IC Role / Device Role / Timing Role: Standoff-rated TVS placed directly at connector interface, with cathode tied to signal line and anode to system ground. Use Value: Absorbs ±8 kV contact discharge per IEC 61000-4-2 while maintaining <1.0 μA leakage at 5 V nominal bus voltage. |
Use Scenario: Front-end protection of Ethernet PHY differential pairs and management interfaces on telecom base station line cards. IC Role / Device Role / Timing Role: Discrete unidirectional suppressor on each signal line, coordinated with common-mode chokes to meet GR-1089-CORE Level 4 requirements. Use Value: Withstands 10/700 μs telecom surges up to 4 kV via derated IPPM performance, preserving signal integrity below 100 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ16AHM3_A/I | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. | No functional difference; selected where halogen-free material compliance is mandated by OEM environmental policy. | Direct drop-in replacement if halogen-free content is required; same footprint, thermal, and clamping behavior. |
| SMCJ16AHE3_A/I | Same VWM/VBR/VC specs but in larger SMC (DO-214AB) package with higher 1500 W PPPM rating and lower RθJA (50 °C/W). | Better suited for high-energy industrial surge environments where PCB space allows larger footprint and enhanced thermal dissipation. | Choose when system-level surge tests exceed 600 W; requires layout change due to larger 7.11 mm × 6.22 mm outline vs. SMB's 4.57 mm × 3.94 mm. |
Compared with SMBJ16AHE3_A/I, the SMBJ16AHM3_A/I offers identical protection performance with halogen-free construction, while the SMCJ16AHE3_A/I provides 2.5× higher surge power handling at the cost of increased board area and different thermal management requirements.
Availability
SMBJ16AHE3_A/I is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial motor drive I/O protection, and telecom line card surge suppression requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SMBJ16AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-reliability transient suppression in automotive, industrial, and communications infrastructure, delivering consistent clamping performance under repetitive surge stress and extended temperature operation.
FAQ
What is the maximum clamping voltage of SMBJ16AHE3_A/I under surge conditions?
The SMBJ16AHE3_A/I exhibits a maximum clamping voltage (VC) of 26.0 V when subjected to its rated peak pulse current of 23.1 A under the standard 10/1000 μs waveform. This value is measured at the device terminals and represents the upper voltage limit imposed on the protected circuit during transient events, ensuring downstream components remain within safe operating margins.
Is SMBJ16AHE3_A/I suitable for automotive applications?
Yes, SMBJ16AHE3_A/I is AEC-Q101 qualified and explicitly designated for automotive use with ordering code suffix HE3. It undergoes rigorous stress testing-including temperature cycling, high-temperature reverse bias, and ESD-to ensure reliability in engine control units, body electronics, and ADAS sensor modules operating from −40 °C to +125 °C ambient.
How does the SMBJ16AHE3_A/I differ from bidirectional variants like SMBJ16CA?
The SMBJ16AHE3_A/I is unidirectional, with polarity defined by a cathode band and intended for DC-biased lines where only one polarity of transient needs suppression. In contrast, SMBJ16CA is bidirectional, offering symmetrical clamping for AC-coupled or floating signal paths, and carries a "CA" suffix per Vishay's naming convention-not interchangeable without circuit redesign.
What is the thermal resistance of SMBJ16AHE3_A/I, and how does it affect layout?
SMBJ16AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W and junction-to-lead (RθJL) of 20 °C/W. To maintain safe operation under repeated surges, Vishay specifies mounting on 0.2″ × 0.2″ (5.0 mm × 5.0 mm) copper pads per terminal-reducing effective RθJA and preventing thermal runaway during high-duty-cycle transients.
Can SMBJ16AHE3_A/I be used in place of SMBJ15A or SMBJ17A?
No-SMBJ16AHE3_A/I is not a direct substitute for SMBJ15A (15 V VWM) or SMBJ17A (17 V VWM), as its 16 V stand-off voltage defines its precise operating window. Substituting alters the clamping threshold relative to system rail voltage, risking premature conduction or insufficient protection; each variant must be selected based on exact VWM matching to the protected circuit's nominal voltage.
SMBJ16AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 16V
- Voltage - Breakdown (Min):
- 17.8V
- Voltage - Clamping (Max) @ Ipp:
- 26V
- Current - Peak Pulse (10/1000µs):
- 23.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ16AHE3_A/I FAQ
1.How can I place an order for SMBJ16AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ16AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ16AHE3_A/I reliable?
The price and inventory of SMBJ16AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ16AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ16AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ16AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ16AHE3_A/I?
SMBJ16AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ16AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ16AHE3_A/I?
For technical support, including SMBJ16AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ16AHE3_A/I requirements.
6.How does Aetrix verify that SMBJ16AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ16AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ16AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ16AHE3_A/I?
All SMBJ16AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ16AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ16AHE3_A/I part is unused and in its original packaging.
Return procedure for SMBJ16AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ16AHE3_A/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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