Vishay General Semiconductor - Diodes Division SMBJ16AHM3_A/I
- Part No.:
- SMBJ16AHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ16AHM3_A/I.pdf
- Description:
- TVS DIODE 16VWM 26VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:9,867
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ16AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping inductive switching transients and ESD events on power and signal lines. It features 16 V stand-off voltage (VWM), 26.0 V maximum clamping voltage (VC) at 23.1 A peak pulse current, 600 W peak pulse power (10/1000 µs), and operates across -55 °C to +150 °C junction temperature range - deployed in automotive power rail protection and industrial sensor interface circuits.
For engineers reviewing the SMBJ16AHM3_A/I datasheet, SMBJ16AHM3_A/I pinout, SMBJ16AHM3_A/I application, or SMBJ16AHM3_A/I equivalent, this page delivers verified electrical specs, thermal derating behavior, AEC-Q101 qualification status, clamping performance under standardized surge waveforms, and direct alternatives with documented parameter divergence.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds its 17.8–19.7 V breakdown range (VBR at 1 mA). Its low incremental surge resistance ensures minimal voltage overshoot during fast transients, while the glass-passivated junction enables stable leakage (<1.0 µA at 16 V) and repeatable clamping.
The device is rated for 100 A non-repetitive forward surge (8.3 ms half-sine) and exhibits 0.089 %/°C temperature coefficient of VBR. Thermal resistance is 100 °C/W (junction-to-ambient, on 0.2" × 0.2" copper pads), limiting continuous dissipation to 5.0 W at 50 °C ambient - requiring layout-aware thermal design for sustained surge duty.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 16 V - maximum DC or RMS voltage the device blocks without clamping; defines safe operating margin below breakdown |
| VBR (min/max) | 17.8 V / 19.7 V at 1 mA - guaranteed avalanche initiation window; determines minimum overvoltage threshold for protection activation |
| VC @ IPPM | 26.0 V at 23.1 A - clamped voltage during 10/1000 µs surge; sets worst-case stress on downstream ICs or MOSFETs |
| PPPM | 600 W - peak transient power handling capability; defines survivability against lightning-induced or inductive kick energy |
| IFSM | 100 A - single half-sine surge rating (8.3 ms); validates robustness against motor-driver or relay-coil turn-off spikes |
| TJ max. | +150 °C - maximum junction temperature; constrains PCB copper area and airflow requirements for high-duty-cycle applications |
| RθJA | 100 °C/W - thermal resistance to ambient on standard pad layout; directly impacts steady-state power derating above 25 °C |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, MSL Level 1 (260 °C peak reflow). Cathode indicated by band; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts surge current to ground when VREV > VBR; polarity-critical for unidirectional operation |
| Anode (unbanded end) | Reference node | Typically tied to system ground or lower-potential rail; completes conduction path during clamping event |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and body electronics per stress test requirements - supports PPAP and long-term reliability claims |
| 600 W peak pulse power (10/1000 µs) | Handles high-energy transients common in 12 V/24 V vehicle systems and industrial PLC I/O without degradation |
| Low clamping ratio (VC/VWM = 1.625) | Minimizes overvoltage stress on protected ICs - critical for 16 V-rated microcontrollers or CAN transceivers |
| Matte tin-plated leads | Ensures solderability per J-STD-002 and JESD 22-B102; eliminates whisker risk (JESD 201 Class 2 compliant) |
| MSL Level 1 moisture sensitivity | Allows indefinite floor life before reflow; eliminates bake requirement and simplifies SMT line logistics |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Clamp |
|---|---|
|
Use Scenario: Suppressing load-dump spikes (up to 35 V, 100 ms) and alternator ripple on 12 V battery-fed ECUs. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and LDO input to limit voltage seen by regulator and MCU. Use Value: Clamps transients to ≤26.0 V, preventing LDO overvoltage shutdown and preserving MCU brown-out immunity. |
Use Scenario: Protecting analog outputs (e.g., 4–20 mA transmitter) from ESD and cable discharge events in factory-floor environments. IC Role / Device Role / Timing Role: TVS mounted at connector entry point, shunting surge current away from precision op-amp and DAC circuitry. Use Value: Sub-1 ns response time and <1.0 µA leakage at 16 V preserve signal integrity and calibration stability. |
| Telecom DC Power Input Stage | Consumer Appliance Motor Driver Gate Protection |
|
Use Scenario: Guarding PoE-powered equipment inputs against surges induced by nearby AC wiring or lightning coupling. IC Role / Device Role / Timing Role: Primary clamping element upstream of DC-DC converter, sized to absorb IEEE 802.3af/bt surge profiles. Use Value: 600 W rating and 23.1 A IPPM meet IEC 61000-4-5 Level 3 (1 kV/2 Ω) compliance margin. |
Use Scenario: Shielding N-channel MOSFET gate drivers from inductive kickback during BLDC motor commutation. IC Role / Device Role / Timing Role: TVS connected between gate and source to clamp Miller-induced voltage spikes exceeding VGS(max). Use Value: 16 V VWM aligns with typical 12 V gate drive rails; 26.0 V VC stays safely below 30 V VGS(max) limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ16AHE3_A/I | RoHS-compliant but not halogen-free; same VWM, VBR, VC, PPPM, and AEC-Q101 qualification | No difference in circuit performance or reliability; differs only in material composition (halogen content) | Select SMBJ16AHE3_A/I if halogen-free requirement is waived and cost optimization is prioritized |
| SMBJ16CAHM3_A/I | Bidirectional variant; symmetric VBR (17.8–19.7 V) in both polarities; identical VC and PPPM | Required for AC-coupled or floating signal lines where polarity reversal occurs (e.g., RS-485, audio) | Choose SMBJ16CAHM3_A/I only when bidirectional clamping is mandated - unidirectional SMBJ16AHM3_A/I is unsuitable for AC signals |
Compared with SMBJ16AHE3_A/I, SMBJ16AHM3_A/I adds halogen-free compliance without altering electrical behavior; versus SMBJ16CAHM3_A/I, it trades bidirectional capability for optimized unidirectional clamping margin and lower capacitance - making SMBJ16AHM3_A/I the preferred choice for DC power rail and grounded signal protection.
Availability
SMBJ16AHM3_A/I is available at Aetrix Electronics and suitable for automotive ECU designs, industrial sensor modules, telecom power supplies, and consumer appliance motor control systems requiring stable component supply and AEC-Q101 assurance.
Supply support for SMBJ16AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, power efficiency, and automotive-grade qualification.
The SMBJ series targets board-level transient protection in harsh environments - engineered for fast response, repeatable clamping, and long-term stability in automotive, industrial, and telecom infrastructure applications.
FAQ
What is the breakdown voltage range for SMBJ16AHM3_A/I?
The SMBJ16AHM3_A/I has a guaranteed breakdown voltage (VBR) range of 17.8 V to 19.7 V at 1 mA test current, measured per ANSI/IEEE C62.35. This window defines the minimum overvoltage level at which the device initiates avalanche conduction and begins clamping - critical for ensuring protection activates before downstream components exceed absolute maximum ratings. The value is confirmed in Vishay's official datasheet revision 09-Jan-2024, Document Number 88392.
Is SMBJ16AHM3_A/I qualified for automotive use?
Yes, SMBJ16AHM3_A/I is AEC-Q101 qualified, as indicated by the "HM3" suffix and explicitly stated in the Vishay datasheet. It meets stress test requirements for temperature cycling, humidity bias, mechanical shock, and high-temperature operating life - making it suitable for under-hood and chassis-mounted automotive electronics. The qualification applies specifically to the HM3 variant, not generic SMBJ16A parts.
What is the maximum clamping voltage of SMBJ16AHM3_A/I under surge conditions?
The SMBJ16AHM3_A/I clamps to a maximum of 26.0 V when subjected to its rated 23.1 A peak pulse current (IPPM) using the standard 10/1000 µs waveform. This VC value represents the worst-case voltage imposed on protected circuitry during transient events and is measured with the device mounted on 0.2" × 0.2" copper pads per JEDEC standards. It remains stable across temperature and lifetime under specified surge repetition rates.
Does SMBJ16AHM3_A/I have halogen-free construction?
Yes, SMBJ16AHM3_A/I uses halogen-free molding compound and terminations, complying with IEC 61249-2-21 and regional environmental directives. The "HM3" suffix explicitly denotes halogen-free, RoHS-compliant, and AEC-Q101-qualified construction - distinct from the "HE3" (RoHS only) and "E3" (commercial grade) variants. This is verified in Vishay's ordering information table and material categorization documentation.
What is the thermal resistance of SMBJ16AHM3_A/I in standard mounting conditions?
The SMBJ16AHM3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as defined in the Vishay datasheet. This value governs power derating above 25 °C ambient and must be used to calculate allowable continuous power dissipation - for example, at 70 °C ambient, maximum PD drops to ~3.5 W. Layout deviations significantly impact actual RθJA.
SMBJ16AHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 16V
- Voltage - Breakdown (Min):
- 17.8V
- Voltage - Clamping (Max) @ Ipp:
- 26V
- Current - Peak Pulse (10/1000µs):
- 23.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ16AHM3_A/I FAQ
1.How can I place an order for SMBJ16AHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ16AHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ16AHM3_A/I reliable?
The price and inventory of SMBJ16AHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ16AHM3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ16AHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ16AHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ16AHM3_A/I?
SMBJ16AHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ16AHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ16AHM3_A/I?
For technical support, including SMBJ16AHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ16AHM3_A/I requirements.
6.How does Aetrix verify that SMBJ16AHM3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ16AHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ16AHM3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ16AHM3_A/I?
All SMBJ16AHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ16AHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ16AHM3_A/I part is unused and in its original packaging.
Return procedure for SMBJ16AHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ16AHM3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

