My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ16AHM3_B/I
- Part No.:
- SMBJ16AHM3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ16AHM3_B/I.pdf
- Description:
- 600W,16V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,271
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ16AHM3_B/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 16 V stand-off voltage (VWM), 17.8–19.7 V breakdown voltage (VBR) at 1 mA, 26.0 V maximum clamping voltage (VC) at 23.1 A peak pulse current (IPPM), and 600 W peak pulse power (PPPM) capability with 10/1000 µs waveform - deployed in industrial motor drives to safeguard MOSFET gate drivers against inductive switching transients.
For engineers reviewing the SMBJ16AHM3_B/I datasheet, SMBJ16AHM3_B/I pinout, SMBJ16AHM3_B/I application, or SMBJ16AHM3_B/I equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and halogen-free RoHS-compliant construction - all critical for automotive-grade ESD/surge protection design-in.
Technical Context
This TVS diode operates as a unidirectional clamping device: reverse-biased during normal operation (leakage <1.0 µA at 16 V), then rapidly avalanches when transient voltage exceeds VBR to limit downstream voltage to ≤26.0 V. Its glass-passivated junction ensures stable breakdown characteristics and low incremental surge resistance.
Designed for automated SMT assembly, it meets J-STD-020 MSL Level 1 (peak reflow 260 °C), JESD201 Class 2 whisker resistance, and UL 94 V-0 flammability rating. The cathode band denotes polarity; no marking on bidirectional variants.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 16 V - maximum continuous reverse operating voltage before leakage rises above 1.0 µA; defines safe DC rail margin. |
| VBR (min/max) | 17.8 V / 19.7 V at IT = 1 mA - guaranteed avalanche initiation window; ensures consistent turn-on across production lots. |
| VC @ IPPM | 26.0 V at 23.1 A - clamped voltage under 10/1000 µs surge; determines maximum stress on protected IC inputs. |
| PPPM | 600 W - peak transient energy absorption capacity; enables protection against IEC 61000-4-5 Level 4 surges. |
| TJ max. | +150 °C - maximum junction temperature; supports operation in under-hood automotive environments. |
| RθJA | 100 °C/W - thermal resistance junction-to-ambient on standard 0.2" × 0.2" copper pads; informs PCB thermal layout requirements. |
| Package | SMB (DO-214AA) - industry-standard 2-pin SMD outline; compatible with high-volume pick-and-place equipment. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, cathode indicated by band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lowest potential node; completes clamping path during transient events. |
| Cathode | Protected line input | Connected to the line being protected (e.g., 12 V supply rail); avalanche conduction occurs from cathode to anode. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables compliance with IEC 61000-4-5 surge immunity up to 4 kV (line-earth) without derating. |
| AEC-Q101 qualified | Validated for automotive electronics use including engine control units and body control modules. |
| Halogen-free & RoHS-compliant (HM3 suffix) | Fulfills EU ELV Directive and IPC-1752A material declaration requirements for Tier 1 suppliers. |
| MSL Level 1 moisture sensitivity | Allows unlimited floor life and single-reflow processing without dry-pack or baking. |
| Low clamping ratio (VC/VBR ≈ 1.42) | Minimizes overvoltage overshoot during fast transients, reducing risk of latch-up in protected CMOS ICs. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: 12 V battery-supplied ECUs exposed to load dump (ISO 16750-2) and jump-start transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power input and local regulator to clamp surges before they reach LDOs or microcontrollers. Use Value: Limits voltage to ≤26.0 V during 35 V/100 ms load dump events, preventing permanent damage to 3.3 V logic circuitry downstream. |
Use Scenario: Analog sensor outputs (e.g., pressure, temperature) routed through long cables in factory automation cabinets. IC Role / Device Role / Timing Role: TVS mounted at connector entry point to shunt induced EFT/burst noise (IEC 61000-4-4) and lightning-induced surges. Use Value: Clamps 4 kV contact discharge transients within 1 ns, preserving ±0.1% measurement accuracy of 24-bit ADC front-ends. |
| DC Motor Drive Gate Protection | Telecom Power Supply Input Stage |
|
Use Scenario: High-side N-channel MOSFET gate drivers in brushed DC motor controllers subjected to back-EMF spikes. IC Role / Device Role / Timing Role: TVS connected between gate and source to suppress >100 V inductive kickback before it exceeds gate oxide breakdown. Use Value: Absorbs 600 W pulses with <1 ns response, enabling use of cost-optimized 20 V-rated gate drivers instead of 30 V+ variants. |
Use Scenario: Primary-side input of AC/DC adapters in VoIP phones and DSL modems facing AC mains surges. IC Role / Device Role / Timing Role: First-line protection after bridge rectifier, clamping rectified surges before bulk capacitor and controller IC. Use Value: Withstands repeated 600 W surges at 0.01% duty cycle, extending adapter MTBF beyond 10 years in field deployment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ16AHE3_B/I | RoHS-compliant but not halogen-free; same VWM, VBR, VC, and PPPM ratings. | Lacks halogen-free certification required by some automotive OEMs (e.g., BMW GS95024-3). | Select when halogen content is unrestricted and cost optimization is prioritized over material compliance. |
| SMAJ16A-HF | Smaller SMA (DO-214AC) package; lower PPPM (400 W); RθJA = 140 °C/W; same VWM/VBR. | Insufficient surge margin for IEC 61000-4-5 Level 4; limited to consumer-grade 2 kV surge environments. | Choose only for space-constrained non-automotive designs where 400 W peak power suffices. |
Compared with SMBJ16AHM3_B/I, the HE3 variant trades halogen-free status for slightly lower unit cost, while the SMAJ16A-HF sacrifices 33% peak power and thermal performance for footprint reduction - making SMBJ16AHM3_B/I the sole option meeting AEC-Q101 + 600 W + halogen-free requirements simultaneously.
Availability
SMBJ16AHM3_B/I is available at Aetrix Electronics and suitable for automotive ECUs, industrial PLC I/O modules, telecom power supplies, and DC motor drive systems requiring stable component supply with full material compliance documentation.
Supply support for SMBJ16AHM3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and AEC-Q qualification.
The SMBJ series targets high-energy transient suppression in harsh environments - engineered specifically for automotive, industrial, and telecom infrastructure where failure modes must be mitigated to ISO 26262 ASIL-B levels.
FAQ
What is the maximum clamping voltage of SMBJ16AHM3_B/I under a 10/1000 µs surge?
The SMBJ16AHM3_B/I exhibits a maximum clamping voltage (VC) of 26.0 V when subjected to its rated peak pulse current of 23.1 A using the standardized 10/1000 µs waveform. This value is measured per Figure 1 in Vishay document 88392 and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring compatibility with 3.3 V or 5 V logic interfaces downstream of the SMBJ16AHM3_B/I.
Is SMBJ16AHM3_B/I qualified for automotive applications?
Yes, SMBJ16AHM3_B/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HM3" and footnote (1) in the Thermal Characteristics table (page 3). This qualification validates its robustness for automotive powertrain, chassis, and body electronics, including operation across –55 °C to +150 °C junction temperature and resistance to mechanical shock, vibration, and humidity cycling - essential for long-term reliability in vehicles where SMBJ16AHM3_B/I is deployed.
Does SMBJ16AHM3_B/I have halogen-free construction?
Yes, SMBJ16AHM3_B/I uses halogen-free molding compound and matte tin-plated leads, fully compliant with IEC 61249-2-21 and JEDEC JS709E standards. The "HM3" suffix explicitly denotes halogen-free, RoHS-compliant, commercial-grade construction - verified in the Mechanical Data section (page 1) and Ordering Information table (page 3) of Vishay document 88392 - making SMBJ16AHM3_B/I suitable for environmentally regulated markets including EU automotive supply chains.
What is the thermal resistance junction-to-ambient for SMBJ16AHM3_B/I?
The typical thermal resistance junction-to-ambient (RθJA) for SMBJ16AHM3_B/I is 100 °C/W, measured on a standard 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pad per terminal, as specified in the Thermal Characteristics table (page 3). This value directly impacts PCB layout decisions: to maintain TJ ≤ 150 °C at 5.0 W steady-state dissipation, ambient temperature must remain below 100 °C - confirming SMBJ16AHM3_B/I's suitability for thermally constrained enclosures where SMBJ16AHM3_B/I operates continuously.
How does the breakdown voltage tolerance of SMBJ16AHM3_B/I affect circuit design?
SMBJ16AHM3_B/I has a guaranteed breakdown voltage (VBR) range of 17.8 V to 19.7 V at 1 mA test current, providing a ±5.5% tolerance band. This tight distribution ensures predictable turn-on behavior across production lots, allowing designers to set VWM = 16 V with sufficient margin (≥1.8 V) to avoid false triggering during normal 12 V rail ripple - a key reliability factor in systems where SMBJ16AHM3_B/I guards sensitive microcontroller power domains.
SMBJ16AHM3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 16V
- Voltage - Breakdown (Min):
- 17.8V
- Voltage - Clamping (Max) @ Ipp:
- 26V
- Current - Peak Pulse (10/1000µs):
- 23.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ16AHM3_B/I FAQ
1.How can I place an order for SMBJ16AHM3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ16AHM3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ16AHM3_B/I reliable?
The price and inventory of SMBJ16AHM3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ16AHM3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ16AHM3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ16AHM3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ16AHM3_B/I?
SMBJ16AHM3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ16AHM3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ16AHM3_B/I?
For technical support, including SMBJ16AHM3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ16AHM3_B/I requirements.
6.How does Aetrix verify that SMBJ16AHM3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ16AHM3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ16AHM3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ16AHM3_B/I?
All SMBJ16AHM3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ16AHM3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ16AHM3_B/I part is unused and in its original packaging.
Return procedure for SMBJ16AHM3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ16AHM3_B/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
