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Vishay General Semiconductor - Diodes Division SMBJ170AHE3_A/I
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- Part No.:
- SMBJ170AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ170AHE3_A/I.pdf
- Description:
- TVS DIODE 170VWM 275VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:8,338
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Product details
Overview
SMBJ170AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 170 V stand-off voltage (VWM), 189–209 V breakdown voltage (VBR) at 1 mA, 275 V maximum clamping voltage (VC) at 2.2 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 µs waveform), deployed in industrial power supplies and automotive ECUs.
For engineers reviewing the SMBJ170AHE3_A/I datasheet, SMBJ170AHE3_A/I pinout, SMBJ170AHE3_A/I application, or SMBJ170AHE3_A/I equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and packaging details for reliable circuit protection design and BOM validation.
Technical Context
This TVS diode operates as a unidirectional clamping device with cathode-band polarity marking, leveraging glass-passivated silicon junction technology for fast response (<1 ns) and low incremental surge resistance. Its 10/1000 µs waveform rating reflects standardized lightning/surge immunity testing per ANSI/IEEE C62.35.
The SMBJ170AHE3_A/I is rated for 5.0 W steady-state power dissipation at TA = 50 °C and supports 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine). It meets MSL Level 1 per J-STD-020 and is AEC-Q101 qualified - confirmed by HE3 suffix and ordering code documentation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 170 V - Maximum continuous reverse operating voltage before clamping begins; defines safe working margin below breakdown. |
| VBR (min/max) | 189 V / 209 V at IT = 1 mA - Confirmed breakdown threshold range; ensures predictable turn-on under transients. |
| VC @ IPPM | 275 V at IPPM = 2.2 A - Clamped voltage during 10/1000 µs surge; determines protected circuit's maximum stress level. |
| PPPM | 600 W - Peak pulse power handling capability; validates suitability for IEC 61000-4-5 Level 4 (4 kV) surge events. |
| TJ max. | +150 °C - Maximum junction temperature; enables operation in under-hood automotive or high-ambient industrial environments. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard 0.2" × 0.2" copper pads; informs heatsinking requirements. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD; designated by HE3 suffix. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, RoHS-compliant and halogen-free (per HM3/HE3 designation), MSL Level 1, 260 °C reflow peak.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Anode-side connection in unidirectional configuration | Reverse-biased during normal operation; conducts when transient exceeds VBR to clamp voltage at VC. |
| Anode (non-banded end) | Ground/reference node connection | Provides low-impedance return path during clamping; must be routed with minimal inductance for effective surge suppression. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Supports high-energy surge immunity (e.g., ISO 7637-2 Pulse 5a) without degradation in automotive power nets. |
| AEC-Q101 qualification | Validates long-term reliability under automotive temperature, vibration, and lifetime stress conditions - required for ECU front-end protection. |
| Low clamping ratio (VC/VBR ≈ 1.38) | Minimizes overvoltage overshoot during fast transients, reducing risk of downstream IC latch-up or gate oxide damage. |
| MSL Level 1 moisture sensitivity | Enables standard SMT assembly without baking; eliminates production delays and moisture-related popcorning failures. |
| Glass passivated junction | Ensures stable leakage performance (ID ≤ 1.0 µA at VWM) and long-term parameter stability across temperature and humidity. |
Applications
| Automotive Power Distribution | Industrial PLC Input Protection |
|---|---|
|
Use Scenario: Protecting 12 V/24 V battery-fed control modules against load dump (ISO 7637-2 Pulse 5a) and alternator switching spikes. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and ground, clamping transients within 1 ns to limit voltage to ≤275 V. Use Value: Prevents permanent damage to MCU power pins and CAN transceivers by limiting peak rail voltage during 120 V/350 ms load dump events. |
Use Scenario: Shielding digital input channels of programmable logic controllers from field-wiring induced surges (IEC 61000-4-5). IC Role / Device Role / Timing Role: Standoff-rated TVS (VWM = 170 V) installed across optocoupler input terminals to absorb ±2 kV common-mode surges. Use Value: Maintains signal integrity and prevents false triggering by clamping transients before they reach isolation barrier components. |
| Telecom DC Power Feeds | Motor Drive Gate Driver Protection |
|
Use Scenario: Safeguarding -48 V telecom rectifier outputs and backplane rails from lightning-induced surges on long cable runs. IC Role / Device Role / Timing Role: High-VWM unidirectional TVS connected anode-to-rail, cathode-to-ground to handle negative-going transients on negative supply rails. Use Value: Enables compliance with GR-1089-CORE Level 3 surge immunity while preserving system uptime in central office equipment. |
Use Scenario: Protecting high-side and low-side gate drivers in 3-phase inverters from Miller-induced voltage spikes during IGBT/MOSFET switching. IC Role / Device Role / Timing Role: Localized TVS mounted directly at driver IC supply pins (VDD/VSS) to suppress <100 ns ringing and dv/dt-induced false turn-on. Use Value: Reduces gate oxide stress and prevents shoot-through by clamping supply rail excursions to ≤275 V during fast switching transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ170AHM3_A/I | Halogen-free variant with identical VWM, VBR, VC, and AEC-Q101 qualification; same SMB package and thermal specs. | No functional difference; selected where halogen-free compliance is mandated by OEM environmental policy (e.g., VW 80101). | Drop-in replacement if halogen-free material content is required; verify sourcing availability for volume programs. |
| SMCJ170AHE3_A/I | Same electrical specs but in larger SMC (DO-214AB) package; RθJA = 50 °C/W vs. 100 °C/W; IPPM = 4.4 A (double). | Higher surge current capacity suits higher-energy systems (e.g., heavy-duty vehicle battery management); requires PCB layout change. | Choose when 600 W is insufficient or board space allows larger footprint; not pin-compatible due to different pad layout. |
Compared with SMBJ170AHE3_A/I, the HM3 variant offers identical protection performance with halogen-free construction, while the SMCJ170AHE3_A/I provides double surge current headroom at the cost of larger footprint and revised thermal design - both require explicit validation for mechanical fit and layout compatibility.
Availability
SMBJ170AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronic control units, industrial programmable logic controllers, telecom power distribution systems, and motor drive gate driver circuits requiring stable component supply and AEC-Q101 assurance.
Supply support for SMBJ170AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-reliability transient suppression in harsh environments - targeting automotive, industrial, and telecom applications where consistent clamping performance and long-term stability are critical.
FAQ
What is the maximum clamping voltage of SMBJ170AHE3_A/I at its rated peak pulse current?
The SMBJ170AHE3_A/I has a maximum clamping voltage (VC) of 275 V at its specified peak pulse current (IPPM) of 2.2 A under a 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring downstream ICs remain within absolute maximum ratings.
Is SMBJ170AHE3_A/I qualified for automotive use?
Yes, SMBJ170AHE3_A/I is AEC-Q101 qualified, as confirmed by the "HE3" suffix and Vishay's official ordering information. It undergoes rigorous stress testing including temperature cycling, high-temperature reverse bias, and ESD, making it suitable for engine control units, body electronics, and ADAS power domains where automotive-grade reliability is mandatory.
What does the "A/I" suffix indicate in SMBJ170AHE3_A/I?
The "A/I" suffix in SMBJ170AHE3_A/I denotes packaging configuration: "A" indicates the base part number variant, and "I" specifies 13-inch diameter plastic tape-and-reel delivery with 3200 units per reel. This format supports high-volume automated SMT placement and aligns with standard J-STD-033 moisture-sensitive device handling protocols.
How does SMBJ170AHE3_A/I differ from bidirectional variants like SMBJ170CA?
SMBJ170AHE3_A/I is unidirectional with cathode-band polarity, intended for DC rail protection where polarity is fixed. In contrast, SMBJ170CA is bidirectional - symmetrical clamping in both directions - used in AC-coupled or floating signal lines. Their VBR and VC values differ: SMBJ170CA has lower VBR (≈189–209 V) but same VC (275 V), and no forward conduction path.
What is the thermal resistance and how does it affect PCB layout for SMBJ170AHE3_A/I?
SMBJ170AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain TJ ≤ 150 °C under 5.0 W steady-state dissipation, designers must ensure adequate copper area and avoid thermal bottlenecks - undersized pads or internal layer isolation will cause excessive temperature rise and premature failure.
SMBJ170AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 170V
- Voltage - Breakdown (Min):
- 189V
- Voltage - Clamping (Max) @ Ipp:
- 275V
- Current - Peak Pulse (10/1000µs):
- 2.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ170AHE3_A/I FAQ
1.How can I place an order for SMBJ170AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ170AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ170AHE3_A/I reliable?
The price and inventory of SMBJ170AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ170AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ170AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ170AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ170AHE3_A/I?
SMBJ170AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ170AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ170AHE3_A/I?
For technical support, including SMBJ170AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ170AHE3_A/I requirements.
6.How does Aetrix verify that SMBJ170AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ170AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ170AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ170AHE3_A/I?
All SMBJ170AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ170AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ170AHE3_A/I part is unused and in its original packaging.
Return procedure for SMBJ170AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ170AHE3_A/I Tags
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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