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Vishay General Semiconductor - Diodes Division SMBJ170AHE3_B/I
- Part No.:
- SMBJ170AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ170AHE3_B/I.pdf
- Description:
- 600W,170V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:9,452
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Product details
Overview
SMBJ170AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed to protect sensitive electronics against voltage transients induced by inductive load switching and lightning surges. It features a 170 V stand-off voltage (VWM), 189–209 V breakdown voltage (VBR) at 1 mA, 275 V maximum clamping voltage (VC) at 2.2 A peak pulse current (IPPM), and 600 W peak pulse power capability with a 10/1000 µs waveform.
For engineers reviewing the SMBJ170AHE3_B/I datasheet, SMBJ170AHE3_B/I pinout, SMBJ170AHE3_B/I application, or SMBJ170AHE3_B/I equivalent, this device is selected for robust overvoltage protection in automotive power rails, industrial sensor interfaces, and telecom line-level circuits where AEC-Q101 qualification, low clamping ratio, and fast response time are critical.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, leveraging a glass-passivated silicon junction to deliver sub-nanosecond response time and low incremental surge resistance. Its 170 V stand-off rating ensures compatibility with 150 V nominal DC bus systems while maintaining margin against normal operating transients.
The device is rated for 100 A peak forward surge current (IFSM) at 8.3 ms half-sine, supports continuous power dissipation of 5.0 W at TA = 50 °C, and exhibits a thermal resistance of 100 °C/W (junction-to-ambient) on standard 0.2" × 0.2" copper pads - enabling reliable operation in high-temperature industrial environments up to TJ = 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 170 V - blocks leakage current below system's maximum steady-state voltage without conduction. |
| VBR (Breakdown Voltage) | 189–209 V at IT = 1 mA - defines precise avalanche onset threshold for predictable clamping initiation. |
| VC (Clamping Voltage) | 275 V at IPPM = 2.2 A - limits transient voltage seen by downstream ICs during 10/1000 µs surge events. |
| PPPM (Peak Pulse Power) | 600 W - sustains high-energy transients per IEEE C62.35 without degradation under 0.01% duty cycle. |
| ID (Reverse Leakage) | 1.0 µA max at VWM - ensures minimal standby power loss and signal integrity in high-impedance circuits. |
| TJ max | 150 °C - enables deployment in under-hood automotive and industrial control enclosures without derating. |
| AEC-Q101 Qualified | Yes - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band marking on unidirectional devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during forward conduction | Connected to ground or low-side return path; enables clamping when cathode voltage exceeds VBR. |
| Cathode | Current exit point during forward conduction; marked with band | Connected to protected line (e.g., 150 V rail); conducts surge current to ground when transient exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Handles high-energy transients common in automotive load-dump and industrial motor drive scenarios. |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive applications including engine control units and ADAS power supplies. |
| Low clamping ratio (VC/VBR ≈ 1.37) | Minimizes overvoltage stress on protected MOSFETs and gate drivers during surge events. |
| MSL Level 1 (260 °C reflow compatible) | Supports lead-free SMT assembly without moisture sensitivity concerns or baking requirements. |
| Glass passivated junction | Ensures stable VBR tolerance and long-term reliability under thermal cycling and humidity exposure. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 150 V battery-fed ECUs from ISO 7637-2 pulse 5a (load dump) transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between main rail and chassis ground to shunt surge energy before it reaches DC/DC converters. Use Value: Clamps 170 V rail to ≤275 V within nanoseconds, preventing damage to 300 V-rated input capacitors and PMICs. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA transmitter) from ESD and inductive kickback in factory automation. IC Role / Device Role / Timing Role: Standoff-connected TVS on signal line to ground, activated only during >200 V transients. Use Value: Sub-1 µA leakage at 170 V ensures no impact on loop accuracy; 275 V clamping preserves 24 V signal integrity. |
| Telecom Line-Level Surge Protection | Renewable Energy DC Link Protection |
|
Use Scenario: Shielding PoE-powered equipment front-end from lightning-induced surges on Ethernet pairs. IC Role / Device Role / Timing Role: Unidirectional TVS on DC bias line (e.g., +48 V phantom power) referenced to local ground. Use Value: 170 V VWM accommodates PoE++ (up to 57 V) with headroom; 600 W rating meets IEC 61000-4-5 Level 4. |
Use Scenario: Protecting solar inverter DC link capacitors from grid-switching transients and capacitor bank switching spikes. IC Role / Device Role / Timing Role: Parallel-mounted TVS across 1000 V DC bus to clamp overshoots exceeding 170 V threshold. Use Value: Withstands repeated 2.2 A surges at 275 V clamping, extending capacitor lifetime and avoiding false overvoltage trips. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ170AHM3_B/I | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. | No functional difference; selected when halogen-free compliance is mandated by OEM environmental policy. | Direct material substitution where halogen content restrictions apply; same footprint and thermal performance. |
| SMBJ160AHE3_B/I | Lower VWM (160 V), VBR (178–197 V), and VC (259 V); otherwise identical package, power rating, and qualification. | Better suited for 130–150 V nominal systems requiring tighter clamping margin and lower let-through voltage. | Choose when system operating voltage is ≤160 V and lower clamping voltage is prioritized over headroom. |
Compared with SMBJ170AHE3_B/I, SMBJ170AHM3_B/I offers identical protection performance with halogen-free construction, while SMBJ160AHE3_B/I trades 10 V stand-off margin for reduced clamping voltage - enabling tighter protection windows in lower-voltage DC systems.
Availability
SMBJ170AHE3_B/I is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor interface design, and telecom infrastructure projects requiring stable component supply and AEC-Q101 assurance.
Supply support for SMBJ170AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and automotive-grade validation.
The SMBJ series was engineered for high-reliability transient suppression in harsh environments, targeting automotive, industrial, and telecom applications demanding AEC-Q101 qualification and robust 600 W surge handling.
FAQ
What is the clamping voltage of SMBJ170AHE3_B/I at its rated peak pulse current?
The SMBJ170AHE3_B/I has a maximum clamping voltage (VC) of 275 V at a peak pulse current (IPPM) of 2.2 A, measured using the standardized 10/1000 µs waveform. This value ensures protected circuitry sees no more than 275 V during surge events, making SMBJ170AHE3_B/I suitable for safeguarding 300 V-rated components on 170 V nominal rails.
Is SMBJ170AHE3_B/I qualified for automotive use?
Yes, SMBJ170AHE3_B/I is AEC-Q101 qualified, as confirmed by the "HE3" suffix and documentation in Vishay's datasheet (Doc. #88392, Rev. 09-Jan-2024). This qualification covers stress tests including temperature cycling, high-temperature reverse bias, and ESD, validating SMBJ170AHE3_B/I for under-hood and body-control module applications.
What does the "B/I" suffix indicate in SMBJ170AHE3_B/I?
The "B/I" suffix in SMBJ170AHE3_B/I denotes packaging configuration: "B" indicates tape-and-reel packaging per Vishay's internal revision coding, and "I" specifies a 13-inch diameter reel containing 3200 units. This matches the ordering information table on page 3 of the datasheet and confirms full traceability and SMT compatibility.
How does SMBJ170AHE3_B/I compare to bidirectional TVS diodes like SMBJ170CA?
SMBJ170AHE3_B/I is unidirectional and intended for DC line protection with polarity-sensitive placement (cathode toward protected line), whereas SMBJ170CA is bidirectional and used in AC or floating signal paths. SMBJ170AHE3_B/I offers lower leakage (<1.0 µA at 170 V) and higher IFSM (100 A), making it preferable for DC power rail protection where polarity is fixed and surge energy is asymmetric.
What is the thermal resistance of SMBJ170AHE3_B/I, and how does it affect PCB layout?
SMBJ170AHE3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain TJ ≤ 150 °C at full 5.0 W power dissipation, designers must provide adequate copper area and avoid excessive ambient temperatures - confirming SMBJ170AHE3_B/I's suitability for compact industrial PCBs with controlled thermal zones.
SMBJ170AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 170V
- Voltage - Breakdown (Min):
- 189V
- Voltage - Clamping (Max) @ Ipp:
- 275V
- Current - Peak Pulse (10/1000µs):
- 2.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ170AHE3_B/I FAQ
1.How can I place an order for SMBJ170AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ170AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ170AHE3_B/I reliable?
The price and inventory of SMBJ170AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ170AHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ170AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ170AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ170AHE3_B/I?
SMBJ170AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ170AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ170AHE3_B/I?
For technical support, including SMBJ170AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ170AHE3_B/I requirements.
6.How does Aetrix verify that SMBJ170AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ170AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ170AHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ170AHE3_B/I?
All SMBJ170AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ170AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ170AHE3_B/I part is unused and in its original packaging.
Return procedure for SMBJ170AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ170AHE3_B/I Tags
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