My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ170CHE3/5B
;;2.jpg)
- Part No.:
- SMBJ170CHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ170CHE3/5B.pdf
- Description:
- TVS DIODE 170VWM 304VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:2,544
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ170CHE3/5B from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 170 V stand-off voltage (VWM), 189–209 V breakdown voltage (VBR) at 1 mA, 275 V maximum clamping voltage (VC) at 2.2 A peak pulse current (IPPM), and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in industrial motor drives, telecom power supplies, and automotive ECUs.
For engineers reviewing the SMBJ170CHE3/5B datasheet, SMBJ170CHE3/5B pinout, SMBJ170CHE3/5B application, or SMBJ170CHE3/5B equivalent, key selection criteria include clamping performance under 2.2 A surge, AEC-Q101 qualification status, RoHS-compliant matte tin terminations, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This unidirectional TVS operates as a voltage-clamped shunt protector: when reverse voltage exceeds VBR (189–209 V), it avalanches to limit transient energy across protected circuitry. Its low incremental surge resistance and fast response time (<1 ns) ensure minimal overshoot during ESD or lightning-induced transients.
The device is rated for 100 A non-repetitive forward surge current (IFSM), supports continuous power dissipation of 5.0 W at 50 °C on infinite heatsink, and maintains stable operation across -55 °C to +150 °C junction temperature range - validated per J-STD-020 MSL level 1 with 260 °C reflow peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 170 V - maximum continuous reverse operating voltage before clamping initiates; sets safe DC rail margin for 24/48 V systems with headroom. |
| VBR (min/max) | 189 V / 209 V at 1 mA - tight breakdown tolerance ensures predictable turn-on and avoids premature conduction during normal operation. |
| VC @ IPPM | 275 V at 2.2 A - clamping voltage defines worst-case voltage seen by downstream ICs during standardized 10/1000 µs surge event. |
| PPPM | 600 W - peak pulse power handling capability with 10/1000 µs waveform enables protection against IEC 61000-4-5 Level 3 surges. |
| TJ max. | +150 °C - high junction temperature rating allows reliable operation in under-hood automotive or enclosed industrial enclosures. |
| RθJA | 100 °C/W - thermal resistance informs PCB pad design; requires ≥5.0 mm × 5.0 mm copper area per terminal for rated power derating. |
| AEC-Q101 | Qualified - certified for automotive electronics per stress test requirements including HTGB, HTRB, and TCT, supporting ECU and ADAS applications. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; polarity indicated by cathode band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / transient return path | Connected to ground or low-impedance return plane; forms shunt path during avalanche conduction. |
| Cathode | Protected line connection / high-side terminal | Connected to input rail or signal line; voltage referenced to anode during clamping event. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables compliance with IEC 61000-4-5 surge immunity up to 1 kV open-circuit / 0.5 kV source impedance. |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive-grade reliability including temperature cycling, high-temp reverse bias, and humidity testing. |
| Low profile SMB (DO-214AA) package | 0.220" × 0.155" footprint supports high-density PCB layouts and automated pick-and-place assembly. |
| Glass passivated chip junction | Improves long-term stability and moisture resistance versus epoxy-passivated alternatives in humid environments. |
| MSL level 1, 260 °C peak reflow | Compatible with standard lead-free reflow profiles without preconditioning or special handling. |
Applications
| Industrial Motor Drives | Telecom Power Supplies |
|---|---|
|
Use Scenario: Protection of 200 V DC bus against switching transients from IGBT gate drivers and inductive load commutation. IC Role / Device Role / Timing Role: Shunt clamping element placed across DC link capacitor to clamp voltage spikes exceeding 170 V. Use Value: Limits transient overshoot to ≤275 V, preventing damage to 300 V-rated electrolytic capacitors and gate drivers. |
Use Scenario: Input-stage surge suppression on 48 V telecom rectifier outputs exposed to lightning-induced surges. IC Role / Device Role / Timing Role: Primary overvoltage clamp on secondary-side DC distribution rail prior to POL converters. Use Value: Absorbs 600 W surge energy within 1000 µs, maintaining output regulation and avoiding brownout resets in base station controllers. |
| Automotive Engine Control Units | Industrial Sensor Signal Conditioning |
|
Use Scenario: Protection of microcontroller I/O and CAN transceiver power pins in under-hood ECU modules subject to load dump. IC Role / Device Role / Timing Role: Unidirectional TVS on 12 V supply rail upstream of LDO regulators. Use Value: Clamps 12 V system transients to 275 V during ISO 7637-2 Pulse 5a (load dump), preserving regulator input rating. |
Use Scenario: Transient suppression on analog sensor inputs (e.g., pressure, temperature) in factory automation PLC modules. IC Role / Device Role / Timing Role: Low-capacitance shunt protector on 24 V sensor excitation lines and differential signal pairs. Use Value: Prevents latch-up or permanent damage to precision op-amps and ADC front-ends during EFT bursts or cable discharge events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ170AHE3/5B | Same electrical specs and AEC-Q101 qualification; differs only in packaging code (E3 vs HE3 denotes same RoHS/AEC-Q101 variant). | No functional difference; identical use in automotive and industrial designs requiring AEC-Q101 validation. | Select SMBJ170CHE3/5B when ordering from Vishay's official HE3-qualified production lot traceability. |
| SMCJ170AHE3/5B | Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package; higher 1500 W PPPM rating and lower RθJA (50 °C/W). | Better suited for higher-energy surges or thermally constrained designs where PCB space permits larger footprint. | Choose SMCJ170AHE3/5B only if system-level surge testing exceeds 600 W or thermal budget requires <50 °C/W junction-to-ambient resistance. |
Compared with SMBJ170AHE3/5B, SMBJ170CHE3/5B offers identical protection performance in a smaller SMB package, while SMCJ170AHE3/5B trades size for higher surge capacity and improved thermal dissipation - making SMBJ170CHE3/5B optimal for space-constrained AEC-Q101 designs needing exact 600 W compliance.
Availability
SMBJ170CHE3/5B is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive engine control units requiring stable component supply with full AEC-Q101 traceability and RoHS compliance.
Supply support for SMBJ170CHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The SMBJ series is part of Vishay's TRANSZORB® TVS portfolio, engineered specifically for high-energy transient suppression in automotive, industrial, and telecom infrastructure where precise clamping and AEC-Q101 validation are mandatory.
FAQ
What is the clamping voltage of SMBJ170CHE3/5B at its rated peak pulse current?
The SMBJ170CHE3/5B has a maximum clamping voltage (VC) of 275 V at 2.2 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is measured with the device mounted on 5.0 mm × 5.0 mm copper pads per datasheet conditions. The SMBJ170CHE3/5B maintains this clamping performance across its full operating temperature range.
Is SMBJ170CHE3/5B qualified for automotive applications?
Yes, SMBJ170CHE3/5B is AEC-Q101 qualified, as confirmed by the "HE3" suffix in its part number and documented in Vishay's specification sheet (Document Number: 88392). It undergoes stress testing including high-temperature reverse bias, temperature cycling, and humidity testing per AEC-Q101 requirements. The SMBJ170CHE3/5B is approved for use in engine control units, body control modules, and ADAS power domains.
What is the difference between SMBJ170CHE3/5B and SMBJ170AHE3/5B?
SMBJ170CHE3/5B and SMBJ170AHE3/5B share identical electrical specifications, AEC-Q101 qualification, and RoHS compliance - the "C" and "A" suffixes reflect internal Vishay manufacturing batch or revision coding, not functional differences. Both parts meet the same VWM (170 V), VBR (189–209 V), VC (275 V), and PPPM (600 W) ratings. The SMBJ170CHE3/5B is a valid, fully specified variant of the SMBJ170AHE3/5B family.
What PCB layout guidance applies to SMBJ170CHE3/5B for optimal thermal performance?
For rated 5.0 W power dissipation, SMBJ170CHE3/5B requires minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads on both terminals, per Vishay's thermal characterization. Trace width should be ≥1.0 mm to minimize thermal resistance; internal copper layers connected via multiple vias improve heat spreading. The SMBJ170CHE3/5B's RθJA of 100 °C/W assumes this layout - reducing pad area increases junction temperature and de-rates surge capability.
Does SMBJ170CHE3/5B support lead-free reflow assembly?
Yes, SMBJ170CHE3/5B meets J-STD-020 MSL level 1 and is rated for lead-free reflow with a maximum peak temperature of 260 °C. Its matte tin-plated leads comply with J-STD-002 and JESD 22-B102 solderability standards, and the molding compound is UL 94 V-0 rated. No pre-baking or special handling is required prior to reflow, making SMBJ170CHE3/5B compatible with standard SMT production lines.
SMBJ170CHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 170V
- Voltage - Breakdown (Min):
- 189V
- Voltage - Clamping (Max) @ Ipp:
- 304V
- Current - Peak Pulse (10/1000µs):
- 2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ170CHE3/5B FAQ
1.How can I place an order for SMBJ170CHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ170CHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ170CHE3/5B reliable?
The price and inventory of SMBJ170CHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ170CHE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ170CHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ170CHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ170CHE3/5B?
SMBJ170CHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ170CHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ170CHE3/5B?
For technical support, including SMBJ170CHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ170CHE3/5B requirements.
6.How does Aetrix verify that SMBJ170CHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ170CHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ170CHE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ170CHE3/5B?
All SMBJ170CHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ170CHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ170CHE3/5B part is unused and in its original packaging.
Return procedure for SMBJ170CHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ170CHE3/5B Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
