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Vishay General Semiconductor - Diodes Division SMBJ170D-M3/I
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- Part No.:
- SMBJ170D-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ170D-M3/I.pdf
- Description:
- TVS DIODE 170VWM 270VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:5,635
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Product details
Overview
SMBJ170D-M3/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 170 V stand-off voltage (VWM), 192–206 V breakdown voltage (VBR) at 1 mA, 600 W peak pulse power (10/1000 μs), 2.23 A peak pulse current (IPPM), and clamps transients to ≤270 V. It is used in industrial power supplies and telecom interface circuits requiring reliable surge immunity.
For engineers reviewing the SMBJ170D-M3/I datasheet, SMBJ170D-M3/I pinout, SMBJ170D-M3/I application, or SMBJ170D-M3/I equivalent, this page delivers verified electrical parameters, thermal derating behavior, clamping performance under surge conditions, M3-grade halogen-free RoHS compliance, and bidirectional alternatives for design flexibility.
Technical Context
This TVS diode operates as a unidirectional clamping device with cathode-banded polarity, leveraging avalanche breakdown to limit transient voltages before sensitive downstream components are stressed. Its 125 °C/W junction-to-ambient thermal resistance (RθJA) and 20 °C/W junction-to-mount (RθJM) define its thermal management requirements on PCBs with minimum recommended pad layout or copper heatsinking.
The SMBJ170D-M3/I complies with ANSI/IEEE C62.35 for surge testing and meets UL 497B recognition (QVGQ2, E136766). It is rated for -55 °C to +150 °C operating junction temperature, supports 0.01 % duty cycle repetitive surges, and exhibits <0.5 μA reverse leakage at VWM - critical for low-power standby circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 170 V - maximum continuous reverse voltage before significant conduction begins; defines safe operating margin below clamping threshold. |
| VBR (Breakdown Voltage) | 192–206 V at 1 mA - precise avalanche onset range enabling tight tolerance design; ±3.5 % tolerance ensures predictable triggering. |
| VC (Clamping Voltage) | ≤270 V at IPPM - maximum voltage seen by protected circuit during 600 W transient; limits stress on 300 V-rated MOSFETs or ICs. |
| IPPM (Peak Pulse Current) | 2.23 A (10/1000 μs) - surge current handling capacity; determines survivability against IEC 61000-4-5 Level 4 (4 kV) events on 2 Ω source impedance. |
| PPPM (Peak Pulse Power) | 600 W - standardized energy absorption capability; enables protection of 24–48 V industrial bus lines against lightning-induced surges. |
| ID (Reverse Leakage) | ≤0.5 μA at VWM - negligible standby power loss; preserves battery life in always-on sensor nodes or remote monitoring systems. |
| TJ max | +150 °C - maximum junction temperature; allows operation in sealed enclosures or high-ambient environments without forced cooling. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, M3-grade matte tin-plated leads meeting JESD 201 Class 2 whisker resistance. Cathode indicated by band at one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or low-voltage rail; forms current path during reverse-biased clamping event. |
| Cathode (banded end) | High-side transient input terminal | Connected to protected line (e.g., 170 V DC bus); avalanche conduction initiates here when V > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables precise coordination with system overvoltage thresholds without guard-banding; reduces risk of nuisance tripping. |
| 600 W peak pulse power (10/1000 μs) | Supports IEC 61000-4-5 surge immunity up to 4 kV on 2 Ω source impedance in industrial control applications. |
| MSL Level 1 (260 °C peak reflow) | Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns or baking requirements. |
| UL 497B recognized (QVGQ2, E136766) | Validates suitability for telecom and industrial equipment safety certification without additional component-level testing. |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (<1 ns rise time), improving protection fidelity for high-speed interfaces. |
Applications
| Industrial Power Supply Protection | Telecom DC Feeder Line Protection |
|---|---|
Use Scenario: Protecting 170 V DC output stage of industrial SMPS against load dump and inductive switching transients. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed across output capacitor bank to shunt surge energy to ground. Use Value: Limits transient voltage to ≤270 V, preventing overvoltage failure of 300 V-rated output rectifiers and bulk capacitors. |
Use Scenario: Safeguarding central office DC feeder lines (−48 V to +170 V) from lightning-induced surges entering via outdoor plant. IC Role / Device Role / Timing Role: Standoff-clamp TVS connected between feed line and earth ground to divert common-mode surges. Use Value: Withstands 600 W pulses while maintaining <0.5 μA leakage, ensuring minimal impact on line supervision circuitry. |
| Motor Drive Gate Driver Protection | High-Voltage Sensor Interface Protection |
Use Scenario: Shielding isolated gate drivers in 150–200 V motor inverters from Miller-induced voltage spikes during IGBT switching. IC Role / Device Role / Timing Role: Fast-response TVS mounted directly at driver output pins to clamp dv/dt-induced transients. Use Value: Sub-1 ns response time and low clamping voltage (≤270 V) prevent false turn-on or gate oxide damage in SiC/MOSFET drivers. |
Use Scenario: Protecting precision analog front-ends of HV battery monitors (e.g., 170 V EV pack sensing) from ESD and cable discharge events. IC Role / Device Role / Timing Role: High-impedance standoff TVS placed before ADC input to absorb transients without loading signal path. Use Value: 170 V VWM matches battery stack operating range; <0.5 μA leakage avoids measurement offset in µV-level sensing circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ170CD-M3/I | Bidirectional variant; identical VWM (170 V), VBR (192–206 V), PPPM (600 W), but symmetrical clamping in both polarities. | Required where AC-coupled or dual-polarity signals (e.g., RS-485, CAN FD bus) need protection without polarity assumptions. | Select SMBJ170CD-M3/I only if bidirectional clamping is mandated; SMBJ170D-M3/I offers lower leakage and simpler grounding in DC-only systems. |
| SMCJ170A-M3/86A | Higher-power SMC package (1500 W PPPM); same VWM/VBR but larger footprint (DO-214AB), higher RθJA (60 °C/W), and 3.5 A IPPM. | Suitable for higher-energy threats (e.g., IEC 61000-4-5 Level 5) where board space permits and thermal mass supports dissipation. | Choose SMCJ170A-M3/86A when 600 W is insufficient; SMBJ170D-M3/I remains optimal for space-constrained 600 W-class protection with SMB footprint. |
Compared with SMBJ170CD-M3/I, the SMBJ170D-M3/I provides superior reverse leakage control and simplified grounding for DC rails; versus SMCJ170A-M3/86A, it trades peak power for compactness and compatibility with dense industrial PCB layouts.
Availability
SMBJ170D-M3/I is available at Aetrix Electronics and suitable for industrial power supplies, telecom DC feeder protection, motor drive gate driver safeguarding, and high-voltage sensor interface circuits requiring stable component supply and long-term lifecycle support.
Supply support for SMBJ170D-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for demanding industrial, automotive, and computing applications.
The SMBJ series is engineered specifically for surface-mount transient voltage suppression in space-constrained, high-surge environments - emphasizing tight VBR tolerance, low leakage, and UL-recognized reliability for mission-critical infrastructure.
FAQ
What is the clamping voltage of SMBJ170D-M3/I at its rated peak pulse current?
The SMBJ170D-M3/I clamps to a maximum of 270 V when subjected to its specified peak pulse current (IPPM) of 2.23 A under the standard 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 and represents the upper voltage limit imposed on the protected circuit during surge events - critical for ensuring downstream 300 V-rated components remain within safe operating limits.
Is SMBJ170D-M3/I suitable for bidirectional signal line protection?
No, SMBJ170D-M3/I is a unidirectional TVS diode, identified by its cathode band and specified for DC rail protection where polarity is fixed. For bidirectional applications such as RS-485, CAN, or AC-coupled interfaces, the SMBJ170CD-M3/I variant must be used instead, as it provides symmetrical clamping in both directions without polarity dependency.
What does the "M3" suffix indicate in SMBJ170D-M3/I?
"M3" denotes Vishay's industrial-grade, halogen-free, RoHS-compliant construction with matte tin-plated leads that meet JESD 201 Class 2 whisker resistance requirements. It also signifies compliance with JEDEC MSL Level 1 handling (peak reflow ≤260 °C), making SMBJ170D-M3/I suitable for lead-free SMT assembly without moisture sensitivity concerns.
How does SMBJ170D-M3/I perform thermally on a standard PCB layout?
When mounted on the minimum recommended pad layout, SMBJ170D-M3/I exhibits a junction-to-ambient thermal resistance (RθJA) of 125 °C/W. At 1.0 W steady-state power dissipation (TA = 25 °C), this results in a ~125 °C junction temperature rise - well within its 150 °C maximum rating. Derating curves in the datasheet confirm safe operation up to 75 °C ambient at full DC power.
Does SMBJ170D-M3/I have UL recognition for safety-critical applications?
Yes, SMBJ170D-M3/I is Underwriters Laboratories (UL) recognized under file E136766 for both unidirectional and bidirectional variants, classified per UL 497B for protectors (QVGQ2). This recognition validates its use in certified telecom, industrial, and building automation equipment without requiring additional component-level safety testing.
SMBJ170D-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 170V
- Voltage - Breakdown (Min):
- 192V
- Voltage - Clamping (Max) @ Ipp:
- 270V
- Current - Peak Pulse (10/1000µs):
- 2.23A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ170D-M3/I FAQ
1.How can I place an order for SMBJ170D-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ170D-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ170D-M3/I reliable?
The price and inventory of SMBJ170D-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ170D-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ170D-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ170D-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ170D-M3/I?
SMBJ170D-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ170D-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ170D-M3/I?
For technical support, including SMBJ170D-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ170D-M3/I requirements.
6.How does Aetrix verify that SMBJ170D-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ170D-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ170D-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ170D-M3/I?
All SMBJ170D-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ170D-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ170D-M3/I part is unused and in its original packaging.
Return procedure for SMBJ170D-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ170D-M3/I Tags
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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