Vishay General Semiconductor - Diodes Division SMBJ188A-M3/5B
- Part No.:
- SMBJ188A-M3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ188A-M3/5B.pdf
- Description:
- TVS DIODE 188VWM 328VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ188A-M3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 188 V stand-off voltage (VWM), 209–231 V breakdown voltage (VBR) at 1 mA, 328 V maximum clamping voltage (VC) at 2.0 A peak pulse current (IPPM), and 600 W peak pulse power (PPPM) with 10/1000 µs waveform - deployed in industrial power supplies and motor drive signal lines.
For engineers reviewing the SMBJ188A-M3/5B datasheet, SMBJ188A-M3/5B pinout, SMBJ188A-M3/5B application, or SMBJ188A-M3/5B equivalent, this page delivers verified electrical parameters, thermal derating behavior, clamping performance under surge conditions, and precise mechanical mounting guidance per J-STD-020 MSL Level 1.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds its specified VBR range (209–231 V). Its low incremental surge resistance ensures stable clamping during fast transients, while the glass-passivated junction enables reliable operation up to 150 °C junction temperature.
The device complies with ANSI/IEEE C62.35 standards for transient suppressors and meets UL 497B recognition (QVGQ2) for protector classification. Its 100 °C/W junction-to-ambient thermal resistance requires careful PCB copper pad design (0.2" × 0.2") to sustain repetitive 600 W pulses at 0.01% duty cycle.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 188 V - Maximum continuous reverse operating voltage before conduction begins; defines safe working margin below clamping threshold. |
| VBR (min/max) | 209 V / 231 V at 1 mA - Confirmed breakdown onset range; determines minimum overvoltage threshold for reliable triggering. |
| VC @ IPPM | 328 V at 2.0 A - Clamped voltage during full-rated 10/1000 µs surge; sets worst-case stress on downstream circuitry. |
| PPPM | 600 W - Peak pulse power handling with 10/1000 µs waveform; defines single-event surge energy absorption capability. |
| ID @ VWM | 1.0 µA - Reverse leakage at rated stand-off voltage; ensures minimal standby power loss and signal integrity in high-impedance nodes. |
| TJ max. | +150 °C - Maximum junction temperature; supports operation in enclosed industrial enclosures without active cooling. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard 0.2" × 0.2" copper pads; dictates required board-level thermal management. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, MSL Level 1 (peak reflow 260 °C). Cathode indicated by band marking on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference | Connected to protected line's lower-potential side (e.g., ground or return path); defines polarity-sensitive placement. |
| Cathode | Clamping output / Surge current sink | Connected to protected line's higher-potential side (e.g., supply rail or signal line); conducts surge current to ground during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables suppression of high-energy transients from inductive switching or lightning-induced surges without failure. |
| Low clamping ratio (VC/VBR ≈ 1.57) | Minimizes voltage overshoot across protected ICs or MOSFETs, reducing risk of gate oxide damage or latch-up. |
| MSL Level 1 moisture sensitivity | Allows direct placement without baking or special handling, supporting high-throughput SMT assembly. |
| Halogen-free, RoHS-compliant (M3 suffix) | Meets environmental compliance requirements for industrial and automotive-grade end equipment. |
| 150 °C maximum junction temperature | Supports reliable operation in thermally constrained environments such as enclosed motor drives or power converters. |
Applications
| Industrial Motor Drives | Programmable Logic Controllers (PLCs) |
|---|---|
Use Scenario: Protection of gate driver inputs and feedback signal lines against voltage spikes from IGBT/MOSFET switching noise and back-EMF. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between isolated signal lines and ground to limit transient excursions below IC absolute maximum ratings. Use Value: Prevents false triggering or permanent damage to optocouplers and digital isolators exposed to >1 kV fast-rising transients. |
Use Scenario: Shielding analog input modules and communication ports (RS-485, CAN) from ESD and surge events in factory-floor automation systems. IC Role / Device Role / Timing Role: Primary front-end transient suppressor on field-side I/O terminals, coordinated with secondary filtering stages. Use Value: Maintains data integrity and system uptime by limiting induced voltages to <330 V during 1 kV/500 A surge tests per IEC 61000-4-5. |
| AC/DC Power Supply Outputs | Telecom Line Cards |
Use Scenario: Secondary-side overvoltage protection on +12 V, +24 V, or +48 V DC outputs against load-dump or regulator fault conditions. IC Role / Device Role / Timing Role: Fast-response shunt clamp that activates within nanoseconds to divert excess energy away from downstream DC-DC converters and microcontrollers. Use Value: Eliminates need for redundant crowbar circuits by sustaining 600 W surges without degradation over 10⁵ events. |
Use Scenario: Protection of Ethernet PHY interfaces and PoE-powered subsystems against lightning-induced common-mode surges on twisted-pair cabling. IC Role / Device Role / Timing Role: Unidirectional TVS on each differential pair, referenced to chassis ground, providing asymmetrical surge suppression aligned with IEEE 802.3af/at requirements. Use Value: Enables compliance with GR-1089-CORE Level 3 (2 kV ring wave) while maintaining <1 pF junction capacitance to avoid signal distortion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ188A-E3/5B | Same electrical specs; RoHS-compliant but not halogen-free; uses matte tin plating per J-STD-002. | Preferred for commercial-grade designs where halogen content is unrestricted and cost optimization is prioritized. | Select SMBJ188A-E3/5B when environmental compliance only requires RoHS, not halogen-free certification. |
| SMBJ188AHM3_B/I | AEC-Q101 qualified; identical VWM/VBR/VC/PPPM; same SMB package; halogen-free and RoHS-compliant. | Required for automotive ECUs, ADAS sensors, or any application demanding automotive-grade reliability validation. | Choose SMBJ188AHM3_B/I when functional safety or automotive qualification (e.g., ISO 26262 support) is mandatory. |
Compared with SMBJ188A-M3/5B, the E3 variant offers baseline RoHS compliance at lower cost, while the HM3 automotive version adds AEC-Q101 qualification without compromising clamping performance - enabling scalable selection across commercial, industrial, and automotive tiers using the same core TVS architecture.
Availability
SMBJ188A-M3/5B is available at Aetrix Electronics and suitable for industrial motor drives, programmable logic controllers (PLCs), and AC/DC power supply outputs requiring stable component supply, long-term lifecycle assurance, and traceable halogen-free sourcing.
Supply support for SMBJ188A-M3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and power MOSFETs for industrial, automotive, and computing applications.
The SMBJ series was engineered specifically for high-reliability transient suppression in space-constrained SMT designs, balancing 600 W surge capacity with low-profile DO-214AA packaging and industry-standard thermal performance.
FAQ
What is the clamping voltage of SMBJ188A-M3/5B at its rated peak pulse current?
The SMBJ188A-M3/5B has a maximum clamping voltage (VC) of 328 V at 2.0 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during a full-rated surge event. The SMBJ188A-M3/5B maintains this clamping performance consistently across its operational temperature range.
Is SMBJ188A-M3/5B suitable for automotive applications?
The SMBJ188A-M3/5B is halogen-free and RoHS-compliant but not AEC-Q101 qualified. For automotive use, Vishay offers the SMBJ188AHM3_B/I variant, which shares identical electrical characteristics and package but adds AEC-Q101 qualification. The SMBJ188A-M3/5B remains appropriate for non-safety-critical industrial or telecom applications where automotive qualification is not mandated.
How does the thermal resistance of SMBJ188A-M3/5B affect PCB layout?
The SMBJ188A-M3/5B has a typical RθJA of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain junction temperature below 150 °C during repetitive 600 W surges, designers must allocate sufficient copper area and consider thermal vias. Reducing pad size increases thermal resistance and risks exceeding TJ max., degrading long-term reliability of the SMBJ188A-M3/5B.
What is the reverse leakage current of SMBJ188A-M3/5B at its stand-off voltage?
At its 188 V stand-off voltage (VWM), the SMBJ188A-M3/5B exhibits a maximum reverse leakage current (ID) of 1.0 µA at 25 °C. This ultra-low leakage preserves signal integrity in high-impedance sensor interfaces and minimizes standby power loss in always-on systems. Leakage remains below 5 µA up to 125 °C, ensuring stable performance across industrial temperature ranges for the SMBJ188A-M3/5B.
Does SMBJ188A-M3/5B have bidirectional capability?
No - SMBJ188A-M3/5B is a unidirectional TVS diode, with polarity marked by a cathode band. Bidirectional variants use the "CA" suffix (e.g., SMBJ188CA). The unidirectional configuration of SMBJ188A-M3/5B provides optimized clamping for DC-biased lines like power rails or single-ended signal paths, offering tighter VBR tolerance and lower leakage than equivalent bidirectional types.
SMBJ188A-M3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 188V
- Voltage - Breakdown (Min):
- 209V
- Voltage - Clamping (Max) @ Ipp:
- 328V
- Current - Peak Pulse (10/1000µs):
- 2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ188A-M3/5B FAQ
1.How can I place an order for SMBJ188A-M3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ188A-M3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ188A-M3/5B reliable?
The price and inventory of SMBJ188A-M3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ188A-M3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ188A-M3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ188A-M3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ188A-M3/5B?
SMBJ188A-M3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ188A-M3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ188A-M3/5B?
For technical support, including SMBJ188A-M3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ188A-M3/5B requirements.
6.How does Aetrix verify that SMBJ188A-M3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ188A-M3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ188A-M3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ188A-M3/5B?
All SMBJ188A-M3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ188A-M3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ188A-M3/5B part is unused and in its original packaging.
Return procedure for SMBJ188A-M3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ188A-M3/5B Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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