Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ24AHE3_B/I

Part No.:
SMBJ24AHE3_B/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ24AHE3_B/I.pdf
Description:
600W,24V 5%,UNIDIR,SMB TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,611

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ24AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features a 24 V stand-off voltage (VWM), 26.7–29.5 V breakdown voltage (VBR) at 1 mA, 38.9 V maximum clamping voltage (VC) at 15.4 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive sensor interfaces, industrial I/O protection, and DC power rail conditioning.

For engineers reviewing the SMBJ24AHE3_B/I datasheet, SMBJ24AHE3_B/I pinout, SMBJ24AHE3_B/I application, or SMBJ24AHE3_B/I equivalent, this AEC-Q101 qualified TVS offers verified surge immunity for 12 V/24 V automotive subsystems, robust reverse leakage (<1.0 µA at VWM), low thermal resistance (RθJL = 20 °C/W), and RoHS-compliant matte tin-plated leads suitable for automated SMT assembly.

Technical Context

This unidirectional TVS operates as a voltage-clamped shunt protector: under normal bias it presents high impedance (<1.0 µA leakage at 24 V), but triggers into low-impedance conduction when transient voltage exceeds its 26.7 V minimum breakdown threshold. Its junction structure uses glass-passivated silicon to ensure stable VBR tolerance (±5%) and fast response time (<1.0 ns).

Thermally, it sustains 150 °C maximum junction temperature with 100 °C/W junction-to-ambient resistance on standard 0.2" × 0.2" copper pads, and delivers 100 A non-repetitive forward surge capability (8.3 ms half-sine) - enabling reliable protection of MOSFET gates and microcontroller I/O against load dump and inductive switching events.

Key Specifications

Parameter Value and Actual Design Meaning
VWM (Stand-off Voltage) 24 V - Maximum continuous reverse operating voltage before significant leakage begins; sets safe margin below system nominal voltage.
VBR (Breakdown Voltage) 26.7–29.5 V at 1 mA - Confirmed minimum/maximum clamping initiation range; ensures predictable turn-on across temperature and lot variation.
VC (Clamping Voltage) 38.9 V at 15.4 A (10/1000 µs) - Peak voltage seen by protected circuit during worst-case surge; defines actual stress on downstream components.
PPPM (Peak Pulse Power) 600 W - Sustained energy absorption capability under standardized surge waveform; validates suitability for ISO 7637-2 Pulse 1/2a/5a compliance testing.
IPPM (Peak Pulse Current) 15.4 A - Maximum transient current the device safely diverts without degradation; directly tied to PCB trace width and fuse coordination.
TJmax 150 °C - Maximum allowable junction temperature; enables operation in under-hood automotive environments with minimal derating.
RθJL 20 °C/W - Low junction-to-lead thermal resistance; supports efficient heat transfer to PCB copper, critical for repetitive surge handling.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with cathode band marking. Matte tin-plated leads meet J-STD-002 solderability and JESD 22-B102 whisker resistance Class 2.

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry / Surge return path Connected to ground or lower-potential rail; completes clamping loop during transient events.
Cathode Reverse-biased terminal / Protected line connection Connected to the line being protected (e.g., 24 V supply or CAN_H); blocks DC but conducts surges to anode.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance - required for engine control, body electronics, and ADAS modules.
600 W peak pulse power (10/1000 µs) Meets ISO 7637-2 Level III/IV and IEC 61000-4-5 Line-to-Line surge requirements without external series impedance.
Low clamping ratio (VC/VBR ≈ 1.4) Minimizes overvoltage stress on protected ICs - e.g., keeps 3.3 V MCU I/O below 40 V during 15 A transients.
MSL Level 1 (260 °C peak reflow) Enables single-pass lead-free reflow without moisture sensitivity concerns - eliminates bake requirements in high-volume SMT lines.
Glass-passivated junction Ensures stable leakage and breakdown parameters over 10+ years in humid industrial environments (85 °C/85% RH).

Applications

Automotive Body Control Module (BCM) Industrial PLC Digital Input Card

Use Scenario: Protecting 24 V sensor supply lines (e.g., Hall effect, pressure sensors) from load dump and alternator ripple.

IC Role / Device Role / Timing Role: Unidirectional shunt clamp placed between 24 V rail and chassis ground.

Use Value: Limits transient voltage to ≤38.9 V, preventing latch-up or gate oxide damage in connected ASICs and microcontrollers.

Use Scenario: Safeguarding 24 V DC digital input channels against field-wiring induced surges and relay contact bounce.

IC Role / Device Role / Timing Role: Primary front-end surge absorber ahead of optocoupler or Schmitt trigger input stage.

Use Value: Absorbs up to 600 W for 1 ms without failure, eliminating need for additional RC snubbers or gas discharge tubes.

Telecom Power Supply OVP Motor Drive Gate Driver Protection

Use Scenario: Overvoltage protection on secondary-side 24 V bias rails feeding PoE controllers and PHYs.

IC Role / Device Role / Timing Role: Standoff-clamp TVS parallel to bulk capacitor, triggered only during fault conditions.

Use Value: Maintains <1.0 µA leakage at 24 V, avoiding unnecessary quiescent current drain while providing sub-40 V clamping.

Use Scenario: Shielding high-side N-channel MOSFET gate drivers from Miller-induced voltage spikes during fast switching.

IC Role / Device Role / Timing Role: Clamping diode from gate to source, limiting dV/dt-induced overshoot during turn-off.

Use Value: Responds in <1 ns to suppress >100 V spikes, preserving gate oxide integrity and preventing false turn-on.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ24AHM3_B/I Halogen-free variant with identical electrical specs and AEC-Q101 qualification; same SMB package and pinout. No difference in circuit function or layout - selected only where halogen-free compliance is mandated (e.g., EU medical devices). Choose SMBJ24AHM3_B/I when RoHS + halogen-free certification is required; otherwise SMBJ24AHE3_B/I suffices.
SMCJ24AHE3_A/H Higher-power 1500 W version in larger SMC (DO-214AB) package; VWM = 24 V, VC = 39.4 V at 38.9 A. Used where higher surge repetition rate or longer duration transients (e.g., ISO 16750-2) demand greater energy handling. Select SMCJ24AHE3_A/H only if test profiles exceed 600 W single-pulse limits; requires PCB footprint change.

Compared with SMBJ24AHM3_B/I, SMBJ24AHE3_B/I offers identical protection performance with standard RoHS compliance; versus SMCJ24AHE3_A/H, it trades lower surge capacity for compact SMB footprint and tighter board space utilization.

Availability

SMBJ24AHE3_B/I is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input protection, and telecom power rail conditioning requiring stable component supply and full AEC-Q101 traceability.

Supply support for SMBJ24AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.

The SMBJ series was engineered specifically for robust, surface-mount transient suppression in harsh environments - emphasizing AEC-Q101 qualification, low clamping ratio, and MSL Level 1 reflow compatibility.

FAQ

What is the maximum clamping voltage of SMBJ24AHE3_B/I under a 10/1000 µs surge?

The SMBJ24AHE3_B/I has a maximum clamping voltage (VC) of 38.9 V at 15.4 A peak pulse current with a 10/1000 µs waveform. This value is measured per JEDEC standards and guarantees the protected circuit will not experience more than 38.9 V during such transients - critical for safeguarding 3.3 V or 5 V logic interfaces connected to 24 V rails. The SMBJ24AHE3_B/I maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C).

Is SMBJ24AHE3_B/I suitable for automotive applications?

Yes, SMBJ24AHE3_B/I is AEC-Q101 qualified and explicitly rated for automotive use. Its construction includes glass-passivated junctions, MSL Level 1 reflow compatibility (260 °C peak), and validated performance across -55 °C to +150 °C junction temperature. It meets key automotive surge standards including ISO 7637-2 Pulse 1 (inductive switch-off) and Pulse 5a (load dump), making it appropriate for BCMs, ADAS sensors, and infotainment power supplies. The "HE3" suffix confirms its AEC-Q101 status.

How does SMBJ24AHE3_B/I differ from bidirectional variants like SMBJ24CA?

SMBJ24AHE3_B/I is unidirectional, with polarity marked by a cathode band and intended for DC line protection (e.g., 24 V supply to ground). In contrast, SMBJ24CA is bidirectional - symmetrical in both directions, no polarity marking, and used for AC or differential signal lines like RS-485 or CAN bus. Their VWM and VC values differ: SMBJ24CA has VWM = 24 V but clamps at ±38.9 V, whereas SMBJ24AHE3_B/I clamps only in reverse bias. Using SMBJ24AHE3_B/I on AC lines would cause forward conduction and failure.

What is the thermal resistance from junction to lead (RθJL) for SMBJ24AHE3_B/I?

The SMBJ24AHE3_B/I has a typical junction-to-lead thermal resistance (RθJL) of 20 °C/W, measured per JEDEC JESD51-14. This low value enables efficient heat transfer from the silicon die to the PCB copper via the leads, supporting repetitive surge handling and sustained power dissipation. When mounted on 0.2" × 0.2" copper pads, its RθJA is 100 °C/W - allowing continuous 5.0 W power dissipation at 50 °C ambient. This thermal profile is essential for designs requiring multiple surge events without thermal runaway.

Does SMBJ24AHE3_B/I require a heatsink for standard operation?

No, SMBJ24AHE3_B/I does not require an external heatsink for standard transient suppression duty. Its 5.0 W steady-state power dissipation rating and 100 °C/W junction-to-ambient thermal resistance are specified for mounting on minimum recommended 0.2" × 0.2" copper pads - sufficient for most automotive and industrial applications. Heatsinking becomes relevant only in rare cases involving high-frequency repetitive surges (>1 Hz) or ambient temperatures exceeding 85 °C, where junction temperature must stay below 150 °C. For typical 10/1000 µs single-event protection, PCB copper acts as the primary thermal path.

SMBJ24AHE3_B/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
24V
Voltage - Breakdown (Min):
26.7V
Voltage - Clamping (Max) @ Ipp:
38.9V
Current - Peak Pulse (10/1000µs):
15.4A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

SMBJ24AHE3_B/I FAQ

1.How can I place an order for SMBJ24AHE3_B/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ24AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ24AHE3_B/I reliable?

The price and inventory of SMBJ24AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ24AHE3_B/I is usually 5 days.

3.What payment methods are accepted for SMBJ24AHE3_B/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ24AHE3_B/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ24AHE3_B/I?

SMBJ24AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ24AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ24AHE3_B/I?

For technical support, including SMBJ24AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ24AHE3_B/I requirements.

6.How does Aetrix verify that SMBJ24AHE3_B/I is sourced from the original manufacturer or authorized distributors?

All SMBJ24AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ24AHE3_B/I meets industry standards.

7.What is the process for return or replacement of SMBJ24AHE3_B/I?

All SMBJ24AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ24AHE3_B/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ24AHE3_B/I part is unused and in its original packaging.

Return procedure for SMBJ24AHE3_B/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ24AHE3_B/I Tags

  • SMBJ24AHE3_B/I
  • SMBJ24AHE3_B/I PDF
  • SMBJ24AHE3_B/I Datasheet
  • SMBJ24AHE3_B/I Specifications
  • SMBJ24AHE3_B/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ24AHE3_B/I
  • Buy SMBJ24AHE3_B/I
  • SMBJ24AHE3_B/I Price
  • SMBJ24AHE3_B/I Distributor
  • SMBJ24AHE3_B/I Supplier
  • SMBJ24AHE3_B/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER